MD1213K6-G

MD1213 High-Speed Dual-MOSFET Driver Features General Description • • • • • • • • • • The MD1213 is a high-speed dual-MOSFET driver. It is designed to drive high-voltage P-channel and N-channel MOSFETs for medical ultrasound and other applications requiring a high-output current for a capacitive load. The high-speed input stage of the MD1213 can operate from 1.8V to 5V logic interface with an optimum operating input signal range of 1.8V to 3.3V. An adaptive threshold circuit is used to set the level translator switch threshold to the average of the input logic 0 and logic 1 levels. The input logic levels may be ground referenced even though the driver is putting out bipolar signals. The level translator uses a proprietary circuit, which provides DC coupling together with high-speed operation. 6 ns Rise and Fall Time with 1000 pF Load 2A Peak Output Source and Sink Currents 1.8V to 5V Input CMOS Compatible 4.5V to 13V Total Supply Voltage Smart Logic Threshold Low-Jitter Design Two Matched Channels Outputs can Swing Below Ground Low-Inductance Package Thermally Enhanced Package Applications • • • • • • The output stage of the MD1213 has separate power connections enabling the output signal L and H levels to be chosen independently from the supply voltages used for the majority of the circuit. As an example, the input logic levels may be 0V and 1.8V, the control logic may be powered by +5V to –5V, and the output L and H levels may be varied anywhere over the range of –5V to +5V. The output stage is capable of peak currents of up to ±2A, depending on the supply voltages used and load capacitance present. Medical Ultrasound Imaging Piezoelectric Transducer Drivers Non-Destructive Testing PIN Diode Driver CCD Clock Driver/Buffer High-Speed Level Translator The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Second, when OE is low, the outputs are disabled with the A output high and the B output low. This assists in properly pre-charging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair. Package Type 12-lead QFN (Top view) 12 1 See Table 2-1 for pin information.  2017 Microchip Technology Inc. DS20005713B-page 1 MD1213 Functional Block Diagram VDD1 OE Level Shifter INA Level Shifter VDD2 VH OUTA VSS2 VL VH VDD2 INB OUTB Level Shifter SUB GND DS20005713B-page 2 VSS1 VSS2 VL  2017 Microchip Technology Inc. MD1213 Typical Application Circuit +5.0V VDD1 OE Level Shifter INA Level Shifter VDD2 VH 0.47µF MD1213 +100V OUTA 1.0µF 10nF 3.3V CMOS Logic Inputs VSS2 To Piezoelectric Transducer VL VH VDD2 10nF INB Level Shifter OUTB -100V TC6320 1.0µF -5.0V GND  2017 Microchip Technology Inc. VSS1 VSS2 VL 0.47µF DS20005713B-page 3 MD1213 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Level Translator Supply Voltage, VDD–VSS ...........................................................................................–0.5V to +13.5V Output High Supply Voltage, VH ................................................................................................. VL–0.5V to VDD + 0.5V Output Low Supply Voltage, VL ................................................................................................... VSS–0.5V to VH+ 0.5V Low-Side Supply Voltage, VSS ................................................................................................................. –7V to + 0.5V Logic Input Pins .......................................................................................................................... VSS–0.5V to GND +7V Maximum Junction Temperature, TJ .................................................................................................................. +125°C Operating Ambient Temperature, TA ..................................................................................................... –40°C to +85°C Storage Temperature, TS ......................................................................................................................–65°C to +150°C ESD Rating (Note 1) ............................................................................................................................... ESD Sensitive † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Note 1: Device is ESD sensitive. Handling precautions are recommended. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Over operating conditions unless otherwise specified, VH = VDD1 = VDD2 = 12V, VL = VSS1 = VSS2 = 0V, VOE = 3.3V, TA = 25°C. Parameter Sym. Min. Typ. Max. Unit VDD–VSS 4.5 — 13 V Level Translator Negative Supply Voltage VSS –5.5 — 0 V Output High Supply Voltage VH VSS +2 — VDD V Output Low Supply Voltage VDD –2 V Level Translator Supply Voltage VL VSS — VDD1 Quiescent Current IDD1Q — 0.55 — mA VDD2 Quiescent Current IDD2Q — — 10 µA Conditions 2.5V ≤ VDD ≤ 13V No input transitions VH Quiescent Current IHQ — — 10 µA VDD1 Average Current IDD1 — 0.88 — mA VDD2 Average Current IDD2 — 6.6 — mA VH Average Current IH — 23 — mA Input Logic Voltage High VIH VOE–0.3 — 5 V Input logic Voltage Low VIL 0 — 0.3 V Input Logic Current High IIH — — 1 µA Input Logic Current Low IIL — — 1 µA OE Input Logic Voltage High VIH 1.8 — 5 V OE Input Logic Voltage Low VIL 0 — 0.3 V OE Input Logic Impedance to GND RIN 12 20 30 KΩ Logic Input Capacitance CIN — 5 10 pF All inputs Output Sink Resistance RSINK — — 12.5 Ω ISINK = 50 mA Output Source Resistance RSOURCE — — 12.5 Ω ISOURCE = 50 mA Peak Output Sink Current ISINK — 2 — A ISOURCE — 2 — A Peak Output Source Current DS20005713B-page 4 One channel on at 5 MHz, no load For logic inputs INA and INB For logic input OE  2017 Microchip Technology Inc. MD1213 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: VH = VDD1 = VDD2 = 12V, VL = VSS1 = VSS2 = 0V, VOE = 3.3V, TA = 25°C. Parameter Sym. Min. Typ. Max. Unit tirf — — 10 ns Propagation Delay when Output is from Low to High tPLH — 7 — ns Propagation Delay when Output is from High to Low tPHL — 7 — ns Propagation Delay OE to Outputs tPOE — 9 — ns Output Rise Time tr — 6 — ns Output Fall Time tf — 6 — ns Rise and Fall Time Matching l tr–tf l — 1 — ns Propagation Low to High and High-to-low Matching l tPLH–tPHL l — 1 — ns ∆tdm — ±2 — ns Sym. Min. Typ. Max. Unit TJ — — +125 °C Operating Ambient Temperature TA –40 — +85 °C Storage Temperature TS –65 — +150 °C 12-lead QFN JA — 47 — °C/W Thermal Resistance to Case θJC — 7 — °C/W Inputs or OE Rise and Fall Time Propagation Delay Match Conditions Logic input edge speed requirement CLOAD = 1000 pF, input signal rise/fall time of 2 ns (See Timing Diagram and Figure 3-1.) CLOAD = 1000 pF, input signal rise/fall time of 2 ns (See Timing Diagram.) For each channel Device-to-device delay match TEMPERATURE SPECIFICATIONS Parameter Conditions TEMPERATURE RANGE Maximum Junction Temperature PACKAGE THERMAL RESISTANCE Note 1: Note 1 On an 1 oz. 4-layer 3” x 4” PCB with thermal pad and thermal via array  2017 Microchip Technology Inc. DS20005713B-page 5 MD1213 Timing Diagram 3.3V IN 50% 50% 0V tPLH tPHL 90% 90% OUT 10% 0V TABLE 1-1: 10% tr tf TRUTH FUNCTION TABLE Logic Input OE INA H H H H L DS20005713B-page 6 Output INB OUTA OUTB L L VH VH L H VH VL H L VL VH H H VL VL X X VH VL  2017 Microchip Technology Inc. MD1213 2.0 PIN DESCRIPTION The details on the pins of MD1213 are listed on Table 2-1. See Package Type for the location of pins. TABLE 2-1: PIN FUNCTION TABLE Pin Number Pin Name 1 INA Logic input. Controls OUTA when OE is high. Input logic high will cause the output to swing to VL. Input logic low will cause the output to swing to VH. (See Figure 3-2.) 2 VL Supply voltage for N-channel output stage 3 INB Logic input. Controls OUTB when OE is high. Input logic high will cause the output to swing to VL. Input logic low will cause the output to swing to VH. (See Figure 3-2.) 4 GND Logic input ground reference 5 VSS1 Low-side analog circuit and level translator supply voltage. VSS1 must be at the lowest potential of the chip. Thermal Pad and Pin 5 must be connected externally. 6 VSS2 Low-side gate drive supply voltage. VSS2 should be at the same potential as VSS1. 7 OUTB Output driver. Swings from VH to VL. Intended to drive the gate of an external N-channel MOSFET via a series capacitor. When OE is low, the output is disabled. OUTB will swing to VL, turning off the external N-channel MOSFET. 8 VH 9 OUTA Output driver. Swings from VH to VL. Intended to drive the gate of an external P-channel MOSFET via a series capacitor. When OE is low, the output is disabled. OUTA will swing to VH, turning off the external P-channel MOSFET. 10 VDD2 High-side gate drive supply voltage 11 VDD1 High-side analog circuit and level shifter supply voltage. Should be at the same potential as VDD2. 12 OE Thermal Pad Description Supply voltage for P-channel output stage Output-enable logic input. When OE is high, (VOE + VGND)/2 sets the threshold transition between logic level high and low for INA and INB. When OE is low, OUTA is at VH and OUTB is at VL regardless of INA and INB. Index Pad and Thermal Pad are connected internally.  2017 Microchip Technology Inc. DS20005713B-page 7 MD1213 APPLICATION INFORMATION For proper operation of the MD1213, low-inductance bypass capacitors should be used on the various supply pins. The GND input pin should be connected to the digital ground. The INA, INB and OE pins should be connected to their logic source with a swing of GND to logic level 1.8V to 5V. Good PCB layout trace practices should be followed corresponding to the desired operating speed. The internal circuitry of the MD1213 is capable of operating up to 100 MHz, with the primary speed limitation being the loading effect of the load capacitance. Because of this speed and the high transient currents due to the capacitive loads, the bypass capacitors should be as close to the chip pins as possible. Unless the load specifically requires bipolar drive, the VSS1, VSS2, and VL pins should have low-inductance feed-through connections to a ground plane. The power connections VDD1 and VDD2 should have a ceramic bypass capacitor to the ground plane with short leads and decoupling components to prevent resonance in the power leads. A common capacitor and voltage source may be used for these two pins, which should always have the same applied DC voltage. For applications sensitive to jitter and noise, separate decoupling networks may be used for VDD1 and VDD2. Propagation Delay vs. Logic Voltage Propagation Delay (ns) 10 2.0 VOE/2 1.5 1.0 0.6V 0.5 0 0 1.0 2.0 3.0 4.0 5.0 VOE (volts) FIGURE 3-2: Logic Input Threshold. Pay particular attention to minimizing trace lengths and using sufficient trace width to reduce inductance. Surface-mount components are highly recommended. Since the output impedance of this driver is very low, in some cases, it may be desirable to add a small series resistor in series with the output signal to obtain better waveform integrity at the load terminals. This will reduce the output voltage slew rate at the terminals of a capacitive load. Focus on parasitic coupling from the driver output to the input signal terminals. This feedback may cause oscillations or spurious waveform shapes on the edges of signal transitions. Since the input operates with signals down to 1.8V, even small coupled voltages may cause problems. Use of a solid ground plane and good power and signal layout practices will prevent this problem. Make sure that the circulating ground return current from a capacitive load will not react with common inductance and cause noise voltages in the input logic circuitry. 9.0 8.0 7.0 6.0 1.0 VTH vs. VOE 2.5 VTH (volts) 3.0 1.5 2.0 2.5 3.0 3.5 Logic Voltage (V) FIGURE 3-1: Propagation Delay. The supplied voltages of VH and VL determine the output logic levels. These two pins can draw fast transient currents of up to 2A, so they should be provided with a suitable bypass capacitor located next to the chip pins. A ceramic capacitor of up to 1 µF may be appropriate, with a series ferrite bead to prevent resonance in the power supply lead going to the capacitor. DS20005713B-page 8  2017 Microchip Technology Inc. MD1213 4.0 PACKAGING INFORMATION 4.1 Package Marking Information Legend: XX...X Y YY WW NNN e3 * Note: 12-lead QFN Example XXXXXX XXXXXX e3 YYWW NNN MD 1213K6 e3 1721 165 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2017 Microchip Technology Inc. DS20005713B-page 9 MD1213 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20005713B-page 10  2017 Microchip Technology Inc. MD1213 APPENDIX A: REVISION HISTORY Revision B (June 2017) The following is the list of modifications: • Updated the operating ambient temperature in Absolute Maximum Ratings† and in the Temperature Specifications table. • Made minor text changes throughout the document. Revision A (April 2017) • Converted Supertex Doc# DSFP-MD1213 to Microchip DS20005713B • Updated the package marking format • Changed the quantity of the 12-lead QFN K6 package from 3000/Reel to 5000/Reel • Made minor text changes throughout the document  2017 Microchip Technology Inc. DS20005713B-page 11 MD1213 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. XX PART NO. Device - Package Options X - Environmental X Media Type Device: MD1213 = High-Speed Dual-MOSFET Driver Package: K6 = 12-lead QFN Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 5000/Reel for a K6 Package DS20005713B-page 12 Example: a) MD1213K6-G: High-Speed Dual-MOSFET Driver 12-lead (4x4) QFN, 5000/Reel  2017 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2017, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-1803-0 == ISO/TS 16949 ==  2017 Microchip Technology Inc. DS20005713B-page 13 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 Finland - Espoo Tel: 358-9-4520-820 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Hong Kong Tel: 852-2943-5100 Fax: 852-2401-3431 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 Austin, TX Tel: 512-257-3370 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20005713B-page 14 China - Dongguan Tel: 86-769-8702-9880 China - Guangzhou Tel: 86-20-8755-8029 China - Hangzhou Tel: 86-571-8792-8115 Fax: 86-571-8792-8116 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-3326-8000 Fax: 86-21-3326-8021 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 India - Pune Tel: 91-20-3019-1500 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7830 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 France - Saint Cloud Tel: 33-1-30-60-70-00 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-67-3636 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Israel - Ra’anana Tel: 972-9-744-7705 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7289-7561 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820  2017 Microchip Technology Inc. 11/07/16