MSC050SDA070B

MSC050SDA070B Datasheet Zero Recovery Silicon Carbide Schottky Diode Final May 2018 Zero Recovery Silicon Carbide Schottky Diode Contents 1 Revision History ............................................................................................................................. 1 1.1 Revision A ........................................................................................................................................... 1 2 Product Overview .......................................................................................................................... 2 2.1 Features .............................................................................................................................................. 2 2.2 Benefits ............................................................................................................................................... 2 2.3 Applications ........................................................................................................................................ 2 3 Electrical Specifications .................................................................................................................. 3 3.1 Absolute Maximum Ratings ................................................................................................................ 3 3.2 Electrical Performance ....................................................................................................................... 4 3.3 Performance Curves ........................................................................................................................... 5 4 Package Specification ..................................................................................................................... 7 4.1 Package Outline Drawing ................................................................................................................... 7 MSC050SDA070B Datasheet Revision A Zero Recovery Silicon Carbide Schottky Diode 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision A Revision A was published in May 2018. It is the first publication of this document. MSC050SDA070B Datasheet Revision A 1 Zero Recovery Silicon Carbide Schottky Diode 2 Product Overview This section shows the product overview for the MSC050SDA070B device. 2.1 Features The following are key features of the MSC050SDA070B device: Ultra-fast recovery times Soft recovery characteristics Low forward voltage Low leakage current Avalanche energy rated RoHS compliant 2.2 Benefits The following are benefits of the MSC050SDA070B device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 2.3 Applications The MSC050SDA070B device is designed for the following applications: Power Factor Correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode MSC050SDA070B Datasheet Revision A 2 Zero Recovery Silicon Carbide Schottky Diode 3 Electrical Specifications This section shows the electrical specifications for the MSC050SDA070B device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA070B device. All ratings: TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 700 V VRRM Maximum peak repetitive reverse voltage 700 VRWM Maximum working peak reverse voltage 700 IF Maximum DC forward current (Tc = 25 °C) 88 Maximum DC forward current (Tc = 135 °C) 39 Maximum DC forward current (Tc = 145 °C) 32 IFRM Repetitive peak forward surge current (Tc = 25 °C, tp = 10 ms, half sine wave) 128 IFSM Non-repetitive forward surge current (Tc = 25 °C, tp = 10 ms, half sine wave) 124 Ptot Power dissipation (Tc = 25 °C) 283 Power dissipation (Tc = 110 °C) 123 TJ , TSTG Operating and storage temperature range –55 to 175 TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy (starting TJ = 25 °C, L = 0.08 mH, peak IL = 50 A) 100 A W °C mJ The following table shows the thermal and mechanical characteristics of the MSC050SDA70B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic Typ Max Unit RθJC Junction-to-case thermal resistance Min 0.37 0.53 °C/W WT Package weight 0.22 oz 5.9 g Mounting torque, 6-32 or M3 screw MSC050SDA070B Datasheet Revision A 10 lbf-in 1.1 N-m 3 Zero Recovery Silicon Carbide Schottky Diode 3.2 Electrical Performance The following table shows the static characteristics of the MSC050SDA070B device. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Typ Max Unit VF Forward voltage IF = 50 A, TJ = 25 °C 1.5 1.8 V IF = 50 A, TJ = 175 °C 1.9 VR = 700 V, TJ = 25 °C 15 200 μA VR = 700 V, TJ = 175 °C 250 IRM Reverse leakage current QC Total capacitive charge VR = 400 V, TJ = 25 °C 133 nC CJ Junction capacitance VR = 1 V, TJ = 25 °C, ƒ = 1 MHz 2034 pF Junction capacitance VR = 200 V, TJ = 25 °C, ƒ = 1 MHz 248 Junction capacitance VR = 400 V, TJ = 25 °C, ƒ = 1 MHz 216 MSC050SDA070B Datasheet Revision A 4 Zero Recovery Silicon Carbide Schottky Diode 3.3 Performance Curves This section shows the typical performance curves for the MSC050SDA070B device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs Forward Voltage Figure 3 • Max Forward Current vs Case Temp Figure 4 • Max Power Dissipation vs Case Temp Figure 5 • Reverse Current vs. Reverse Voltage MSC050SDA070B Datasheet Revision A 5 Zero Recovery Silicon Carbide Schottky Diode Figure 4 • Max Power Dissipation vs Case Temp Figure 5 • Reverse Current vs. Reverse Voltage Figure 6 • Total Capacitive Charge vs. Reverse Voltage Figure 7 • Junction Capacitance vs Reverse Voltage MSC050SDA070B Datasheet Revision A 6 Zero Recovery Silicon Carbide Schottky Diode 4 Package Specification This section outlines the package specification for the MSC050SDA070B device. 4.1 Package Outline Drawing This section shows the TO-247 package drawing of the MSC050SDA070B device. Dimensions are in millimeters and (inches). Figure 8 • Package Outline Drawing MSC050SDA070B Datasheet Revision A 7 Zero Recovery Silicon Carbide Schottky Diode Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2018 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com. 053-4080 MSC050SDA070B Datasheet Revision A 8