MD0100
Single/Dual-Channel High-Voltage Protection T/R Switch
Features
General Description
•
•
•
•
•
The MD0100 is a high-voltage, two-terminal,
bi-directional, current-limiting protection device. The
two terminals are interchangeable. It is designed to
protect a low-noise receiver from high-voltage transmit
pulses in ultrasound applications and is commonly
referred to as a transmit-and-receive (T/R) switch.
Up to ±100V Input Voltage Protection
Low On-Resistance, 15Ω Typical
Fast-Switching Speed
Effective Simple Two-Terminal Device
No External Supplies Needed
The MD0100 can be considered as a normally closed
switch with a typical switch resistance of 15Ω that
allows small signals to pass. When the voltage drop
across the two terminals exceeds a nominal value of
±2V, the device turns off. In the OFF state, the MD0100
can withstand up to ±100V across its terminals. A small
amount of current (typically 200 µA) is allowed to flow
through.
Applications
•
•
•
•
•
Medical Ultrasound Imaging
Non-Destructive Testing Applications
Fast Resettable Fuses
High-Side Switches
Data Acquisition
The applications for the MD0100 are not limited to just
ultrasound. It can also be used as resettable fuses to
protect power lines, output short-circuit protection and
data acquisition. The MD0100 is available in an
SOT-89 package as a single-channel device, as well as
in a 4 mm x 4 mm 8-lead DFN package as a
dual-channel device.
Package Types
3-lead SOT-89
(Top view)
8-lead DFN
(Top view)
COM
A1
1
B1
2
A2
3
B2
A
COM
4
COM1
COM2
8
COM1
7
COM1
6
COM2
5
COM2
B
See Table 2-1 and Table 2-2 for pin information.
2018 Microchip Technology Inc.
DS20005738A-page 1
MD0100
Functional Block Diagram
COM
Switch Control
A
DS20005738A-page 2
B
2018 Microchip Technology Inc.
MD0100
Typical Application Circuit
+90V
Piezo
Transducers
Transmitter
-90V
Logic
Control
and
Signal
Processing
TX
RX
Receiver
2018 Microchip Technology Inc.
B
MD0100
T/R Switch
A
High Voltage
Switches
DS20005738A-page 3
MD0100
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Differential Voltage, VA-B .............................................................................................................................. 0V to +110V
Maximum Junction Temperature, TJ .................................................................................................................... +125°C
Storage Temperature, TS...................................................................................................................... –65°C to +150°C
Power Dissipation:
3-lead SOT-89 (Note 1, Note 2) .................................................................................................................. 1.6W
8-lead DFN (Note 1, Note 2) ..................................................................................................................... 1.67W
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm
2: The maximum power dissipation is per die. A package has two dies.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TJ = 25°C unless otherwise specified.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Maximum Differential Input Voltage
from A to B
VA-B
±100
—
—
V
IA–B = ±500 µA
Switch-On Resistance from A to B
RSW
—
15
—
Ω
IA–B = ±5 mA
VA-B Trip Point to Turn Off
VTRIP
—
±1
±2
V
Switch Turn-Off Voltage
VOFF
—
±2
—
V
IA–B = ±1 mA
IA-B(OFF)
—
±200
±300
µA
VA–B = ±100V
Switch-Off Current
Conditions
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TJ = 25°C unless otherwise specified.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Peak Switching Current
IPEAK
—
±60
—
mA
See Figure 3-8.
Turn-Off Time
TOFF
—
—
20
ns
See Figure 3-2, Figure 3-3
and Figure 3-4.
Turn-On Time
TON
—
—
20
ns
See Figure 3-5, Figure 3-6
and Figure 3-7.
Switch-On Capacitance from A to B
CSW(ON)
—
21
—
pF
SW = ON
Switch-Off Capacitance from A to B
CSW(OFF)
—
15
—
pF
VSW = 25V
BW
—
100
—
Sym.
Min.
Typ.
Max.
Unit
Operating Junction Temperature
TJ
–40
—
+125
°C
Storage Temperature
TS
–65
—
+150
°C
3-lead SOT-89
θJA
—
133
—
°C/W
8-lead DFN
JA
—
44
—
°C/W
Small Signal Bandwidth
Conditions
MHz RLOAD = 50Ω
TEMPERATURE SPECIFICATIONS
Parameter
Conditions
TEMPERATURE RANGE
PACKAGE THERMAL RESISTANCE
Note 1:
Note 1
4-inch-x-4.5-inch JEDEC 2s2p PCB
DS20005738A-page 4
2018 Microchip Technology Inc.
MD0100
Typical I-V Characteristics
+IPEAK
IA-B
IA-B = +200μA
-100V
-VOFF
+1.0mA
-VTRIP
+VTRIP
+1.0mA
+VOFF
VA-B
+100V
IA-B = -200μA
RSW = 15Ω
-IPEAK
2018 Microchip Technology Inc.
DS20005738A-page 5
MD0100
2.0
PIN DESCRIPTION
The functional descriptions for the pins of MD0100 are
listed in Table 2-1 and Table 2-2. See Package Types
for the location of pins.
TABLE 2-1:
3-LEAD SOT-89 PIN FUNCTION TABLE
Pin Number
Pin Name
1
A
2
COM
3
B
TABLE 2-2:
Description
Switch Terminal A
Do not connect.
Switch Terminal B
8-LEAD DFN PIN FUNCTION TABLE
Pin Number
Pin Name
1
A1
Switch Terminal A1
2
B1
Switch Terminal B1
3
A2
Switch Terminal A2
4
B2
Switch Terminal B2
5, 6, and
Heat Slug 2
COM2
Do not connect.
7, 8, and
Heat Slug 1
COM1
Do not connect.
DS20005738A-page 6
Description
2018 Microchip Technology Inc.
MD0100
DETAILED DESCRIPTION
The MD0100 can be considered as a normally closed
switch controlled by a built-in control circuit. (See
Functional Block Diagram.) The switch control circuit
monitors the voltage drop between Terminal A and
Terminal B. If the voltage difference is greater than ±2V,
the T/R switch will be opened. Once in the Open state,
there is a small amount of current flowing through the
T/R switch (200 uA) to detect if high voltage is still
present. The T/R switch will not close until the voltage
between Terminal A and Terminal B drops within ±2V.
A pair of back-to-back diodes, from Terminal B (if it is
connected to the receiver side) to ground is needed to
complete the circuit and allow the peak current (about
60 mA) to flow through the switch. If the diodes are not
present, there is no current path and the voltage drop
across Terminal A and B will be less than ±2V. As a
result, the switch will remain in the ON position.
The other purpose of the diodes is to clamp voltage
spikes to ±0.7V during transmitting and receiving
periods. Low-voltage diodes with low reverse recovery
time and low junction capacitances (like BAV99T)
should be used.
20
19
18
17
CSW (pF)
3.0
16
15
14
13
12
11
10
0
10
20
30
40
50
60
70
80
90
VSW (V)
FIGURE 3-1:
3.3
CSW(OFF) vs. VSW.
TON and TOFF Time
The TON and TOFF of the MD0100 are less than 20 ns,
which provides a quick transition between the Transmit
and Receive modes. TON and TOFF times are
proportional to the rise and fall times of the transmit
pulses. The TOFF and TON setups are shown in
Figure 3-2 and Figure 3-5, respectively.
500ns
3.1
On Resistance
When the voltage between Terminal A and Terminal B
is within ±2V, the switch is ON and the RON is typically
15Ω. Once the voltage between Terminal A and
Terminal B is greater than ±2V, the switch will be OFF
and prevent high-voltage pulses from passing through
to the receiver and damaging it.
The MD0100 does not require any power supply. There
are only two active pins: the first connects to the
transmitter side and the second connects to the
receiver side.
3.2
+10V
0V
Tx
Transmitter
VB
Switch Capacitance
The typical switch-on capacitance CSW(ON) is 21 pF.
This is measured from A to B or B to A when the switch
is turned on.
The switch-off capacitance is a function of the voltage
across the T/R switch. The CSW(OFF) is about 12 pF to
19 pF for 10V to 100V of transmit voltage. Refer to
Figure 3-1 for the C–V curve of CSW(OFF).
2018 Microchip Technology Inc.
MD0100
VA
10Ω
FIGURE 3-2:
Test Setup for TOFF.
DS20005738A-page 7
MD0100
+10V
VA +10V
VA
+2V
+2V
0V
VB
2V
10%
VB
1V
0V
FIGURE 3-3:
TOFF Timing Diagram.
FIGURE 3-6:
TON Timing Diagram.
2V
2V
1V
10%
FIGURE 3-4:
TOFF at VA = 10V.
Figure 3-4 shows the actual waveform and
measurement of TOFF. TOFF is measured from 2V of VA
to 10% of VB. From the above waveform, TOFF is 11 ns.
FIGURE 3-7:
Figure 3-7 illustrates the actual waveform and
measurement of TON. TON is measured from 2V of VA
to 1V of VB. From the above waveform, TON is 6.6 ns.
500ns
+10V
TON at VA = 10V.
IPEAK
0 - 5V
B
tr = 10ms
MD0100
A
V
0V
Tx
Transmitter
FIGURE 3-8:
Test Setup for IPEAK.
2V
15Ω
VB
MD0100
FIGURE 3-5:
DS20005738A-page 8
VA
Test Setup for TON.
2018 Microchip Technology Inc.
MD0100
100ns
+90V
Transmitter
-90V
Tx
CH1
VB
CH2
MD0100
VA
1KΩ
FIGURE 3-9:
Test Setup for Waveforms in
Figure 3-10 and Figure 3-11.
FIGURE 3-11:
Typical Waveform B.
Figure 3-10 shows the waveforms of VA and VB for the
test circuit in Figure 3-9. There is a small bump of about
0.5V at the tail of the VB signal because the transmit
signal falls into the ±2V range, and the MD0100 turns
back on again. Figure 3-11 illustrates the same
waveforms with both VA and VB shown with same
voltage scale of 2V/div.
FIGURE 3-10:
Typical Waveform A.
2018 Microchip Technology Inc.
DS20005738A-page 9
MD0100
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
3-lead SOT-89
XXXYWW
NNN
e3
Note:
DS20005738A-page 10
M10821
421
8-lead DFN
Example
XXXXXXX
XXXXXXX
e3 YYWW
NNN
MD0100
K6
e3 1819
483
Legend: XX...X
Y
YY
WW
NNN
*
Example
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters
for product code or customer-specific information. Package may or not include
the corporate logo.
2018 Microchip Technology Inc.
MD0100
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
1
2
E1
3
L
b
b1
A
e
e1
Side View
Top View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
Dimensions
(mm)
A
b
b1
C
D
D1
E
E1
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
e
1.50
BSC
e1
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
2018 Microchip Technology Inc.
DS20005738A-page 11
MD0100
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20005738A-page 12
2018 Microchip Technology Inc.
MD0100
APPENDIX A:
REVISION HISTORY
Revision A (October 2018)
• Converted Supertex Doc# DSFP-MD0100 to
Microchip DS20005738A
• Changed the power dissipation value of 8-lead
DFN from “1.1W” to “1.67W”
• Changed Note 1 to “4-inch-x-4.5-inch JEDEC
2s2p PCB”
• Changed the package marking format
• Changed the quantity of the 8-lead DFN K6
package from 3000/Reel to 3300/Reel
• Changed the “3-lead TO-243AA (SOT-89)” package marking to “3-lead SOT-89”
• Made minor text changes throughout the document
2018 Microchip Technology Inc.
DS20005738A-page 13
MD0100
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
Package
Options
Device
Devices:
Packages:
Environmental:
Media Type:
-
X
-
Environmental
X
Media Type
MD0100
=
Single-Channel High-Voltage Protection
T/R Switch, Single Channel
MD0100D
=
Dual-Channel High-Voltage Protection
T/R Switch
N8
=
3-lead SOT89 (for single channel only)
K6
=
8-lead (4x4) VDFN (for dual channel only)
G
=
Lead (Pb)-free/RoHS-compliant Package
(blank)
=
2000/Reel for an N8 Package
(blank)
=
3300/Reel for a K6 Package
DS20005738A-page 14
Examples:
a) MD0100N8-G:
Single-Channel High-Voltage Protection T/R Switch, 3-lead SOT89,
2000/Reel
b) MD0100DK6G:
Dual-Channel High-Voltage Protection T/R Switch, 8-lead (4x4)
VDFN, 3300/Reel
2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
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are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
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SQTP is a service mark of Microchip Technology Incorporated in
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CERTIFIED BY DNV
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
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All other trademarks mentioned herein are property of their
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© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3685-0
== ISO/TS 16949 ==
2018 Microchip Technology Inc.
DS20005738A-page 15
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DS20005738A-page 16
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2018 Microchip Technology Inc.
08/15/18
