MIC4424YN

MIC4423/4/5 Dual 3A Peak Low-Side MOSFET Drivers Features General Description • Reliable, Low-Power Bipolar/CMOS/DMOS Construction • Latch-Up Protected to >500 mA Reverse Current • Logic Input withstands Swing to –5V • High 3A Peak Output Current • Wide 4.5V to 18V Operating Range • Drives 1800 pF Capacitance in 25 ns • Short 500 — — mA — High Output Voltage VOH Low Output Voltage VOL Output Resistance HI State RO Output Resistance LO State Peak Output Resistance Latch-Up Protection Withstand Reverse Current  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 3 MIC4423/4/5 Electrical Characteristics: 4.5V ≤ VS ≤ 18V; TA = +25°C, Bold values indicate –40°C ≤ TA ≤ +85°C; unless otherwise specified. Specifications for packaged product only. Parameter Symbol Min. Typ. Max. Units Conditions Switching Time (Switching times guaranteed by design) Rise Time tR Fall time tF tD1 Delay Time tD2 Pulse Width Power Supply Power Supply Current DS20006638A-page 4 tPW IS — 23 35 — 28 60 — 25 35 — 32 60 — 33 75 — 32 100 — 38 75 — 38 100 400 — — — ns Figure 1-1, CL = 1800 pF ns Figure 1-1, CL = 1800 pF ns Figure 1-1, CL = 1800 pF ns Figure 1-1, CL = 1800 pF — ns Figure 1-1 — 2.5 3.5 mA VIN = 3.0V (both inputs) — 0.25 0.3 mA VIN = 0.0V (both inputs)  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 TEMPERATURE SPECIFICATIONS (Note 1) Parameters Sym. Min. Typ. Max. Units Conditions Storage Temperature Range TS –65 — +150 °C — Lead Temperature TA — — +300 °C — Thermal Resistance DIP JA — 130 — — Thermal Resistance DIP JC — 42 — — Thermal Resistance Wide-SOIC JA — 120 — Thermal Resistance Wide-SOIC JC — 75 — Thermal Resistance SOIC JA — 120 — — Thermal Resistance SOIC JC — 75 — — Temperature Ranges Package Thermal Resistances Note 1: °C/W — — The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Test Circuit VS = 18V INPUT 5V 90% 2.5V tP W • 0.5μs 10% 0V VS 90% tD1 tP W tF tD2 tR 0.1μF INA OUTA A MIC4423 OUTPUT INB B 1800pF OUTB 1800pF 10% 0V FIGURE 1-1: 4.7μF Inverting Driver Switching Time. VS = 18V INPUT 5V 90% 2.5V tP W • 0.5μs 10% 0V VS 90% tD1 tP W tR tD2 tF INA A MIC4424 OUTPUT INB B 4.7μF OUTA 1800pF OUTB 1800pF 10% 0V FIGURE 1-2: 0.1μF Non-Inverting Driver Switching Time.  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 5 MIC4423/4/5 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 100 100 4700pF 80 80 3300pF 60 TFALL (ns) TRISE (ns) 1800pF 1000pF 2200pF 40 5V 60 12V 40 18V 20 20 470pF 0 4 6 8 FIGURE 2-1: Voltage. 10 12 14 VSUPPLY (V) 16 18 Rise Time vs. Supply 0 100 FIGURE 2-4: Load. VS = 18V CLOAD = 1800pF 4700pF 80 30 TFALL (ns) 3300pF 60 1000pF 20 2200pF 40 TF TIME (ns) 1800pF 10000 Fall Time vs. Capacitive 40 100 1000 CLOAD (pF) T R 10 20 470pF 0 4 6 FIGURE 2-2: Voltage. 8 10 12 14 VSUPPLY (V) 16 0 -75 -30 15 60 105 150 -81&7,217(03(5$785(Û& 18 Fall Time vs. Supply FIGURE 2-5: Temperature. 100 50 5V 12V 40 20 0 100 FIGURE 2-3: Load. DS20006638A-page 6 TD2 30 TD1 20 10 18V 1000 CLOAD (pF) VS = 18V CLOAD = 1800pF 40 T (ns) TRISE (ns) 80 60 Rise and Fall Time vs. 10000 Rise Time vs. Capacitive 0 FIGURE 2-6: Amplitude. 0 2 4 6 8 INPUT (V) 10 12 Propagation Delay vs. Input  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 Supply Current vs. ISUPPLY (mA) 100 VSUPPLY = 18V 90 80 10000pF 70 60 50 1000pF 3300pF 40 100pF 30 20 10 0 10 100 1000 FREQUENCY (kHz) FIGURE 2-8: Frequency. Supply Current vs. ISUPPLY (mA) 100 V = 12V 90 SUPPLY 80 2MHz 70 60 500kHz 50 40 30 20kHz 20 100kHz 10 0 100 1000 10000 CLOAD (pF) FIGURE 2-9: Capacitive Load. Supply Current vs.  2022 Microchip Technology Inc. and its subsidiaries ISUPPLY (mA) FIGURE 2-10: Frequency. Supply Current vs. 100 V = 5V 90 SUPPLY 80 70 60 2MHz 50 40 30 100kHz 500kHz 20 10 0 100 1000 10000 CLOAD (pF) ISUPPLY (mA) FIGURE 2-7: Capacitive Load. 100 VSUPPLY = 12V 90 80 10000pF 70 60 50 1000pF 40 100pF 3300pF 30 20 10 0 10 100 1000 FREQUENCY (kHz) FIGURE 2-11: Capacitive Load. Supply Current vs. 100 VSUPPLY = 5V 90 80 10000pF 70 4700pF 60 50 2200pF 40 1000pF 30 100pF 20 10 0 10 100 1000 FREQUENCY (kHz) ISUPPLY (mA) ISUPPLY (mA) 100 VSUPPLY = 18V 90 80 70 60 500kHz 50 40 20kHz 30 100kHz 20 10 0 100 1000 10000 CLOAD (pF) FIGURE 2-12: Frequency. Supply Current vs. DS20006638A-page 7 MIC4423/4/5 60 1.4 CLOAD = 2200 pF 1.2 IQUIESCENT (mA) 50 40 T (ns) TD2 30 TD1 20 10 0 1.0 INPUTS = 1 0.8 0.6 0.4 INPUTS = 0 0.2 4 6 FIGURE 2-13: Voltage. 60 8 10 12 14 VSUPPLY (V) 16 0 -55 18 Delay Time vs. Supply -25 5 35 65 95 7(03(5$785(Û& FIGURE 2-16: Temperature. 125 Quiescent Current vs. 6 &LOAD = 2200 pF 5 RDS(ON) (Ÿ) 50 40 T (ns) TD2 30 TD1 20 4 125ÛC 3 25ÛC 2 1 10 0 -55 0 -25 5 35 65 95 7(03(5$785(Û& FIGURE 2-14: Temperature. 125 4 6 8 10 12 14 VSUPPLY (V) 16 18 FIGURE 2-17: Output Resistance (Output High) vs. Supply Voltage. Delay Time vs. 6 10 TJ = 25ÛC 5 BOTH INPUTS = 1 1 RDS(ON) (Ÿ) IQUIESCENT (mA) VS = 10V BOTH INPUTS = 0 0.1 125ÛC 4 25ÛC 3 2 1 0.01 0 4 6 FIGURE 2-15: vs. Voltage. DS20006638A-page 8 8 10 12 14 VSUPPLY (V) 16 18 Quiescent Supply Current 4 6 8 10 12 14 VSUPPLY (V) 16 18 FIGURE 2-18: Output Resistance (Output Low) vs. Supply Voltage.  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number DIP, SOIC Pin Number Wide SOIC Pin Name 2, 4 2, 7 INA/B Control Input. 3 4, 5 GND Ground: Duplicate pins must be externally connected together. 6 12, 13 VS 7, 5 14, 15, 10, 11 OUTA/B 1, 8 1, 3, 6, 8, 9, 16 NC Description Supply Input: Duplicate pins must be externally connected together. Output: Duplicate pins must be externally connected together. Not connected. Device Configuration MIC4423xN/M MIC4423xWM INA 2 A 7 OUTA INA 2 INB 4 B 5 OUTB INB 7 MIC4424xN/M B 10 OUTB 11 OUTB MIC4423xWM A 7 OUTA INA 2 INB 4 B 5 OUTB INB 7 A 14 OUTA 15 OUTA B 10 OUTB 11 OUTB MIC4423xWM INA 2 A 7 OUTA INA 2 INB 4 B 5 OUTB INB 7  2022 Microchip Technology Inc. and its subsidiaries 14 OUTA 15 OUTA INA 2 MIC4425xN/M A A 14 OUTA 15 OUTA B 10 OUTB 11 OUTB DS20006638A-page 9 MIC4423/4/5 4.0 APPLICATION INFORMATION Although the MIC4423/4/5 drivers have been specifically constructed to operate reliably under any practical circumstances. There are, nonetheless, details of usage that will provide better operation of the device. 4.1 Supply Bypassing Charging and discharging large capacitive loads quickly requires large currents. For example, charging 2000 pF from 0 to 15 volts in 20 ns requires a constant current of 1.5A. In practice, the charging current is not constant, and will usually peak at around 3A. In order to charge the capacitor, the driver must be capable of drawing this much current, this quickly, from the system power supply. In turn, this means that as far as the driver is concerned, the system power supply, as seen by the driver, must have a very low impedance. As a practical matter, this means that the power supply bus must be capacitively bypassed at the driver with at least 100X the load capacitance in order to achieve optimum driving speed. It also implies that the bypassing capacitor must have very low internal inductance and resistance at all frequencies of interest. Generally, this means using two capacitors, one a high-performance low ESR film, the other a low internal resistance ceramic, as together the valleys in their two impedance curves allow adequate performance over a broad enough band to get the job done. Many film capacitors can be sufficiently inductive as to be useless for this service. Likewise, many multilayer ceramic capacitors have unacceptably high internal resistance. Use capacitors intended for high pulse current service. The high pulse current demands of capacitive drivers also mean that the bypass capacitors must be mounted very close to the driver in order to prevent the effects of lead inductance or PCB land inductance from nullifying what you are trying to accomplish. For optimum results the sum of the lengths of the leads and the lands from the capacitor body to the driver body should total 2.5 cm or less. Bypass capacitance, and its close mounting to the driver serves two purposes. Not only does it allow optimum performance from the driver, it minimizes the amount of lead length radiating at high frequency during switching, (due to the large ΔI) thus minimizing the amount of EMI later available for system disruption and subsequent cleanup. It should also be noted that the actual frequency of the EMI produced by a driver is not the clock frequency at which it is driven, but is related to the highest rate of change of current produced during switching, a frequency generally one or two orders of magnitude higher, and thus more difficult to filter if you let it permeate your system. Good bypassing practice is essential for proper operation of high speed driver ICs. DS20006638A-page 10 4.2 Grounding Both proper bypassing and proper grounding are necessary for optimum driver operation. Bypassing capacitance only allows a driver to turn the load ON. Eventually (except in rare circumstances) it is also necessary to turn the load OFF. This requires attention to the ground path. Two things other than the driver affect the rate at which it is possible to turn a load off: The adequacy of the grounding available for the driver, and the inductance of the leads from the driver to the load. The latter will be discussed in a separate section. Best practice for a ground path is obviously a well laid out ground plane. However, this is not always practical, and a poorly-laid out ground plane can be worse than none.Attention to the paths taken by return currents even in a ground plane is essential. In general, the leads from the driver to its load, the driver to the power supply, and the driver to whatever is driving it should all be as low in resistance and inductance as possible. Of the three paths, the ground lead from the driver to the logic driving it is most sensitive to resistance or inductance, and ground current from the load are what is most likely to cause disruption. Thus, these ground paths should be arranged so that they never share a land, or do so for as short a distance as is practical. To illustrate what can happen, consider the following: The inductance of a 2 cm long land, 1.59 mm (0.062") wide on a PCB with no ground plane is approximately 45 nH. Assuming a dl/dt of 0.3 A/ns (which will allow a current of 3A to flow after 10 ns, and is thus slightly slow for our purposes) a voltage of 13.5 volts will develop along this land in response to our postulated ΔI. For a 1 cm land, (approximately 15 nH) 4.5 volts is developed. Either way, anyone using TTL level input signals to the driver will find that the response of their driver has been seriously degraded by a common ground path for input to and output from the driver of the given dimensions. Note that this is before accounting for any resistive drops in the circuit. The resistive drop in a 1.59 mm (0.062") land of 2 oz. Copper carrying 3A will be about 4 mV/cm (10 mV/in) at DC, and the resistance will increase with frequency as skin effect comes into play. The problem is most obvious in inverting drivers where the input and output currents are in phase so that any attempt to raise the driver’s input voltage (in order to turn the driver’s load off) is countered by the voltage developed on the common ground path as the driver attempts to do what it was supposed to. It takes very little common ground path, under these circumstances, to alter circuit operation drastically.  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 4.3 Output Lead Inductance The same descriptions just given for PCB land inductance apply equally well for the output leads from a driver to its load, except that commonly the load is located much further away from the driver than the driver’s ground bus. Generally, the best way to treat the output lead inductance problem, when distances greater than 4 cm (2") are involved, requires treating the output leads as a transmission line. Unfortunately, as both the output impedance of the driver and the input impedance of the MOSFET gate are at least an order of magnitude lower than the impedance of common coax, using coax is seldom a cost-effective solution. A twisted pair works about as well, is generally lower in cost, and allows use of a wider variety of connectors. The second wire of the twisted pair should carry common from as close as possible to the ground pin of the driver directly to the ground terminal of the load. Do not use a twisted pair where the second wire in the pair is the output of the other driver, as this will not provide a complete current path for either driver. Likewise, do not use a twisted triad with two outputs and a common return unless both of the loads to be driver are mounted extremely close to each other, and you can guarantee that they will never be switching at the same time. For output leads on a printed circuit, the general rule is to make them as short and as wide as possible. The lands should also be treated as transmission lines: i.e. minimize sharp bends, or narrowings in the land, as these will cause ringing. For a rough estimate, on a 1.59 mm (0.062") thick G-10 PCB a pair of opposing lands each 2.36 mm (0.093") wide translates to a characteristic impedance of about 50Ω. Half that width suffices on a 0.787 mm (0.031") thick board. For accurate impedance matching with a MIC4423/24/25 driver, on a 1.59 mm (0.062") board a land width of 42.75 mm (1.683") would be required, due to the low impedance of the driver and (usually) its load. This is obviously impractical under most circumstances. Generally the trade-off point between lands and wires comes when lands narrower than 3.18 mm (0.125") would be required on a 1.59 mm (0.062") board. To obtain minimum delay between the driver and the load, it is considered best to locate the driver as close as possible to the load (using adequate bypassing). Using matching transformers at both ends of a piece of coax, or several matched lengths of coax between the driver and the load, works in theory, but is not optimum. 4.4 Driving at Controlled Rates Occasionally there are situations where a controlled rise or fall time (which may be considerably longer than the normal rise or fall time of the driver’s output) is desired for a load. In such cases it is still prudent to employ best possible practice in terms of bypassing, grounding and PCB layout, and then reduce the  2022 Microchip Technology Inc. and its subsidiaries switching speed of the load (not the driver) by adding a non-inductive series resistor of appropriate value between the output of the driver and the load. For situations where only rise or only fall should be slowed, the resistor can be paralleled with a fast diode so that switching in the other direction remains fast. Due to the Schmitt trigger action of the driver’s input it is not possible to slow the rate of rise (or fall) of the driver’s input signal to achieve slowing of the output. 4.5 Input Stage The input stage of the MIC4423/24/25 consists of a single-MOSFET class A stage with an input capacitance of ≤38 pF. This capacitance represents the maximum load from the driver that will be seen by its controlling logic. The drain load on the input MOSFET is a –2 mA current source. Thus, the quiescent current drawn by the driver varies, depending on the logic state of the input. Following the input stage is a buffer stage which provides ~400 mV of hysteresis for the input, to prevent oscillations when slowly-changing input signals are used or when noise is present on the input. Input voltage switching threshold is approximately 1.5V which makes the driver directly compatible with TTL signals, or with CMOS powered from any supply voltage between 3V and 15V. The MIC4423/24/25 drivers can also be driven directly by the SG1524/25/26/27, TL494/95, TL594/95, NE5560/61/62/68, TSC170, MIC38C42, and similar switch mode power supply ICs. By relocating the main switch drive function into the driver rather than using the somewhat limited drive capabilities of a PWM IC. The PWM IC runs cooler, which generally improves its performance and longevity, and the main switches switch faster, which reduces switching losses and increase system efficiency. The input protection circuitry of the MIC4423/24/25, in addition to providing 2 kV or more of ESD protection, also works to prevent latch-up or logic upset due to ringing or voltage spiking on the logic input terminal. In most CMOS devices when the logic input rises above the power supply terminal, or descends below the ground terminal, the device can be destroyed or rendered inoperable until the power supply is cycled OFF and ON. The MIC4423/24/25 drivers have been designed to prevent this. Input voltages excursions as great as 5V below ground will not alter the operation of the device. Input excursions above the power supply voltage will result in the excess voltage being conducted to the power supply terminal of the IC. Because the excess voltage is simply conducted to the power terminal, if the input to the driver is left in a high state when the power supply to the driver is turned off, currents as high as 30 mA can be conducted through the driver from the input terminal to its power supply terminal. This may overload the output of whatever is DS20006638A-page 11 MIC4423/4/5 driving the driver, and may cause other devices that share the driver’s power supply, as well as the driver, to operate when they are assumed to be off, but it will not harm the driver itself. Excessive input voltage will also slow the driver down, and result in much longer internal propagation delays within the drivers. TD2, for example, may increase to several hundred nanoseconds. In general, while the driver will accept this sort of misuse without damage, proper termination of the line feeding the driver so that line spiking and ringing are minimized, will always result in faster and more reliable operation of the device, leave less EMI to be filtered elsewhere, be less stressful to other components in the circuit, and leave less chance of unintended modes of operation. 4.6 Power Dissipation CMOS circuits usually permit the user to ignore power dissipation. Logic families such as 4000 series and 74Cxxx have outputs which can only source or sink a few milliamps of current, and even shorting the output of the device to ground or VCC may not damage the device. CMOS drivers, on the other driver hand, are intended to source or sink several Amps of current. This is necessary in order to drive large capacitive loads at frequencies into the megahertz range. Package power dissipation of driver ICs can easily be exceeded when driving large loads at high frequencies. Care must therefore be paid to device dissipation when operating in this domain. 4.7 Resistive Load Power Dissipation Dissipation caused by a resistive load can be calculated in the following Equation 4-1: EQUATION 4-1: 2 PL = I  R  DO Where: I= The current drawn by the load RO = The output resistance of the driver when the output is high, at the power supply voltage used (See Section 2.0 “Typical Performance Curves”) D= Fraction of time the load is conducting (duty cycle) 4.8 Capacitive Load Power Dissipation Dissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described in the following Equation 4-2: EQUATION 4-2: The Supply Current vs Frequency and Supply Current vs Load in the Section 2.0 “Typical Performance Curves” furnished with this data sheet aid in estimating power dissipation in the driver. Operating frequency, power supply voltage, and load all affect power dissipation. E = 12CV Given the power dissipation in the device, and the thermal resistance of the package, junction operating temperature for any ambient is easy to calculate. For example, the thermal resistance of the 8-pin plastic DIP package, from the data sheet, is 150°C/W. In a 25°C ambient, then, using a maximum junction temperature of 150°C, this package will dissipate 960 mW. As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage in the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capacitive load. Accurate power dissipation numbers can be obtained by summing the three sources of power dissipation in the device: • Load power dissipation (PL) • Quiescent power dissipation (PQ) • Transition power dissipation (PT) Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive. 2 EQUATION 4-3: PL = f  C  VS  2 Where: f= Operating frequency C= Load capacitance VS = Driver supply voltage DS20006638A-page 12  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 4.9 Inductive Load Power Dissipation For inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case: EQUATION 4-4: 2 P L1 = I  R  D O However, in this instance the RO required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described as: EQUATION 4-5: EQUATION 4-7: PQ = VS  D  IH +  1 – D   IL  Where: IH = Quiescent current with input high IL = Quiescent current with input low D= Fraction of time input is high (duty cycle) VS = Power supply voltage 4.11 Transition Power Dissipation Transition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N-Channel and P-Channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from VS to ground. The transition power dissipation is approximately: EQUATION 4-8: P L2 = I  V D  1 – D  Where: VD = PT = f  VS  A  s  The forward drop of the clamp diode in the driver (generally around 0.7V). Where: (A x s) = The two parts of the load dissipation must be summed in to produce PL. EQUATION 4-6: is a time current factor derived from Figure 4-1 Total power (PD) then, is described as: EQUATION 4-9: P L = P L1 + P L2 PD = PL + PQ + PT 4.10 Quiescent Power Dissipation Quiescent power dissipation (PQ, as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤0.2 mA; a logic high will result in a current drain of ≤2.0 mA. Quiescent power can therefore be found from:  2022 Microchip Technology Inc. and its subsidiaries Examples show the relative magnitude for each term. DS20006638A-page 13 MIC4423/4/5 EXAMPLE 1: The MIC4423 operating on a 12V supply driving two capacitive loads of 3000 pF each, operating at 250 kHz, with a duty cycle of 50%, in a maximum ambient of 60°C. EXAMPLE 2: A MIC4424 operating on a 15V input, with one driver driving a 50Ω resistive load at 1 MHz, with a duty cycle of 67%, and the other driver quiescent, in a maximum ambient temperature of 40°C: First, calculate load power loss: 2 PL = I  RO  D PL = f  C   VS  9 2 9 First, IO must be determined. 2 P L = 250 000   3  10 + 3  10   12 = 0.2160W EQUATION 4-10: Then, transition power loss: PT = f  VS   A  s  = 250 000  12  2.2  10 = 6.6mW I O = V S   R O + R LOAD  Given RO from the characteristic curves then: I O = 15   3.3 + 50  Then quiescent power loss: PQ = VS  D  IH +  1 – D   IL  = 12    0.5  0.0035  +  0.5  0.0003   = 0.0228W I O = 0.281A and: Total power dissipation, then, is: 2 P L =  0.281   3.3  0.67 = 0.174W PT = F  VS   A  s   2 P D = 0.2160 + 0.0066 + 0.0228 = 0.2454W Assuming an SOIC package, with JA of 120°C/W, this will result in the junction running at 29.4°C above ambient. 0.2454  120 = 29.4C Given a maximum ambient temperature of 60°C, this will result in a maximum junction temperature of 89.4°C. because only one side is operating, –9 =  1 000 000  15  3.3  10   2 = 0.025W and P Q = 15    0.67  0.00125  +  0.33  0.000125  +  1  0.000125   this assumes that the unused side of the driver has its input grounded, which is more efficient = 0.015W. Then, P D = 0.174 + 0.025 + 0.0150 = 0.213W In a ceramic package with an JA of 100°C/W, this amount of power results in a junction temperature given the maximum 40°C ambient of:  0.213  100  + 40 = 61.4C DS20006638A-page 14  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 4.12 Definitions CL = Load Capacitance in Farads. D = Duty Cycle expressed as the fraction of time the input to the driver is high. f = Operating Frequency of the driver in Hertz. IH = Power supply current drawn by a driver when both inputs are high and neither output is loaded. IL = Power supply current drawn by a driver when both 10-8 A•s (Ampere-seconds) The actual junction temperature will be lower than calculated both because duty cycle is less than 100% and because the graph lists RDS(ON) at a TJ of 125°C and the RDS(ON) at 61°C TJ will be somewhat lower. 10-9 10-10 0 2 FIGURE 4-1: 4 6 8 10 12 14 16 18 VIN Crossover Energy Loss. inputs are low and neither output is loaded. PD = Total power dissipated in a driver in Watts. PL = Power dissipated in the driver due to the driver’s load in Watts. PQ = Power dissipated in a quiescent driver in Watts. PT = Power dissipated in a driver when the output changes states (“shoot-through current”) in Watts. NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is stated in the graph on the following page in amperenanoseconds. This figure must be multiplied by the number of repetitions per second (frequency to find Watts). 1250 MAXIMUM PACKAGE POWER DISSIPATION (mW) ID = Output current from a driver in Amps. 1000 SOIC 750 PDIP 500 250 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) FIGURE 4-2: Power Dissipation vs. Ambient Temperature. RO = Output resistance of a driver in Ohms. VS = Power supply voltage to the IC in Volts.  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 15 MIC4423/4/5 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead PDIP* XXX XXXXXX WNNN MIC 4423YN 1930 8-Lead SOIC* Example XXXX XX WNNN 4424 YM 5523 16-Lead Wide SOIC* XXX XXXXXXX WNNN Legend: XX...X Y YY WW NNN e3 * Example Example MIC 4425YWM 8437 Product code or customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. ●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle mark). Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. Package may or may not include the corporate logo. Underbar (_) and/or Overbar (‾) symbol may not be to scale. DS20006638A-page 16  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 8-Lead SOIC Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 17 MIC4423/4/5 8-Lead PDIP Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging. DS20006638A-page 18  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 16-Lead Wide SOIC Package Outline and Recommended Land Pattern Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging.  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 19 MIC4423/4/5 NOTES: DS20006638A-page 20  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 APPENDIX A: REVISION HISTORY Revision A (May 2022) • Converted Micrel document MIC4423/4/5 to Microchip data sheet DS20006638A. • Minor text changes throughout.  2022 Microchip Technology Inc. and its subsidiaries DS20006638A-page 21 MIC4423/4/5 NOTES: DS20006638A-page 22  2022 Microchip Technology Inc. and its subsidiaries MIC4423/4/5 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. X XX –XX Device Junction Temperature Range Package Media Type MIC4423: MIC4424: Device: MIC4425: Junction Temperature Range: Package: Media Type: Note 1: Y Z = = Dual 3A Peak Low-Side MOSFET Driver Bi-Polar/CMOS/DMOS Process, Dual Inverting Dual 3A Peak Low-Side MOSFET Driver Bi-Polar/ CMOS/DMOS Process, Dual Non-Inverting Dual 3A Peak Low-Side MOSFET Driver Bi-Polar/CMOS/DMOS Process, Inverting plus Non-Inverting –40°C to +85°C (RoHs Compliant) 0°C to +70°C (RoHs Compliant) N = M = WM = 8-Lead PDIP 8-Lead SOIC 16-Lead SOIC (Wide Body) blank blank blank TR TR 95/Tube (M, SOIC) 50/Tube (N, PDIP) 47/Tube (WM, SOIC) 2,500/Reel (M, SOIC) 1,000/Reel (WM, SOIC) = = = = = Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option.  2022 Microchip Technology Inc. and its subsidiaries Examples: a) MIC4423: 3A Peak, Dual Inverting High Speed, Low-Side MOSFET Driver, Industrial Grade, –40°C to +85°C Temperature Range, RoHS Compliant MIC4423-YM 8-Lead SOIC Package, 95/Tube MIC4423-YM-TR 8-Lead SOIC Package, 2500/Reel MIC4423-YN 8-Lead PDIP Package, 50/Tube MIC4423-YWM 16-Lead SOIC Wide Package, 47/Tube MIC4423-YWM-TR 16-Lead SOIC Wide Package, 1000/Reel b) MIC4423: 3A Peak, Dual Inverting High Speed, Low-Side MOSFET Driver, Commercial Grade, 0°C to +70°C Temperature Range, RoHS Compliant MIC4423-ZN 8-Lead PDIP Package, 50/Tube MIC4423-ZWM 16-Lead SOIC Wide Package, 47/Tube MIC4423-ZWM-TR 16-Lead SOIC Wide Package, 1000/Reel c) MIC4424: 3A Peak, Dual Non-Inverting High Speed, Low-Side MOSFET Driver, Industrial Grade, –40°C to +85°C Temperature Range, RoHS Compliant MIC4424-YM 8-Lead SOIC Package, 95/Tube MIC4424-YM-TR 8-Lead SOIC Package, 2500/Reel MIC4424-YN 8-Lead PDIP Package, 50/Tube MIC4424-YWM 16-Lead SOIC Wide Package, 47/Tube MIC4424-YWM-TR 16-Lead SOIC Wide Package, 1000/Reel d) MIC4424: 3A Peak, Dual Non-Inverting High Speed, Low-Side MOSFET Driver, Commercial Grade, 0°C to +70°C Temperature Range, RoHS Compliant MIC4424-ZN 8-Lead PDIP Package, 50/Tube MIC4424-ZWM 16-Lead SOIC Wide Package, 47/Tube MIC4424-ZWM-TR 16-Lead SOIC Wide Package, 1000/Reel e) MIC4425: 3A-Peak, Dual Inverting Plus NonInverting Hi-Speed, Low-Side MOSFET Driver, Industrial Grade, –40°C to +85°C Temperature Range, RoHS Compliant MIC4425-YM 8-Lead SOIC Package, 95/Tube MIC4425-YM-TR 8-Lead SOIC Package, 2500/Reel MIC4425-YN 8-Lead PDIP Package, 50/Tube MIC4425-YWM 16-Lead SOIC Wide Package, 47/Tube MIC4425-YWM-TR 16-Lead SOIC Wide Package, 1000/Reel f) MIC4425: 3A-Peak, Dual Inverting Plus NonInverting Hi-Speed, Low-Side MOSFET Driver, Commercial Grade, –40°C to +85°C Temperature Range, RoHS Compliant MIC4425-ZWM 16-Lead SOIC Wide Package, 47/Tube MIC4425-ZWM-TR 16-Lead SOIC Wide Package, 1000/Reel DS20006638A-page 23 MIC4423/4/5 NOTES: DS20006638A-page 24  2022 Microchip Technology Inc. and its subsidiaries Note the following details of the code protection feature on Microchip products: • Microchip products meet the specifications contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions. • Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this information in any other manner violates these terms. Information regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. Contact your local Microchip sales office for additional support or, obtain additional support at https:// www.microchip.com/en-us/support/design-help/client-supportservices. THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS". MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION INCLUDING BUT NOT LIMITED TO ANY IMPLIED WARRANTIES OF NONINFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A PARTICULAR PURPOSE, OR WARRANTIES RELATED TO ITS CONDITION, QUALITY, OR PERFORMANCE. IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSEQUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY KIND WHATSOEVER RELATED TO THE INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP FOR THE INFORMATION. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AgileSwitch, APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, QuietWire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, TrueTime, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2022, Microchip Technology Incorporated and its subsidiaries. All Rights Reserved. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.  2022 Microchip Technology Inc. and its subsidiaries ISBN: 978-1-6683-0372-6 DS20006638A-page 25 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Australia - Sydney Tel: 61-2-9868-6733 India - Bangalore Tel: 91-80-3090-4444 China - Beijing Tel: 86-10-8569-7000 India - New Delhi Tel: 91-11-4160-8631 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 China - Chengdu Tel: 86-28-8665-5511 India - Pune Tel: 91-20-4121-0141 China - Chongqing Tel: 86-23-8980-9588 Japan - Osaka Tel: 81-6-6152-7160 China - Dongguan Tel: 86-769-8702-9880 Japan - Tokyo Tel: 81-3-6880- 3770 China - Guangzhou Tel: 86-20-8755-8029 Korea - Daegu Tel: 82-53-744-4301 China - Hangzhou Tel: 86-571-8792-8115 Korea - Seoul Tel: 82-2-554-7200 China - Hong Kong SAR Tel: 852-2943-5100 Malaysia - Kuala Lumpur Tel: 60-3-7651-7906 China - Nanjing Tel: 86-25-8473-2460 Malaysia - Penang Tel: 60-4-227-8870 China - Qingdao Tel: 86-532-8502-7355 Philippines - Manila Tel: 63-2-634-9065 China - Shanghai Tel: 86-21-3326-8000 Singapore Tel: 65-6334-8870 China - Shenyang Tel: 86-24-2334-2829 Taiwan - Hsin Chu Tel: 886-3-577-8366 China - Shenzhen Tel: 86-755-8864-2200 Taiwan - Kaohsiung Tel: 886-7-213-7830 China - Suzhou Tel: 86-186-6233-1526 Taiwan - Taipei Tel: 886-2-2508-8600 China - Wuhan Tel: 86-27-5980-5300 Thailand - Bangkok Tel: 66-2-694-1351 China - Xian Tel: 86-29-8833-7252 Vietnam - Ho Chi Minh Tel: 84-28-5448-2100 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Austin, TX Tel: 512-257-3370 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Novi, MI Tel: 248-848-4000 Houston, TX Tel: 281-894-5983 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 Raleigh, NC Tel: 919-844-7510 New York, NY Tel: 631-435-6000 San Jose, CA Tel: 408-735-9110 Tel: 408-436-4270 Canada - Toronto Tel: 905-695-1980 Fax: 905-695-2078 DS20006638A-page 26 China - Xiamen Tel: 86-592-2388138 China - Zhuhai Tel: 86-756-3210040 Denmark - Copenhagen Tel: 45-4485-5910 Fax: 45-4485-2829 Finland - Espoo Tel: 358-9-4520-820 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany - Garching Tel: 49-8931-9700 Germany - Haan Tel: 49-2129-3766400 Germany - Heilbronn Tel: 49-7131-72400 Germany - Karlsruhe Tel: 49-721-625370 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Germany - Rosenheim Tel: 49-8031-354-560 Israel - Ra’anana Tel: 972-9-744-7705 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Italy - Padova Tel: 39-049-7625286 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Norway - Trondheim Tel: 47-7288-4388 Poland - Warsaw Tel: 48-22-3325737 Romania - Bucharest Tel: 40-21-407-87-50 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Sweden - Gothenberg Tel: 46-31-704-60-40 Sweden - Stockholm Tel: 46-8-5090-4654 UK - Wokingham Tel: 44-118-921-5800 Fax: 44-118-921-5820  2022 Microchip Technology Inc. and its subsidiaries 09/14/21