MIC5335-MKYMT-TR

MIC5335 Dual-Channel, High-Performance 300 mA µCap ULDO Features General Description • 2.3V to 5.5V Input Voltage Range • Ultra-Low Dropout Voltage: 75 mV @ 300 mA • Ultra-Small 1.6 mm x 1.6 mm x 0.55 mm 6-Lead Thin DFN Package • Independent Enable Pins • High PSRR (over 65 dB @ 1 kHz) • 300 mA Output Current per LDO • µCap Stable with 1 µF Ceramic Capacitor • Low Quiescent Current: 90 µA/LDO • Fast Turn-On Time: 30 µs • Thermal Shutdown Protection • Current Limit Protection The MIC5335 is a high current density, dual Ultra-Low Dropout (ULDO) linear regulator. The MIC5335 is ideally suited for portable electronics that demand overall high performance in a very small form factor. The MIC5335 is offered in the ultra-small 1.6 mm x 1.6 mm x 0.55 mm 6-lead Thin DFN package, which is only 2.56 mm2 in area. The MIC5335 has an exceptional thermal performance for applications that demand higher power dissipation in a very small footprint. In addition, the MIC5335 integrates two high-performance 300 mA LDOs with independent enable functions and offers high PSRR, eliminating the need for a bypass capacitor. Applications • • • • • • Mobile Phones PDAs GPS Receivers Portable Electronics Portable Media Players Digital Still and Video Cameras  2018 Microchip Technology Inc. The MIC5335 is a µCap design that enables operation with very small output capacitors for stability, thereby reducing required board space and component cost. The MIC5335 is available in fixed-output voltages. Additional voltages are available upon customer request. Package Type MIC5335 TDFN-6 (MT) (Top View) VIN 1 GND 2 EN2 3 EPAD 6 VOUT1 5 VOUT2 4 EN1 DS20006039A-page 1 MIC5335 Typical Application Circuit MIC5335-x.xYMT VIN VOUT1 RX/SYNTH EN1 VOUT2 TX EN2 GND 1μF 1μF 1μF RF Receiver Functional Block Diagram Current Limit 1 VIN EN 1 EN 2 Current Limit 2 VOUT1 LDO1 LDO2 VOUT2 Enable Reference Thermal Shutdown GND DS20006039A-page 2  2018 Microchip Technology Inc. MIC5335 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage (VIN) ......................................................................................................................................... 0V to +6V Enable Input Voltage (VEN) ............................................................................................................................... 0V to +6V Power Dissipation ..................................................................................................................... Internally Limited, Note 1 Lead Temperature (Soldering, 3 sec.)................................................................................................................... +260°C Storage Temperature (TS)...................................................................................................................... –65°C to +150°C ESD Rating (Note 2) .................................................................................................................................................. 2 kV Operating Ratings †† Supply Voltage (VIN) ................................................................................................................................. +2.3V to +5.5V Enable Input Voltage (VEN) .................................................................................................................................0V to VIN Junction Temperature (TJ)...................................................................................................................... –40°C to +125°C Thermal Resistance, TDFN-6 (θJA).....................................................................................................................100°C/W † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. †† Notice: The device is not guaranteed to function outside its operating ratings. Note 1: The maximum allowable power dissipation of any TA (ambient temperature) is PD(MAX) = (TJ(MAX) – TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature and the regulator will go into thermal shutdown. 2: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series with 100 pF. ELECTRICAL CHARACTERISTICS Electrical Characteristics: VIN = EN1 = EN2 = VOUT + 1.0V; higher of the two regulator outputs, IOUTLDO1 = IOUTLDO2 = 100 µA; COUT1 = COUT2 = 1 µF; TJ = +25°C, bold values indicate –40°C ≤ TJ ≤ +125°C, unless noted. Note 1 Parameter Sym. Output Voltage Accuracy Line Regulation — Load Regulation — Dropout Voltage, Note 2 Note 1: 2: VDO Min. Typ. Max. Units –2.0 — 2.0 % Variation from nominal VOUT –3.0 — 3.0 % Variation from nominal VOUT; –40°C to +125°C — 0.02 0.3 — — 0.6 — 0.3 2.0 — 0.1 — — 25 75 — 35 100 — 75 200 %/V % Conditions VIN = VOUT + 1V to 5.5V; IOUT = 100 µA — IOUT = 100 µA to 300 mA IOUT = 100 µA mV IOUT = 100 mA IOUT = 150 mA IOUT = 300 mA Specification for packaged product only. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal VOUT. For outputs below 2.3V, the dropout voltage is the input-to-output differential with the minimum input voltage 2.3V.  2018 Microchip Technology Inc. DS20006039A-page 3 MIC5335 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: VIN = EN1 = EN2 = VOUT + 1.0V; higher of the two regulator outputs, IOUTLDO1 = IOUTLDO2 = 100 µA; COUT1 = COUT2 = 1 µF; TJ = +25°C, bold values indicate –40°C ≤ TJ ≤ +125°C, unless noted. Note 1 Parameter Ground Current Sym. IGND Ground Current in Shutdown ISHDN Ripple Rejection PSRR Current Limit ILIM Output Voltage Noise Min. Typ. Max. — 90 125 — 90 125 — 150 220 — 0.01 2 — 65 — — 45 — 340 550 950 — 90 — — — 0.2 1.1 — — — 0.01 1 — 0.01 1 — 30 100 Units Conditions EN1 = High; EN2 = Low; IOUT = 100 µA to 300 mA µA EN1 = Low; EN2 = High; IOUT = 100 µA to 300 mA EN1 = EN2 = High; IOUT1 = 300 mA, IOUT2 = 300 mA µA dB mA EN1 = EN2 = 0V f = 1 kHz; COUT = 1.0 µF f = 20 kHz; COUT = 1.0 µF VOUT = 0V µVRMS COUT = 1.0 µF; 10 Hz to 100 kHz Enable Inputs (EN1/EN2) Enable Input Voltage VEN Enable Input Current IEN V µA Logic low Logic high VIL ≤ 0.2V VIH ≥ 1.0V Turn-On Time (see Timing Diagram) Turn-On Time (LDO1 and LDO2) Note 1: 2: tON µs COUT = 1.0 µF Specification for packaged product only. Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal VOUT. For outputs below 2.3V, the dropout voltage is the input-to-output differential with the minimum input voltage 2.3V. DS20006039A-page 4  2018 Microchip Technology Inc. MIC5335 TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units TS –65 — +150 °C Conditions Temperature Ranges Storage Temperature Range — Lead Temperature — — — +260 °C Soldering, 3 sec. Junction Temperature Range TJ –40 — +125 °C — JA — 100 — °C/W — Package Thermal Resistances Thermal Resistance, 1.6x1.6 TDFN 6-Ld Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.  2018 Microchip Technology Inc. DS20006039A-page 5 MIC5335 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. FIGURE 2-1: Density. Output Noise Spectral FIGURE 2-4: Temperature. Output Voltage vs. FIGURE 2-2: Current. Dropout Voltage vs. Output FIGURE 2-5: Current. Output Voltage vs. Output FIGURE 2-3: Temperature. Ground Current vs. FIGURE 2-6: Voltage. Output Voltage vs. Input DS20006039A-page 6  2018 Microchip Technology Inc. MIC5335 4V OUTPUT VOLTAGE (50mV/div) INPUT VOLTAGE (2V/div) 5.5V VOUT = 2.8V COUT = 1μF IOUT = 10mA TIME (40μs/div) Dropout Voltage vs. FIGURE 2-10: Line Transient. OUTPUT VOLTAGE (50mV/div) FIGURE 2-7: Temperature. OUTPUT CURRENT (100mA/div) 300mA 1mA VIN = VOUT + 1V VOUT = 2.8V COUT = 1μF TIME (20μs/div) Ground Current vs. Output FIGURE 2-11: Load Transient. OUTPUT VOLTAGE (1V/div) ENABLE (2V/div) FIGURE 2-8: Current. FIGURE 2-9: Current Limit.  2018 Microchip Technology Inc. FIGURE 2-12: VOUT = 3V COUT = 1μF TIME (10μs/div) Enable Turn-On. DS20006039A-page 7 MIC5335 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number Pin Name 1 VIN Supply Input. 2 GND Ground. 3 EN2 LDO2 Enable Active-High Input. Logic High = On; Logic Low = Off; Do not leave floating. 4 EN1 LDO1 Enable Active-High Input. Logic High = On; Logic Low = Off; Do not leave floating. 5 VOUT2 6 VOUT1 EPAD ePad DS20006039A-page 8 Description Regulator Output – LDO2. Regulator Output – LDO1. Exposed heat sink pad connected internally to ground.  2018 Microchip Technology Inc. MIC5335 4.0 APPLICATION INFORMATION 4.1 Enable/Shutdown The MIC5335 comes with dual active-high enable pins that allow each regulator to be enabled independently. Forcing the enable pin low disables the regulator and sends it into a “zero” off-mode current state. In this state, current consumed by the regulator goes nearly to zero. Forcing the enable pin high enables the output voltage. The active-high enable pin uses CMOS technology and the enable pin cannot be left floating; a floating enable pin may cause an indeterminate state on the output. 4.2 Input Capacitor The MIC5335 is a high-performance, high-bandwidth device. Therefore, it requires a well-bypassed input supply for optimal performance. A 1 µF capacitor is required from the input to ground to provide stability. Low-ESR ceramic capacitors provide optimal performance at a minimum of space. Additional high-frequency capacitors, such as small-valued NPO dielectric-type capacitors, help filter out high-frequency noise and are good practice in any RF-based circuit. 4.3 Output Capacitor The MIC5335 requires an output capacitor of 1 µF or greater to maintain stability. The design is optimized for use with low-ESR ceramic chip capacitors. High-ESR capacitors may cause high frequency oscillation. The output capacitor can be increased, but performance has been optimized for a 1 µF ceramic output capacitor and does not improve significantly with larger capacitance. X7R/X5R dielectric-type ceramic capacitors are recommended because of their temperature performance. X7R-type capacitors change capacitance by 15% over their operating temperature range and are the most stable type of ceramic capacitors on the market. Z5U and Y5V dielectric capacitors change value by as much as 50% and 60%, respectively, over their operating temperature ranges. To use a ceramic chip capacitor with Y5V dielectric, the value must be much higher than an X7R ceramic capacitor to ensure the same minimum capacitance over the equivalent operating temperature range. 4.4 No-Load Stability Unlike many other voltage regulators, the MIC5335 will remain stable and in regulation with no load. This is especially important in CMOS RAM keep-alive applications.  2018 Microchip Technology Inc. 4.5 Thermal Considerations The MIC5335 is designed to provide 300 mA of continuous current for both outputs in a very small package. Maximum ambient operating temperature can be calculated based upon the output current and the voltage drop across the part. Given that the input voltage is 3.3V, the output voltage is 2.8V for VOUT1, 2.5V for VOUT2, and the output current is 300 mA. The actual power dissipation of the regulator circuit can be determined using the equation: EQUATION 4-1: P D =  V IN – V OUT1   I OUT1 +  V IN – V OUT2   I OUT2 + V IN  I GND P D =  3.3V – 2.8V   300mA +  3.3V – 2.5V   300mA P D = 0.39W Because this device is CMOS and the ground current is typically