MIC4421A/22A
9A Peak Low-Side MOSFET Drivers
Features
General Description
•
•
•
•
The MIC4421A and MIC4422A MOSFET drivers are
rugged, efficient, and easy to use. The MIC4421A is an
inverting driver, while the MIC4422A is a non-inverting
driver.
•
•
•
•
•
•
•
High Output Current: 9A Peak (Typical)
Wide Operating Range: 4.5V to 18V (Typical)
Minimum Pulse Width: 50 ns
Latch-Up Proof: Fully Isolated Process is
Inherently Immune to Any Latch-Up
Input Will Withstand Negative Swing of Up to 5V
High Capacitive Load Drive: 47,000 pF
Low Delay Time: 15 ns (Typical)
Logic High Input for Any Voltage from 2.4V to VS
Low Equivalent Input Capacitance: 7 pF (typical)
Low Supply Current: 500 µA (Typical)
Output Voltage Swing to Within 25 mV of GND or
VS
Both versions are capable of 9A (peak) output and can
drive the largest MOSFETs with an improved safe
operating margin. The MIC4421A/4422A accepts any
logic input from 2.4V to VS without external speed-up
capacitors or resistor networks. Proprietary circuits
allow the input to swing negative by as much as 5V
without damaging the part. Additional circuits protect
against damage from electrostatic discharge.
MIC4421A/22A drivers can replace three or more
discrete
components,
reducing
PCB
area
requirements, simplifying product design, and reducing
assembly cost.
Applications
•
•
•
•
•
•
•
•
Modern
Bipolar/CMOS/DMOS
construction
guarantees freedom from latch-up. The rail-to-rail
swing capability of CMOS/DMOS ensures adequate
gate voltage to the MOSFET during power up/down
sequencing. Because these devices are fabricated on
a self-aligned process, they have very low crossover
current, run cool, use little power, and are easy to drive.
Switch Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class-D Switching Amplifiers
Line Drivers
Driving MOSFET or IGBT Parallel Chip Modules
Local Power On/Off Switch
Pulse Generators
Package Types
MIC4421A/22A
SOIC-8 (M)
PDIP-8 (N)
(Top View)
8 VS
IN 2
7 OUT
NC 3
6 OUT
GND 4
5 GND
2021 Microchip Technology Inc.
TAB
VS 1
MIC4421A/22A
5-Lead TO-220 (T)
(Top View)
5
4
3
2
1
OUT
GND
VS
GND
IN
DS20006511A-page 1
MIC4421A/22A
Typical Application Circuit
LOAD
LOAD
VOLTAGE
VS
+15V
1μF
1
0.1μF
0.1μF
ON
OFF
MIC4422A
VS OUT
8
VS OUT
2 IN
Si9410DY*
N-CHANNEL
MOSFET
7
6
GND 4,5
*SILICONIX 30M, 7A MAX
† LOAD VOLTAGE LIMITED BY MOSFET
DRAIN-TO-SOURCE RATING
Functional Block Diagram
VS
0.3mA
MIC4421A
INVERTING
0.1mA
Q3
Q2
OUT
IN
N
Q1
MIC4422A
NONINVERTING
Q4
GND
DS20006511A-page 2
2021 Microchip Technology Inc.
MIC4421A/22A
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VS) ..................................................................................................................................................+20V
Control Input Voltage (VIN)........................................................................................................... VS + 0.3V to GND – 5V
Control Input Current (VIN > VS) .............................................................................................................................50 mA
Power Dissipation (TA ≤ +25°C, Note 1)
PDIP (JA) ..........................................................................................................................................................1478 mW
SOIC (JA)............................................................................................................................................................767 mW
TO-220 (JA) ..........................................................................................................................................................1756W
ESD Rating (Note 2) .................................................................................................................................................. 2 kV
Operating Ratings ††
Supply Voltage (VS) ................................................................................................................................... +4.5V to +18V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Minimum footprint.
2: Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5 kΩ in series with
100 pF.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: TA = +25°C with 4.5V ≤ VS ≤ 18V, bold values valid for X Version: –55°C ≤ TA ≤ +125°C,
for Y Version: –40°C ≤ TA ≤ +85°C, and for Z Version: 0°C ≤ TA ≤ +70°C, unless noted.
Parameter
Sym.
Min.
Typ.
Max.
Units
VS
4.5
—
18
V
—
0.5
1.5
—
—
3
—
50
150
—
—
200
Conditions
Power Supply
Operating Input Voltage
High Output Quiescent
Current
IS
Low Output Quiescent
Current
—
mA
VIN = 3V (MIC4422A), VIN = 0
(MIC4421A)
µA
VIN = 0V (MIC4422A), VIN = 3V
(MIC4421A)
Input
Logic 1 Input Voltage
VIH
3.0
2.1
—
V
See Figure 1-3
Logic 0 Input Voltage
VIL
—
1.5
0.8
V
See Figure 1-3
Input Voltage Range
VIN
–5
—
VS + 0.3
V
—
Input Current
IIN
–10
—
10
µA
0V ≤ VIN ≤ VS
High Output Voltage
VOH
VS + .025
—
—
V
See Figure 1-1
Low Output Voltage
VOL
—
—
0.025
V
See Figure 1-1
—
0.6
1.0
—
—
3.6
Ω
IOUT = 10 mA, VS = 18V
—
0.8
1.7
—
—
2.7
Ω
IOUT = 10 mA, VS = 18V
Output
Output Resistance,
Output High
Output Resistance,
Output Low
Note 1:
RO
Guaranteed by design.
2021 Microchip Technology Inc.
DS20006511A-page 3
MIC4421A/22A
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: TA = +25°C with 4.5V ≤ VS ≤ 18V, bold values valid for X Version: –55°C ≤ TA ≤ +125°C,
for Y Version: –40°C ≤ TA ≤ +85°C, and for Z Version: 0°C ≤ TA ≤ +70°C, unless noted.
Parameter
Sym.
Min.
Typ.
Max.
Units
Conditions
Peak Output Current
IPK
—
9
—
A
VS = 18V, See Figure 5-2
Continuous Output
Current
IDC
—
2
—
A
—
Latch-Up Protection
Withstand Reverse
Current
IR
>1500
—
—
mA
Duty Cycle ≤ 2%, t ≤ 300 µs, Note 1
—
20
75
—
—
120
ns
Figure 1-1, CL = 10,000 pF
—
24
75
—
—
120
ns
Figure 1-1, CL = 10,000 pF
—
15
68
—
—
80
ns
Figure 1-1
—
35
60
—
—
80
ns
Figure 1-1
Switching Time, Note 1
Rise Time
tr
Fall Time
tf
tD1
Delay Time
tD2
Minimum Input Pulse
Width
tPW
—
50
—
ns
See Figure 1-1 and Figure 1-2.
Maximum Input
Frequency
fMAX
—
1
—
MHz
See Figure 1-1 and Figure 1-2.
Note 1:
Guaranteed by design.
Test Circuits
Note that the output pulse width may increase with input pulse widths less than 50 ns.
VS = 18V
VS = 18V
0.1μF
0.1μF
4.7μF
VOUT
VIN
0.1μF
0.1μF
VOUT
VIN
10,000pF
10,000pF
MIC4421A
INPUT
MIC4422A
5V
90%
2.5V
tPW 50ns
10%
0V
VS
90%
tD1
tPW
tF
tD2
tR
10%
0V
DS20006511A-page 4
INPUT
5V
90%
2.5V
tPW 50ns
10%
0V
VS
90%
tD1
tPW
tR
tD2
tF
OUTPUT
OUTPUT
FIGURE 1-1:
Time.
4.7μF
10%
0V
Inverting Driver Switching
FIGURE 1-2:
Switching Time.
Non-Inverting Driver
2021 Microchip Technology Inc.
MIC4421A/22A
Control Input Behavior
LOGIC 1
LOGIC 0
GUARANTEED
VIL
0.8V
TYPICAL
VIL
0V
1.5V
FIGURE 1-3:
GUARANTEED
VIH
3V
TYPICAL
VIH
V
2.1V
S
Input Hysteresis.
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Maximum Junction Temperature
TJ
—
—
+150
°C
Conditions
Temperature Ranges
—
Storage Temperature Range
TS
–65
—
+150
°C
—
Lead Temperature
—
—
—
+300
°C
Soldering, 10 sec.
0
—
+70
°C
Z option
Ambient Operating Temperature Range
TA
–40
—
+85
°C
Y option
–55
—
+125
X option
Package Thermal Resistances
Thermal Resistance, PDIP 8-Ld
JA
—
84.6
—
°C/W
—
Thermal Resistance, SOIC 8-Ld
JA
—
163
—
°C/W
—
Thermal Resistance, TO-220 5-Ld
JA
—
71.2
—
°C/W
—
Thermal Resistance, PDIP 8-Ld
JC
—
41.2
—
°C/W
—
Thermal Resistance, SOIC 8-Ld
JC
—
38.8
—
°C/W
—
Thermal Resistance, TO-220 5-Ld
JC
—
6.5
—
°C/W
—
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2021 Microchip Technology Inc.
DS20006511A-page 5
MIC4421A/22A
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
300
220
200
180
160
140
120
100
80
60
40
20
0
250
5V
47,000pF
22,000pF
4
6
8 10 12 14
SUPPLY VOLTAGE (V)
16
10V
100
18V
100
1000
10k
CAPACITIVE LOAD (pF)
FIGURE 2-4:
Load.
100k
Rise Time vs. Capacitive
300
250
47,000pF
22,000pF
4
6
8 10 12 14
SUPPLY VOLTAGE (V)
16
150
10V
100
0
18
100
1000
10k
CAPACITIVE LOAD (pF)
FIGURE 2-5:
Load.
60
100k
Fall Time vs. Capacitive
10 -7
C L = 10,000pF
V S = 18V
CROSSOVER ENERGY (A•s)
PER TRANSITION
tFALL
40
30
20
tRISE
10
0
5V
18V
Fall Time vs. Supply
50
200
50
10,000pF
FIGURE 2-2:
Voltage.
TIME (ns)
150
0
18
Rise Time vs. Supply
220
200
180
160
140
120
100
80
60
40
20
0
200
50
10,000pF
FIGURE 2-1:
Voltage.
FALL TIME (ns)
RISE TIME (ns)
RISE TIME (ns)
Note:
TYPICAL PERFORMANCE CURVES
FALL TIME (ns)
2.0
-40
0
40
80
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
DS20006511A-page 6
120
Rise and Fall Times vs.
10 -8
10 -9
4
FIGURE 2-6:
Supply Voltage.
6
8 10 12
VOLTAGE (V)
14
16
18
Crossover Energy vs.
2021 Microchip Technology Inc.
180
50
kH
z
100
1000
10k
CAPACITIVE LOAD (pF)
FIGURE 2-7:
Supply Current vs.
Capacitive Load (VS = 18V).
140
20
10M
V S = 12V
50
0k
30
Hz
Hz
1M
kH
z
100
1000
10k
CAPACITIVE LOAD (pF)
pF
F
0.01μ
0.1μF
60
40
20
0
100k
FIGURE 2-8:
Supply Current vs.
Capacitive Load (VS = 12V).
80
1000
60
SUPPLY CURRENT (mA)
90
20
10k
100k
1M
FREQUENCY (Hz)
10M
FIGURE 2-11:
Supply Current vs.
Frequency (VS = 12V).
60
75
V S = 5V
V S = 5V
20
15
50
kH
z
Hz
1M
0k
Hz
30
100
1000
10k
CAPACITIVE LOAD (pF)
100k
FIGURE 2-9:
Supply Current vs.
Capacitive Load (VS = 5V)
2021 Microchip Technology Inc.
0.01μ
40
30
1000
pF
45
SUPPLY CURRENT (mA)
60
F
50
0.1μF
SUPPLY CURRENT (mA)
100k
1M
FREQUENCY (Hz)
100
120
SUPPLY CURRENT (mA)
10k
120
V S = 12V
0
F
60
40
FIGURE 2-10:
Supply Current vs.
Frequency (VS = 18V).
150
0
1000
80
pF
120
100
0
100k
V S = 18V
0.01μ
Hz
1M
SUPPLY CURRENT (mA)
160
0.1μF
V S = 18V
z
220
200
180
160
140
120
100
80
60
40
20
0
20
0k
H
SUPPLY CURRENT (mA)
MIC4421A/22A
20
10
0
10k
100k
1M
FREQUENCY (Hz)
10M
FIGURE 2-12:
Supply Current vs.
Frequency (VS = 5V).
DS20006511A-page 7
MIC4421A/22A
50
1000
30
20
tD1
10
0
4
6
8 10 12 14
SUPPLY VOLTAGE (V)
TIME (ns)
FIGURE 2-13:
Supply Voltage.
120
110
100
90
80
70
60
50
40
30
20
10
0
16
18
Propagation Delay vs.
V S = 10V
tD2
0
2
FIGURE 2-14:
Amplitude.
tD1
8
4
6
INPUT (V)
10
Propagation Delay vs. Input
tD2
20
tD1
10
0
-40
0
40
80
TEMPERATURE (°C)
FIGURE 2-15:
Temperature.
DS20006511A-page 8
120
Propagation Delay vs.
LOW-STATE OUTPUT RESISTANCE (:)
TIME (ns)
30
100
INPUT = 0
10
-40
0
40
80
TEMPERATURE (°C)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
120
Quiescent Supply Current
T J = 150°C
T J = 25°C
4
6
8 10 12 14
SUPPLY VOLTAGE (V)
16
18
FIGURE 2-17:
High-State Output
Resistance vs. Supply Voltage.
50
40
INPUT = 1
FIGURE 2-16:
vs. Temperature.
HIGH-STATE OUTPUT RESISTANCE (:)
TIME (ns)
tD2
QUIESCENT SUPPLY CURRENT (μA)
V S = 18V
40
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T J = 150°C
T J = 25°C
4
6
8 10 12 14
SUPPLY VOLTAGE (V)
16
18
FIGURE 2-18:
Low-State Output
Resistance vs. Supply Voltage.
2021 Microchip Technology Inc.
MIC4421A/22A
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
PDIP/SOIC
Pin Number
TO-220
Pin Name
2
1
IN
4, 5
2, 4
GND
1, 8
3, TAB
VS
6, 7
5
OUT
3
—
NC
2021 Microchip Technology Inc.
Description
Control Input.
Ground: Duplicate pins must be externally connected.
Supply Input: Duplicate pins must be externally connected.
Output: Duplicate pins must be externally connected.
Not connected.
DS20006511A-page 9
MIC4421A/22A
4.0
FUNCTIONAL DESCRIPTION
Refer to the Functional Block Diagram.
The MIC4422A is a non-inverting driver. A logic high on
the IN produces gate drive output. The MIC4421A is an
inverting driver. A logic low on the IN produces gate
drive output. The output is used to turn on an external
N-channel MOSFET.
4.1
Supply
VS (supply) is rated for +4.5V to +18V. External
capacitors are recommended to decouple noise.
4.2
Input
IN (control) is a TTL-compatible input. IN must be
forced high or low by an external signal. A floating input
will cause unpredictable operation.
A high input turns on Q1, which sinks the output of the
0.1 mA and the 0.3 mA current source, forcing the input
of the first inverter low.
4.3
Hysteresis
The control threshold voltage, when IN is rising, is
slightly higher than the control threshold voltage when
CTL is falling.
When IN is low, Q2 is on, which applies the additional
0.3 mA current source to Q1. Forcing IN high turns on
Q1 which must sink 0.4 mA from the two current
sources. The higher current through Q1 causes a
larger drain-to-source voltage drop across Q1. A
slightly higher control voltage is required to pull the
input of the first inverter down to its threshold.
Q2 turns off after the first inverter output goes high.
This reduces the current through Q1 to 0.1 mA. The
lower current reduces the drain-to-source voltage drop
across Q1. A slightly lower control voltage will pull the
input of the first inverter up to its threshold.
4.4
Drivers
The second (optional) inverter permits the driver to be
manufactured in inverting and non-inverting versions.
The last inverter functions as a driver for the output
MOSFETs Q3 and Q4.
4.5
Output
OUT is designed to drive a capacitive load. VOUT
(output voltage) is either approximately the supply
voltage or approximately ground, depending on the
logic state applied to IN.
If IN is high, and VS (supply) drops to zero, the output
will be floating (unpredictable).
DS20006511A-page 10
2021 Microchip Technology Inc.
MIC4421A/22A
5.0
APPLICATION INFORMATION
5.1
Supply Bypassing
Charging and discharging large capacitive loads
quickly requires large currents. For example, charging
a 10,000 pF load to 18V in 50 ns requires 3.6A.
The MIC4421A/22A has double bonding on the supply
pins, the ground pins, and output pins. This reduces
parasitic lead inductance. Low inductance enables
large currents to be switched rapidly. It also reduces
internal ringing that can cause voltage breakdown
when the driver is operated at or near the maximum
rated voltage.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal
because it is referenced to the same ground.
VIN +18V
WIMA
MKS-2
1μF
+5.0V
1
8
MIC4421A
0V
5
0.1μF
4
LOGIC
GROUND
0.1μF
0V
2500pF
POLYCARBONATE
PC TRACE
5(6,67$1&(
FIGURE 5-1:
Switching Time Due to
Negative Feedback.
TABLE 5-1:
MIC4421A MAX. OPERATING
FREQUENCY
VS
Maximum Frequency
18V
220 kHz
15V
300 kHz
10V
640 kHz
5V
2 MHz
Conditions: JA = 150°C/W, TA = 25°C,
CL = 10,000 pF.
To guarantee low supply impedance over a wide
frequency range, a parallel capacitor combination is
recommended for supply bypassing. Low inductance
ceramic disk capacitor with short lead lengths
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