MSC090SMA070S Silicon Carbide N-Channel Power MOSFET
1
Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over
silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage
applications. The MSC090SMA070S device is a 700 V, 90 mΩ SiC MOSFET in a TO-268 (D3PAK) package.
1.1
Features
The following are key features of the MSC090SMA070S device:
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
1.2
Benefits
The following are benefits of the MSC090SMA070S device:
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need for external freewheeling diode
Lower system cost of ownership
1.3
Applications
The MSC090SMA070S device is designed for the following applications:
PV inverter, converter, and industrial motor drives
Smart grid transmission and distribution
Induction heating and welding
H/EV powertrain and EV charger
Power supply and distribution
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2
Device Specifications
This section shows the specifications for the MSC090SMA070S device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC090SMA070S device.
Table 1 • Absolute Maximum Ratings
Symbol
Characteristic
Ratings
Unit
VDSS
Drain source voltage
700
V
ID
Continuous drain current at TC = 25 °C
25
A
Continuous drain current at T C = 100 °C
18
IDM
Pulsed drain current
65
VGS
Gate-source voltage
23 to –10
V
PD
Total power dissipation at TC = 25 °C
91
W
Linear derating factor
0.60
W/°C
1
Note:
1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
The following table shows the thermal and mechanical characteristics for the MSC090SMA070S device.
Table 2 • Thermal and Mechanical Characteristics
Symbol
Characteristic
Min
RθJC
Junction-to-case thermal resistance
TJ
Operating junction temperature
TSTG
Storage temperature
TL
Soldering temperature for 10 seconds (1.6 mm from case)
Wt
Package weight
Typ
Max
Unit
1.10
1.65
°C/W
–55
175
°C
–55
150
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0.14
oz
4.0
g
2
2.2
Electrical Performance
The following table shows the static characteristics for the MSC090SMA070S device. T J = 25 °C unless
otherwise specified.
Table 3 • Static Characteristics
Symbol
Characteristic
Test Conditions
Min
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 100 µA
700
RDS(on)
Drain-source on resistance
VGS = 20 V, ID = 15 A
VGS(th)
Gate-source threshold voltage
VGS = VDS, ID = 0.75 mA
ΔVGS(th)/ΔTJ
Threshold voltage coefficient
VGS = VDS, ID = 0.75 mA
IDSS
Zero gate voltage drain current
VDS, = 700 V, VGS = 0 V
100
VDS = 700 V, VGS = 0 V
TJ = 125 °C
500
VGS = 20 V/–10 V
±100
IGSS
1
Gate-source leakage current
Typ
Unit
V
90
1.9
Max
115
mΩ
2.4
V
–3.4
mV/°
C
µA
nA
Notes:
1. Pulse test: pulse width < 380 µs, duty cycle < 2%.
The following table shows the dynamic characteristics for the MSC090SMA070S device. T J = 25 °C unless
otherwise specified.
Table 4 • Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Ciss
Input capacitance
Crss
Reverse transfer capacitance
VGS = 0 V, VDD = 700 V, VAC = 25 mV,
ƒ = 1 MHz
Min
Typ
Coss
Output capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
td(on)
Turn-on delay time
tr
Current rise time
td(off)
Turn-off delay time
tf
Current fall time
Eon
Turn-on switching energy
Eoff
Turn-off switching energy
td(on)
Turn-on delay time
tr
Current rise time
td(off)
Turn-off delay time
tf
Current fall time
7
Eon
Turn-on switching energy 2
67
Eoff
Turn-off switching energy
14
ESR
Equivalent series resistance
f = 1 MHz, 25 mV, drain short
4
Ω
SCWT
Short circuit withstand time
VDS = 560 V, VGS = 20 V
3
µs
785
Max
Unit
pF
5
85
VGS = –5 V/20 V, VDD = 470 V
ID = 15 A
38
nC
10
6
VDD = 470 V, VGS = –5 V/20 V, ID = 15 A
RG(ext) = 4 Ω1,
Freewheeling diode =
MSC090SMA070S
20
ns
9
31
10
85
2
µJ
14
VDD = 470 V, VGS = –5 V/20 V, ID = 15 A
RG(ext) = 4 Ω 1
Freewheeling diode =
MSC010SDA070S
050-7758 MSC090SMA070S Datasheet Revision A
20
ns
7
30
µJ
3
Symbol
Characteristic
Test Conditions
Min
EAS
Avalanche energy, single
pulse
VDS = 150 V, VGS = 20 V, ID = 15 A
Typ
770
Max
Unit
mJ
Notes:
1. RG is total gate resistance excluding internal gate driver impedance.
2. Eon includes energy of freewheeling diode.
The following table shows the body diode characteristics for the MSC090SMA070S device. T J = 25 °C
unless otherwise specified.
Table 5 • Body Diode Characteristics
Symbol
Characteristic
Test Conditions
VSD
Diode forward voltage
ISD = 15 A, VGS = 0 V
4.0
V
ISD = 15 A, VGS = –5 V
4.2
V
ISD = 15 A, VGS = –5 V
VDD = 470 V
dl/dt = –1200 A/µs
24
ns
134
nC
9
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Min
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Typ
Max
Unit
4
2.3
Typical Performance Curves
This section shows the typical performance curves for the MSC090SMA070S device.
Figure 1 • Drain Current vs. Drain-to-Source Voltage
Figure 2 • Drain Current vs. Drain-to-Source Voltage
Figure 3 • Drain Current vs. Drain-to-Source Voltage
Figure 4 • Drain Current vs. Drain-to-Source Voltage
Figure 5 • RDS(on) vs. Junction Temperature
Figure 6 • Gate Charge Characteristics
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Figure 5 • RDS(on) vs. Junction Temperature
Figure 6 • Gate Charge Characteristics
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 8 • IDM vs. Gate-to-Source Voltage
Figure 9 • IDM vs. VDS Third Quadrant Conduction
Figure 10 • IDM vs. VDS Third Quadrant Conduction
Figure 11 • VGS(th) vs. Junction Temp.
Figure 12 • Forward Safe Operating Area
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Figure 11 • VGS(th) vs. Junction Temp.
Figure 12 • Forward Safe Operating Area
Figure 13 • Maximum Transient Thermal Impedance
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3
Package Specification
This section shows the package specification for the MSC090SMA070S device.
3.1
Package Outline Drawing
The following figure illustrates the TO-268 package outline of the MSC090SMA070S device.
Figure 14 • Package Outline Drawing
The following table shows the TO-268 dimensions and should be used in conjunction with the package
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The following table shows the TO-268 dimensions and should be used in conjunction with the package
outline drawing.
Table 6 • TO-268 Dimensions
Symbol
Min (mm)
Max (mm)
Min (in.)
Max (in.)
A
4.90
5.10
0.193
0.201
B
15.85
16.20
0.624
0.638
C
18.70
19.10
0.736
0.752
D
1.00
1.25
0.039
0.049
E
13.80
14.00
0.543
0.551
F
13.30
13.60
0.524
0.535
G
2.70
2.90
0.106
0.114
H
1.15
1.45
0.045
0.057
I
1.95
2.21
0.077
0.087
J
0.94
1.40
0.037
0.055
K
2.40
2.70
0.094
0.106
L
0.40
0.60
0.016
0.024
M
1.45
1.60
0.057
0.063
N
0.00
0.18
0.000
0.007
O
12.40
12.70
0.488
0.500
P
5.45 BSC (nom.)
Terminal 1
Gate
Terminal 2
Drain
Terminal 3
Source
Terminal 4
Drain
0.215 BSC (nom.)
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050-7758 | October 2019 | Released
050-7758 MSC090SMA070S Datasheet Revision A
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