MIC2800
Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual
300 mA/300 mA Low VIN LDOs
Features
General Description
• 2.7V to 5.5V Input Voltage Range
• 2 MHz DC/DC Converter and Two LDOs
• Integrated Power-on Reset (POR)
- Adjustable POR Delay Time
• LOWQ Mode
- 30 µA Total IQ when in LOWQ Mode
• DC/DC Converter
- Up to 600 mA of Output Current in PWM
Mode
- LOWQ Mode: NO RIPPLE Light Load Mode
- 75 µVRMS Output Noise in LOWQ Mode
- 2 MHz PWM Mode Operation
- > 90% Efficiency
• LDO1 Input Voltage Directly Connected to DC/DC
Converter Output Voltage for Maximum Efficiency
- Ideal for 1.8V to 1.5V Conversion
- 300 mA Output Current from 1.8V Input
- Output Voltage Down to 0.8V
• LDO2 – 300 mA Output Current Capable
• Thermal Shutdown Protection
• Current Limit Protection
• Simple, Leakage-Free Interfacing to Host MPU in
Applications with Backup Power
• Tiny 16-Pin 3mm x 3mm QFN Package
The MIC2800 is a high-performance power
management IC, featuring three output voltages with
maximum efficiency. Integrating a 2 MHz DC/DC
converter with an LDO post-regulator, the MIC2800
gives two high-efficiency outputs with a second,
300 mA LDO for maximum flexibility. The MIC2800
features a LOWQ mode, reducing the total current
draw while in this mode to less than 30 µA. In LOWQ
mode, the output noise of the DC/DC converter is
reduced to 75 µVRMS, significantly lower than other
converters that use a PFM light load mode that can
interfere with sensitive RF circuitry.
The DC/DC converter uses small values of L and C to
reduce board space but still retains efficiencies over
90% at load currents up to 600 mA.
The MIC2800 operates with very small ceramic output
capacitors and inductors for stability, reducing required
board space and component cost and it is available in
various output voltage options in the 16-pin
3mm x 3mm QFN leadless package.
Package Type
2017-2018 Microchip Technology Inc.
Pin 14
CBYP
CSET Pin 13
Pin 15
EN1
Pin 2
BIAS
LDO1 Pin 11
Pin 3
SGND
LDO
Pin 10
Pin 4
PGND
FB
Pin 9
LDO2
Pin 12
Pin 8
VIN
POR
Pin 7
LOWQ
VIN
Pin 1
Pin 6
Embedded MPU and MCU Power
Portable and Wearable Applications
Low-Power RF Systems
Backup Power Systems
Pin 5 SW
•
•
•
•
Pin 16
Applications
EN2
MIC2800
16-PIN 3mm X 3mm QFN
DS20005839B-page 1
MIC2800
Typical Application Circuit (simplified)
MIC2800-G1JS
VIN =
5V typ
VIN
SW
VIN
LDO
C1
4.7 µF
L1
2.2 µH
DDR2
VDDIO_DDR
2.2 µF
SGND
10 µF
SAMA5D2
MPU
PGND
EN2
Enable
LDO1
VDD_CORE
10 µF
CBIAS
100 nF
CBYP
100 nF
BIAS
LDO2
VDD_IO
10 µF
CBYP
RC
delay
EN1
CSET
10 nF
CSET
POR
nRST
/LOWQ
GPIO
Functional Diagram
DS20005839B-page 2
2017-2018 Microchip Technology Inc.
MIC2800
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VIN) ....................................................................................................................................–0.3 to +6.0V
Enable Input Voltage (VEN1, EN2) .....................................................................................................–0.3V to +(VIN+0.3V)
LOWQ, POR ............................................................................................................................................. –0.3V to +6.0V
Power Dissipation (Note 1) .................................................................................................................... Internally Limited
Lead Temperature (soldering, 10 sec.) ................................................................................................................. +260°C
Storage Temperature (TS) ...................................................................................................................... –65°C to +150°C
ESD Rating (Note 2) .................................................................................................................................................. 2 kV
Operating Ratings ‡
Supply Voltage (VIN) ................................................................................................................................. +2.7V to +5.5V
Enable Input Voltage (VEN1, EN2) ..................................................................................................................... 0V to +VIN
LOWQ, POR .................................................................................................................................................. 0V to +5.5V
Junction Temperature (TJ) ..................................................................................................................... –40°C to +125°C
Junction Thermal Resistance QFN-16 (θJA) .......................................................................................................+45°C/W
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
1: The maximum allowable power dissipation of any TA (ambient temperature) is PD(max) = (TJ(max) – TA) / θJA.
Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the
regulator will go into thermal shutdown.
2: Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5 kΩ in series with
100 pF.
2017-2018 Microchip Technology Inc.
DS20005839B-page 3
MIC2800
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (Note 1)
Electrical Characteristics: VIN = EN1 = EN2 = LOWQ = VOUT (Note 2) + 1V; COUTDC/DC = 2.2 µF, COUT1 = COUT2
= 2.2 µF; IOUTDC/DC = 100 mA;
IOUTLDO1 = IOUTLDO2 = 100 µA; TJ = 25°C, bold values indicate –40°C ≤ TJ ≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
UVLO Threshold
UVLOTH
2.45
2.55
2.65
V
UVLO Hysteresis
UVLOHYS
—
100
—
mV
800
1100
55
85
95
Ground Pin Current
Ground Pin Current in
Shutdown
Ground Pin Current
(LOWQ mode)
Overtemperature
Shutdown
Overtemperature
Shutdown Hysteresis
IGND
IGND_SHDN
—
—
Conditions
Rising input voltage during turn on
VFB = GND (not switching);
µA
LDO2 Only (EN1 = LOW)
0.2
5
µA
30
20
60
80
70
µA
µA
µA
IGND_LOWQ
—
TSD
—
160
—
°C
TSDHYS
—
23
—
°C
All EN = 0V
All channels ON, IDC/DC = ILDO1 =
ILDO2 = 0 mA
DC/DC and LDO1 OFF; ILDO2 =
0 mA
Enable Inputs (EN1; EN2; /LOWQ)
Enable Input Voltage
Logic Low
VIH
—
—
0.2
V
Enable Input Voltage
Logic High
VIL
1.0
—
—
V
Enable Input Current
IENLK
—
0.1
1
µA
VIL ≤ 0.2V
—
0.1
1
µA
VIH ≥1.0V
Turn-on Time
Turn-on Time
(LDO1 and LDO2)
tTURN-ON
—
240
120
500
350
µs
EN2 = VIN
EN1 = VIN
Turn-on Time (DC/DC)
tTURN-ON
—
83
350
µs
EN2 = VIN; ILOAD = 300 mA; CBYP =
0.1 µF
POR Threshold Voltage,
Failing
VTHLOW_POR
90
91
—
%
Low Threshold, % of nominal
(VDC/DC or VLDO1 or VLDO2) (Flag
ON)
POR Threshold Voltage,
Rising
VTHIGH_POR
—
96
99
%
High Threshold, % of nominal
(VDC/DC AND VLDO1 AND VLDO2)
(Flag OFF)
VOL
VOLPOR
—
10
100
mV
POR Output Logic Low Voltage; IL =
250 µA
IPOR
ILEAKPOR
—
0.01
1
µA
Flag Leakage Current, Flag OFF
ICSET
0.75
1.25
1.75
µA
VCSET = 0V
VTHCSET
—
1.25
—
V
POR = High
POR Output
CSET INPUT
CSET Pin Current
Source
CSET Pin Threshold
Voltage
Note 1:
2:
Specification for packaged product only.
VOUT denotes the highest of the three output voltage.
DS20005839B-page 4
2017-2018 Microchip Technology Inc.
MIC2800
TABLE 1-2:
ELECTRICAL CHARACTERISTICS - DC/DC CONVERTER
Electrical Characteristics: VIN = VOUTDC/DC + 1V; EN1 = VIN; EN2 = GND; IOUTDC/DC = 100 mA; L = 2.2 µH;
COUTDC/DC = 2.2 µF; TJ = 25°C, bold values indicate –40°C to + 125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
VOUT
–2
–3
—
+2
+3
%
Fixed Output Voltages
Current Limit in PWM
Mode
ILIM
0.75
1
1.6
A
VOUT = 0.9*VNOM
FB pin voltage (ADJ only)
VFB
—
800
—
mV
FB pin input current (ADJ
only)
IFB
—
1
5
nA
LOWQ = High (Full Power Mode)
Output Voltage Accuracy
VOUT > 2.4V; VIN = VOUT + 300 mV
to 5.5V, ILOAD= 100 mA
VOUT < 2.4V; VIN = 2.7V to 5.5V,
ILOAD= 100 mA
Output Voltage Line
Regulation
(∆VOUT/VOUT)
/∆VIN
—
0.2
—
%/V
Output Voltage Load
Regulation
∆VOUT/VOUT
—
0.2
1.5
%
20 mA < ILOAD < 300 mA
Maximum Duty Cycle
DCMAX
100
—
—
%
VFB ≤ 0.4V
—
Ω
High-Side Switch
ON-Resistance
0.6
—
Low-Side Switch
ON-Resistance
ISW = 150 mA VFB = 0.7VFB_NOM
0.8
ISW = -150 mA VFB = 1.1VFB_NOM
Oscillator Frequency
fosc
1.8
2
2.2
MHz
Output Voltage Noise
VN
—
60
—
µVRMS
COUT = 2.2 µF; CBYP = 0.1 µF;
10 Hz to 100 KHz
LOWQ = Low (Light Load Mode)
–2.0
Output Voltage Accuracy
Output Voltage Temp.
Coefficient
VOUT
–3.0
+2.0
—
+3.0
Variation from nominal VOUT
%
Variation from nominal VOUT;
–40°C to +125°C
TCVOUT
—
40
—
ppm/C
Line Regulation
(∆VOUT/VOUT)
/∆VIN
—
0.02
0.3
0.6
%/V
VIN = VOUT + 1V to 5.5V;
IOUT = 100 µA
Load Regulation
∆VOUT/VOUT
—
0.2
1.5
%
IOUT = 100 µA to 50 mA
—
dB
f = up to 1 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
f = 20 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
190
mA
VOUT = 0V
50
Ripple Rejection
PSRR
—
ILIM_LOWQ
80
30
Current Limit
2017-2018 Microchip Technology Inc.
120
DS20005839B-page 5
MIC2800
TABLE 1-3:
ELECTRICAL CHARACTERISTICS - LDO 1
Electrical Characteristics: VIN = VOUTDC/DC; EN1 = VIN; EN2 = GND; COUT1 = 2.2 µF, IOUT1 = 100 µA; TJ = 25°C,
bold values indicate –40°C≤ TJ ≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
LOWQ = High (Full Power Mode)
–2.0
+2.0
Output Voltage Accuracy
VOUT
Output Current Capability
IOUT
300
120
—
—
∆VOUT/VOUT
—
0.17
0.3
1.5
ILIM
350
500
700
Load Regulation
Current Limit
–3.0
—
+3.0
Variation from nominal VOUT
%
mA
%
PSRR
VN
—
30
IOUT = 100 µA to 150 mA
IOUT = 100 µA to 300 mA
VOUT = 0V
—
dB
f = up to 1 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
f = 20 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
—
µVRMS
COUT = 2.2 µF; CBYP = 0.1 µF;
10 Hz to 100 KHz
44
Output Voltage Noise
VIN ≥ 1.8V
VIN ≥ 1.5V
mA
70
Ripple Rejection
Variation from nominal VOUT;
–40°C to +125°C
LOWQ = Low (Light Load Mode)
–3.0
Output Voltage Accuracy
Load Regulation
Current Limit
VOUT
–4.0
+3.0
—
+4.0
Variation from nominal VOUT
%
Variation from nominal VOUT;
–40°C to +125°C
IOUT = 100 µA to 10 mA
∆VOUT/VOUT
—
0.2
0.5
1.0
%
ILIM
50
85
125
mA
VOUT = 0V
dB
f = up to 1 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
f = 20 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
70
Ripple Rejection
PSRR
—
—
42
DS20005839B-page 6
2017-2018 Microchip Technology Inc.
MIC2800
TABLE 1-4:
ELECTRICAL CHARACTERISTICS - LDO2
Electrical Characteristics: VIN = VOUTLDO2 + 1.0V; EN1 = GND; EN2 = VIN; COUT2 = 2.2 µF; IOUTLDO2 = 100 µA; TJ
= 25°C, bold values indicate–40°C≤ TJ ≤ +125°C; unless noted.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
LOWQ = High (Full Power Mode)
–2.0
Output Voltage Accuracy
VOUT
–3.0
+2.0
—
Line Regulation
(∆VOUT/VOUT)
/∆VIN
—
0.02
Load Regulation
∆VOUT/VOUT
—
0.20
0.25
0.40
—
70
94
142
Dropout Voltage
VDO
+3.0
0.3
0.6
Variation from nominal VOUT
%
%/V
VIN = VOUT +1V to 5.5V;
IOUT = 100 µA
%
IOUT = 100 µA to 150 mA
IOUT = 100 µA to 200 mA
IOUT = 100 µA to 300 mA
1.5
mV
300
75
Ripple Rejection
PSRR
—
Variation from nominal VOUT;
–40°C to +125°C
—
dB
40
Current Limit
ILIM
400
550
850
mA
Output Voltage Noise
VN
—
25
—
µVRMS
IOUT = 150 mA; VOUTLDO2 >= 2.7V
IOUT = 200 mA; VOUTLDO2 >= 2.7V
IOUT = 300 mA; VOUTLDO2 >= 2.7V
f = up to 1 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
f = 20 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
VOUT = 0V
COUT = 2.2 µF; CBYP = 0.1 µF;
10 Hz to 100 KHz
LOWQ = Low (Light Load Mode)
–3.0
Output Voltage Accuracy
VOUT
–4.0
+3.0
—
+4.0
Variation from nominal VOUT
%
Variation from nominal VOUT;
–40°C to +125°C
Line Regulation
(∆VOUT/VOUT)
/∆VIN
—
0.02
0.3
0.6
%/V
VIN = VOUT +1V to 5.5V
Load Regulation
∆VOUT/VOUT
—
0.2
1.0
%
IOUT = 100 µA to 10 mA
22
35
50
mV
IOUT = 10 mA; VOUTLDO2 >= 2.7V
—
dB
f = up to 1 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
f = 20 kHz; COUT = 2.2 µF;
CBYP = 0.1 µF
125
mA
VIN = 2.7V; VOUT = 0V
Dropout Voltage
VDO
—
75
Ripple Rejection
PSRR
—
ILIM
50
55
Current Limit
2017-2018 Microchip Technology Inc.
85
DS20005839B-page 7
MIC2800
TABLE 1-5:
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Storage Temperature Range
TS
–65
—
+150
°C
Lead Temperature
—
—
—
+260
°C
Junction Temperature
TJ
–40
—
+125
°C
θJA
—
45
—
°C/W
Soldering, 10 sec.
Package Thermal Resistance
16-Ld QFN
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
DS20005839B-page 8
2017-2018 Microchip Technology Inc.
MIC2800
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100%
95%
90%
85%
80%
75%
70%
65%
60%
55%
50%
4.2V
3.6V
3V
L=2.2 µH
COUT=2.2 µF
/LowQ=VIN
0
100
200
300
400
Output Current (mA)
Efficiency (%)
FIGURE 2-1:
500
4.2V
3.6V
3V
L=2.2 µH
COUT=2.2 µF
/LowQ=VIN
0
200
400
Output Current (mA)
ON
OFF
/LowQ=VIN
COUT=2.2 µF
2.7
600
DC/DC 1.87VOUT Efficiency.
100%
95%
90%
85%
80%
75%
70%
65%
60%
55%
50%
1000
950
900
850
800
750
700
650
600
550
500
Enabel Threshold (mV)
Efficiency (%)
Note:
3.4
4.1
4.8
Supply Voltage (V)
5.5
FIGURE 2-4:
DC/DC Enable Threshold
vs. Supply Voltage.
Turn-On Delay (µSec)
2.0
600
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
COUT=2.2 µF
/LowQ=VIN
2.7
3.2
3.7
4.2
Supply Voltage (V)
4.7
5.2
DC/DC 1.8VOUT Efficiency.
FIGURE 2-2:
FIGURE 2-5:
Supply Voltage.
DC/DC Turn-on Delay vs.
1400
1000
-60
800
-50
3.6V
600
4.2V
-40
400
EN1=EN2=VIN
/LowQ=VIN
COUT=2.2 µF
CBYP=0.01 µF
200
0
-40
-20
0
20 40 60
Temperature (ºC)
80
100 120
-30
dB
Current Limit (mA)
1200
-20
IOUT=50 mA
VOUT=1.8V
COUT=2.2 µF
-10
0
10
FIGURE 2-3:
Temperature.
DC/DC Current Limit vs.
100
1,000
10,000 100,000 1,000,000
Frequency (Hz)
FIGURE 2-6:
DC/DC LowQ Mode Power
Supply Rejection Ratio vs. Input Voltage.
2017-2018 Microchip Technology Inc.
DS20005839B-page 9
MIC2800
-80
Noise µV/¥Hz
dB
-60
-50
-40
-30
-20
-10
10
0 µA
100 µA
50 mA
-70
VIN=3.6V
VOUT=1.8V
0.1
VIN=4.2V
COUT=2.2 µF
VOUT=1.87V
0.01
0.001
0
10
100
10
1,000 10,000 100,000 1,000,000
Frequency (Hz)
FIGURE 2-7:
DC/DC LowQ Mode Power
Supply Rejection Ratio vs. Output Current.
1,000
100,000
Frequency (Hz)
-80
100 µA
-70
200
50 mA
-60
150
dB
-50
100
-40
-30
VOUT=1.8V
COUT=2.2 µF
50
VIN=4.2V
VOUT=1.2V
COUT=2.2 µF
CBYP=0.1µF
-20
-10
0
2.7
3.7
0
4.7
10
100
Supply Voltage (V)
FIGURE 2-8:
DC/DC LowQ Mode LDO
Current Limit vs. Supply Voltage.
1,000
10,000 100,000 1,000,000
Frequency (Hz)
FIGURE 2-11:
Power Supply Rejection
Ratio (LDO1 LowQ Mode).
1.90
-80
1.89
-70
1.88
-60
100 µA
50 mA
150 mA
-50
1.87
1.86
VIN=3.6V
VOUT=1.87V
COUT=2.2 µF
/LowQ=GND
1.85
1.84
0
10 20 30 40 50 60 70 80 90 100
Output Current (mA)
FIGURE 2-9:
DC/DC LowQ Mode LDO
Output Voltage vs. Output Current.
DS20005839B-page 10
dB
Output Votage (V)
10,000,000
FIGURE 2-10:
DC/DC LowQ Mode LDO
Output Noise Spectral Density.
250
Current Limit (mA)
1
-40
-30
VIN=4.2V
VOUT=1.2V
COUT=2.2 µF
CBYP=0.1 µF
/LowQ=VIN
-20
-10
0
10
100
1,000
10,000 100,000 1,000,000
Frequency (Hz)
FIGURE 2-12:
Power Supply Rejection
Ratio (LDO1 Normal Mode).
2017-2018 Microchip Technology Inc.
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
FIGURE 2-13:
Power Supply Rejection
Ratio (LDO2 LowQ Mode).
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
dB
100 µA
50 mA
150 mA
300 mA
VIN=3.6V
VOUT=2.8V
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=VIN
10
100
1,000 10,000 100,000 1,000,000
Frequency (Hz)
FIGURE 2-14:
Power Supply Rejection
Ratio (LDO2 Normal Mode).
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
2.50
60
55
VOUT=2.8V
VIN=Vout+1V
EN1=GND
EN2=VIN
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=VIN
50
45
40
35
30
1,000
10,000 100,000 1,000,000
Frequency (Hz)
-40
-20
0
FIGURE 2-16:
Temperature.
20
40
60
Temperature (C)
80
100
120
Ground Current vs.
70
60
Ground Current (µA)
100
10 µA
100 mA
300 mA
65
Ground Current (µA)
VIN=4.2V
VOUT=2.8V
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=GND
10
Output Voltage (V)
70
100 µA
10 mA
50 mA
50
40
30
VOUT=2.8V
VIN=VOUT+1V
COUT=2.2 µF
CBYP=0.01 µF
20
10
0
0
50
100
150
200
Output Current (mA)
FIGURE 2-17:
Current.
250
300
Ground Current vs. Output
140
120
VOUT=2.8V
VIN=VOUT+1V
EN1=GND
EN2=VIN
COUT=2.2 µF
CBYP=0.01 µF
-40
-20
FIGURE 2-15:
Temperature.
0
20
40
60
Temperature (C)
80
100 120
LDO2 Output Voltage vs.
2017-2018 Microchip Technology Inc.
Dropout Voltage (mV)
dB
MIC2800
100
80
60
40
VOUT = 2.8V
/LowQ=VIN
COUT= 2.2 µF
CBYP= 0.01 µF
20
0
0
FIGURE 2-18:
Output Current.
50
100
150
200
Output current (mA)
250
300
LDO2 Dropout Voltage vs.
DS20005839B-page 11
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
100
VOUT=2.8V
VIN=VOUT+1V
COUT=2.2 µF
CBYP=0.01 µF
LOWQ=VIN
-40
300 mA
150 mA
100 mA
50 mA
20 mA
-20
0
20
40
60
Temperature (ºC)
80
100
10
Noise µV/¥Hz
Dropout Voltage (V)
MIC2800
1
VIN=4.2V
VOUT=2.8V
COUT=2.2 µF
CBYP=0.01 µF
LOWQ=VIN
0.1
0.01
0.001
120
10
1,000
100,000
10,000,000
Frequency (Hz)
LDO 2 Dropout Voltage vs.
3
2.5
2
1.5
1
COUT=2.2 µF
CBYP=0.01 µF
/LOWQ=VIN
0.5
0
0
1
100 mA
150 mA
300 mA
2
3
4
Supply Voltage (V)
5
LDO2 Output Noise Spectral
400 mA
10 mA
VOUT=1.8V
VIN=VOUT+1V
/LowQ=VIN
COUT=2.2 µF
CBYP=0.01µF
Output Voltage
AC Coupled
(100 mV/div)
Output Voltage (V)
FIGURE 2-22:
Density.
Output Current
(200 mA/div)
FIGURE 2-19:
Temperature.
6
Time (20µs/div)
FIGURE 2-20:
Dropout Characteristics.
FIGURE 2-23:
PWM Mode.
DC/DC Load Transient
Input Voltage
(1 V/div)
1
0.1
0.01
0.001
VIN=4.2V
COUT=2.2 F
CBYP=0.1 µF
VOUT=1.2V
/LowQ=VIN
10
1,000
100,000
Frequency (Hz)
FIGURE 2-21:
Density.
DS20005839B-page 12
10,000,000
VOUT=1.87V
VIN=VOUT+1V
IOUT=100 mA
COUT=2.2 µF
CBYP=0.01 μF
/LowQ=VIN
Output Voltage
AC Coupled
(100 mV/div)
Noise µV/¥Hz
10
LDO1 Output Noise Spectral
Time (20 µs/div)
FIGURE 2-24:
Mode.
DC/DC Line Transient PWM
2017-2018 Microchip Technology Inc.
VOUT
(500 mV/div)
VOUT=1.8V
VIN=3.6V
IOUT=300 mA
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=VIN
Vout
(500 mV/div)
Enable Voltage
(500 mV/div)
Supply Voltage &
Enable Voltage
(2 V/div)
MIC2800
VOUT=1.8V
VIN=EN1=3.8V
IOUT=100 µA
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=GND
Time (40 µs/div)
Time (20 µs/div)
Enable Transient PWM
Enable Transient LowQ
300 mA
100 uA
Output Current
(100 mV/div)
Output Voltage
AC Coupled
(20 mV/div)
Output Current
(20 mA/div)
50 mA
VOUT=1.8V
VIN=VOUT+1V
/LowQ=GND
COUT=2.2 µF
CBYP=0.01 µF
FIGURE 2-28:
Mode.
Output Voltage
AC Coupled
(100 mV/div)
FIGURE 2-25:
Mode.
VOUT=2.8V
VIN=3.6V
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=VIN
100 uA
Time (4 µs/div)
Time (10 µs/div)
FIGURE 2-29:
Normal Mode.
VOUT=2.8V
VIN=VOUT+1V
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=GND
Output Current
(25 mA/div)
Output Voltage
AC Coupled
(50 mV/div)
VOUT=1.87V
VIN=VOUT+1V
IOUT=10 mA
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=GND
50 mA
100 uA
Time (20 µs/div)
FIGURE 2-27:
Mode.
LDO2 Load Transient
Output Voltage
AC Coupled
(50m V/div)
DC/DC Load Transient
Input Voltage
(1 V/div)
FIGURE 2-26:
LowQ Mode.
DC/DC Line Transient LowQ
2017-2018 Microchip Technology Inc.
Time (200 µs/div)
FIGURE 2-30:
Mode.
LDO Load Transient LowQ
DS20005839B-page 13
Input Voltage
(1 V/div)
MIC2800
5.5 V
Output Voltage
AC Coupled
(50 mV/div)
LowQ Voltage
(1 V/div)
VOUT=1.87V
IOUT=100 mA
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=VIN
Output Voltage
AC Coupled
(50 mV/div)
4V
VIN=3.3V
VOUT=1.8V
CBYP=0.01 µf
COUT=2.2 µF+100 nF+10 µF
IOUT = 50 mA
Time (100 µs/div)
Time (20 µs/div)
FIGURE 2-34:
Mode Transition.
5.5 V
4V
VOUT=1.87V
IOUT=10 mA
COUT=2.2 µF
CBYP=0.01 µF
/LowQ=GND
CBYP=0.01 µF
/LowQ=VIN
L=2.2 µH
FIGURE 2-35:
DC/DC PWM Waveform.
VIN=3.3V
VOUT=1.8V
CBYP=0.01 µf
COUT=2.2 µF+100 nF+10 µF
IOUT = 50 mA
Output Voltage
AC Coupled
(50 mV/div)
LowQ Voltage
(1 V/div)
LDO2 Line Transient LowQ
VOUT=1.8V
VIN=4V
COUT=2.2 µF
Time (400 µs/div)
Time (40 µs/div)
FIGURE 2-32:
Mode.
DC/DC PWM Mode to LowQ
Output Voltage
AC Couple
(10 mV/div)
LowQ Voltage
(2 V/div)
LDO2 Line Transient Normal
VOUT
AC Coupled
(50 mV/div)
Input Voltage
(1 V/div)
FIGURE 2-31:
Mode.
Time (100 µs/div)
FIGURE 2-33:
Mode Transition.
DS20005839B-page 14
DC/DC LowQ Mode to PWM
FIGURE 2-36:
POR Behavior, EN1 = High,
Low-to-High Transition on EN2.
2017-2018 Microchip Technology Inc.
MIC2800
ESR (mȍ)
100
10
STABLE AREA
1
0.1
0
FIGURE 2-37:
POR Behavior, EN2 = High,
Low-to-High Transition on EN1.
FIGURE 2-40:
50
100
Output Current (mA)
150
ESR vs. Load - LDO1.
ESR (mȍ)
100
10
STABLE AREA
1
0.1
0
FIGURE 2-41:
50
100
Output Current (mA)
150
ESR vs. Load - LDO2.
FIGURE 2-38:
CSET Pin Voltage and POR
Delay Time Behavior for Correct Sequencing.
ESR (mȍ)
100
10
STABLE AREA
1
0.1
0
FIGURE 2-39:
50
100
Output Current (mA)
150
ESR vs. Load - LDO.
2017-2018 Microchip Technology Inc.
DS20005839B-page 15
MIC2800
NOTES:
DS20005839B-page 16
2017-2018 Microchip Technology Inc.
MIC2800
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
16-Pin QFN
Pin Name
1
LOWQ
2
BIAS
3
SGND
Signal ground.
4
PGND
Power ground.
5
SW
Switch (Output): Internal power MOSFET output switches.
6
VIN
Supply Input – DC/DC. Must be tied to PIN7 externally.
7
VIN
Supply Input – LDO2. Must be tied to PIN6 externally.
8
LDO2
9
FB
3.1
Description
LOWQ Mode. Active Low Input. Logic High = Full Power Mode; Logic Low = LOWQ
Mode; Do not leave floating.
Internal circuit bias supply. It must be decoupled to signal ground with a 0.1 µF
capacitor and should not be loaded.
Output of LDO regulator 2.
Feedback. Input to the error amplifier for DC/DC converter. For fixed output voltages
connect directly to VOUT and an internal resistor network sets the output voltage.
10
LDO
LDO Output: Connect to VOUT of the DC/DC for LOWQ mode operation.
11
LDO1
Output of LDO regulator 1.
12
POR
Power-on Reset Output: Open-drain output. Active low indicates an output
undervoltage condition on either one of the three regulated outputs.
13
CSET
Delay Set Input: connect external capacitor to GND to set the internal delay for the
POR output. When left open, there is a minimum delay. This pin cannot be grounded.
14
CBYP
Reference Bypass: connect external 0.1 µF to GND to reduce output noise. May be left
open.
15
EN1
Enable Input (DC/DC and LDO1). Active High Input. Logic high = On; Logic low = Off;
do not leave floating.
16
EN2
Enable Input (LDO 2). Active High Input. Logic high = On; Logic low = Off; do not leave
floating.
LOWQ
The LOWQ pin provides a logic level control between
the internal PWM mode and the low noise linear
regulator mode. With LOWQ pulled low (1V), the device
transitions into a constant frequency PWM buck
regulator mode. This allows the device the ability to
efficiently deliver up to 600 mA of output current at the
same output voltage and to support load transients
generated by processor activity.
LOWQ mode also limits the output load of both LDO1
and LDO2 to 10 mA.
3.2
BIAS
The BIAS pin supplies the power to the internal control
and reference circuitry. The bias is powered from AVIN
through an internal 6Ω resistor. A small 0.1 µF ceramic
capacitor is required for bypassing.
3.3
SGND
Signal ground (SGND) is the ground path for the
biasing and control circuitry. The current loop for the
signal ground should be as small as possible.
3.4
PGND
Power ground (PGND) is the ground path for the high
current PWM mode. The current loop for the power
ground should be as small as possible.
The ESD protection of the LOWQ pin is free from
clamping diodes to the input supply rails, therefore the
LOWQ signal can be driven by host I/Os under backup
power domains without the risk of parasitic leakage,
even if the main power to the MIC2800 is removed.
2017-2018 Microchip Technology Inc.
DS20005839B-page 17
MIC2800
3.5
SW
The switch (SW) pin is the common connection
between the internal power MOSFETs and connects
directly to the inductor. Due to the high-speed switching
on this pin, the switch node should be routed away from
sensitive nodes.
3.6
VIN
Two input voltage pins provide power to the switch
mode DC/DC and LDO2 separately. The LDO1 input
voltage is provided by the DC/DC LDO pin. VIN
provides power to the LDO section and the bias
through an internal 6Ω resistor. Both VIN pins must be
tied together.
For the switch mode DC/DC regulator, VIN provides
power to the MOSFET along with current limiting
sensing. Due to the high switching speeds, a 4.7 µF
minimum ceramic capacitor is recommended close to
VIN and the power ground (PGND) pin for bypassing.
3.7
FB
Connect the feedback pin to VOUT for fixed output
voltage versions. For adjustable output version, an
external resistor divider is used to program the output
voltage.
3.9
LDO
The LDO pin is the output of the LOWQ mode linear
regulator and should be connected to the output of the
DC/DC converter. In LOWQ mode (LOWQ < 0.2V), the
LDO supplies the output current and supports the
output voltage in place of the DC/DC stage. In PWM
mode (LOWQ > 1V) the LDO pin provides power to
LDO1.
3.10
LDO1
Regulated output voltage of LDO1. Input power is
provided by the DC/DC switching regulator. The
minimum recommended output capacitance is 2.2 µF
ceramic.
3.11
In steady-state conditions, the POR output is high if at
least one channel (LDO2 and DC-DC, LDO1) is
enabled and has reached regulation. This is equivalent
to performing a logic OR operation on the status of the
output voltages.
If any of the outputs is subsequently pulled out of
regulation (e.g., due to a momentary overload), the
POR signal goes low and it remains low as long as the
affected output is out of regulation. If the affected
output returns in regulation, POR is asserted high after
the delay time programmed with the capacitor at the
CSET pin.
The ESD protection of the POR pin is free from
clamping diodes to the input supply rails. Therefore, the
POR signal can be asserted to host I/Os under backup
power domains or pulled up to backup power sources
without the risk of parasitic leakage, even if the main
power to the MIC2800 is removed.
LDO2
Regulated output voltage of LDO2. Power is provided
by VIN. The minimum recommended output
capacitance is 2.2 µF ceramic.
3.8
programmable with a capacitor from the CSET pin to
ground. The delay time can be programmed to be as
long as 1 second.
Power-on Reset (POR)
The Power-on Reset (POR) output is an open-drain
N-channel device, requiring a pull-up resistor to either
the input voltage or output voltages for proper voltage
levels. The POR output has a delay time that is
DS20005839B-page 18
3.12
CSET
The CSET pin is a current source output that charges a
capacitor that sets the delay time for the Power-on
Reset output from low-to-high. The delay for POR highto-low (detecting an undervoltage on any of the
outputs) is always minimal. The current source of
1.25 µA charges a capacitor up from 0V. When the
capacitor reaches 1.25V, the output of the POR is
allowed to go high. The delay time in microseconds is
equal to the CSET capacitor value in picofarads.
EQUATION 3-1:
PORDelay s = CSET pF
3.13
CBYP
The internal reference voltage can be bypassed with a
capacitor to ground to reduce output noise and
increase power supply rejection (PSRR). A quick-start
feature allows for quick turn on of the output voltage.
The recommended nominal bypass capacitor is 0.1 µF,
but it can be increased, which will also result in an
increase to the start-up time.
3.14
EN1, EN2
Both enable inputs are active high, requiring 1.0V for
guaranteed logic HIGH level detection (VIH=1.0V MIN).
EN1 provides logic control of both the DC/DC regulator
and LDO1. EN2 provides logic control for LDO2 only.
The enable inputs are CMOS logic and cannot be left
floating.
2017-2018 Microchip Technology Inc.
MIC2800
The enable pins provide logic level control of the
specified outputs. When both enable pins are in the
OFF state, supply current of the device is greatly
reduced (typically < 1 µA). When the DC/DC regulator
is in the OFF state, the output drive is placed in a
“tri-stated” condition, where both the high side
P-channel MOSFET and the low-side N-channel are in
an OFF or nonconducting state. Do not drive either of
the enable pins above the supply voltage.
2017-2018 Microchip Technology Inc.
DS20005839B-page 19
MIC2800
4.0
APPLICATION INFORMATION
The MIC2800 is a digital power management IC with a
single integrated buck regulator and two low dropout
regulators. LDO1 is a 300 mA low dropout regulator
that uses power supplied by the onboard buck
regulator. LDO2 is a 300 mA low dropout regulator
using the supply from the input pin. The buck regulator
is a 600 mA PWM power supply that utilizes a LOWQ
light load mode to maximize battery efficiency in light
load conditions. This is achieved with a LOWQ control
pin that, when pulled low, shuts down all the biasing
and drive current for the PWM regulator, drawing only
20 µA of operating current. This allows the output to be
regulated through the LDO output, capable of providing
60 mA of output current. This method has the
advantage of producing a clean, low-current,
ultra-low-noise output in LOWQ mode. During LOWQ
mode, the SW node becomes high-impedance,
blocking current flow. Other methods of reducing
quiescent current, such as Pulse Frequency
Modulation (PFM) or bursting techniques may create
large-amplitude, low-frequency ripple voltages that can
be detrimental to system operation.
When more than 60 mA is required, the LOWQ pin can
be forced high, causing the MIC2800 to enter in PWM
mode. In this case, the LDO output makes a “hand-off”
to the PWM regulator with virtually no variation in
output voltage. The LDO output then turns off, allowing
up to 600 mA of current to be efficiently supplied
through the PWM output to the load.
4.1
Output Capacitor
LDO1 and LDO2 outputs require at least a 2.2 µF
ceramic output capacitor for stability. The DC/DC
switch mode regulator requires at least a 2.2 µF
ceramic output capacitor to be stable. All output
capacitor values can be increased to improve transient
response. X7R/X5R dielectric type ceramic capacitors
are recommended because of their temperature
performance. X7R-type capacitors change capacitance
by 15% over their operating temperature range and are
the most stable type of ceramic capacitors. Z5U and
Y5V dielectric capacitors change value by as much as
50% to 60% respectively over their operating
temperature ranges and are therefore not
recommended.
4.2
Input Capacitor
value of the input capacitor can be increased as
needed to better suppress the input ripple generated by
the DC/DC converter.
4.3
Inductor Selection
The MIC2800 is designed for use with a 2.2 µH
inductor. Proper selection should ensure the inductor
can handle the maximum average and peak currents
required by the load. Maximum current ratings of the
inductor are generally given in two methods;
permissible DC current and saturation current.
Permissible DC current can be rated either for a 40°C
temperature rise or a 10% to 20% loss in inductance.
Ensure that the inductor selected can handle the
maximum operating current. When saturation current is
specified, make sure that there is enough margin that
the peak current will not saturate the inductor. Peak
inductor current can be calculated as follows:
EQUATION 4-1:
V OUT
VOUT 1 – ----------------
VIN
I PK = IOUT + -----------------------------------------------2fL
4.4
POR Delay Time
The POR signal also goes low for the duration of the
delay time given by Eq. 3.1 when only one of the enable
inputs (EN1, EN2) transitions from low to high, with the
other being already high and the corresponding output
being in regulation. This is shown in Fig. 2-36 and Fig.
2-37. At the low-to-high transition of either enable input,
the CSET pin capacitor is discharged to ground, and the
POR delay time is restarted.
At start-up, in order to prevent a momentary high glitch
of the POR signal between the first and the second
enable, it is recommended to set the POR delay time
longer than the maximum delay expected between the
enable signals plus the turn-on time tTURN-ON.
For a given delay between the enable signals, an
example of correct POR delay time design is shown in
Fig. 2-38. It can be seen that the CSET voltage is reset
to ground by the latter low-to-high enable transition
before it reaches the VTHCSET voltage (1.25V TYP).
A minimum 1 µF ceramic is recommended on the VIN
pin for bypassing. X5R or X7R dielectrics are
recommended for the input capacitor. Y5V dielectrics
lose most of their capacitance over temperature and
are therefore, not recommended. A minimum 1 µF is
recommended close to the VIN and PGND pins for high
frequency filtering. Smaller-case-size capacitors are
recommended due to their lower ESR and ESL. The
DS20005839B-page 20
2017-2018 Microchip Technology Inc.
MIC2800
NOTES:
2017-2018 Microchip Technology Inc.
DS20005839B-page 21
MIC2800
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
16-lead QFN
Example
Part Number
Code
MIC2800-A4SYML-TR
YA4S
MIC2800-D24MYML-TR
YD24M
YG4J
MIC2800-D2FMYML-TR
YD2FM
256
MIC2800-G2SYML-TR
YG2S
MIC2800-G4JYML-TR
YG4J
MIC2800-G4KYML-TR
YG4K
MIC2800-G4MYML-TR
YG4M
MIC2800-G4SYML-TR
YG4S
MIC2800-G7SYML-TR
YG7S
MIC2800-G1JJYML-TR
G1JJ
MIC2800-G1JSYML-TR
G1JS
MIC2800-GFMYML-TR
YGFM
MIC2800-GFSYML-TR
YGFS
MIC2800-G8SYML-TR
YG8S
1729Y
Refer to the Product Identification System
section for information on the output voltage
for each device.
Legend: XX...X
Y
YY
WW
NNN
e3
*
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (⎯) symbol may not be to scale.
DS20005839B-page 22
2017-2018 Microchip Technology Inc.
MIC2800
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
2017-2018 Microchip Technology Inc.
DS20005839B-page 23
MIC2800
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
DS20005839B-page 24
2017-2018 Microchip Technology Inc.
MIC2800
APPENDIX A:
REVISION HISTORY
Revision B (September 2018)
• Updated Section 5.0, Packaging Information
and Section “Product Identification System”
by adding the G8S option.
Revision A (October 2017)
• Original release of this document.
2017-2018 Microchip Technology Inc.
DS20005839B-page 25
MIC2800
NOTES:
DS20005839B-page 26
2017-2018 Microchip Technology Inc.
MIC2800
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
PART NO. –
Device
X
XX
X
–
XX(1)
Examples:
a) MIC2800-A4SYML-TR:
Digital Power Management
IC 2 MHz, 600 mA DC/DC
with Dual 300 mA/300 mA
Low VIN LDOs,
Adjustable/1.2V/3.3V
Output Voltage,
–40°C to +125°C, 16LD QFN
Package, Tape and Reel
b) MIC2800-D24MYML-TR:
Digital Power Management
IC 2 MHz, 600 mA DC/DC
with Dual 300 mA/300 mA
Low VIN LDOs, 1.87V/1.2V/2.8V
Output Voltage, –40°C to +125°C
16LD QFN Package,
Tape and Reel
c) MIC2800-D2FMYML-TR:
Digital Power Management
IC 2 MHz, 600 mA DC/DC
with Dual 300 mA/300 mA
Low VIN LDOs, 1.87V/1.5V/2.8V
Output Voltage, –40°C to +125°C
16LD QFN Package,
Tape and Reel
d) MIC2800-G2SYML-TR:
Digital Power Management
IC 2 MHz, 600 mA DC/DC
with Dual 300 mA/300 mA
Low VIN LDOs, 1.8V/1.05V/3.3V
Output Voltage, –40°C to +125°C
16LD QFN Package,
Tape and Reel
e) MIC2800-G4JYML-TR:
Digital Power Management
IC 2 MHz, 600 mA DC/DC
with Dual 300 mA/300 mA
Low VIN LDOs, 1.8V/1.2V/2.5V
Output Voltage, –40°C to +125°C
16LD QFN Package,
Tape and Reel
Output Temperature Package Tape and Reel Option
Voltage
Device:
MIC2800:
Digital Power Management IC 2 MHz,
600 mA DC/DC with Dual 300 mA/300 mA
Low VIN LDOs
Output Voltages:
(DC/DC, LDO1,
LDO2)
A4S =
D24M=
D2FM=
G2S =
G4J =
G4K =
G4M =
G4S =
G7S =
G1JJ=
G1JS=
G8S =
Adjustable/1.2V/3.3V
1.87V/1.2V/2.8V
1.87V/1.5V/2.8V
1.8V/1.05V/3.3V
1.8V/1.2V/2.5V
1.8V/1.2V/2.6V
1.8V/1.2V/2.8V
1.8V/1.2V/3.3V
1.8V/1.575V/3.3V
1.8V/1.25V/2.5V
1.8V/1.25V/3.3V
1.8V/1.15V/3.3V
Temperature:
Y
=
Pb-Free with Industrial Temperature Grade
(–40°C to +125°C)
Package:
ML
=
16-lead, 3x3 mm QFN, 0.85 mm thickness
Tape and Reel:
TR
= Tape and Reel
Note 1:
2017-2018 Microchip Technology Inc.
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the Tape
and Reel option.
DS20005839B-page 27
MIC2800
NOTES:
DS20005839B-page 28
2017-2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo,
SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, INICnet, Inter-Chip Connectivity,
JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation,
PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon,
QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O,
SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3333-0
== ISO/TS 16949 ==
2017-2018 Microchip Technology Inc.
DS20005839B-page 29
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DS20005839B-page 30
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2017-2018 Microchip Technology Inc.
08/15/18
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