MIC4604
85V Half-Bridge MOSFET Driver with up to
16V Programmable Gate Drive
Features
General Description
• 5.5V to 16V Gate Drive Supply Voltage Range
• Drives High-Side and Low-Side N-Channel
MOSFETs with Independent Inputs
• TTL Input Thresholds
• On-Chip Bootstrap Diode
• Fast 39 ns Propagation Times
• Drives 1000 pF Load with 20 ns Rise and Fall
Times
• Low Power Consumption
• Supplies Undervoltage Protection
• –40°C to +125°C Junction Temperature Range
The MIC4604 is an 85V Half-Bridge MOSFET driver.
The MIC4604 features fast 39 ns propagation delay
times and 20 ns driver rise/fall times for a 1 nF
capacitive load. The low-side and high-side gate
drivers are independently controlled. The MIC4604 has
TTL input thresholds. It includes a high-voltage internal
diode that helps charge the high-side gate drive
bootstrap capacitor.
Applications
•
•
•
•
•
Power Inverters
High Voltage Step-Down Regulators
Half, Full, and 3-Phase Bridge Motor Drives
Distributed Power Systems
Computing Peripherals
A robust, high-speed, and low-power level shifter
provides clean level transitions to the high-side output.
The robust operation of the MIC4604 ensures that the
outputs are not affected by supply glitches, HS ringing
below ground, or HS slewing with high-speed voltage
transitions. Undervoltage protection is provided on both
the low-side and high-side drivers.
The MIC4604 is available in an 8-pin SOIC package
and a tiny 10-pin 2.5 mm x 2.5 mm TDFN package.
Both packages have an operating junction temperature
range of –40°C to +125°C.
Package Types
MIC4604YM
SOIC-8 (M)
(Top View)
MIC4604YMT
10-Pin TDFN (MT)
(Top View)
VDD 1
VDD 1
10 NC
NC 2
9 LO
HB 3
8 VSS
HO 4
EP
HS 5
2018 Microchip Technology Inc.
8 LO
HB 2
7 VSS
HO 3
6 LI
HS 4
5 HI
7 LI
6 HI
DS20005852A-page 1
MIC4604
Typical Application Circuit
Motor Door Lock Solution
12VDC
1μF
16V
J1
Power
22μF
16V
5.0V
VIN
VOUT
2.2μF
10V
MAQ5283
LDO
12V to 5V
EN
0.1μF
10V
VDD
GND
VDD
I/O
HI
I/O
LI
MIC4604
HB
HO
Half-Bridge
Driver HS
22μF
16V
M
DC Motor
12V 140mA
LO
μC
AQ4882
22μF
16V
22μF
16V
AQ4882
VDD
CANH
HB
CAN BUS
CANL
J2
Communication
VSS
I/O
HI
I/O
LI
MIC4604 HO
Half-Bridge
Driver HS
LO
Functional Block Diagram
HB
HB
UVLO
DRIVER
HO
LEVEL
SHIFT
HI
HS
VDD
UVLO
R
Q
S
Q
DRIVER
LI
LO
VSS
DS20005852A-page 2
2018 Microchip Technology Inc.
MIC4604
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (VDD, VHB – VHS) .............................................................................................................. –0.3V to +18V
Input Voltages (VLI, VHI, VEN) ...........................................................................................................–0.3V to VDD + 0.3V
Voltage on LO (VLO)..........................................................................................................................–0.3V to VDD + 0.3V
Voltage on HO (VHO).................................................................................................................VHS – 0.3V to VHB + 0.3V
Voltage on HS (Continuous) ...................................................................................................................... –0.3V to +90V
Voltage on HB .........................................................................................................................................................+108V
Average Current in VDD to HB Diode ....................................................................................................................100 mA
ESD Rating (Note 1) ...................................................................................................................HBM: 1.5 kV; MM: 200V
Operating Ratings ‡
Supply Voltage (VDD) [Decreasing VDD] .................................................................................................. +5.25V to +16V
Supply Voltage (VDD) [Increasing VDD] ...................................................................................................... +5.5V to +16V
Voltage on HS ............................................................................................................................................ –0.3V to +85V
Voltage on HS (Repetitive Transient) ......................................................................................................... –0.7V to +90V
HS Slew Rate........................................................................................................................................................ 50 V/ns
Voltage on HB ........................................................................................................................... VHS + 4.5V to VHS + 16V
and/or ....................................................................................................................................... VDD – 1V to VDD + 85V
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. Specifications are for packaged product only.
‡ Notice: The device is not guaranteed to function outside its operating ratings.
Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
2018 Microchip Technology Inc.
DS20005852A-page 3
MIC4604
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: VDD = VHB = 12V; VSS = VHS = 0V; No load on LO or HO; TA = +25°C; unless otherwise
noted. Bold values indicate –40°C ≤ TJ ≤ +125°C. Note 1
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
VDD Quiescent Current
IDD
—
48
200
µA
LI = HI = 0V
VDD Operating Current
Supply Current
IDDO
—
136
300
µA
f = 20 kHz
Total HB Quiescent Current
IHB
—
20
75
µA
LI = HI = 0V or LI = 0V and HI = 5V
Total HB Operating Current
IHBO
—
29
200
µA
f = 20 kHz
HB to VSS Quiescent Current
IHBS
—
0.5
5
µA
VHS = VHB = 90V
VIL
—
—
0.8
V
—
High-Level Input Voltage
VIH
2.2
—
—
V
—
Input Voltage Hysteresis
VHYS
—
0.05
—
V
—
RI
100
240
500
kΩ
—
VDD Falling Threshold
VDDF
4.0
4.4
4.9
V
—
VDD Threshold Hysteresis
VDDH
—
0.21
—
V
Rising VDD Threshold; VDDR =
VDDF + VDDH
HB Falling Threshold
VHBF
4.0
4.4
4.9
V
—
HB Threshold Hysteresis
VHBH
—
0.23
—
V
Rising VHB Threshold; VHBR = VHBF
+ VHBH
Low-Current Forward Voltage
VDL
—
0.42
0.70
V
IVDD-HB = 100 µA
High-Current Forward Voltage
VDH
—
0.75
1.0
V
IVDD-HB = 50 mA
Dynamic Resistance
RD
—
2.8
5.0
Ω
IVDD-HB = 50 mA
Low-Level Output Voltage
VOLL
—
0.17
0.4
V
ILO = 50 mA
High-Level Output Voltage
VOHL
—
0.25
1.0
V
ILO = –50 mA, VOHL = VDD – VLO
Peak Sink Current
IOHL
—
1
—
A
VLO = 5V
Peak Source Current
IOLL
—
1
—
A
VLO = 5V
Low-Level Output Voltage
VOLH
—
0.2
0.6
V
IHO = 50 mA
High-Level Output Voltage
VOHH
—
0.22
1.0
V
IHO = –50 mA, VOHH = VHB – VHO
Peak Sink Current
IOHH
—
1.5
—
A
VHO = 5V
Peak Source Current
IOLH
—
1
—
A
VHO = 5V
Input (LI, HI)
Low-Level Input Voltage
Input Pull-Down Resistance
Undervoltage Protection
Bootstrap Diode
LO Gate Driver
HO Gate Driver
Switching Specifications (Note 2)
Lower Turn-Off Propagation
Delay (LI Falling to LO
Falling)
tLPHL
—
37
75
ns
—
Upper Turn-Off Propagation
Delay (HI Falling to HO
Falling)
tHPHL
—
34
75
ns
—
Lower Turn-On Propagation
Delay (LI Rising to LO Rising)
tLPLH
—
39
75
ns
—
Upper Turn-On Propagation
Delay (HI Rising to HO
Rising)
tHPLH
—
33
75
ns
—
DS20005852A-page 4
2018 Microchip Technology Inc.
MIC4604
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VDD = VHB = 12V; VSS = VHS = 0V; No load on LO or HO; TA = +25°C; unless otherwise
noted. Bold values indicate –40°C ≤ TJ ≤ +125°C. Note 1
Parameter
Symbol
Min.
Typ.
Max.
Units
tRC/FC
—
20
—
ns
CL = 1000 pF
Output Rise/Fall Time (3V to
9V)
tR/F
—
0.8
—
µs
CL = 0.1 µF
Minimum Input Pulse Width
that Changes the Output
tPW
—
50
—
ns
—
Bootstrap Diode Turn-On or
Turn-Off Time
tBS
—
10
—
ns
—
Output Rise/Fall Time
Note 1:
2:
Conditions
Specifications are for packaged product only.
Guaranteed by design. Not production tested.
2018 Microchip Technology Inc.
DS20005852A-page 5
MIC4604
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Junction Operating Temperature
Range
TJ
–40
—
+125
°C
—
Storage Temperature Range
TS
–60
—
+150
°C
—
Thermal Resistance TDFN-10Ld
JA
—
75
—
°C/W
—
Thermal Resistance SOIC-8
JA
—
98.9
—
°C/W
—
Temperature Ranges
Package Thermal Resistances
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
Timing Diagrams
LI
HI, LI
tHPLH
tLPLH
tHPLH
tLPLH
HO, LO
Note 1: All propagation delays are measured from
the 50% voltage level.
HI
LO
tMON
tMOFF
HO
DS20005852A-page 6
2018 Microchip Technology Inc.
MIC4604
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-1:
Voltage.
Quiescent Current vs. Input
FIGURE 2-4:
Temperature.
Quiescent Current vs. Input
FIGURE 2-2:
Input Voltage.
VDD Operating Current vs.
FIGURE 2-5:
Temperature.
VDD Operating Current vs.
FIGURE 2-3:
Input Voltage.
VHB Operating Current vs.
FIGURE 2-6:
Temperature.
VHB Operating Current vs.
2018 Microchip Technology Inc.
DS20005852A-page 7
MIC4604
FIGURE 2-7:
Frequency.
VDD Operating Current vs.
FIGURE 2-10:
vs. Temperature.
High Level Output Voltage
FIGURE 2-8:
Frequency.
VHB Operating Current vs.
FIGURE 2-11:
Temperature.
UVLO Thresholds vs.
FIGURE 2-9:
vs. Temperature.
Low Level Output Voltage
FIGURE 2-12:
Temperature.
UVLO Hysteresis vs.
DS20005852A-page 8
2018 Microchip Technology Inc.
MIC4604
FIGURE 2-13:
Voltage.
Propagation Delay vs. Input
FIGURE 2-14:
Temperature.
Propagation Delay vs.
FIGURE 2-15:
Characteristics.
Bootstrap Diode I-V
2018 Microchip Technology Inc.
FIGURE 2-16:
Current.
Bootstrap Diode Reverse
DS20005852A-page 9
MIC4604
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
TDFN
Pin Number
SOIC
Pin Name
1
1
VDD
2, 10
—
NC
No connect.
3
2
HB
High-side bootstrap supply. External bootstrap capacitor is required.
Connect bootstrap capacitor across this pin and HS. Cathode
connection to internal bootstrap diode.
4
3
HO
High-side drive output. Connect to gate of the external high-side power
MOSFET.
5
4
HS
High-side drive reference connection. Connect to source of the external
high-side power MOSFET. Connect this pin to the bootstrap capacitor.
6
5
HI
High-side drive input.
7
6
LI
Low-side drive input.
8
7
VSS
Driver reference supply input. Connected to power ground of external
circuitry and to source of low-side power MOSFET.
9
8
LO
Low-side drive output. Connect to gate of the external low-side power
MOSFET.
EP
—
ePAD
DS20005852A-page 10
Description
Input supply for gate drivers. Decouple this pin to VSS with a >2.2 µF
capacitor. Anode connection to internal bootstrap diode.
Exposed pad. Connect to VSS.
2018 Microchip Technology Inc.
MIC4604
4.0
FUNCTIONAL DESCRIPTION
VDD
The MIC4604 is a high-voltage, non-inverting, dual
MOSFET driver that is designed to independently drive
both high-side and low-side N-Channel MOSFETs (see
the Functional Block Diagram).
Both drivers contain an input buffer with hysteresis, a
UVLO circuit, and an output buffer. The high-side
output buffer includes a high-speed level-shifting circuit
that is referenced to the HS pin. An internal diode is
used as part of a bootstrap circuit to provide the drive
voltage for the high-side output.
4.1
LO
Startup and UVLO
The UVLO circuit forces the driver output low until the
supply voltage exceeds the UVLO threshold. The
low-side UVLO circuit monitors the voltage between
the VDD and VSS pins. The high-side UVLO circuit
monitors the voltage between the HB and HS pins.
Hysteresis in the UVLO circuit prevents noise and finite
circuit impedance from causing chatter during turn-on.
4.2
External FET
Input Stage
Both the HI and LI pins of the MIC4604 are referenced
to the VSS pin. The voltage state of the input signal
does not change the quiescent current draw of the
driver.
The MIC4604 has a TTL-compatible input range and
can be used with input signals with amplitude less than
the supply voltage. The threshold level is independent
of the VDD supply voltage and there is no dependence
between IVDD and the input signal amplitude with the
MIC4604. This feature makes the MIC4604 an
excellent level translator that will drive high-threshold
MOSFETs from a low-voltage PWM IC.
MIC4604
VSS
FIGURE 4-1:
Diagram.
4.4
Low-Side Driver Block
High-Side Driver and Bootstrap
Circuit
A block diagram of the high-side driver and bootstrap
circuit is shown in Figure 4-2. This driver is designed to
drive a floating N-channel MOSFET, whose source
terminal is referenced to the HS pin.
HB
VDD
External FET
CB
HO
4.3
Low-Side Driver
A block diagram of the low-side driver is shown in
Figure 4-1. The low-side driver is designed to drive a
ground (VSS pin) referenced N-channel MOSFET. Low
driver impedances allow the external MOSFET to be
turned on and off quickly. The rail-to-rail drive capability
of the output ensures a low RDS(ON) from the external
MOSFET.
A high level applied to LI pin causes the upper driver
MOSFET to turn on and VDD voltage is applied to the
gate of the external MOSFET. A low level on the LI pin
turns off the upper driver and turns on the low side
driver to ground the gate of the external MOSFET.
MIC4604
HS
FIGURE 4-2:
High-Side Driver and
Bootstrap Circuit Block Diagram.
A low-power, high-speed, level-shifting circuit isolates
the low-side (VSS pin) referenced circuitry from the
high-side (HS pin) referenced driver. Power to the
high-side driver and UVLO circuit is supplied by the
bootstrap circuit while the voltage level of the HS pin is
shifted high.
The bootstrap circuit consists of an internal diode and
external capacitor, CB. In a typical application, such as
the synchronous buck converter shown in Figure 4-3,
the HS pin is at ground potential while the low-side
2018 Microchip Technology Inc.
DS20005852A-page 11
MIC4604
MOSFET is on. The internal diode allows capacitor CB
to charge up to VDD – VF during this time (where VF is
the forward voltage drop of the internal diode). After the
low-side MOSFET is turned off and the HO pin turns
on, the voltage across capacitor CB is applied to the
gate of the upper external MOSFET. As the upper
MOSFET turns on, voltage on the HS pin rises with the
source of the high-side MOSFET until it reaches VIN.
As the HS and HB pin rise, the internal diode is reverse
biased preventing capacitor CB from discharging.
CB
VIN
HB
VDD
CVDD
HI
as much of the discharge battery pack as possible for a
longer run time. For example, an 18V battery pack can
be used to the lowest operating discharge voltage of
13.5V.
Q1
LEVEL
SHIFT
LOUT
HO
VOUT
HS
Q2
LI
COUT
LO
MIC4604
VSS
FIGURE 4-3:
High-Side Driver and
Bootstrap Circuit Block Diagram.
4.5
Programmable Gate Drive
The MIC4604 offers programmable gate drive, which
means the MOSFET gate drive (gate-to-source
voltage) equals the VDD voltage. This feature offers
designers flexibility in driving the MOSFETs. Different
MOSFETs require different VGS characteristics for
optimum RDS(ON) performance. Typically, the higher
the gate voltage (up to 16V), the lower the RDS(ON)
achieved. For example, a 4899 MOSFET can be driven
to the ON state at 4.5V gate voltage but RDS(ON) is
7.5 mΩ. If driven to 10V gate voltage, RDS(ON) is
4.5 mΩ. In low-current applications, the losses due to
RDS(ON) are minimal, but in high-current applications
such as power hand tools, the difference in RDS(ON)
can cut into the efficiency budget.
In portable hand tools and other battery-powered
applications, the MIC4604 offers the ability to drive
motors at a lower voltage compared to the traditional
MOSFET drivers because of the wide VDD range (5.5V
to 16V). Traditional MOSFET drivers typically require a
VDD greater than 9V. The MIC4604 drives a motor
using only two Li-ion batteries (total 7.2V) compared to
traditional MOSFET drivers which will require at least
three cells (total of 10.8V) to exceed the minimal VDD
range. As an additional benefit, the low 5.5V gate drive
capability allows a longer run time. This is because the
Li-ion battery can run down to 5.5V, which is just above
its 4.8V minimum recommended discharge voltage.
This is also a benefit in higher current power tools that
use five or six cells. The driver can be operated up to
16V to minimize the RDS(ON) of the MOSFETs and use
DS20005852A-page 12
2018 Microchip Technology Inc.
MIC4604
5.0
APPLICATION INFORMATION
5.2
5.1
HS Pin Clamp
Power dissipation in the driver can be separated into
three areas:
A resistor/diode clamp between the switch node and
the HS pin is necessary to clamp large negative
glitches or pulses on the HS pin.
Figure 5-1 shows the Phase A section high-side and
low-side MOSFETs connected to one phase of the
three phase motor. There is a brief period of time (dead
time) between switching to prevent both MOSFETs
from being on at the same time. When the high-side
MOSFET is conducting during the on-time state,
current flows into the motor. After the high-side
MOSFET turns off—but before the low-side MOSFET
turns on—current from the motor flows through the
body diode in parallel with the low-side MOSFET.
Depending upon the turn-on time of the body diode, the
motor current, and circuit parasitics, the initial negative
voltage on the switch node can be several volts or
more. The forward voltage drop of the body diode can
be several volts, depending on the body diode
characteristics and motor current.
Even though the HS pin is rated for negative voltage, it
is good practice to clamp the negative voltage on the
HS pin with a resistor and possibly a diode to prevent
excessive negative voltage from damaging the driver.
Depending upon the application and amount of
negative voltage on the switch node, a 3Ω resistor is
recommended. If the HS pin voltage exceeds 0.7V, a
diode between the HS pin and ground is
recommended. The diode reverse voltage r
ating must be greater than the high voltage input supply
(VIN). Larger values of resistance can be used if
necessary.
Adding a series resistor in the switch node limits the
peak high-side driver current during turn-off, which
affects the switching speed of the high-side driver. The
resistor in series with the HO pin may be reduced to
help compensate for the extra HS pin resistance.
Power Dissipation Considerations
• Internal diode dissipation in the bootstrap circuit
• Internal driver dissipation
• Quiescent current dissipation used to supply the
internal logic and control functions.
5.3
Bootstrap Circuit Power
Dissipation
Power dissipation of the internal bootstrap diode
primarily comes from the average charging current of
the CB capacitor multiplied by the forward voltage drop
of the diode. Secondary sources of diode power
dissipation are the reverse leakage current and reverse
recovery effects of the diode.
The average current drawn by repeated charging of the
high-side MOSFET is calculated by:
EQUATION 5-1:
I F AVE = Q GATE f S
Where:
QGATE Total gate charge at VHB
fS
Gate drive switching frequency
The average power dissipated by the forward voltage
drop of the diode equals:
EQUATION 5-2:
P DIODEfwd = I F AVE V F
Where:
VF
VIN
Diode forward voltage drop
CB
HB
VDD
DBST
CVDD
HI
Level
Shift
HO
RG
HS
RHS
ȍ
DCLAMP
VNEG
M
LO
LI
RG
MIC4604
VSS
FIGURE 5-1:
Negative HS Pin Voltage.
2018 Microchip Technology Inc.
The value of VF should be taken at the peak current
through the diode; however, this current is difficult to
calculate because of differences in source
impedances. The peak current can either be measured
or the value of VF at the average current can be used,
which will yield a good approximation of diode power
dissipation.
The reverse leakage current of the internal bootstrap
diode is typically 2 µA at a reverse voltage of 85V at
125°C. Power dissipation due to reverse leakage is
typically much less than 1 mW and can be ignored.
DS20005852A-page 13
MIC4604
Reverse recovery time is the time required for the
injected minority carriers to be swept away from the
depletion region during turn-off of the diode. Power
dissipation due to reverse recovery can be calculated
by computing the average reverse current due to
reverse recovery charge times the reverse voltage
across the diode. The average reverse current and
power dissipation due to reverse recovery can be
estimated by:
EQUATION 5-6:
P DIODErev = I R V REV 1 – D
Where:
IR
EQUATION 5-3:
I RR AVE = 0.5 I RRM t RR f S
Where:
IRRM
tRR
Reverse current flow at VREV and TJ
VREV
Diode reverse voltage
D
Duty cycle. (tON × fS)
The on-time is the time the high-side switch is
conducting. In most topologies, the diode is reverse
biased during the switching cycle off-time.
Peak reverse recovery current
EXTERNAL
DIODE
Reverse recovery time
CB
EQUATION 5-4:
P DIODErr = I RR AVE V REV
HB
VDD
HI
VIN
LEVEL
SHIFT
HO
HS
The total diode power dissipation is:
LI
EQUATION 5-5:
LO
MIC4604
VSS
P DIODEtotal = P DIODEfwd + P DIODErr
FIGURE 5-2:
An optional external bootstrap diode may be used
instead of the internal diode (Figure 5-2). An external
diode may be useful if high gate charge MOSFETs are
being driven and the power dissipation of the internal
diode is contributing to excessive die temperatures.
The voltage drop of the external diode must be less
than the internal diode for this option to work. The
reverse voltage across the diode will be equal to the
input voltage minus the VDD supply voltage. The above
equations can be used to calculate power dissipation in
the external diode; however, if the external diode has
significant reverse leakage current, the power
dissipated in that diode due to reverse leakage can be
calculated as:
DS20005852A-page 14
5.4
Optional Bootstrap Diode.
Gate Driver Power Dissipation
Power dissipation in the output driver stage is mainly
caused by charging and discharging the gate to source
and gate to drain capacitance of the external MOSFET.
Figure 5-3 shows a simplified equivalent circuit of the
MIC4604 driving an external MOSFET.
2018 Microchip Technology Inc.
EXTERNAL FET
HB
VDD
CGD
RON
CB
HO
RG
ROFF
RG_FET
CGS
MIC4604
HS
VGS - Gate-to-Source Voltage (V)
MIC4604
10
8
6
4
2
0
0
FIGURE 5-3:
MIC4604 Driving an
External MOSFET.
5.4.1
DISSIPATION DURING THE
EXTERNAL MOSFET TURN-ON
Energy from capacitor CB is used to charge up the input
capacitance of the MOSFET (CGD and CGS). The
energy delivered to the MOSFET is dissipated in the
three resistive components, RON, RG, and RG_FET. RON
is the on resistance of the upper driver MOSFET in the
MIC4604. RG is the series resistor (if any) between the
driver IC and the MOSFET. RG_FET is the gate
resistance of the MOSFET. RG_FET is usually listed in
the power MOSFET’s specifications. The ESR of
capacitor CB and the resistance of the connecting etch
can be ignored because they are much less than RON
and RG_FET.
The effective capacitances of CGD and CGS are difficult
to calculate because they vary non-linearly with ID,
VGS, and VDS. Fortunately, most power MOSFET
specifications include a typical graph of total gate
charge versus VGS. Figure 5-4 shows a typical gate
charge curve for an arbitrary power MOSFET. This
chart shows that for a gate voltage of 10V, the
MOSFET requires about 23.5 nC of charge. The
energy dissipated by the resistive components of the
gate drive circuit during turn-on is calculated as:
but
2
1
E = --- C ISS V GS
2
Q = CV
so
10
15
20
25
FIGURE 5-4:
VGS.
Typical Gate Charge vs.
The same energy is dissipated by ROFF, RG, and
RG_FET when the driver IC turns the MOSFET off.
Assuming RON is approximately equal to ROFF, the total
energy and power dissipated by the resistive drive
elements is:
EQUATION 5-8:
E DRIVER = Q G V GS
and
P DRIVER = Q G V GS f S
Where:
EDRIVER
Energy dissipated per switching cycle
PDRIVER
Power dissipated per switching cycle
QG
Total gate charge at VGS
VGS
Gate-to-source voltage on the
MOSFET
Switching frequency of the gate drive
circuit
The power dissipated inside the MIC4604 is equal to
the ratio of RON and ROFF to the external resistive
losses in RG and RG_FET. Letting RON = ROFF, the
power dissipated in the MIC4604 due to driving the
external MOSFET is:
EQUATION 5-9:
1
E = --- Q G V GS
2
Where:
CISS
5
Qg - Total Gate Charge (nC)
fS
EQUATION 5-7:
VDS = 50V
ID = 6.9A
Total gate capacitance of the MOSFET
2018 Microchip Technology Inc.
R ON
P DISSdriver = P DRIVER ------------------------------------------------R ON + R G + R G_FET
DS20005852A-page 15
MIC4604
5.5
Supply Current Power Dissipation
Power is dissipated in the MIC4604 even if nothing is
being driven. The supply current is drawn by the bias
for the internal circuitry, the level shifting circuitry, and
shoot-through current in the output drivers. The supply
current is proportional to operating frequency and the
VDD and VHB voltages. The typical characteristic
graphs show how supply current varies with switching
frequency and supply voltage.
The power dissipated by the MIC4604 due to supply
current is:
EQUATION 5-10:
P DISSsupply = V DD I DD + V HB I HB
5.6
Total Power Dissipation and
Thermal Considerations
Total power dissipation in the MIC4604 is equal to the
power dissipation caused by driving the external
MOSFETs, the supply current and the internal
bootstrap diode.
EQUATION 5-11:
P DISStotal = P DISSsupply + P DISSdrive + P DIODEtotal
The die temperature can be calculated after the total
power dissipation is known.
EQUATION 5-12:
T J = T A + P DISStotal JA
Where:
TJ
Junction temperature (°C)
TA
Maximum ambient temperature
PDISStotal
θJA
Power dissipation of the MIC4604
Thermal resistance from junction to
ambient air
5.7
Propagation Delay and Other
Timing Considerations
Propagation delay and signal timing are important
considerations. Many power supply topologies use two
switching MOSFETs operating 180° out of phase from
each other. These MOSFETs must not be on at the
same time or a short circuit will occur, causing high
peak currents and higher power dissipation in the
MOSFETs. The MIC4604 output gate drivers are not
designed with anti-shoot-through protection circuitry.
The output drive signals simply follow the inputs. The
power supply design must include timing delays
(dead-time) between the input signals to prevent
shoot-through.
Make sure the input signal pulse width is greater than
the minimum specified pulse width. An input signal that
is less than the minimum pulse width may result in no
output pulse or an output pulse whose width is
significantly less than the input.
The maximum duty cycle (ratio of high side on-time to
switching period) is controlled by the minimum pulse
width of the low side and by the time required for the CB
capacitor to charge during the off-time. Adequate time
must be allowed for the CB capacitor to charge up
before the high-side driver is turned on.
5.8
Decoupling and Bootstrap
Capacitor Selection
Decoupling capacitors are required for both the
low-side (VDD) and high-side (HB) supply pins. These
capacitors supply the charge necessary to drive the
external MOSFETs and also minimize the voltage
ripple on these pins. The capacitor from HB to HS has
two functions: it provides decoupling for the high-side
circuitry and also provides current to the high-side
circuit while the high-side external MOSFET is on.
Ceramic capacitors are recommended because of their
low impedance and small size. Z5U type ceramic
capacitor dielectrics are not recommended because of
the large change in capacitance over temperature and
voltage. A minimum value of 0.1 µF is required for each
of the capacitors, regardless of the MOSFETs being
driven. Larger MOSFETs may require larger
capacitance values for proper operation. The voltage
rating of the capacitors depends on the supply voltage,
ambient temperature and the voltage derating used for
reliability. 25V rated X5R or X7R ceramic capacitors
are recommended for most applications. The minimum
capacitance value should be increased if low voltage
capacitors are used because even good quality
dielectric capacitors, such as X5R, will lose 40% to
70% of their capacitance value at the rated voltage.
Placement of the decoupling capacitors is critical. The
bypass capacitor for VDD should be placed as close as
possible between the VDD and VSS pins. The bypass
capacitor (CB) for the HB supply pin must be located as
DS20005852A-page 16
2018 Microchip Technology Inc.
MIC4604
close as possible between the HB and HS pins. The
etch connections must be short, wide, and direct. The
use of a ground plane to minimize connection
impedance is recommended. Refer to the section on
Grounding, Component Placement, and Circuit Layout
for more information.
The voltage on the bootstrap capacitor drops each time
it delivers charge to turn on the MOSFET. The voltage
drop depends on the gate charge required by the
MOSFET. Most MOSFET specifications specify gate
charge versus VGS voltage. Based on this information
and a recommended ∆VHB of less than 0.1V, the
minimum value of bootstrap capacitance is calculated
as:
and back to capacitor CB. The high-side circuit return
path usually does not have a low-impedance ground
plane so the etch connections in this critical path
should be short and wide to minimize parasitic
inductance. As with the low-side circuit, impedance
between the MOSFET source and the decoupling
capacitor causes negative voltage feedback that fights
the turn-on of the MOSFET.
It is important to note that capacitor CB must be placed
close to the HB and HS pins. This capacitor not only
provides all the energy for turn-on but it must also keep
HB pin noise and ripple low for proper operation of the
high-side drive circuitry.
LOW-SIDE DRIVE TURN-ON
CURRENT PATH
EQUATION 5-13:
Q GATE
C B ----------------V HB
GND
PLANE
QGATE Total gate charge at VHB
5.9
Grounding, Component
Placement, and Circuit Layout
Nanosecond switching speeds and ampere peak
currents in and around the MIC4604 drivers require
proper placement and trace routing of all components.
Improper placement may cause degraded noise
immunity, false switching, excessive ringing, or circuit
latch-up.
Figure 5-5 shows the critical current paths when the
driver outputs go high and turn on the external
MOSFETs. It also helps demonstrate the need for a low
impedance ground plane. Charge needed to turn-on
the MOSFET gates comes from the decoupling
capacitors CVDD and CB. Current in the low-side gate
driver flows from CVDD through the internal driver, into
the MOSFET gate, and out the source. The return
connection back to the decoupling capacitor is made
through the ground plane. Any inductance or
resistance in the ground return path causes a voltage
spike or ringing to appear on the source of the
MOSFET. This voltage works against the gate drive
voltage and can either slow down or turn off the
MOSFET during the period when it should be turned
on.
Current in the high-side driver is sourced from
capacitor CB and flows into the HB pin and out the HO
pin, into the gate of the high side MOSFET. The return
path for the current is from the source of the MOSFET
2018 Microchip Technology Inc.
HB
VSS
HO
LI
CB
Voltage drop at the HB pin
The decoupling capacitor for the VDD input may be
calculated in with the same formula; however, the two
capacitors are usually equal in value.
LO
CVDD
Where:
∆VHB
VDD
HS
HIGH-SIDE DRIVE TURN-ON
CURRENT PATH
FIGURE 5-5:
LEVEL
SHIFT
GND
PLANE
HI
MIC4604
Turn-On Current Paths.
Figure 5-6 shows the critical current paths when the
driver outputs go low and turn off the external
MOSFETs. Short, low-impedance connections are
important during turn-off for the same reasons given in
the turn-on explanation. Current flowing through the
internal diode replenishes charge in the bootstrap
capacitor, CB.
LOW-SIDE DRIVE TURN-OFF
CURRENT PATH
LO
VDD
CVDD
HB
VSS
LI
HO
CB
LEVEL
SHIFT
HI
HS
HIGH-SIDE DRIVE TURN-ON
CURRENT PATH
FIGURE 5-6:
5.10
MIC4604
Turn-Off Current Paths.
DC Motor Applications
MIC4604 MOSFET drivers are widely used in DC
motor applications. They address brushed motors in
both half-bridge and full-bridge motor topologies as
well as 3-phase brushless motors. As shown in
Figure 5-7, Figure 5-8, and Figure 5-9, the drivers
DS20005852A-page 17
MIC4604
switch the MOSFETs at variable duty cycles that
modulate the voltage to control motor speed. In the
half-bridge topology, the motor turns in one direction
only. The full-bridge topology allows for bidirectional
control. 3-Phase motors are more efficient compared to
the brushed motors but require three half-bridge
switches and additional circuitry to sense the position
of the rotor.
The MIC4604 85V operating voltage offers the
engineer margin to protect against Back Electromotive
Force (EMF) which is a voltage spike caused by the
rotation of the rotor. The Back EMF voltage amplitude
depends on the speed of the rotation. It is good practice
to have at least twice the HV voltage of the motor
supply. 85V is plenty of margin for 12V, 24V, and 40V
motors.
5V
MIC2290
5V TO 12V
BOOST
MIC5235
LDO
5V to 3.3V
HV
HB
HI
μC
MIC4604 HO
HALF-BRIDGE
DRIVER HS
M
LI
DC MOTOR
LO
FIGURE 5-7:
Half-Bridge DC Motor.
5V
MIC2290
5V TO 12V
BOOST
MIC5235
LDO
5V TO 3.3V
HV
HV
HB
HI
MIC4604 HO
HALF-BRIDGE
DRIVER HS
M
LI
DC MOTOR
LO
μC
HB
HI
MIC4604 HO
HALF-BRIDGE
DRIVER HS
LI
LO
FIGURE 5-8:
DS20005852A-page 18
Full-Bridge DC Motor.
2018 Microchip Technology Inc.
MIC4604
EMF
Position
Sensing
`
Controller
3.3V
MIC4604
MOSFET
Driver
Phase A
MOSFETs
Phase A
MIC4604
MOSFET
Driver
Phase B
MOSFETs
Phase B
MIC4604
MOSFET
Driver
Phase C
MOSFETs
Phase C
MIC5235
LDO
12V
MIC4680
Buck
Regulator
Bridge
Rectifier
Or
PFC
MIC38HC44
Flyback
24V
3-Phase Brushless DC Motor Driver – 24V Block Diagram.
The MIC4604 offers low UVLO threshold and
programmable gate drive, which allows for longer
operation time in battery operated motors such as
power hand tools.
Cross conduction across the half bridge can cause
catastrophic failure in a motor application. Engineers
typically add dead time between states that switch
between high input and low input to ensure that the
low-side MOSFET completely turns off before the
high-side MOSFET turns on and vice versa. The dead
time depends on the MOSFET used in the application,
but 200 ns is typical for most motor applications.
5.11
Power Inverter
Power inverters are used to supply AC loads from a DC
operated battery system, mainly during power failure.
The battery voltage can be 12 VDC, 24 VDC, or up to
36 VDC, depending on the power requirements. There
two popular conversion methods, Type I and Type II,
that convert the battery energy to AC line voltage
(110 VAC or 230 VAC).
2018 Microchip Technology Inc.
BOOST
TRANSFORMER
50Hz GENERATOR
INPUT AC
RECTIFIER
BYPASS PATH
REGULATOR
The MIC4604 is offered in a small 2.5 mm x 2.5 mm
TDFN package for applications that are space
constrained and an SOIC-8 package for ease of
manufacturing. The motor trend is to put the motor
control circuit inside the motor casing, which requires
small packaging because of the size of the motor.
TRANSFORMER
FIGURE 5-9:
AC
OUTPUT AC
POWER SWITCHES FROM
INPUT AC TO DC/AC SUPPLY
DURING POWER OUTAGE
BATTERY
FIGURE 5-10:
Type I Inverter Topology.
As shown in Figure 5-10, Type I is a dual-stage
topology where line voltage is converted to DC through
a transformer to charge the storage batteries. When a
power failure is detected, the stored DC energy is
converted to AC through another transformer to drive
the AC loads connected to the inverter output. This
method is simplest to design, but tends to be bulky and
expensive because it uses two transformers.
Type II is a single-stage topology that uses only one
transformer to charge the bank of batteries to store the
energy. During a power outage, the same transformer
is used to power the line voltage. The Type II switches
at a higher frequency compared to the Type I topology
to maintain a small transformer size.
Both types require a half bridge or full bridge topology
to boost the DC to AC. This application can use two
MIC4604s. The 85V operating voltage offers enough
margin to address all of the available banks of batteries
commonly used in inverter applications. The 85V
operating voltage allows designers to increase the
bank of batteries up to 72V, if desired. The MIC4604
DS20005852A-page 19
MIC4604
can sink as much as 1A, which is enough current to
overcome the MOSFET’s input capacitance and switch
the MOSFET up to 50 kHz. This makes the MIC4604
an ideal solution for inverter applications.
As with all half-bridge and full-bridge topologies, cross
conduction is a concern to inverter manufactures
because it can cause catastrophic failure. This can be
remedied by adding the appropriate dead time between
transitioning from the high-side MOSFET to the
low-side MOSFET and vice versa.
5.12
to minimize loop area and parasitic inductance. The
low-side drive trace LO is routed over the ground plane
to minimize the impedance of that current path. The
decoupling capacitors, CB and CVDD, are placed to
minimize etch length between the capacitors and their
respective pins. This close placement is necessary to
efficiently charge capacitor CB when the HS node is
low. All traces are 0.025 in. wide or greater to reduce
impedance. CIN is used to decouple the high current
path through the MOSFETs.
VIN (FET DRAIN)
Layout Guidelines
Use the following layout guidelines for optimum circuit
performance:
• Place the VDD and HB bypass capacitors close to
the supply and ground pins. It is critical that the
etch length between the high side decoupling
capacitor (CB) and the HB and HS pins be
minimized to reduce lead inductance.
• Use a ground plane to minimize parasitic
inductance and impedance of the return paths.
The MIC4604 is capable of greater than 1A peak
currents and any impedance between the
MIC4604, the decoupling capacitors, and the
external MOSFET will degrade the performance
of the driver.
• Trace out the high di/dt and dv/dt paths, as shown
in Figure 5-11 and Figure 5-12, and minimize etch
length and loop area for these connections.
Minimizing these parameters decreases the
parasitic inductance and the radiated EMI
generated by fast rise and fall times.
HIGH-SIDE FET
LOW-SIDE FET
HS NODE
(SWITCHING NODE)
CIN
CVDD
GND
(FET SOURCE)
MIC4604
LO
VSS
LI
HI
CB
HS
HO
HB
VDD
GND
A typical layout of a synchronous buck converter power
stage (Figure 5-11) is shown in Figure 5-12.
CB
CVDD
HI
VIN
HB
VDD
HIGH-SIDE FET
HO TRACE
HO
LEVEL
SHIFT
HS
LI
HS (SWITCH)
NODE
CIN
LOW-SIDE FET
FIGURE 5-12:
Typical Layout of a
Synchronous Buck Converter Power Stage.
LO
MIC4604
VSS
FIGURE 5-11:
Synchronous Buck
Converter Power Stage.
The high-side MOSFET drain connects to the input
supply voltage (drain) and the source connects to the
switching node. The low-side MOSFET drain connects
to the switching node and its source is connected to
ground. The buck converter output inductor (not
shown) connects to the switching node. The high-side
drive trace, HO, is routed on top of its return trace, HS,
DS20005852A-page 20
2018 Microchip Technology Inc.
MIC4604
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
8-Pin SOIC*
Example
XXXX
4604
YM
WNNN
6987
XX
10-Pin TDFN*
XXX
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Example
463
287
Product code or customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note:
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (⎯) symbol may not be to scale.
2018 Microchip Technology Inc.
DS20005852A-page 21
MIC4604
8-Lead SOIC Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
DS20005852A-page 22
2018 Microchip Technology Inc.
MIC4604
10-Lead TDFN 2.5 mm x 2.5 mm Package Outline and Recommended Land Pattern
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
2018 Microchip Technology Inc.
DS20005852A-page 23
MIC4604
NOTES:
DS20005852A-page 24
2018 Microchip Technology Inc.
MIC4604
APPENDIX A:
REVISION HISTORY
Revision A (January 2018)
• Converted Micrel document MIC4604 to Microchip data sheet DS20005852A.
• Minor text changes throughout.
2018 Microchip Technology Inc.
DS20005852A-page 25
MIC4604
NOTES:
DS20005852A-page 26
2018 Microchip Technology Inc.
MIC4604
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
PART NO.
Examples:
XX
X
–XX
a) MIC4604YM:
Device Temperature Package Media Type
Device:
MIC4604:
=
85V Half-Bridge MOSFET Driver with up to
16V Programmable Gate Drive
Temperature:
Y
Package:
M
=
MT =
Media Type:
= 95/Tube
T5 =
500/Reel
TR =
2,500/Reel
–40°C to +125°C, 8-Lead
SOIC, 95/Tube
b) MIC4604YM-T5:
–40°C to +125°C
8-Lead SOIC
10-Lead 2.5 mm x 2.5 mm TDFN
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
–40°C to +125°C, 8-Lead
SOIC, 500/Reel
c) MIC4604YM-TR:
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
–40°C to +125°C, 8-Lead
SOIC, 2,500/Reel
d) MIC4604YMT:
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
–40°C to +125°C, 10-Lead
2.5 mm x 2.5 mm TDFN,
95/Tube
e) MIC4604YMT-T5:
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
–40°C to +125°C, 10-Lead
2.5 mm x 2.5 mm TDFN,
500/Reel
f) MIC4604YMT-TR:
85V Half-Bridge MOSFET
Driver with up to 16V
Programmable Gate Drive,
–40°C to +125°C, 10-Lead
2.5 mm x 2.5 mm TDFN,
2,500/Reel
Note 1:
2018 Microchip Technology Inc.
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
DS20005852A-page 27
MIC4604
NOTES:
DS20005852A-page 28
2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
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The Microchip name and logo, the Microchip logo, AnyRate, AVR,
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© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-2516-8
== ISO/TS 16949 ==
2018 Microchip Technology Inc.
DS20005852A-page 29
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Tel: 86-25-8473-2460
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Tel: 60-4-227-8870
China - Qingdao
Tel: 86-532-8502-7355
Philippines - Manila
Tel: 63-2-634-9065
China - Shanghai
Tel: 86-21-3326-8000
Singapore
Tel: 65-6334-8870
China - Shenyang
Tel: 86-24-2334-2829
Taiwan - Hsin Chu
Tel: 886-3-577-8366
China - Shenzhen
Tel: 86-755-8864-2200
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Israel - Ra’anana
Tel: 972-9-744-7705
China - Suzhou
Tel: 86-186-6233-1526
Taiwan - Taipei
Tel: 886-2-2508-8600
China - Wuhan
Tel: 86-27-5980-5300
Thailand - Bangkok
Tel: 66-2-694-1351
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China - Xian
Tel: 86-29-8833-7252
Vietnam - Ho Chi Minh
Tel: 84-28-5448-2100
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Austin, TX
Tel: 512-257-3370
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005852A-page 30
China - Xiamen
Tel: 86-592-2388138
China - Zhuhai
Tel: 86-756-3210040
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7289-7561
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
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10/25/17
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