MSC100SM70JCU3

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MSC100SM70JCU3 Datasheet Buck Chopper SiC MOSFET Power Module April 2020 Contents Contents 1 Revision History.................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 2 Product Overview..............................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 3 Electrical Specifications.....................................................................................................................4 3.1 SiC MOSFET Characteristics................................................................................................................................4 3.2 SiC Chopper Diode Ratings and Characteristics..................................................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 3.4 Typical SiC MOSFET Performance Curves...........................................................................................................7 3.5 Typical SiC Diode Performance Curves.............................................................................................................10 4 Package Specifications.....................................................................................................................11 4.1 Package Outline Drawing..................................................................................................................................11 Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in April 2020. It is the first publication of this document. Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSC100SM70JCU3 device is a buck chopper 700 V, 124 A full Silicon Carbide (SiC) power module. All ratings at TJ = 25°C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSC100SM70JCU3 device: • Silicon carbide (SiC) Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature-independent switching behavior ◦ Positive temperature coefficient on VF • SiC Power MOSFET ◦ High-speed switching ◦ Low RDS(on) ◦ Ultra low loss 2.2 Benefits The following are benefits of the MSC100SM70JCU3 device: • High-efficiency converter • Very low stray inductance • Outstanding performance at high-frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • RoHS compliant 2.3 Applications The MSC100SM70JCU3 device is designed for the following applications: • AC and DC motor control • Switched mode power supplies Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section provides the electrical specifications for the MSC100SM70JCU3 device. 3.1 SiC MOSFET Characteristics The following table shows the absolute maximum ratings per SiC MOSFET of the MSC100SM70JCU3 device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VDSS Drain-source voltage 700 V ID Continuous drain current Tc = 25 °C 1241 A Tc = 80 °C 981 IDM Pulsed drain current 250 VGS Gate-source voltage –10/25 V RDSon Drain-source ON resistance 19 mΩ PD Power dissipation 365 W Tc = 25 °C Note: 1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors. The following table shows the electrical characteristics of MSC100SM70JCU3 device. Table 2 • Electrical Characteristics Symbol Characteristics Test Conditions IDSS Zero gate voltage drain current VGS = 0 V ; VDS = 700 V RDS(on) Drain-source on resistance VGS = 20 V ID = 40 A Min Typ TJ = 25 °C 15 TJ = 175 °C 18.8 VGS(th) Gate-threshold voltage VGS = VDS, ID = 4 mA IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V 1.9 Max Unit 100 µA 19 mΩ 2.4 Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 V 150 nA 4 Electrical Specifications The following table shows the dynamic characteristics of MSC100SM70JCU3 device. Table 3 • Dynamic Characteristics Symbol Characteristics Test Conditions Ciss Input capacitance VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Td(on) Turn-on delay time Min Typ Max Unit 4500 VDS = 700 V pF 510 f = 1 MHz 29 VGS= –5/20 V 215 VBus = 470 V nC 58 ID = 40 A 35 VGS = –5/20 V 40 VBus = 400 V Tr Rise time Td(off) Turn-off delay time Tf Fall time RGOFF = 4.7 Ω Eon Turn on energy VGS = –5/20 V Eoff Turn off energy ns 35 ID = 80 A TJ = 150 °C 50 RGON = 27 Ω VBus = 400 V ID = 80 A 20 TJ = 150 °C 545 µJ TJ = 150 °C 186 µJ 0.69 Ω RGON = 27 Ω RGOFF = 4.7 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.41 °C/W The following table shows the body diode ratings and characteristics of MSC100SM70JCU3 device. Table 4 • Body diode ratings and characteristics Symbol Characteristics Test Conditions VSD Diode forward voltage VGS = 0 V ; ISD = 40 A 3.4 VGS = –5 V ; ISD = 40 A 3.8 ISD = 40 A 38 ns 318 nC 14.8 A trr Reverse recovery time Qrr Reverse recovery charge Irr Reverse recovery current VGS = –5 V VR = 400 V diF/dt = 1000 A/µs Min Typ Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 Max Unit V 5 Electrical Specifications 3.2 SiC Chopper Diode Ratings and Characteristics The following table shows the SiC chopper diode ratings and characteristics of MSC100SM70JCU3 device. Table 5 • SiC Schottky Diode Ratings and Characteristics Symbol Characteristics VRRM Peak repetitive reverse voltage IRRM Reverse leakage current IF DC forward current VF Diode forward voltage VR = 700 V IF = 60 A Min Typ TJ = 25 °C 30 TJ = 175 °C 500 TC = 75 °C 60 TJ = 25 °C 1.5 TJ = 175 °C 1.9 Max Unit 700 V 400 µA A 1.8 V QC Total capacitive charge VR = 400 V 166 nC C Total capacitance f = 1 MHz, VR = 200 V 300 pF f = 1 MHz, VR = 400 V 256 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.742 °C/W Thermal and Package Characteristics The following table shows the thermal and package characteristics of MSC100SM70JCU3 device. Table 6 • Thermal and Package Characteristics Symbol Characteristics Min Typ Max VISOL RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz 2500 TSTG Storage temperature range –55 175 TJ Operating junction temperature range –55 175 TJOP Recommended junction temperature under switching conditions –55 TJmax–25 Torque Terminals and mounting screws Wt Package weight Unit V 1.1 29.2 Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 °C N.m g 6 Electrical Specifications 3.4 Typical SiC MOSFET Performance Curves This section shows the typical SiC MOSFET performance curves of the MSC100SM70JCU3 device. Figure 1 • Maximum Thermal Impedance Figure 2 • Output Characteristics, TJ=25 °C Figure 3 • Output Characteristics, TJ=175 °C Figure 4 • Normalized RDS(on) vs. Temperature Figure 5 • Transfer Characteristics Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 7 Electrical Specifications Figure 6 • Capacitance vs. Drain Source Voltage Figure 7 • Gate Charge vs. Gate Source Voltage Figure 8 • Body Diode Characteristics, TJ=25 °C Figure 9 • 3rd Quadrant Characteristics, TJ=25 °C Figure 10 • Body Diode Characteristics, TJ=175 °C Figure 11 • 3rd Quadrant Characteristics, TJ=175 °C Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 8 Electrical Specifications Figure 12 • Switching Energy vs. Current Figure 13 • Turn on Energy vs. Rg Figure 14 • Turn off Energy vs. Rg Figure 15 • Operating Frequency vs. Drain Current Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 9 Electrical Specifications 3.5 Typical SiC Diode Performance Curves This section shows the typical SiC diode performance curves of MSC100SM70JCU3 device. Figure 16 • Maximum Thermal Impedance Figure 17 • Forward Characteristics Figure 18 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 10 Package Specifications 4 Package Specifications The following section shows the package specification of MSC100SM70JCU3 device. 4.1 Package Outline Drawing The following image illustrates the package outline drawing of MSC100SM70JCU3 device. The dimensions are in millimeters and (inches). Figure 19 • Package Outline Drawing Microsemi Proprietary and Confidential MSC100SM70JCU3 Datasheet Revision 1.0 11 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 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