MIC2582/3
Single-Channel Hot Swap Controllers
Features
General Description
• MIC2582: Pin-for-Pin Functional Equivalent to the
LTC1422
• 2.3V to 13.2V Supply Voltage Operation
• Surge Voltage Protection up to 20V
• Current Regulation Limits Inrush Current
Regardless of Load Capacitance
• Programmable Inrush Current Limiting
• Electronic Circuit Breaker
• Optional Dual-Level Overcurrent Threshold
Detects Excessive Load Faults
• Fast Response to Short-Circuit Conditions ( 3V
VCC = 2.3V
Start Cycle, VGATE = 0V, VCC = 13.2V
VCC = 2.3V
VGATE > 1V
VCC = 13.2V,
Note 2
/FAULT = 0
VCC = 2.3V, Note 2
(MIC2583/3R only)
Turn Off
Specification for packaged product only.
Not a tested parameter. Ensured by design.
2021 Microchip Technology Inc.
DS20006573A-page 3
MIC2582/3
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VCC = 5.0V; TA = +25°C, bold values valid for –40°C ≤ TA ≤ +85°C, unless noted. Note 1
Parameter
Symbol
Min.
Typ.
Max.
Current-Limit/Overcurrent
Timer (CFILTER) Current
(MIC2583/83R)
ITIMER
Power-on-Reset Timer
Current
ICPOR
–8.5
–6.5
–4.5
4.5
6.5
8.5
–3.5
2.5
–1.5
µA
Timer on
0.5
1.3
—
mA
Timer off
1.19
1.245
1.30
V
2.1
2.2
2.3
1.90
2.05
2.20
—
150
—
1.19
1.24
1.29
1.14
1.19
1.24
VONHYS
—
50
—
mV
—
ΔVON
—
2
—
mV
2.3V ≤ VCC ≤ 13.2V
ON Pin Input Current
ION
—
—
–0.5
µA
VON = VCC
Start-Up Delay Timer
Threshold
VSTART
0.26
0.31
0.36
V
VCPOR rising
Auto-Restart Threshold
Voltage
(MIC2583R only)
VAUTO
0.19
1.24
1.30
0.26
0.31
0.36
Auto-Restart Current
(MIC2583R only)
IAUTO
10
13
16
—
1.4
2
1.19
1.24
1.29
1.15
1.20
1.25
POR Delay and
Overcurrent Timer
(CFILTER) Threshold
VTH
Undervoltage Lockout
Threshold
VUV
Undervoltage Lockout
Hysteresis
VUVHYS
ON Pin Threshold Voltage
ON Pin Hysteresis
ON Pin Threshold Line
Regulation
Power Good Threshold
Voltage
VON
VFB
Units
µA
V
mV
V
V
µA
V
Conditions
VCC − VSENSE > VTRIPSLOW (timer on)
VCC − VSENSE > VTRIPSLOW (timer off)
VCPOR rising
VCFILTER rising (MIC2583/83R only)
VCC rising
VCC falling
—
2.3V ≤ VCC ≤ 13.2V
ON rising
ON falling
Upper threshold
Lower threshold
Charge current
Discharge current
2.3V = VCC = 13.2V
FB rising
FB falling
FB Hysteresis
VFBHYS
—
40
—
mV
—
FB Pin Leakage Current
IFBLKG
—
—
1.5
µA
2.3V = VCC = 13.2V, VFB = 1.3V
/POR, /FAULT, PWRGD
Output Voltage
VOL
—
—
0.4
V
(/FAULT, PWRGD MIC2583/83R only),
IOUT = 1 mA
Output Discharge
Resistance
(MIC2583/83R only)
RDIS
—
500
1000
Ω
—
Fast Overcurrent SENSE
to GATE Low Trip Time
tOCFAST
—
1
—
µs
VCC = 5V, VCC − VSENSE = 100 mV
CGATE = 10 nF, Figure 1-1
Slow Overcurrent SENSE
to GATE Low Trip Time
tOCSLOW
—
5
—
µs
VCC = 5V, VCC − VSENSE = 50 mV
CFILTER = 0, Figure 1-1
ON Delay Filter
tONDLY
—
20
—
µs
—
FB Delay Filter
tFBDLY
—
20
—
µs
—
Note 1:
2:
Specification for packaged product only.
Not a tested parameter. Ensured by design.
DS20006573A-page 4
2021 Microchip Technology Inc.
MIC2582/3
TEMPERATURE SPECIFICATIONS
Parameters
Symbol
Min.
Typ.
Max.
Units
Conditions
TJ(MAX)
—
—
+125
°C
—
Ambient Temperature Range
TA
–40
—
+85
°C
—
Lead Temperature (IR Reflow, Peak
Temperature)
—
—
—
+260
°C
+0°C/–5°C
Thermal Resistance, SOIC 8-Lead
JA
—
163
—
°C/W
—
Thermal Resistance, QSOP 8-Lead
JA
—
112
—
°C/W
—
Temperature Ranges
Maximum Junction Temperature
Package Thermal Resistance
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
Timing Diagrams
1
V TRIPFAST
VUV
VCC
50mV
(V CC – V SENSE )
2
t>20ȝs
0
tOCFAST
tOCSLOW
VON
V GATE
1V
1V
1.24V
3
tSTART
VSTART
VCPOR
CFILTER
5
VON
0
4
tPOR
0
FIGURE 1-1:
VTH
VFB
Current Limit Response.
VFB
V/POR
1.2V
FB
0
tPOR
1.5V
/POR
0
1.5V
/PWRGD
VPWRGD
FIGURE 1-3:
Timing.
Note:
0
FIGURE 1-2:
Response.
MIC2583 Power-on-Reset
MIC2583 Only
Power-on-Start-Up Delay
Please refer to the Start-Up Cycle section,
for a detailed explanation of the timing
shown in this figure.
Test Circuit
RSENSE
0.025
IIN
1
+
3
100k
VIN
IRF7413
or equivalent
2
IOUT
+
4
CLOAD
CIN
VCC
GATE
ON
–
CGATE
DUT
–
VOUT
RLOAD
SENSE
R1
FB
12.4k
1%
FIGURE 1-4:
Applications Test Circuit (not
all pins shown for simplicity).
2021 Microchip Technology Inc.
DS20006573A-page 5
MIC2582/3
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
1.290
1.280
1.270
1.260
VCC = 13.2V
1.250
1.240
1.230
1.220
VCC = 2.3V
VCC = 5.0V
1.210
1.200
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-1:
Temperature.
Voltage Threshold (VTH) vs.
GATE CURRENT-OFF (μA)
VOLTAGE THRESHOLD (V)
1.300
1.270
1.260
VCC = 13.2V
1.250
1.240
1.230
1.220
VCC = 2.3V
V CC = 5.0V
1.210
1.200
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
GATE CURRENT-ON (μA)
ON PIN THRESHOLD (V)
VCC = 13.2V
110
100
90
VCC = 5.0V
VCC = 2.3V
80
70
60
50
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
IGATE(OFF) vs. Temperature.
-30
1.290
1.280
FIGURE 2-2:
ON Pin Threshold vs.
Temperature (Upper Threshold).
-25
-20
VCC = 13.2V
VCC = 5.0V
-15
-10
VCC = 2.3V
-5
0
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-5:
IGATE(ON) vs. Temperature.
1.300
1.230
VCC = 5.0V
1.220
VCC = 2.3V
1.210
VCC = 13.2V
1.190
1.180
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-3:
ON Pin Threshold vs.
Temperature (Lower Threshold).
DS20006573A-page 6
PWRGD THRESHOLD (V)
1.240
ON PIN THRESHOLD (V)
130
120
FIGURE 2-4:
1.300
1.200
150
140
1.275
VCC = 13.2V
1.250
1.225
1.200
VCC = 2.3V
VCC = 5.0V
1.175
1.150
1.125
1.100
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-6:
Power Good Threshold vs.
Temperature (Increasing).
2021 Microchip Technology Inc.
MIC2582/3
-8.0
1.260
1.240
1.220
1.200
VCC = 2.3V
1.180
1.160 VCC = 13.2V
VCC = 5.0V
1.140
1.120
-7.5
TIMER CURRENT (μA)
PWRGD THRESHOLD (V)
.
1.300
1.280
-6.5
-6.0
-5.5
0.300
VCC = 2.3V
0.250
VCC = 5.0V
0.200
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
AUTO-RESTART THRESHOLD (V)
FIGURE 2-8:
Auto-Restart Threshold
Voltage vs. Temperature (Lower) MIC2583R.
UVLO THRESHOLD (V)
VCC = 13.2V
0.350
2.30
2.20
1.90
1.80
UVLO+
UVLO–
1.70
1.60
1.50
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-11:
Temperature.
1.400
UVLO Threshold vs.
20
18
1.350
1.300
Current-Limit Timer Current
2.10
2.00
VCC = 13.2V
1.250
1.200 V = 2.3V
CC
VCC = 5.0V
1.150
GATE VOLTAGE (V)
AUTO-RESTART THRESHOLD (V)
2.50
2.40
0.400
VCC = 2.3V
FIGURE 2-10:
vs. Temperature.
0.500
0.450
VCC = 5.0V
-5.0
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
1.100
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-7:
Power Good Threshold vs.
Temperature (Decreasing).
VCC = 13.2V
-7.0
14
12
10
FIGURE 2-9:
Auto-Restart Threshold
Voltage vs. Temperature (Upper) MIC2583R.
2021 Microchip Technology Inc.
VCC = 5.0V
8
6
4
1.100
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
VCC = 12.0V
16
VCC = 2.3V
2
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-12:
Temperature.
Gate Voltage vs.
DS20006573A-page 7
MIC2582/3
20
18
54
53
VCC = 2.3V
52
51
50
49
48
VCC = 13.2V
8
6
45
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
0
VCC = 2.3V
VCC = 5.0V
0 2 4 6 8 10 12 14 16 18 20
VOLTAGE (V)
FIGURE 2-16:
Gate Current vs. Gate
Voltage @ –40°C.
18
120
VCC = 2.3V
110
100
16
14
90
VCC = 13.2V
80 VCC = 5.0V
70
60
50
VCC = 13.2V
12
10
VCC = 5.0V
8
6
4
40
30
2
0
20
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-14:
vs. Temperature.
Circuit Breaker Fast (VTRIP)
VCC = 2.3V
0 2 4 6 8 10 12 14 16 18 20
VOLTAGE (V)
FIGURE 2-17:
Gate Current vs. Gate
Voltage @ +25°C.
16
4.0
14
3.5
3.0
VCC = 2.3V
2.5
2.0
VCC = 13.2V
1.5
VCC = 5.0V
1.0
-40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
FIGURE 2-15:
Power-on-Reset Timer
Current vs. Temperature.
DS20006573A-page 8
CURRENT (μA)
POR TIMER CURRENT (μA)
12
10
4
2
Circuit Breaker Slow (VTRIP)
VCC = 13.2V
16
14
47
46
FIGURE 2-13:
vs. Temperature.
FAST THRESHOLD (mV)
CURRENT (μA)
VCC = 5.0V
CURRENT (μA)
SLOW THRESHOLD (mV)
55
12
VCC = 13.2V
10
8
VCC = 2.3V
6
4
2
0
VCC = 5.0V
0 2 4 6 8 10 12 14 16 18 20
VOLTAGE (V)
FIGURE 2-18:
Gate Current vs. Gate
Voltage @ +85°C.
2021 Microchip Technology Inc.
IIN
500mA/div
CIN = 4.7μF
CLOAD = 100μF
CGATE = 47nF
RLOAD = 12
R1 = 100k
TIME (10ms/div.)
Turn On, VOUT = 12V.
CIN = 4.7μF
CLOAD = 100μF
CGATE = 47nF
RLOAD = 5
R1 = 33k
FIGURE 2-22:
TIME (1ms/div.)
Turn Off, VOUT = 5V.
VOUT
2V/div
TIME (1ms/div.)
TIME (250μs/div.)
FIGURE 2-23:
= 5V.
FAULT
5V/div
VOUT
2V/div
PWRGD VOUT
5V/div 2V/div
IIN
500mA/div
CIN = 4.7μF
CLOAD = 100μF
CGATE = 47nF
RLOAD = 5
R1 = 33k
Turn On, VOUT = 5V.
2021 Microchip Technology Inc.
CIN = 0.1μF
CLOAD = 100μF
CGATE = 10nF
RLOAD = 5
R1 = 33k
TIME (2.5ms/div.)
TIME (5ms/div.)
FIGURE 2-21:
Turn On (CGATE = 0), VOUT
ON
5V/div
Turn Off, VOUT = 12V.
ON
2V/div
FIGURE 2-20:
CIN = 4.7μF
CGATE = 0
CLOAD = 10μF
RLOAD = 5
R1 = 33k
IOUT
500mA/div
CIN = 4.7μF
CLOAD = 100μF
CGATE = 47nF
RLOAD = 12
R1 = 100k
I IN
500mA/div
IIN
500mA/div
VOUT PWRGD
5V/div 5V/div
GATE
5V/div
ON
5V/div
ON
5V/div
FIGURE 2-19:
VOUT
IIN
500mA/div 2V/div
PWRGD
5V/div
PWRGD
2V/div
VOUT
5V/div
ON
5V/div
ON
2V/div
MIC2582/3
FIGURE 2-24:
VOUT = 5V.
Inrush Current Response,
DS20006573A-page 9
IIN
500mA/div
FAULT CFILTER ON
10V/div 1V/div 5V/div
MIC2582/3
1.85A
CIN = 4.7μF
CGATE = 0
CLOAD = 100μF
CFILTER = 100nF
RLOAD = 6
ILIM = 1.7A
R1 = 100k
TIME (20ms/div.)
Turn On into Heavy Load,
IIN
500mA/div
GATE
2V/div
CFILTER ON
1V/div 5V/div
FIGURE 2-25:
VOUT = 12V.
CGATE = CLOAD = 0
CFILTER = 100nF
CIN = 4.7μF
ILIM = 1.7A
R1 = 33k
TIME (2.5ms/div.)
Turn On into Short-Circuit,
GATE
5V/div
FAULT
5V/div
FIGURE 2-26:
VOUT = 5V.
IOUT
500mA/div
CGATE = 0
CIN = 4.7μF
CLOAD = 10μF
RLOAD = 5
ILIM = 3.3A
R1 = 33k
TIME (100μs/div.)
FIGURE 2-27:
Shutdown by Short-Circuit,
MIC2583 VOUT = 5V.
DS20006573A-page 10
2021 Microchip Technology Inc.
MIC2582/3
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin Number
SOIC-8
1
2
PIN FUNCTION TABLE
Pin Number
QSOP-16
1
3
Pin Name
Description
/POR
Power-on-Reset output: Open-drain N-channel device, active-low.
This pin remains asserted during start-up until a time period (tPOR)
after the FB pin voltage rises above the power good threshold
(VFB). The timing capacitor CPOR determines tPOR. When the output voltage monitored at the FB pin falls below VFB, /POR is
asserted for a minimum of one timing cycle (tPOR). The /POR pin
requires a pull-up resistor (10 kΩ minimum) to VCC.
ON
ON input: Active-high. The ON pin is an input to a Schmitt-triggered
comparator used to enable/disable the controller, is compared to a
1.24V reference with 50 mV of hysteresis. When a logic high is
applied to the ON pin (VON > 1.24V), a start-up sequence begins
and the GATE pin starts ramping up towards its final operating voltage. When the ON pin receives a logic low signal (VON < 1.19V),
the GATE pin is grounded and /FAULT remains high if VCC is above
the UVLO threshold. ON must be low for at least 20 µs after VCC is
above the UVLO threshold in order to initiate a start-up sequence.
Additionally, toggling the ON pin LOW to HIGH resets the circuit
breaker.
Power-on-Reset timer: A capacitor connected between this pin and
ground sets the supply contact start-up delay (tSTART) and the
power-on reset interval (tPOR). When VCC rises above the UVLO
threshold, and the ON pin is above the ON threshold, the capacitor
connected to CPOR begins to charge. When the voltage at CPOR
crosses 0.3V, the start-up threshold (VSTART), a start cycle is initiated if ON is asserted while capacitor CPOR is immediately discharged to ground. When the voltage at FB rises above VFB,
capacitor CPOR begins to charge again. When the voltage at
CPOR rises above the power-on reset delay threshold (VTH), the
timer resets by pulling CPOR to ground, and /POR is de-asserted.
If CPOR is left open, then tSTART defaults to 20 µs.
3
4
CPOR
4
7, 8
GND
5
6
12
14
2021 Microchip Technology Inc.
Ground connection: Tie to analog ground.
FB
Power Good Threshold input (Undervoltage detect): This input is
internally compared to a 1.24V reference with 30 mV of hysteresis.
An external resistive divider may be used to set the voltage at this
pin. If this input momentarily goes below 1.24V, then /POR is activated for one timing cycle, tPOR, indicating an output undervoltage
condition. The /POR signal de-asserts one timing cycle after the FB
pin exceeds the power good threshold by 30 mV. A 5 µs filter on
this pin prevents glitches from inadvertently activating this signal.
GATE
Gate Drive output: Connects to the gate of an external N-channel
MOSFET. An internal clamp ensures that no more than 9V is
applied between the GATE pin and the source of the external MOSFET. The GATE pin is immediately brought low when either the circuit breaker trips or an undervoltage lockout condition occurs.
DS20006573A-page 11
MIC2582/3
TABLE 3-1:
Pin Number
SOIC-8
PIN FUNCTION TABLE (CONTINUED)
Pin Number
QSOP-16
7
15
8
16
—
2
—
5
Pin Name
Description
SENSE
Circuit Breaker Sense input: A resistor between this pin and VCC
sets the current-limit threshold. Whenever the voltage across the
sense resistor exceeds the slow trip current-limit threshold (VTRIPSLOW), the GATE voltage is adjusted to ensure a constant load current. If VTRIPSLOW (50 mV) is exceeded for longer than time period
tOCSLOW, then the circuit breaker is tripped and the GATE pin is
immediately pulled low. If the voltage across the sense resistor
exceeds the fast trip circuit breaker threshold, VTRIPFAST, at any
point due to fast, high amplitude power supply faults, then the
GATE pin is immediately brought low without delay. To disable the
circuit breaker, the SENSE and VCC pins can be tied together. The
default VTRIPFAST for either device is 100 mV. Other fast trip thresholds are available: 150 mV, 200 mV, or OFF (VTRIPFAST disabled).
Please contact Microchip for availability of other options.
VCC
Positive Supply input: 2.3V to 13.2V. The GATE pin is held low by
an internal undervoltage lockout circuit until VCC exceeds a threshold of 2.2V. If VCC exceeds 13.2V, an internal shunt regulator protects the chip from transient voltages up to 20V at the VCC and
SENSE pins.
PWRGD
Power Good output: Open-drain N-channel device, active-high.
When the voltage at the FB pin is lower than 1.24V, PWRGD output
is held low. When the voltage at the FB pin exceeds 1.24V, then
PWRGD is asserted immediately. The PWRGD pin requires a
pull-up resistor (10 kΩ minimum) to VCC.
CFILTER
Current-Limit Response timer: A capacitor connected to this pin
defines the period of time (tOCSLOW) in which an overcurrent event
must last to signal a fault condition and trip the circuit breaker. If no
capacitor is connected, then tOCSLOW defaults to 5 µs.
Circuit Breaker Fault Status output: Open-drain N-channel device,
active-low. The /FAULT pin is asserted when the circuit breaker
trips due to an overcurrent condition or when an undervoltage lockout condition exists. The/FAULT pin requires a pull-up resistor
(10 kΩ minimum) to VCC.
—
11
/FAULT
—
13
DIS
Discharge output: When the MIC2583/3R is turned off, a 500Ω
internal resistor at this output allows the discharging of any load
capacitance to ground.
—
6, 9, 10
NC
No internal connection.
Note:
Please refer to the Start-Up Cycle section and Figure 1-3 for a detailed explanation of the start-up and operation sequence of the MIC2582 pins shown in Table 3-1.
DS20006573A-page 12
2021 Microchip Technology Inc.
MIC2582/3
4.0
FUNCTIONAL DESCRIPTION
4.1
Hot Swap Insertion
When circuit boards are inserted into live system
backplanes and supply voltages, high inrush currents
can result due to the charging of bulk capacitance that
resides across the supply pins of the circuit board. This
inrush current, although transient in nature, may be
high enough to cause permanent damage to on board
components or may cause the system’s supply
voltages to go out of regulation during the transient
period which may result in system failures. The
MIC2582 and MIC2583 act as a controller for external
N-channel MOSFET devices in which the gate drive is
controlled to provide inrush current-limiting and output
voltage slew rate control during hot plug insertions.
4.2
Power Supply
VCC is the supply input to the MIC2582/83 controller
with a voltage range of 2.3V to 13.2V. The VCC input
can withstand transient spikes up to 20V. In order to
ensure stability of the supply voltage, a minimum
0.47 µF capacitor from VCC to ground is
recommended. Alternatively, a low-pass filter, shown in
the Typical Application Circuit, can be used to eliminate
high frequency oscillations as well as help suppress
transient spikes.
Also, due to the existence of an undetermined amount
of parasitic inductance in the absence of bulk
capacitance along the supply path, placing a Zener
diode at the VCC side of the controller to ground in order
to provide external supply transient protection is
strongly recommended for relatively high current
applications (≥3A). See the Typical Application Circuit.
4.3
Start-Up Cycle
Referring to Figure 1-3: When the VCC input voltage is
first applied, it raises above the UVLO threshold
voltage (VUV, (1) in Figure 1-3). A minimum of 20 μs
later, ((2) in Figure 1-3), the voltage on the ON pin can
be taken above the ON pin threshold (VON). At that
time, the CPOR current source (ICPOR), is turned on,
and the voltage at the CPOR pin starts to rise. See
Table 4-2 for some typical supply start-up delays using
several standard value capacitors. When the CPOR
voltage reaches the start threshold voltage (VSTART, (3)
in Figure 1-3), two things happen:
1.
2.
The external power FET driver charge pump is
turned on, and the output voltage starts to rise.
The capacitor on the CPOR pin is discharged to
ground.
voltage (VFB), the current source into the CPOR pin is
again turned on, and the voltage at the CPOR pin starts
to rise. When the CPOR voltage reaches the threshold
voltage (VTH, (4) in Figure 1-3), the /POR pin goes high
impedance, and is allowed to be pulled up by the
external pull-up resistor on the /POR pin. This indicates
that the output power is good.
In the MIC2583, when the FB threshold voltage (VFB) is
reached, the Power Good (PWRGD) pin goes open
circuit, high impedance, and is allowed to be pulled up
by the external pull-up resistor on the PWRGD pin. The
non-delayed power good feature is only available on
the MIC2583.
Active current regulation is employed to limit the inrush
current transient response during start-up by regulating
the load current at the programmed current-limit value
(See the Current Limiting and Dual-Level Circuit
Breaking section). The following equation is used to
determine the nominal current-limit value:
EQUATION 4-1:
V TRIPSLOW
50mV I LIM = ----------------------------= -----------------R SENSE
R SENSE
Where:
VTRIPSLOW = The current limit slow trip threshold
found in the Electrical Characteristics table.
RSENSE = The selected value that will set the desired
current limit.
There are two basic start-up modes for the
MIC2582/83: Start-up dominated by load capacitance
or Start-up dominated by total gate capacitance. The
magnitude of the inrush current delivered to the load
will determine the dominant mode. If the inrush current
is greater than the programmed current limit (ILIM), then
load capacitance is dominant. Otherwise, gate
capacitance is dominant. The expected inrush current
is calculated using the following equation:
EQUATION 4-2:
C LOAD
C LOAD
Inrush I GATE ------------------ = 17A -----------------C GATE
C GATE
Where:
IGATE = The GATE pin pull-up current.
CLOAD = The load capacitance.
CGATE = The total GATE capacitance (CISS of the
external MOSFET and any external capacitor
connected from the MIC2582/83 GATE pin to
ground.)
The voltage on the feedback (FB) pin tracks the VOUT,
output voltage through the feedback divider resistors
(R1 and R2 in Figure 1-4). When the output voltage
rises, and the FB voltage reaches the FB threshold
2021 Microchip Technology Inc.
DS20006573A-page 13
MIC2582/3
4.3.1
LOAD CAPACITANCE-DOMINATED
START-UP
In this case, the load capacitance (CLOAD) is large
enough to cause the inrush current to exceed the
programmed current limit, but is less than the fast-trip
threshold (or the fast-trip threshold is disabled, ‘M’
option). During start-up under this condition, the load
current is regulated at the programmed current-limit
value (ILIM) and held constant until the output voltage
rises to its final value. The output slew rate and
equivalent GATE voltage slew rate is computed by the
following equation:
EQUATION 4-5:
I GATE
dV OUT dt = ---------------C GATE
Table 4-1 depicts the output slew rate for various
values of CGATE.
TABLE 4-1:
IGATE = 17 µA
EQUATION 4-3:
CGATE
Output voltage slew rate:
I LIM
dV OUT dt = ----------------C LOAD
Where:
ILIM = The programmed current-limit value.
Consequently, the value of CFILTER must be selected to
ensure that the overcurrent response time, tOCSLOW,
exceeds the time needed for the output to reach its final
value. For example, given a MOSFET with an input
capacitance CISS = CGATE = 4700 pF, CLOAD is
2200 µF, and ILIM is set to 6A with a 12V input, then the
load capacitance dominates as determined by the
calculated Inrush > ILIM. Therefore, the output voltage
slew rate determined from Equation 4-3 is:
EQUATION 4-4:
6A - = 2.73V/ms
dV OUT dt = ------------------2200F
The resulting tOCSLOW needed to achieve a 12V output
is approximately 4.5 ms. (See the Power-on-Reset and
Overcurrent Timer Delays section to calculate
tOCSLOW).
4.3.2
GATE CAPACITANCE-DOMINATED
START-UP
In this case, the value of the load capacitance relative
to the GATE capacitance is small enough such that the
load current during start-up never exceeds the
current-limit threshold as determined by Equation 4-1.
The minimum value of CGATE that will ensure that the
current limit is never exceeded is given by the following
equation:
DS20006573A-page 14
OUTPUT SLEW RATE
SELECTION FOR GATE
CAPACITANCE-DOMINATED
START-UP
4.4
dVOUT/dt
0.001 µF
17V/ms
0.01 µF
1.7V/ms
0.1 µF
0.17V/ms
1 µF
0.017V/ms
Current Limiting and Dual-Level
Circuit Breaking
Many applications will require that the inrush and
steady-state supply current be limited at a specific
value in order to protect critical components within the
system. Connecting a sense resistor between the VCC
and SENSE pins sets the nominal current limit value of
the MIC2582/83 and the current limit is calculated
using Equation 4-1.
The MIC2582/83 also features a dual-level circuit
breaker triggered via the 50 mV and 100 mV
current-limit thresholds which are sensed across the
VCC and SENSE pins. The first level of the circuit
breaker functions as follows. For the MIC2583/3R,
once the voltage sensed across these two pins
exceeds 50 mV, the overcurrent timer, its duration set
by capacitor CFILTER, starts to ramp the voltage at
CFILTER using a 6.5 µA constant current source. If the
voltage at CFILTER reaches the overcurrent timer
threshold (VTH) of 1.24V, then CFILTER immediately
returns to ground as the circuit breaker trips and the
GATE output is immediately shut down. The default
overcurrent time period for the MIC2582/83 is 5 µs. For
the second level, if the voltage sensed across VCC and
SENSE exceeds 100 mV at any time, the circuit
breaker trips and the GATE shuts down immediately,
bypassing the overcurrent time period. The
MIC2582-MYM option is equipped with only a single
circuit breaker threshold (50 mV). To disable
current-limit and circuit breaker operation, tie the
SENSE and VCC pins together and the CFILTER
(MIC2583/3R) pin to ground.
2021 Microchip Technology Inc.
MIC2582/3
4.5
Output Undervoltage Detection
The MIC2582/83 employ output undervoltage
detection by monitoring the output voltage through a
resistive divider connected at the FB pin. During
turn-on, while the voltage at the FB pin is below the
threshold (VFB), the /POR pin is asserted low.
Once the FB pin voltage crosses VFB, a 2.5 µA current
source charges capacitor CPOR. Once the CPOR pin
voltage reaches 1.24V, the time period tPOR elapses as
the CPOR pin is pulled to ground and the /POR pin
goes HIGH. If the voltage at FB drops below VFB for
more than 10 µs, the /POR pin resets for at least one
timing cycle defined by tPOR (See Application
Information for an example).
4.6
Power-on-Reset and Overcurrent
Timer Delays
V TH
t OCSLOW = C FILTER ------------------ 0.19 C FILTER F
I
TIMER
Where:
VTH = The CFILTER timer threshold: 1.24V.
ITIMER = The overcurrent timer current: 6.5 µA.
TABLE 4-2:
SELECTED
POWER-ON-RESET AND
START-UP DELAYS
CPOR
tSTART
tPOR
0.01 µF
1.2 ms
5 ms
0.02 µF
2.4 ms
10 ms
The Power-on-Reset delay, tPOR, is the time period for
the /POR pin to go HIGH once the voltage at the FB pin
exceeds the Power Good threshold (VFB). A capacitor
connected to CPOR sets the interval and is determined
by using Equation 4-6:
0.033 µF
4 ms
16.5 ms
0.05 µF
6 ms
25 ms
0.1 µF
12 ms
50 ms
EQUATION 4-6:
0.33 µF
40 ms
165 ms
V TH
t POR = C POR ---------------- 0.5 C POR F
I CPOR
Where:
VTH = The power-on-reset threshold, typ. 1.24V.
ICPOR = The timer current, typ. 2.5 µA.
For the MIC2583/3R, a capacitor connected to CFILTER
is used to set the timer which activates the circuit
breaker during overcurrent conditions. When the
voltage across the sense resistor exceeds the slow trip
current-limit threshold of 50 mV, the overcurrent timer
begins to charge for a time period (tOCSLOW),
determined by CFILTER. When no capacitor is
connected to CFILTER and for the MIC2582, tOCSLOW
defaults to 5 µs. If tOCSLOW elapses, then the circuit
breaker is activated and the GATE output is
immediately pulled to ground. For the MIC2583/3R, the
following equation is used to determine the overcurrent
timer period, tOCSLOW.
0.47 µF
56 ms
235 ms
1 µF
120 ms
500 ms
TABLE 4-3:
SELECTED OVERCURRENT
TIMER DELAYS
CFILTER
tOCSLOW
680 pF
130 µs
2200 pF
420 µs
4700 pF
900 µs
8200 pF
1.5 ms
0.033 µF
6 ms
0.1 µF
19 ms
0.22 µF
42 ms
0.47 µF
90 ms
EQUATION 4-7:
Table 4-2 and Table 4-3 provide a quick reference for
several timer calculations using select standard value
capacitors.
2021 Microchip Technology Inc.
DS20006573A-page 15
MIC2582/3
5.0
APPLICATION INFORMATION
5.1
Design Consideration for Output
Undervoltage Detection
EQUATION 5-3:
V OUT GOOD
R5 = R6 ---------------------------------- – 1
V FB MAX
Where:
VFB(MAX) = 1.29V
VOUT(GOOD) = 11V
R6 = 12.4 kΩ
For output undervoltage detection, the first
consideration is to establish the output voltage level
that indicates “power is good.” For this example, the
output value for which a 12V supply will signal “good” is
11V. Next, consider the tolerances of the input supply
and FB threshold (VFB). For this example, the 12V
supply varies ±5%, thus the resulting output voltage
may be as low as 11.4V and as high as 12.6V.
Additionally, the FB threshold has ±50 mV tolerance
and may be as low as 1.19V and as high as 1.29V.
Thus, to determine the values of the resistive divider
network (R5 and R6) at the FB pin, shown in the Typical
Application Circuit, use the following iterative design
procedure.
Substituting these values into Equation 5-3 now yields
R5 = 93.33 kΩ. A standard 93.1 kΩ ±1% is selected.
Now, consider the 11.4V minimum output voltage, the
lower tolerance for R6 and higher tolerance for R5,
12.28 kΩ and 94.03 kΩ, respectively. With only 11.4V
available, the voltage sensed at the FB pin exceeds
VFB(MAX), thus the /POR and PWRGD (MIC2583/3R)
signals will transition from LOW to HIGH, indicating
“power is good” given the worse case tolerances of this
example. Lastly, in giving consideration to the leakage
current associated with the FB input, it is
recommended to either provide ample design margin
(20 mV to 30 mV) to allow for loss in the potential (∆V)
at the FB pin, or allow >100 µA to flow in the FB resistor
network.
• Choose R6 to allow 100 µA or more in the FB
resistive divider branch.
EQUATION 5-1:
V FB MAX
1.29V- = 12.9k
- = ---------------R6 = -----------------------100A
100A
5.2
R6 is chosen as 12.4 kΩ ±1%.
There are several configuration options for the
MIC2582/83’s ON pin to detect if the PCB has been
fully seated in the backplane before initiating a start-up
cycle. In the Typical Application Circuit, the
MIC2582/83 is mounted on the PCB with a resistive
divider network connected to the ON pin. R2 is
connected to a short pin on the PCB edge connector.
Until the connectors mate, the ON pin is held low, which
keeps the GATE output charge pump off. Once the
connectors mate, the resistor network is pulled up to
the input supply, 12V in this example, and the ON pin
• Next, determine R5 using the output “good”
voltage of 11V and the following equation.
EQUATION 5-2:
R5 + R6
V OUT GOOD = V FB -------------------R6
Using some basic algebra and simplifying Equation 5-2
to isolate R5 yields:
Backplane PCB Edge
Connector Connector
VIN
5V
PCB Connection Sense
RSENSE
0.010
5% 2
Long
Pin
Q1
Si7860DP
(PowerPAK SOIC-8)
1
3
C1
1μF
VOUT
5V@3A
4
CLOAD
220μF
**R8
10
R5
20k
16
R4
20k
VCC
3
R1
33k
R3
100
/ON_OFF
GATE
Medium or
Short Pin
GND
Long
Pin
14
C2
0.01μF
R2
*Q2 33k
PCB Connection Sense
DIS
FB
11
/FAULT
DS20006573A-page 16
SENSE
ON
MIC2583
Short
Pin
FIGURE 5-1:
15
13
12
VIN
R9
20N
/FAULT
CPOR
4
C3
0.05μF
GND
/POR
R6
27.4k
1%
R7
10.5k
1%
1
Downstream
Signal
7,8
Undervoltage (Output) = 4.45V
/POR Delay = 25ms
START-UP Delay = 6ms
*Q2 is TN0201T (SOT-23)
**R8 is optional for noise filtering
Additional pins omitted for clarity.
PCB Connection Sense with ON/OFF Control.
2021 Microchip Technology Inc.
MIC2582/3
5.4
voltage exceeds its threshold (VON) of 1.24V and the
MIC2582/83 initiates a start-up cycle. In Figure 5-1, the
connection sense consisting of a discrete logic-level
MOSFET and a few resistors allows for interrupt control
from the processor or other signal controller to shut off
the output of the MIC2582/83. R4 pulls the GATE of Q2
to VIN and the ON pin is held low until the connectors
are fully mated.
The MIC2582/83 can be configured to switch a primary
supply while generating a secondary regulated voltage
rail. The circuit in Figure 5-3 enables the MIC2582 to
switch a 5V supply while also providing a 3.3V low
dropout regulated supply with only a few added
external components. Upon enabling the MIC2582, the
GATE output voltage increases and thus the 3.3V
supply also begins to ramp. As the 3.3V output supply
crosses 3.3V, the FB pin threshold is also exceeded
which triggers the power-on reset comparator. The
/POR pin goes HIGH, turning on transistor Q3, which
lowers the voltage on the gate of MOSFET Q2. The
result is a regulated 3.3V supply with the gate feedback
loop of Q2 compensated by capacitor C3 and resistors
R4 and R5. For MOSFET Q2, special consideration
must be given to the power dissipation capability of the
selected MOSFET as 1.5V to 2V will drop across the
device during normal operation in this application.
Therefore, the device is susceptible to overheating
dependent upon the current requirements for the
regulated output. In this example, the power dissipated
by Q2 is approximately 1W. However, a substantial
amount of power will be generated with higher current
requirements and/or conditions. As a general guideline,
expect the ambient temperature within the power
supply box to exceed the maximum operating ambient
temperature of the system environment by
approximately 20°C. Given the MOSFET’s Rθ(JA) and
the expected power dissipated by the MOSFET, an
approximation for the junction temperature at which the
device will operate is obtained as follows:
Once the connectors fully mate, a logic LOW at the
/ON_OFF signal turns Q2 off and allows the ON pin to
pull up above its threshold and initiate a start-up cycle.
Applying a logic HIGH at the /ON_OFF signal will turn
Q2 on and short the ON pin of the MIC2582/83 to
ground which turns off the GATE output charge pump.
5.3
Higher UVLO Setting
Once a PCB is inserted into a backplane (power
supply), the internal UVLO circuit of the MIC2582/83
holds the GATE output charge pump off until VCC
exceeds 2.2V. If VCC falls below 2.1V, the UVLO circuit
pulls the GATE output to ground and clears the
overvoltage and/or current limit faults. A typical 12V
application, for example, should implement a higher
UVLO than the internal 2.1V threshold of MIC2582 to
avoid delivering power to downstream modules/loads
while the input is below tolerance. For a higher UVLO
threshold, the circuit in Figure 5-2 can be used to delay
the output MOSFET from switching on until the desired
input voltage is achieved. The circuit allows the charge
pump to remain off until VIN exceeds (1 + R1/R2) x
1.24V. The GATE drive output will be shut down when
VIN falls below (1 + R1/R2) x 1.19V. In the example
circuit (Figure 5-2), the rising UVLO threshold is set at
approximately 9.5V and the falling UVLO threshold is
established as 9.1V. The circuit consists of an external
resistor divider at the ON pin that keeps the GATE
output charge pump off until the voltage at the ON pin
exceeds its threshold (VON) and after the start-up timer
elapses.
EQUATION 5-4:
T J = P D R JA + T A
Where:
TA = TA(MAXOP) + 20°C.
Q1
IRF7822
(SOIC-8)
R SENSE
0.010 Ω
5% 2
V IN
12V
1
D1
(18V)
3
C1
1μF
R1
332k Ω
1%
V OUT
12V@4A
4
8
VCC
C LOAD
220 μF
R3
10Ω
7
SENSE
GATE
2
5V Switch with 3.3V Supply
Generation
R4
133k Ω
1%
6
C2
0.01 μF
ON
MIC2582
R2
49.9k Ω
1%
FB
GND
4
5
R5
16.2k Ω
1%
Undervoltage Lockout Threshold (rising) = 9.5V
Undervoltage Lockout Threshold (falling) = 9.1V
Undervoltage (Output) = 11.4V
Additional pins omitted for clarity.
FIGURE 5-2:
Higher UVLO Setting.
2021 Microchip Technology Inc.
DS20006573A-page 17
MIC2582/3
As a precaution, the implementation of additional
copper heat sinking is highly recommended for the
area under/around the MOSFET. For additional
information on MOSFET thermal considerations,
please see the MOSFET Selection section and its
subsequent sections.
5.5
40.8mV
42mV
R SENSE MAX = --------------------------------------------------- = ---------------------------------I LOAD CONT
1.03 I LOAD CONT
Auto-Restart for MIC2583R
The MIC2583R provides an auto-restart function. Upon
an overcurrent fault condition, such as a short circuit,
the MIC2583R initially shuts off the GATE output. The
MIC2583R attempts to restart with a 12 µA charge
current at a preset 10% duty cycle until the fault
condition is removed. The interval between auto-retry
attempts is set by capacitor CFILTER.
Once the value of RSENSE has been chosen in this
manner, it is good practice to check the maximum
ILOAD(CONT) which the circuit may let through in the
case of tolerance buildup in the opposite direction.
Here, the worst-case maximum current is found using
a 59 mV trip voltage and a sense resistor that is 3% low
in value. The resulting equation is:
5.6
EQUATION 5-6:
Sense Resistor Selection
The MIC2582 and MIC2583 use a low-value sense
resistor to measure the current flowing through the
MOSFET switch (and therefore the load). This sense
resistor is nominally set at 50 mV/ILOAD(CONT). To
accommodate worst-case tolerances for both the
sense resistor (allow ±3% over time and temperature
for a resistor with ±1% initial tolerance) and still supply
the maximum required steady-state load current, a
slightly more detailed calculation must be used.
I LOAD CONTMAX =
60.8mV
59mV
--------------------------------------------------- = ---------------------------------R SENSE NOM
0.97 R SENSE NOM
As an example, if an output must carry a continuous 2A
without nuisance trips occurring, Equation 5-5 yields:
EQUATION 5-7:
The current-limit threshold voltage (i.e., the “trip point”)
for the MIC2582/83 may be as low as 42 mV, which
would equate to a sense resistor value of
42 mV/ILOAD(CONT). Carrying the numbers through for
the case where the value of the sense resistor is 3%
high yields:
40.8mV
R SENSE MAX = ------------------- = 20.4m
2A
The next lowest standard value is 20 mΩ. At the other
set of tolerance extremes for the output in question,
EQUATION 5-5:
Q2
Si4876DY
(SO-8)
Backplane PCB Edge
Connector Connector
VIN
5V
1
2
3
RSENSE
C1
0.47μF 0.010
2%
D1
(9V)
VCC
2
C5
330μF
SENSE
GATE
6
ON
R4
1.2M
C2
0.022μF
C3
4700pF
R5
510k
VIN
MIC2582
3
R3
10
R2
10
7
R10
20k
Open
Circuit
Short
Pin
VOUT
3.3V@0.5A
VOUT
5V@3.5A
4
8
R1
47k
C6
100μF
Q1
Si4876DY
(SO-8)
Long
Pin
/POR
CPOR
FB
R8
20k
1
R9
750
Q3
PN2222
R6
20k
1%
C4
0.1μF
5
GND
R7
11.8k
1%
4
GND
Long
Pin
FIGURE 5-3:
5.7
Undervoltage (Output) = 3.3V
All resistors 5% unless specified otherwise
5V Switch/3.3V LDO Application.
MOSFET Selection
Selecting the proper external MOSFET for use with the
MIC2582/83 involves three straightforward tasks.
• The choice of a MOSFET that meets minimum
DS20006573A-page 18
voltage requirements.
• The selection of a device to handle the maximum
continuous current (steady-state thermal issues).
• Verification of the selected part’s ability to
withstand any peak currents (transient thermal
2021 Microchip Technology Inc.
MIC2582/3
At the same time, if the output of the external MOSFET
(its source) is suddenly subjected to a short, the
gate-source voltage will go to (19.5V – 0V) = 19.5V.
This means that the external MOSFET must be chosen
to have a gate-source breakdown voltage of 20V or
more, which is an available standard maximum value.
However, if operation is at or above 13V, the 20V
gate-source maximum will likely be exceeded. As a
result, an external Zener diode clamp should be used
to prevent breakdown of the external MOSFET when
operating at voltages above 8V. A Zener diode with 10V
rating is recommended as shown in Figure 5-4. At the
present time, most power MOSFETs with a 20V
gate-source voltage rating have a 30V drain-source
breakdown rating or higher.
issues).
5.8
MOSFET Voltage Requirements
The first voltage requirement for the MOSFET is easily
stated: the drain-source breakdown voltage of the
MOSFET must be greater than VIN(MAX). For instance,
a 12V input may reasonably be expected to see
high-frequency transients as high as 18V. Therefore,
the drain-source breakdown voltage of the MOSFET
must be at least 19V. For ample safety margin and
standard availability, the closest value will be 20V.
The second breakdown voltage criterion that must be
met is a bit subtler than simple drain-source breakdown
voltage, but is not hard to meet. In MIC2582/83
applications, the gate of the external MOSFET is driven
up to approximately 19.5V by the internal output
MOSFET (again, assuming 12V operation).
As a general tip, choose surface-mount devices with a
drain-source rating of 30V as a starting point.
Finally, the external gate drive of the MIC2582/83
requires a low-voltage logic level MOSFET when
operating at voltages lower than 3V. There are 2.5V
logic level MOSFETs available. Please see Table 5-1
for suggested manufacturers.
Q1
IRF7822
(SOIC-8)
RSENSE
0.006
5% 2
VIN
12V
1
D1
(18V)
3
*D2
1N5240B
10V
4
CLOAD
220μF
C1
1μF
R1
33k
8
VCC
R3
10
7
SENSE
GATE
2
VOUT
12V@6A
6
R4
100k
1%
C2
0.01μF
ON
MIC2582
FB
5
VIN
R2
33k
R6
47k
CPOR
GND
3
4
/POR
R5
13.3k
1%
1
DOWNSTREAM
SIGNAL
C3
0.05μF
Undervoltage (Output) = 11.0V
/POR Delay = 25ms
START-UP Delay = 6ms
*Recommended for MOSFETs with gate-source
breakdown of 20V or less for catastrophic output
short circuit protection. (IRF7822 VGS(MAX) = 12V)
FIGURE 5-4:
Zener-Clamped MOSFET Gate.
2021 Microchip Technology Inc.
DS20006573A-page 19
MIC2582/3
5.9
MOSFET Steady-State Thermal
Issues
The selection of a MOSFET to meet the maximum
continuous current is a fairly straightforward exercise.
First, the designer needs the following data:
• The value of ILOAD(CONTMAX) for the output in
question (see the Sense Resistor Selection
section).
• The manufacturer’s data sheet for the candidate
MOSFET.
• The maximum ambient temperature in which the
device will be required to operate.
• Any knowledge one can get about the heat
sinking available to the device (e.g., can heat be
dissipated into the ground plane or power plane, if
using a surface-mount part? Is any airflow
available?).
The data sheet will almost always give a value of on
resistance given for the MOSFET at a gate-source
voltage of 4.5V, and another value at a gate-source
voltage of 10V. As a first approximation, add the two
values together and divide by two to get the
on-resistance of the part with 8V of enhancement.
Call this value RON. Because a heavily enhanced
MOSFET acts as an ohmic (resistive) device, almost all
that’s required to determine steady-state power
dissipation is to calculate I2R.
The one addendum to this is that MOSFETs have a
slight increase in RON with increasing die temperature.
A good approximation for this value is 0.5% increase in
RON per °C rise in junction temperature above the point
at which RON was initially specified by the
manufacturer. For instance, if the selected MOSFET
has a calculated RON of 10 mΩ at a TJ = 25°C, and the
actual junction temperature ends up at 110°C, a good
first cut at the operating value for RON would be:
EQUATION 5-9:
MOSFET drain.
• Airflow works. Even a few LFM (linear feet per
minute) of air will cool a MOSFET down
substantially. If you can, position the MOSFET(s)
near the inlet of a power supply’s fan, or the outlet
of a processor’s cooling fan.
• The best test of a surface-mount MOSFET for an
application (assuming the above tips show it to be
a likely fit) is an empirical one. Check the
MOSFETs temperature in the actual layout of the
expected final circuit, at full operating current. The
use of a thermocouple on the drain leads, or
infrared pyrometer on the package, will then give
a reasonable idea of the device’s junction
temperature.
5.10
MOSFET Transient Thermal Issues
Having chosen a MOSFET that will withstand the
imposed voltage stresses, and the worst-case
continuous I2R power dissipation that it will see, it only
remains to verify the MOSFETs ability to handle
short-term overload power dissipation without
overheating. A MOSFET can handle a much higher
pulsed power without damage than its continuous
dissipation ratings would imply. The reason for this is
that, like everything else, thermal devices (silicon die,
lead frames, etc.) have thermal inertia.
In terms related directly to the specification and use of
power MOSFETs, this is known as “transient thermal
impedance,” or Zθ(JA). Almost all power MOSFET data
sheets give a Transient Thermal Impedance Curve. For
example, take the following case: VIN = 12V, tOCSLOW
has been set to 100 ms, ILOAD(CONTMAX) is 2.5A, the
slow-trip threshold is 50 mV nominal, and the fast-trip
threshold is 100 mV. If the output is accidentally
connected to a 3Ω load, the output current from the
MOSFET will be regulated to 2.5A for 100 ms
(tOCSLOW) before the part trips. During that time, the
dissipation in the MOSFET is given by:
EQUATION 5-10:
R ON 10m 1 + 110 – 25 0.005 14.3m
P = EI
E MOSFET = 12V – 2.5A 3 = 4.5V
The final step is to make sure that the heat sinking
available to the MOSFET is capable of dissipating at
least as much power (rated in °C/W) as that with which
the MOSFETs performance was specified by the
manufacturer. Here are a few practical tips:
• The heat from a surface-mount device, such as a
SOIC-8 MOSFET, flows almost entirely out of the
drain leads. If the drain leads can be soldered
down to one square inch or more, the copper will
act as the heat sink for the part. This copper must
be on the same layer of the board as the
DS20006573A-page 20
P MOSFET = 4.5V 2.5A = 11.25W for 100ms
At first glance, it would appear that a really hefty
MOSFET is required to withstand this sort of fault
condition. This is where the transient thermal
impedance curves become very useful. Figure 5-5
shows the curve for the Vishay (Siliconix) Si4410DY, a
commonly used SOIC-8 power MOSFET.
2021 Microchip Technology Inc.
MIC2582/3
Taking the simplest case first, we’ll assume that once a
fault event such as the one in question occurs, it will be
a long time—ten minutes or more—before the fault is
isolated and the channel is reset. In such a case, we
can approximate this as a “single pulse” event, that is
to say, there’s no significant duty cycle. Then, reading
up from the X-axis at the point where “Square Wave
Pulse Duration” is equal to 0.1 sec (100 ms), we see
that the Zθ(JA) of this MOSFET to a highly infrequent
event of this duration is only 8% of its continuous
Rθ(JA).
This particular part is specified as having an Rθ(JA) of
50°C/W for intervals of 10 seconds or less.
EQUATION 5-11:
T J T A MAX + T J
T J T A MAX + R ON + T A MAX – T A 0.005/C R ON
2
I R JA
T J 55C + 17m + 55C – 25C 0.005 17m
2
2.5A 50C/W
Thus:
Assume TA = 55°C maximum, 1 square inch of copper
at the drain leads, no airflow.
Recalling from our previous approximation hint, the
part has an RON of (0.0335/2) = 17 mΩ at 25°C.
Assume it has been carrying just about 2.5A for some
time.
When performing this calculation, be sure to use the
highest anticipated ambient temperature (TA(MAX)) in
which the MOSFET will be operating as the starting
temperature, and find the operating junction
temperature increase (∆TJ) from that point. Then, as
shown next, the final junction temperature is found by
adding TA(MAX) and ∆TJ. Because this is not a
closed-form equation, getting a close approximation
may take one or two iterations, and the calculation
tends to converge quickly.
T J 55C + 0.122W 50C/W 61.1C
Iterate the calculation once to see if this value is within
a few percent of the expected final value. For this
iteration we will start with TJ equal to the already
calculated value of 61.1°C:
EQUATION 5-12:
T J T A + 17m + 61.1C – 25C 0.005 17m
2
2.5A 50C/W
T J 55C + 0.125W 50C/W 61.27C
Then the starting (steady-state) TJ is:
So our original approximation of 61.1°C was very close
to the correct value. We will use TJ = 61°C.
Finally, add the temperature increase due to the
maximum power dissipation calculated from a “single
event”, (11.25W)(50°C/W)(0.08) = 45°C to the
steady-state TJ to get TJ(TRANSIENT MAX) = 106°C. This
is an acceptable maximum junction temperature for this
part.
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
N or ma liz e d E ffe c tive T ra ns ie nt
T he r ma l I mpe da nc e
Duty Cycle = 0.5
0.2
Notes:
0.1
P DM
0.1
0.05
t1
t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 50° C/W
0.02
3. TJM – T A = P DM Z thJA (t)
Single Pulse
4. Surface Mounted
0.01
10 –4
10 –3
10 –2
10 –1
1
10
30
Square Wave Pulse Duration (sec)
FIGURE 5-5:
Transient Thermal Impedance.
2021 Microchip Technology Inc.
DS20006573A-page 21
MIC2582/3
5.11
PCB Layout Considerations
2 oz.) is kept to a maximum of 10°C ~ 25°C. Also, these
traces should be as short as possible in order to
minimize the IR drops between the input and the load.
Because of the low values of the sense resistors used
with the MIC2582/83 controllers, special attention to
the layout must be used in order for the device’s circuit
breaker function to operate properly. Specifically, the
use of a 4-wire Kelvin connection to accurately
measure the voltage across RSENSE is highly
recommended. Kelvin sensing is simply a means of
making sure that any voltage drops in the power traces
connecting to the resistors does not get picked up by
the traces themselves. Additionally, these Kelvin
connections should be isolated from all other signal
traces to avoid introducing noise onto these sensitive
nodes. Figure 5-6 illustrates a recommended, single
layer layout for the RSENSE, power MOSFET, timer(s),
and feedback network connections. The feedback
network resistor values are selected for a 12V
application. Many hot swap applications will require
load currents of several amperes. Therefore, the power
(VCC and Return) trace widths (W) need to be wide
enough to allow the current to flow while the rise in
temperature for a given copper plate (e.g., 1 oz. or
Finally, the use of plated-through vias will be needed to
make circuit connections to power and ground planes
when utilizing multi-layer PC boards.
5.12
MOSFET and Sense Resistor
Vendors
Device types and manufacturer contact information for
power MOSFETs and sense resistors are provided in
Table 5-1. Some of the recommended MOSFETs
include a metal heat sink on the bottom side of the
package. The recommended trace for the MOSFET
Gate of Figure 5-6 must be redirected when using
MOSFETs packaged in this style. Contact the device
manufacturer for package information.
Current Flow
to the Load
Current Flow
to the Load
*POWER MOSFET
(SOIC-8)
*SENSE RESISTOR
(2512)
W
D
G
D
S
D
S
D
S
W
**R GATE
5
VC C
S E NS E
G AT E
FB
G ND
6
C P OR
7
ON
8
/P O R
MI C 2 5 8 2 -J B M
93.1kΩ
1%
1
2
3
4
Current Flow
from the Load
12.4kΩ
1%
**C GATE
**C POR
W
DRAWING IS NOT TO SCALE
*See Table 5-1 for part numbers and vendors.
**Optional components.
Trace width (W) guidelines given in "PCB Layout Recommendations" section of the datasheet.
FIGURE 5-6:
Network.
DS20006573A-page 22
Recommended PCB Layout for Sense Resistor, Power MOSFET, and Feedback
2021 Microchip Technology Inc.
MIC2582/3
TABLE 5-1:
MOSFET AND SENSE RESISTOR VENDORS
MOSFET Vendor
Key MOSFET Type(s)
Applications (Note 1)
Vishay (Siliconix)
Si4420DY (SOIC-8) package
Si4442DY (SOIC-8) package
Si4876DY (SOIC-8) package
Si7892DY (PowerPAK® SOIC-8)
IOUT ≤ 10A
IOUT = 10A to 15A, VCC < 3V
IOUT ≤ 5A, VCC ≤ 5V
IOUT ≤ 15A
International Rectifier
IRF7413 (SOIC-8) package
IRF7457 (SOIC-8) package
IRF7601 (SOIC-8) package
IOUT ≤ 10A
IOUT = 10A to 15A
IOUT ≤ 5A, VCC < 3V
Fairchild Semiconductor
FDS6680A (SOIC-8) package
IOUT ≤ 10A
Philips
PH3230 (SOT669-LFPAK)
IOUT ≥ 20A
Hitachi
HAT2099H (LFPAK)
IOUT ≥ 20A
Resistor Vendor
Sense Resistors
Vishay (Dale)
“WSL” Series
IRC
“OARS” Series
“LR” Series
(second source to “WSL”)
Note 1:
These devices are not limited to these conditions in many cases, but these conditions are provided as a
helpful reference for customer applications.
2021 Microchip Technology Inc.
DS20006573A-page 23
MIC2582/3
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
8-Lead SOIC*
XXXX
-XXX
WNNN
16-Lead QSOP*
XXXX
-XXXX
WNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Example
2582
-MYM
9711
Example
2583
-LYQS
9676
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (‾) symbol may not be to scale.
DS20006573A-page 24
2021 Microchip Technology Inc.
MIC2582/3
8-Lead SOIC Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
2021 Microchip Technology Inc.
DS20006573A-page 25
MIC2582/3
16-Lead QSOP Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
DS20006573A-page 26
2021 Microchip Technology Inc.
MIC2582/3
APPENDIX A:
REVISION HISTORY
Revision A (August 2021)
• Converted Micrel document MIC2582/3 to Microchip data sheet template DS20006573A.
• Minor grammatical corrections throughout.
2021 Microchip Technology Inc.
DS20006573A-page 27
MIC2582/3
NOTES:
DS20006573A-page 28
2021 Microchip Technology Inc.
MIC2582/3
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Device
-X
X
XX
-XX
Part No.
Fast Circuit
Breaker
Threshold
Temperature
Range
Package
Media Type
Device:
MIC2582: Single-Channel Hot Swap Controller
MIC2583: Single-Channel Hot Swap Controller with
Power Good Status Output
MIC2583R: Single-Channel Hot Swap Controller with
Power Good and Auto-Restart
Examples:
a) MIC2582-JYM:
MIC2582, 100 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 8-Lead
SOIC, 95/Tube
b) MIC2583-KYQS:
MIC2583, 150 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 16-Lead
QSOP, 98/Tube
c) MIC2583R-LYQS:
MIC2583R, 200 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 16-Lead
QSOP, 98/Tube
Fast Circuit Breaker
Threshold:
J
K
L
M
=
=
=
=
100 mV
150 mV (MIC2583 & MIC2583R Only)
200 mV (MIC2583 & MIC2583R Only)
Off
d) MIC2582-MYM-TR:
MIC2582, Fast Circuit Breaker
Threshold Off, –40°C to +85°C
Temp. Range, 8-Lead SOIC, 2500/
Reel
Temperature Range:
Y
=
–40°C to +85°C
e) MIC2583-JYQS-TR:
Package:
M
=
QS =
8-Lead SOIC
16-Lead QSOP
MIC2583, 100 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 16-Lead
QSOP, 2500/Reel
f) MIC2583R-KYQS-TR:
MIC2583R, 150 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 16-Lead
QSOP, 2500/Reel
g) MIC2583-LYQS:
MIC2583, 200 mV Fast Circuit
Breaker Threshold, –40°C to
+85°C Temp. Range, 16-Lead
QSOP, 98/Tube
h) MIC2583R-MYQS:
MIC2583R, Fast Circuit Breaker
Threshold Off, –40°C to +85°C
Temp. Range, 16-Lead QSOP, 98/
Tube
Media Type:
= 95/Tube (SOIC Option Only)
= 98/Tube (QSOP Option Only)
TR =
2500/Reel
Note 1:
2021 Microchip Technology Inc.
Tape and Reel identifier only appears in the catalog
part number description. This identifier is used for
ordering purposes and is not printed on the device
package. Check with your Microchip Sales Office for
package availability with the Tape and Reel option.
DS20006573A-page 29
MIC2582/3
NOTES:
DS20006573A-page 30
2021 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is secure when used in the intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods being used in attempts to breach the code protection features of the Microchip
devices. We believe that these methods require using the Microchip products in a manner outside the operating specifications
contained in Microchip's Data Sheets. Attempts to breach these code protection features, most likely, cannot be accomplished
without violating Microchip's intellectual property rights.
•
Microchip is willing to work with any customer who is concerned about the integrity of its code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is "unbreakable." Code protection is constantly evolving. We at Microchip are
committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection
feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or
other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication is provided for the sole
purpose of designing with and using Microchip products. Information regarding device applications and the like is provided
only for your convenience and may be superseded by updates.
It is your responsibility to ensure that your application meets
with your specifications.
THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS".
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
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RELATED TO THE INFORMATION INCLUDING BUT NOT
LIMITED TO ANY IMPLIED WARRANTIES OF NONINFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A
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ITS CONDITION, QUALITY, OR PERFORMANCE.
IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE OF ANY KIND
WHATSOEVER RELATED TO THE INFORMATION OR ITS
USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS
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The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
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© 2021, Microchip Technology Incorporated, All Rights Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2021 Microchip Technology Inc.
ISBN: 978-1-5224-8763-0
DS20006573A-page 31
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