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MSC050SDA120BCT

MSC050SDA120BCT

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TO247

  • 描述:

    SIC SBD 1200 V 50 A TO-247

  • 数据手册
  • 价格&库存
MSC050SDA120BCT 数据手册
MSC050SDA120BCT Zero Recovery Silicon Carbide Schottky Dual Diode Product Overview The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC050SDA120BCT is a 1200 V, 50 A SiC dual common cathode SBD in a three-lead TO-247 package shown below. Features The following are key features of the MSC050SDA120BCT device: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche energy rated • RoHS compliant Benefits The following are benefits of the MSC050SDA120BCT device: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density Applications The MSC050SDA120BCT device is designed for the following applications: • Power factor correction (PFC) • Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers • Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters • Snubber/clamp diode 053-4116 MSC050SDA120BCT Datasheet Revision A 1 Device Specifications Device Specifications This section details the specifications for the MSC050SDA120BCT device. All ratings are per leg. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA120BCT device. All ratings at TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF Maximum DC forward current TC = 25 °C 109 A TC = 135 °C 49 TC = 145 °C 41 IFRM Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half sine wave) 154 IFSM Non-repetitive forward surge current (TC = 25 °C, tp = 8.3 ms, half sine wave) 290 Ptot Power dissipation TJ , TST- TC = 25 °C 429 TC = 110 °C 186 Operating junction and storage temperature range –55 to 175 TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy (starting TJ = 25 °C, L = 0.08 mH, peak IL = 50 A) 100 W °C G mJ The following table shows the thermal and mechanical characteristics of the MSC050SDA120BCT device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic RθJC WT Min Typ Max Unit Junction-to-case thermal resistance 0.24 0.35 °C/W Package weight 0.22 053-4116 MSC050SDA120BCT Datasheet Revision A oz 2 Device Specifications Symbol Characteristic Min Typ Max Unit 5.9 g Maximum mounting torque 10 lbf-in 1.1 N-m Electrical Performance The following table shows the static characteristics of the MSC050SDA120BCT device. Table 3 • Static Characteristics Symbol Characteristic/Test Conditions VF Forward voltage IRM Reverse leakage current Min Typ Max Unit IF = 50 A, TJ = 25 °C 1.5 1.8 V IF = 50 A, TJ = 175 °C 2.1 VR = 1200 V, TJ = 25 °C 15 200 μA VR = 1200 V, TJ = 175 °C 250 QC Total capacitive charge VR = 600 V, TJ = 25 °C 224 nC CJ Junction capacitance VR = 400 V, TJ = 25 °C, ƒ = 1 MHz 246 pF Junction capacitance VR = 800 V, TJ = 25 °C, ƒ = 1 MHz 182 053-4116 MSC050SDA120BCT Datasheet Revision A 3 Device Specifications Performance Curves This section shows the typical performance curves for the MSC050SDA120BCT device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Max Forward Current vs. Case Temp 053-4116 MSC050SDA120BCT Datasheet Revision A 4 Device Specifications Figure 4 • Max Power Dissipation vs. Case Temp Figure 6 • Total Capacitive Charge vs. VR Figure 5 • Reverse Current vs. Reverse Voltage Figure 7 • Junction Capacitance vs. VR 053-4116 MSC050SDA120BCT Datasheet Revision A 5 Package Specification Package Specification This section outlines the package specification for the MSC050SDA120BCT device. Package Outline Drawing This section details the TO-247 package drawing of the MSC050SDA120BCT device. Dimensions are in millimeters and (inches). Figure 8 • Package Outline Drawing The following table shows the TO-247 dimensions and should be used in conjunction with the package outline drawing. Table 4 • Dimensions Symbol Min. (mm) Max. (mm) Min. (in.) Max (in.) A 4.69 5.31 0.185 0.209 B 1.49 2.49 0.059 0.098 C 2.21 2.59 0.087 0.102 D 0.40 0.79 0.016 0.031 E 5.38 6.20 0.212 0.244 F 3.50 3.81 0.138 0.150 053-4116 MSC050SDA120BCT Datasheet Revision A 6 Package Specification Symbol Min. (mm) Max. (mm) Min. (in.) Max (in.) G 6.15 BSC H 20.80 21.46 0.819 0.845 I 19.81 20.32 0.780 0.800 J 4.00 4.50 0.157 0.177 K 1.01 1.40 0.040 0.055 L 2.87 3.12 0.113 0.123 M 1.65 2.13 0.065 0.084 N 15.49 16.26 0.610 0.640 O 13.50 14.50 0.531 0.571 P 16.50 17.50 0.650 0.689 Q 5.45 BSC R 2.00 2.75 0.079 0.108 S 7.10 7.50 0.280 0.295 Terminal 1 Anode 1 Terminal 2 Common cathode Terminal 3 Anode 2 Terminal 4 Common cathode 0.242 BSC 0.215 BSC 053-4116 MSC050SDA120BCT Datasheet Revision A 7 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. 053-4116 | February 2020 | Released 053-4116 MSC050SDA120BCT Datasheet Revision A 8
MSC050SDA120BCT 价格&库存

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