MIC4426/7/8
Dual 1.5A-Peak Low-Side MOSFET Drivers
Features
General Description
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The MIC4426/4427/4428 family are highly reliable dual
low-side MOSFET drivers fabricated on a
BiCMOS/DMOS process for low power consumption
and high efficiency. These drivers translate TTL or
CMOS input logic levels to output voltage levels that
swing within 25 mV of the positive supply or ground.
Comparable bipolar devices are capable of swinging
only to within 1V of the supply. The MIC4426/7/8 is
available in three configurations: dual inverting, dual
non-inverting, and one inverting plus one non-inverting
output.
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Bipolar/CMOS/DMOS Construction
Latch-Up Protected to >500 mA Reverse Current
1.5A-Peak Output Current
4.5V to 18V Operating Range
Low Quiescent Supply Current
- 4 mA at Logic 1 Input
- 400 μA at Logic 0 Input
Switches 1000 pF in 25 ns
Matched Rise and Fall Times
7Ω Output Impedance
500
—
—
mA
—
18
30
—
20
40
—
15
20
—
29
40
—
17
30
—
19
40
—
23
50
—
27
60
Output
Withstand Reverse Current
Switching Time
Rise Time
tr
Fall Time
tf
Delay Time
tD1
Delay Time
tD2
Note 1:
ns
ns
ns
ns
Test Figure 1-1
—
Test Figure 1-1
—
Test Figure 1-1
—
Test Figure 1-1
—
Specification for packaged product only.
2019 Microchip Technology Inc.
DS20006202A-page 3
MIC4426/7/8
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: 4.5V ≤ VS ≤ 18V; TA = +25°C, bold values valid for full specified temperature range;
unless noted. Note 1
Parameter
Pulse Width
Sym.
Min.
Typ.
Max.
Units
tPW
400
—
—
ns
0.6
1.4
4.5
—
1.5
8
—
0.18
0.4
—
0.19
0.6
Conditions
Test Figure 1-1
Power Supply
Power Supply Current
IS
Power Supply Current
IS
Note 1:
mA
mA
VINA = VINB = 3.0V
—
VINA = VINB = 0V
—
Specification for packaged product only.
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Maximum Junction Temperature
TJ
—
—
+150
°C
—
Storage Temperature Range
TS
–65
—
+150
°C
—
Lead Temperature
—
—
—
+300
°C
10 sec.
Junction Operating Temperature
Range
TJ
0
—
+70
°C
Z option
Junction Operating Temperature
Range
TJ
–40
—
+85
°C
Y option
Thermal Resistance, PDIP 8-Ld
JA
—
130
—
°C/W
—
Thermal Resistance, PDIP 8-Ld
JC
—
42
—
°C/W
—
Thermal Resistance, SOIC 8-Ld
JA
—
120
—
°C/W
—
Thermal Resistance, SOIC 8-Ld
JC
—
75
—
°C/W
—
Thermal Resistance, MSOP 8-Ld
JA
—
250
—
°C/W
—
Package Thermal Resistances
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
DS20006202A-page 4
2019 Microchip Technology Inc.
MIC4426/7/8
Test Circuits
VS = 18V
0.1μF
6
INA
2
7
A
4
OUTA
1000pF
MIC4426
INB
4.7μF
5
B
OUTB
1000pF
INPUT
5V
90%
2.5V
10%
0V
VS
90%
tD1
tP W
tF
tD2
tR
OUTPUT
10%
0V
FIGURE 1-1:
Inverting Driver Switching Time.
VS = 18V
0.1μF
6
INA
2
7
A
4
OUTA
1000pF
MIC4427
INB
5
B
4.7μF
OUTB
1000pF
INPUT
5V
90%
2.5V
10%
0V
VS
90%
tD1
tP W
tR
tD2
tF
OUTPUT
10%
0V
FIGURE 1-2:
Non-Inverting Driver Switching Time.
2019 Microchip Technology Inc.
DS20006202A-page 5
MIC4426/7/8
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
35
70
CL = 1000pF
TA = 25°C
50
25
40
20
30
tR
20
tF
10
5
10
15
SUPPLY VOLTAGE (V)
FIGURE 2-1:
Supply Voltage.
20
Rise and Fall Time vs.
35
10
t D2
20
t D1
15
10
5
0
5
10
15
SUPPLY VOLTAGE (V)
FIGURE 2-2:
Voltage.
FIGURE 2-4:
Temperature.
SUPPLY CURRENT (mA)
25
-75 -50 -25 0 25 50 75 100 125 150
TEMPERATURE (°C)
Delay Time vs.
80
CL = 1000pF
TA = 25°C
30
TIME (ns)
t D1
15
0
0
Delay Time vs. Supply
T A = 25°C
VS = 18V
70
400kHz
60
50
40
30
200
kHz
20kHz
20
10
0
20
10
100
1000
10000
CAPACITIVE LOAD (pF)
FIGURE 2-5:
Capacitive Load.
Supply Current vs.
1k
40
CL = 1000pF
VS = 18V
30
T A = 25°C
VS = 18V
tR
20
tR
100
tF
TIME (ns)
TIME (ns)
t D2
5
0
0
CL = 1000pF
VS = 18V
30
TIME (ns)
TIME (ns)
60
tF
10
10
-75 -50 -25 0 25 50 75 100 125 150
1
10
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
DS20006202A-page 6
Rise and Fall Time vs.
FIGURE 2-6:
Capacitive Load.
100
1000
10000
CAPACITIVE LOAD (pF)
Rise and Fall Time vs.
2019 Microchip Technology Inc.
MIC4426/7/8
2.5
VS = 18V
TA = 25°C
CL = 1000pF
SUPPLY CURRENT (mA)
SUPPLY CURRENT (mA)
30
20
10V
10
5V
2.0
1.5
1.0
0.5
0
0
1
FIGURE 2-7:
Frequency.
10
100
FREQUENCY (kHz)
0
1000
5
Supply Current vs.
20
FIGURE 2-10:
Quiescent Power Supply
Current vs. Supply Voltage.
0.72
10V
0.48
15V
0.24
SUPPLY CURRENT (A)
VC = 5V
0.96
300
200
150
NO LOAD
BOTH INPUTS LOGIC "0"
TA = 25°C
100
0
50
0
0 10 20 30 40 50 60 70 80 90 100
0
5
10
15
SUPPLY VOLTAGE (V)
CURRENT SOURCED (mA)
High Output vs. Current.
20
FIGURE 2-11:
Quiescent Power Supply
Current vs. Supply Voltage.
1.20
VS = 5V
0.96
0.72
10V
0.48
15V
0.24
0
MAXIMUM PACKAGE
POWER DISSIP TION (mW)
1250
TA = 25°C
OUTPUT VOL AGE (V)
15
400
TA = 25°C
FIGURE 2-8:
10
SUPPLY VOLTAGE (V)
1.20
| VS – VOUT | (V)
NO LOAD
BOTH INPUTS LOGIC "1"
TA = 25°C
1000
500
FIGURE 2-9:
Low Output vs. Current.
2019 Microchip Technology Inc.
PDIP
250
0
0 10 20 30 40 50 60 70 80 90 100
CURRENT SUNK (mA)
SOIC
750
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 2-12:
Package Power Dissipation.
DS20006202A-page 7
MIC4426/7/8
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1, 8
NC
Not internally connected.
2
INA
Control Input A: TTL/CMOS compatible logic input.
3
GND
Ground.
4
INB
Control Input B: TTL/CMOS compatible logic input.
5
OUTB
6
VS
7
OUTA
DS20006202A-page 8
Output B: CMOS totem-pole output.
Supply Input: +4.5V to +18V.
Output A: CMOS totem-pole output.
2019 Microchip Technology Inc.
MIC4426/7/8
4.0
APPLICATION INFORMATION
4.5
4.1
Supply Bypassing
Power dissipation caused by continuous load current
(when driving a resistive load) through the driver’s
output resistance is:
Large currents are required to charge and discharge
large capacitive loads quickly. For example, changing a
1000 pF load by 16V in 25 ns requires 0.8A from the
supply input.
To guarantee low supply impedance over a wide
frequency range, parallel capacitors are recommended
for power supply bypassing. Low-inductance ceramic
MLC capacitors with short lead lengths (< 0.5”) should
be used. A 1.0 μF film capacitor in parallel with one or
two 0.1 μF ceramic MLC capacitors normally provides
adequate bypassing.
4.2
Grounding
When using the inverting drivers in the MIC4426 or
MIC4428, individual ground returns for the input and
output circuits or a ground plane are recommended for
optimum switching speed. The voltage drop that occurs
between the driver’s ground and the input signal
ground, during normal high-current switching, will
behave as negative feedback and degrade switching
speed.
4.3
Control Input
Unused driver inputs must be connected to logic high
(which can be VS) or ground. For the lowest quiescent
current (
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