MSC050SDA070BCT

MSC050SDA070BCT Zero Recovery Silicon Carbide Schottky Dual Diode Product Overview The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC050SDA070BCT is a 700 V, 50 A SiC dual common cathode SBD in a three-lead TO-247 package shown below. Features The following are key features of the MSC050SDA070BCT device: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche energy rated • RoHS compliant Benefits The following are benefits of the MSC050SDA070BCT device: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density Applications The MSC050SDA070BCT device is designed for the following applications: • Power factor correction (PFC) • Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers • Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters • Snubber/clamp diode 053-4115 MSC050SDA070BCT_Datasheet Revision A 1 Electrical Specifications Electrical Specifications This section shows the specifications for the MSC050SDA070BCT device. All ratings are per leg. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA070BCT device. All ratings: TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 700 V VRRM Maximum peak repetitive reverse voltage 700 VRWM Maximum working peak reverse voltage 700 IF Maximum DC forward current (Tc = 25 °C) 88 Maximum DC forward current (Tc = 135 °C) 39 Maximum DC forward current (Tc = 145 °C) 32 IFRM Repetitive peak forward surge current (Tc = 25 °C, tp = 8.3 ms, half sine wave) 128 IFSM Non-repetitive forward surge current (Tc = 25 °C, tp = 8.3 ms, half sine wave) 124 Ptot Power dissipation (Tc = 25 °C) 283 Power dissipation (Tc = 110 °C) 123 TJ , TSTG Operating and storage temperature range –55 to 175 TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy (starting TJ = 25 °C, L = 0.08 mH, peak IL = 50 A) 100 A W °C mJ The following table shows the thermal and mechanical characteristics of the MSC050SDA70BCT device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC WT Min Typ Max Unit Junction-to-case thermal resistance 0.37 0.53 °C/W Package weight 0.22 053-4115 MSC050SDA070BCT_Datasheet Revision A oz 2 Electrical Specifications Symbol Characteristic Min Typ Max Unit 5.9 Mounting torque, 6-32 or M3 screw g 10 lbf-in 1.1 N-m Electrical Performance The following table shows the static characteristics of the MSC050SDA070BCT device. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Typ Max Unit VF Forward voltage IF = 50 A, TJ = 25 °C 1.5 1.8 V IF = 50 A, TJ = 175 °C 1.9 VR = 700 V, TJ = 25 °C 15 200 μA VR = 700 V, TJ = 175 °C 250 IRM Reverse leakage current QC Total capacitive charge VR = 400 V, TJ = 25 °C 133 nC CJ Junction capacitance VR = 1 V, TJ = 25 °C, ƒ = 1 MHz 2034 pF Junction capacitance VR = 200 V, TJ = 25 °C, ƒ = 1 MHz 248 Junction capacitance VR = 400 V, TJ = 25 °C, ƒ = 1 MHz 216 053-4115 MSC050SDA070BCT_Datasheet Revision A 3 Electrical Specifications Performance Curves This section shows the typical performance curves for the MSC050SDA070BCT device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs Forward Voltage Figure 3 • Max Forward Current vs Case Temp 053-4115 MSC050SDA070BCT_Datasheet Revision A 4 Electrical Specifications Figure 4 • Max Power Dissipation vs Case Temp Figure 5 • Reverse Current vs. Reverse Voltage Figure 6 • Total Capacitive Charge vs. VR Figure 7 • Junction Capacitance vs VR 053-4115 MSC050SDA070BCT_Datasheet Revision A 5 Package Specification Package Specification This section outlines the package specification for the MSC050SDA070BCT device. Package Outline Drawing This section shows the TO-247 package drawing of the MSC050SDA070BCT device. Dimensions are in millimeters and (inches). Figure 8 • Package Outline Drawing The following table shows the TO-247 dimensions and should be used in conjunction with the package outline drawing. Table 4 • Dimensions Symbol Min. (mm) Max. (mm) Min. (in.) Max (in.) A 4.69 5.31 0.185 0.209 B 1.49 2.49 0.059 0.098 C 2.21 2.59 0.087 0.102 D 0.40 0.79 0.016 0.031 E 5.38 6.20 0.212 0.244 F 3.50 3.81 0.138 0.150 053-4115 MSC050SDA070BCT_Datasheet Revision A 6 Package Specification Symbol Min. (mm) Max. (mm) Min. (in.) Max (in.) G 6.15 BSC H 20.80 21.46 0.819 0.845 I 19.81 20.32 0.780 0.800 J 4.00 4.50 0.157 0.177 K 1.01 1.40 0.040 0.055 L 2.87 3.12 0.113 0.123 M 1.65 2.13 0.065 0.084 N 15.49 16.26 0.610 0.640 O 13.50 14.50 0.531 0.571 P 16.50 17.50 0.650 0.689 Q 5.45 BSC R 2.00 2.75 0.079 0.108 S 7.10 7.50 0.280 0.295 Terminal 1 Anode 1 Terminal 2 Common cathode Terminal 3 Anode 2 Terminal 4 Common cathode 0.242 BSC 0.215 BSC 053-4115 MSC050SDA070BCT_Datasheet Revision A 7 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. 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Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. 053-4115 | February 2020 | Released 053-4115 MSC050SDA070BCT_Datasheet Revision A 8