MSC030SDA120K Zero Recovery Silicon Carbide Schottky Diode
1
Product Overview
The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases
your performance over silicon diode solutions while lowering your total cost of ownership for highvoltage applications. The MSC030SDA120K is a 1200 V, 30 A SiC SBD in a two-lead TO-220 package
shown below.
1.1
Features
The following are key features of the MSC030SDA120K device:
Zero recovery characteristics
Low forward voltage
Low leakage current
Avalanche-energy rated
RoHS compliant
1.2
Benefits
The following are benefits of the MSC030SDA120K device:
High switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems
Increased system power density
1.3
Applications
The MSC030SDA120K device is designed for the following applications:
Power factor correction (PFC)
Anti-parallel diode
Switch-mode power supply
Inverters/converters
Motor controllers
Freewheeling diode
Switch-mode power supply
Inverters/converters
Snubber/clamp diode
053-4100 MSC030SDA120K Datasheet Revision A
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2
Device Specifications
This section shows the specifications of the MSC030SDA120K device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC030SDA120K device.
All ratings are taken at TC = 25 °C unless otherwise specified.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VR
Maximum DC reverse voltage
1200
V
VRRM
Maximum peak repetitive reverse voltage
VRWM
Maximum working peak reverse voltage
IF
Maximum DC forward current
TC = 25 °C
70
A
TC = 135 °C
32
TC = 145 °C
27
IFRM
Repetitive peak forward surge current (tp = 8.3 ms, half sine wave)
92
IFSM
Non-repetitive forward surge current (tp = 8.3 ms, half sine wave)
165
PTOT
Power dissipation
TC = 25 °C
300
TC = 110 °C
130
TJ , TSTG
Operating junction and storage temperature range
–55 to 175
TL
Lead temperature for 10 seconds
300
EAS
Single pulse avalanche energy (starting TJ = 25 °C, L = 0.22 mH,
peak IL = 30 A)
100
W
°C
mJ
The following table shows the thermal and mechanical characteristics of the MSC030SDA120K device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristic
RθJC
Wt
Min
Typ
Max
Unit
Junction-to-case thermal resistance
0.35
0.50
°C/W
Package weight
0.07
oz
1.9
g
Mounting torque, 6-32 or M3 screw
10
lbf-in
1.1
N-m
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2.2
Electrical Performance
The following table shows the static characteristics of the MSC030SDA120K device.
Table 3 • Static Characteristics
Symbol
Characteristic
Test Conditions
Typ
Max
Unit
VF
Forward Voltage
IF = 30 A, TJ = 25 °C
1.5
1.8
V
IF = 30 A, TJ = 175 °C
2.1
VR = 1200 V, TJ = 25 °C
9
200
μA
VR = 1200 V, TJ = 175 °C
150
IRM
Reverse leakage current
Min
QC
Total capacitive charge
VR = 600 V, TJ = 25 °C
130
nC
CJ
Junction capacitance
VR = 400 V, TJ = 25 °C, ƒ = 1 MHz
141
pF
Junction capacitance
VR = 800 V, TJ = 25 °C, ƒ = 1 MHz
105
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2.3
Typical Performance Curves
This section shows the typical performance curves of the MSC030SDA120K device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs. Forward Voltage
Figure 3 • Max. Forward Current vs. Case Temp.
Figure 4 • Max. Power Dissipation vs. Case Temp.
Figure 5 • Reverse Current vs. Reverse Voltage
053-4100 MSC030SDA120K Datasheet Revision A
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Figure 4 • Max. Power Dissipation vs. Case Temp.
Figure 5 • Reverse Current vs. Reverse Voltage
Figure 6 • Total Capacitive Charge vs. Reverse Voltage
Figure 7 • Junction Capacitance vs. Reverse Voltage
053-4100 MSC030SDA120K Datasheet Revision A
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3
Package Specification
This section shows the package specification of the MSC030SDA120K device.
3.1
Package Outline Drawing
The following figure illustrates the TO-220 package drawing of the MSC030SDA120K device.
Figure 8 • Package Outline Drawing
The following table lists the TO-220 dimensions and should be used in conjunction with the package
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The following table lists the TO-220 dimensions and should be used in conjunction with the package
outline drawing.
Table 4 • TO-220 Dimensions
Symbol
Min (mm)
Max (mm)
Min (in.)
Max (in.)
A
4.32
4.57
0.170
0.180
B
1.14
1.40
0.045
0.055
C
2.50
2.74
0.098
0.108
D
0.36
0.53
0.014
0.021
E
2.65
3.05
0.104
0.120
F
3.60
3.96
0.142
0.156
G
14.50
15.60
0.571
0.614
H
2.39
3.65
0.094
0.144
I
6.00
6.80
0.236
0.268
J
8.40
9.00
0.331
0.354
K
13.00
14.00
0.512
0.551
L
1.23
1.39
0.048
0.055
M
0.69
0.88
0.027
0.035
N
10.00
10.36
0.394
0.408
O
7.57
7.90
0.298
0.311
P
12.20
13.10
0.480
0.516
Q
2.54 BSC (nom.)
Terminal 1
Cathode
Terminal 2
Anode
Terminal 3
Cathode
0.100 BSC (nom.)
053-4100 MSC030SDA120K Datasheet Revision A
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053-4100 | June 2019 | Released
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