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MSC130SM120JCU3
Datasheet
Buck Chopper SiC MOSFET Power Module
January 2020
Contents
Contents
Revision History....................................................................................................................................1
1.1 Revision 1.0.........................................................................................................................................................1
Product Overview.................................................................................................................................2
2.1 Features..............................................................................................................................................................3
2.2 Benefits...............................................................................................................................................................3
2.3 Applications........................................................................................................................................................3
Electrical Specifications........................................................................................................................4
3.1 SiC MOSFET Characteristics................................................................................................................................4
3.2 SiC Chopper Diode Ratings and Characteristics..................................................................................................6
3.3 Thermal and Package Characteristics.................................................................................................................6
3.4 SiC MOSFET Performance Curves.......................................................................................................................7
3.5 Typical SiC Diode Performance Curves.............................................................................................................10
Package Specifications........................................................................................................................11
4.1 Package Outline Drawing..................................................................................................................................11
Microsemi Proprietary and Confidential MSC130SM120JCU3 Datasheet Revision 1.0
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Revision History
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are listed
by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in January 2020. It is the first publication of this document.
Microsemi Proprietary and Confidential MSC130SM120JCU3 Datasheet Revision 1.0
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Product Overview
2
Product Overview
The MSC130SM120JCU3 device is a 1200 V, 173 A full Silicon Carbide power module.
Figure 1 • Electrical Schematic of MSC130SM120JCU3 Device
Figure 2 • SOT-227 Pinout Location
All ratings at Tj = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
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Product Overview
2.1
Features
The following are key features of the MSC130SM120JCU3 device:
• Silicon Carbide (SiC) Power MOSFET
◦ Low RDS(on)
◦ High temperature performance
• SiC Schottky Diode
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature independent switching behavior
◦ Positive temperature coefficient on VF
2.2
Benefits
The following are benefits of the MSC130SM120JCU3 device:
• High efficiency converter
• Very low stray inductance
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• RoHS compliant
2.3
Applications
The MSC130SM120JCU3 device is designed for the following applications:
• AC and DC motor control
• Switched mode power supplies
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Electrical Specifications
3
Electrical Specifications
This section shows the specifications of the MSC130SM120JCU3 device.
3.1
SiC MOSFET Characteristics
The following table shows the absolute maximum ratings of MSC130SM120JCU3 device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameters
Maximum Ratings
Unit
VDSS
Drain–source voltage
1200
V
ID
Continuous drain current
TC = 25°C
1731
A
TC = 80°C
1381
IDM
Pulsed drain current
350
VGS
Gate–source voltage
–10/25
V
RDSon
Drain–source ON resistance
16
mΩ
PD
Power dissipation
745
W
TC = 25°C
Note:
1. Specification of SiC MOSFET device but output current must be limited due to the size
of power connectors.
The following table shows the electrical characteristics of MSC130SM120JCU3 device.
Table 2 • Electrical Characteristics
Symbol
Characteristics
Test Conditions
IDSS
Zero gate voltage drain current
RDS(on)
Drain–source on resistance
Typ
Max
Unit
VGS = 0 V ; VDS = 1200 V
20
200
μA
VGS = 20 V
TC = 25°C
12.5
16
mΩ
TC = 175°C
20
ID = 80 A
Min
VGS(th)
Gate threshold voltage
VGS = VDS, ID = 2 mA
IGSS
Gate–source leakage current
VGS = 20 V, VDS = 0 V
1.8
Microsemi Proprietary and Confidential MSC130SM120JCU3 Datasheet Revision 1.0
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V
200
nA
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Electrical Specifications
The following table shows the dynamic characteristics of MSC130SM120JCU3 device.
Table 3 • Dynamic Characteristics
Symbol
Characteristics
Test Conditions
Ciss
Input capacitance
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate–source charge
Qgd
Gate–drain charge
Td(on)
Turn-on delay time
Tr
Rise time
Td(off)
Turn-off delay time
Tf
Fall time
Eon
Turn on energy
Min
Typ
Max
6040
VDS = 1000 V
Unit
pF
540
f = 1 MHz
50
VGS= –5/20 V
464
VBus = 800 V
nC
82
ID = 80 A
100
VGS = –5/20 V
30
VBus = 600 V
ns
30
ID = 100 A
RGon = 4 Ω
50
RGoff = 2.4 Ω
25
Inductive Switching
TJ = 150°C
1.98
mJ
TJ = 150°C
1.3
mJ
2.94
Ω
VGS = –5/20 V
Eoff
Turn off energy
VBus = 600 V
ID = 100 A
RGon = 4 Ω
RGoff = 2.4 Ω
RGint
Internal gate resistance
RthJC
Junction-to-case thermal resistance
0.2
°C/W
The following table shows the body diode ratings and characteristics of MSC130SM120JCU3 device.
Table 4 • Body Diode Ratings and Characteristics
Symbol
Characteristics
Test Conditions
VSD
Diode forward voltage
VGS = 0 V ; ISD = 80 A
4
VGS = –5 V ; ISD = 80 A
4.2
ISD = 80 A ;
90
ns
1100
nC
27
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irr
Reverse recovery current
Min
VGS = –5 V
VR = 800 V ;
diF/dt = 2000 A/μs
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Typ
Max
Unit
V
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Electrical Specifications
3.2
SiC Chopper Diode Ratings and Characteristics
The following table shows the SiC chopper diode ratings and characteristics of MSC130SM120JCU3 device.
Table 5 • SiC Chopper Diode Ratings and Characteristics
Symbol
Characteristics
VRRM
Peak repetitive reverse voltage
IRM
Reverse leakage current
IF
DC forward current
VF
Diode forward voltage
VR=1200 V
IF = 50 A
Min
Typ
TJ = 25 °C
15
TJ = 175 °C
250
TC = 100 °C
50
TJ = 25 °C
1.5
TJ = 175 °C
2.1
Max
Unit
1200
V
400
μA
A
1.8
V
QC
Total capacitive charge
VR = 600 V
224
nC
C
Total capacitance
f = 1 MHz, VR = 400 V
246
pF
f = 1 MHz, VR = 800 V
182
RthJC
3.3
Test Conditions
Junction-to-case thermal resistance
0.56
°C/W
Thermal and Package Characteristics
The following table shows the thermal and package characteristics of MSC130SM120JCU3 device.
Table 6 • Thermal and Package Characteristics
Symbol
Characteristics
Min
Typ
Max
VISOL
RMS isolation voltage, any terminal to case t =1 min, 50/60 Hz
2500
TSTG
Storage temperature range
–55
175
TJ
Operating junction temperature range
–55
175
TJOP
Recommended junction temperature under switching conditions
–55
TJmax–25
Torque
Terminals and mounting screws
Wt
Package weight
Unit
V
1.1
29.2
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°C
N.m
g
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Electrical Specifications
3.4
SiC MOSFET Performance Curves
This sections shows the typical SiC MOSFET performance curves of the MSC130SM120JCU3 device.
Figure 3 • Maximum Thermal Impedance
Figure 4 • Output Characteristics, TJ=25 °C
Figure 5 • Output Characteristics, TJ=175 °C
Figure 6 • Normalized RDS(on) vs. Temperature
Figure 7 • Transfer Characteristics
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Electrical Specifications
Figure 8 • Switching Energy vs. Rg
Figure 9 • Switching Energy vs. Current
Figure 10 • Capacitance vs. Drain Source Voltage
Figure 11 • Gate Charge vs. Gate Source Voltage
Figure 12 • Body Diode Characteristics, TJ=25 °C
Figure 13 • 3rd Quadrant Characteristics, TJ=25 °C
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Electrical Specifications
Figure 14 • Body Diode Characteristics, TJ=175 °C
Figure 15 • 3rd Quadrant Characteristics, TJ=175 °C
Figure 16 • Operating Frequency vs. Drain Current
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Electrical Specifications
3.5
Typical SiC Diode Performance Curves
This sections shows the typical SiC diode performance curves of the MSC130SM120JCU3 device.
Figure 17 • Maximum Thermal Impedance
Figure 18 • Forward Characteristics
Figure 19 • Capacitance vs. Reverse Voltage
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Package Specifications
4
Package Specifications
This section shows the package specification of the MSC130SM120JCU3 device.
4.1
Package Outline Drawing
The following figure illustrates the package outline of the MSC130SM120JCU3 device. The dimensions are
in millimeters and (inches).
Figure 20 • Package Outline Drawing
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