MSC017SMA120B Silicon Carbide N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The MSC017SMA120B device is a 1200 V, 17 mΩ SiC MOSFET in a TO-247 package.
Features
The following are key features of the MSC017SMA120B device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant
Benefits
The following are benefits of the MSC017SMA120B device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system cost of ownership
Applications
The MSC017SMA120B device is designed for the following applications:
• PV inverter, converter, and industrial motor drives
• Smart grid transmission and distribution
• Induction heating and welding
• H/EV powertrain and EV charger
• Power supply and distribution
050-7778 MSC017SMA120B Datasheet Revision B
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Device Specifications
Device Specifications
This section shows the specifications of the MSC017SMA120B device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC017SMA120B device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VDSS
Drain source voltage
1200
V
ID
Continuous drain current at TC = 25 °C
113
A
Continuous drain current at TC = 100 °C
80
IDM
Pulsed drain current1
280
VGS
Gate-source voltage
23 to –10
V
PD
Total power dissipation at TC = 25 °C
455
W
Linear derating factor
3.33
W/°C
Note:
1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics of the MSC017SMA120B device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristic
RθJC
Junction-to-case thermal resistance
TJ
Operating junction temperature
TSTG
Storage temperature
TL
Soldering temperature for 10 seconds (1.6 mm from case)
300
Mounting torque, 6-32 or M3 screw
10
lbf-in
1.1
N-m
Wt
Package weight
050-7778 MSC017SMA120B Datasheet Revision B
Min
Typ
Max
Unit
0.22
0.33
°C/W
–55
175
°C
–55
150
0.22
oz
6.2
g
2
Device Specifications
Electrical Performance
The following table shows the static characteristics of the MSC017SMA120B device. TJ = 25 °C unless
otherwise specified.
Table 3 • Static Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 100 µA
1200
RDS(on)
Drain-source on resistance1
VGS = 20 V, ID = 40 A
VGS(th)
Gate-source threshold voltage
VGS = VDS, ID = 4.5 mA
ΔVGS(th)/ΔTJ
Threshold voltage coefficient
VGS = VDS, ID = 4.5 mA
IDSS
Zero gate voltage drain current
VDS, = 1200 V, VGS = 0 V
100
VDS = 1200 V, VGS = 0 V
500
Unit
V
17.6
1.9
Max
22
mΩ
2.7
V
–4.6
mV/°C
µA
TJ = 125 °C
IGSS
Gate-source leakage current
VGS = 20 V/–10 V
±100
nA
Note:
1. Pulse test: pulse width < 380 µs, duty cycle < 2%.
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Device Specifications
The following table shows the dynamic characteristics of the MSC017SMA120B device. TJ = 25 °C unless
otherwise specified.
Table 4 • Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Ciss
Input capacitance
VGS = 0 V, VDD = 1000 V
Min
Typ
5280
Max
Unit
pF
VAC = 25 mV, ƒ = 1 MHz
Crss
Reverse transfer capacitance
12
Coss
Output capacitance
265
Qg
Total gate charge
VGS = –5 V/20 V, VDD = 800 V
249
nC
ID = 40 A
Qgs
Gate-source charge
63
Qgd
Gate-drain charge
32
td(on)
Turn-on delay time
VDD = 800 V, VGS = –5 V/20 V,
52
ns
ID = 50 A, Rg(ext) = 4.0 Ω,
tf
Voltage fall time
td(off)
Turn-off delay time
49
tr
Voltage rise time
16
Eon
Turn-on switching energy
1677
Eoff
Turn-off switching energy
395
td(on)
Turn-on delay time
tf
Voltage fall time
Freewheeling diode =
21
MSC017SMA120B (VGS = –5 V)
VDD = 800 V, VGS = –5 V/20 V,
49
µJ
ns
ID = 50 A, Rg(ext) = 4.0 Ω
Freewheeling diode =
19
MSC050SDA120B
td(off)
Turn-off delay time
49
tr
Voltage rise time
14
Eon
Turn-on switching energy
1329
Eoff
Turn-off switching energy
429
ESR
Equivalent series resistance
f = 1 MHz, 25 mV, drain short
0.71
Ω
SCWT
Short circuit withstand
time
VDS = 960 V, VGS = 20 V
3
µs
EAS
Avalanche energy, single
pulse
VDS = 150 V, ID = 30 A
3500
mJ
050-7778 MSC017SMA120B Datasheet Revision B
µJ
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Device Specifications
The following table shows the body diode characteristics of the MSC017SMA120B device. TJ = 25 °C unless
otherwise specified.
Table 5 • Body Diode Characteristics
Symbol
Characteristic
Test Conditions
VSD
Diode forward voltage
ISD = 40 A, VGS = 0 V
3.5
V
ISD = 40 A, VGS = –5 V
3.9
V
ISD = 50 A, VGS = –5 V,
40
ns
490
nC
22
A
trr
Reverse recovery time
Min
Typ
Max
Unit
Drive Rg = 4 Ω
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 800 V, dl/dt = –2500 A/µs
Typical Performance Curves
This section shows the typical performance curves of the MSC017SMA120B device.
Figure 1 • Drain Current vs. VDS
Figure 2 • Drain Current vs. VDS
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Device Specifications
Figure 3 • Drain Current vs. VDS
Figure 4 • Drain Current vs. VDS
Figure 5 • RDS(on) vs. Junction Temperature
Figure 6 • Gate Charge Characteristics
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 8 • ID vs. VDS 3rd Quadrant Conduction
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Device Specifications
Figure 9 • ID vs. VDS 3rd Quadrant Conduction
Figure 10 • Switching Energy Eon vs. VDS & ID
Figure 11 • Switching Energy Eoff vs. VDS & ID
Figure 12 • Switching Energy vs. Rg
Figure 13 • Switching Energy vs. Temperature
Figure 14 • Switching Energy Eon vs. VDS & ID
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Device Specifications
Figure 15 • Switching Energy Eoff vs. VDS & ID
Figure 16 • Switching Energy vs. Rg
Figure 17 • Threshold Voltage vs. Junction Temp.
Figure 18 • Forward Safe Operating Area
Figure 19 • Maximum Transient Thermal Impedance
050-7778 MSC017SMA120B Datasheet Revision B
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Package Specification
Package Specification
This section shows the package specification of the MSC017SMA120B device.
Package Outline Drawing
The following figure illustrates the TO-247 package outline of the MSC017SMA120B device.
Figure 20 • Package Outline Drawing
The following table shows the TO-247 dimensions and should be used in conjunction with the package
outline drawing.
Table 6 • TO-247 Dimensions
Symbol
Min (mm)
Max (mm)
Min (in.)
Max (in.)
A
4.69
5.31
0.185
0.209
B
1.49
2.49
0.059
0.098
C
2.21
2.59
0.087
0.102
D
0.40
0.79
0.016
0.031
E
5.38
6.20
0.212
0.244
F
3.50
3.81
0.138
0.150
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Package Specification
Symbol
Min (mm)
Max (mm)
Min (in.)
Max (in.)
G
6.15 BSC
H
20.80
21.46
0.819
0.845
I
19.81
20.32
0.780
0.800
J
4.00
4.50
0.157
0.177
K
1.01
1.40
0.040
0.055
L
2.87
3.12
0.113
0.123
M
1.65
2.13
0.065
0.084
N
15.49
16.26
0.610
0.640
O
13.50
14.50
0.531
0.571
P
16.50
17.50
0.650
0.689
Q
5.45 BSC
R
2.00
2.75
0.079
0.108
S
7.10
7.50
0.280
0.295
Terminal 1
Gate
Terminal 2
Drain
Terminal 3
Source
Terminal 4
Drain
0.242 BSC
0.215 BSC
050-7778 MSC017SMA120B Datasheet Revision B
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050-7778 | November 2020 | Preliminary
050-7778 MSC017SMA120B Datasheet Revision B
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