MSC050SDA170B

MSC050SDA0170B Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview This section shows the product overview for the MSC050SDA170B device. 1.1 Features The following are key features of the MSC050SDA170B device: No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA170B device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA170B device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4095 MSC050SDA0170B Datasheet Revision A 1 2 Device Specifications This section details the specifications for the MSC050SDA170B device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA170B device. All ratings: TC = 25 °C unless otherwise specified. Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1700 V VRRM Maximum peak repetitive reverse voltage 1700 VRWM Maximum working peak reverse voltage 1700 IF Maximum DC forward current TC = 25 °C 136 TC = 135 °C 62 TC = 145 °C 51 IFRM Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half sine wave) 192 IFSM Non-repetitive forward surge current (TC = 25 °C, tp = 8.3 ms, half sine wave) 432 Ptot Power dissipation TC = 25 °C 652 TC = 110 °C 282 TJ , TSTG Operating junction and storage temperature range –55 to 175 TL Lead temperature for 10 seconds 300 EAS Single pulse avalanche energy (starting TJ = 25 °C, L = 0.08 mH, peak IL = 50 A) 100 A W °C mJ The following table shows the thermal and mechanical characteristics of the MSC050SDA170B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions RθJC Wt Min Typ Max Unit Junction-to-case thermal resistance 0.15 0.23 °C/W Package weight 0.22 oz 6.2 g Mounting torque, 6-32 or M3 screw 053-4095 MSC050SDA0170B Datasheet Revision A 10 lbf-in 1.1 N-m 2 2.2 Electrical Performance The following table shows the static characteristics of the MSC050SDA170B device. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Typ Max Unit VF Forward voltage IF = 50 A, TJ = 25 °C 1.5 1.8 V IF = 50 A, TJ = 175 °C 2.0 VR = 1700 V, TJ = 25 °C 50 200 μA VR = 1700 V, TJ = 175 °C 250 IRM Reverse leakage current Min QC Total capacitive charge VR = 900 V, TJ = 25 °C 410 nC CJ Junction capacitance VR = 1 V, TJ = 25 °C, ƒ = 1 MHz 4450 pF Junction capacitance VR = 600 V, TJ = 25 °C, ƒ = 1 MHz 300 Junction capacitance VR = 900 V, TJ = 25 °C, ƒ = 1 MHz 250 053-4095 MSC050SDA0170B Datasheet Revision A 3 2.3 Performance Curves This section shows the typical performance curves for the MSC050SDA170B device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Max. Forward Current vs. Case Temp. Figure 4 • Max. Power Dissipation vs. Case Temp. Figure 5 • Reverse Current vs. Reverse Voltage 053-4095 MSC050SDA0170B Datasheet Revision A 4 Figure 4 • Max. Power Dissipation vs. Case Temp. Figure 5 • Reverse Current vs. Reverse Voltage Figure 6 • Total Capacitive Charge vs. Reverse Voltage Figure 7 • Junction Capacitance vs. Reverse Voltage 053-4095 MSC050SDA0170B Datasheet Revision A 5 3 Package Specification This section outlines the package specification for the MSC050SDA170B device. 3.1 Package Outline Drawing This section details the TO-247 package drawing of the MSC050SDA170B device. Dimensions are in millimeters and (inches). Figure 8 • Package Outline Drawing 053-4095 MSC050SDA0170B Datasheet Revision A 6 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 053-4095 | March 2019 | Preliminary 053-4095 MSC050SDA0170B Datasheet Revision A 7