MSC50DC120HJ

MSC50DC120HJ SiC Diode Full Bridge Power Module 1 Product Overview This section provides the product overview for the MSC50DC120HJ device. All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. MSCC-0344-DS-01018 Datasheet Revision 1.0 1 1.1 Features The following are key features of the MSC50DC120HJ device: Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independent switching behavior Positive temperature coefficient on VF Very low stray inductance High level of integration 1.2 Benefits The following are benefits of the MSC50DC120HJ device: Outstanding performance at high-frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant 1.3 Applications The MSC50DC120HJ device is designed for the following applications: Switch mode power supplies rectifier Induction heating Welding equipment High-speed rectifiers MSCC-0344-DS-01018 Datasheet Revision 1.0 2 2 Electrical Specifications This section provides the electrical specifications for the MSC50DC120HJ device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per diode for the MSC50DC120HJ device. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VRRM Repetitive peak reverse voltage 1200 V IF DC forward current 50 A TC = 60 °C The following table shows the thermal and package characteristics of the MSC50DC120HJ. Table 2 • Thermal and Package Characteristics 2.2 Symbol Characteristic Min Typ Max VISOL RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz 2500 TJTSTG Storage temperature range –55 175 TJOP Recommended junction temperature under switching conditions –55 TJmax–25 Torque Terminal and mounting screws Wt Package weight Unit V °C 1.1 N.m 29.2 g Electrical Performance The following table shows the electrical characteristics per diode of the MSC50DC120HJ. Table 3 • Electrical Characteristics Per Diode Symbol Characteristic Test Conditions VF Diode forward voltage IF = 50 A IRM Reverse leakage current VR = 1200 V Min Typ Max Unit Tj = 25 °C 1.5 1.8 V Tj = 175 °C 2.1 Tj = 25 °C 15 200 μA Tj = 175 °C 250 QC Total capacitive charge VR = 600 V 224 nC C Total capacitance f = 1 MHz, VR = 400 V 246 pF f = 1 MHz, VR = 800 V 182 RthJC Junction-to-case thermal resistance MSCC-0344-DS-01018 Datasheet Revision 1.0 0.95 °C/W 3 2.3 Performance Curves This section shows the typical performance curves for the MSC50DC120HJ device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Capacitance vs. Reverse Voltage MSCC-0344-DS-01018 Datasheet Revision 1.0 4 3 Package Specifications This section shows the package specifications for the MSC50DC120HJ device. 3.1 Package Outline Drawing The following drawing shows the package outline of the MSC50DC120HJ device. The dimensions in the following figure are in millimeters. Figure 4 • Package Outline Drawing MSCC-0344-DS-01018 Datasheet Revision 1.0 5 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. MSCC-0344-DS-01018 | June 2019 | Final MSCC-0344-DS-01018 Datasheet Revision 1.0 6