MSC70SM120JCU2

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MSC70SM120JCU2 Datasheet Boost Chopper SiC MOSFET Power Module January 2020 Contents Contents Revision History....................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 Product Overview.................................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 SiC MOSFET Characteristics................................................................................................................................4 3.2 SiC Chopper Diode Ratings and Characteristics..................................................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 3.4 SiC MOSFET Performance Curves.......................................................................................................................7 3.5 SiC Diode Performance Curves.........................................................................................................................10 4 Package Specifications.....................................................................................................................11 4.1 Package Outline Drawing..................................................................................................................................11 Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in January 2020. It is the first publication of this document. Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSC70SM120JCU2 device is a 1200 V, 89 A full Silicon Carbide power module. Figure 1 • Electrical Schematic of MSC70SM120JCU2 Device Figure 2 • SOT-227 Pinout Location All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are the features of MSC70SM120JCU2 device: • SiC power MOSFET ◦ Low RDS(on) ◦ High temperature performance • SiC Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF 2.2 Benefits The following are the benefits of MSC70SM120JCU2 device: • High efficiency converter • Very low stray inductance • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • RoHS compliant 2.3 Applications The following are the applications of MSC70SM120JCU2 device: • AC and DC motor control • Switched mode power supplies • Power factor correction • Brake switch Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section provides the electrical specifications for the MSC70SM120JCU2 device. 3.1 SiC MOSFET Characteristics The following table shows the absolute maximum ratings of MSC70SM120JCU2 device. Table 1 • Absolute Maximum Ratings Symbol Parameters Maximum Ratings Unit VDSS Drain–source voltage 1200 V ID Continuous drain current TC = 25 °C 891 A TC = 80 °C 711 IDM Pulsed drain current 180 VGS Gate–source voltage –10/25 V RDSon Drain–source ON resistance 31 mΩ PD Power dissipation 395 W TC = 25 °C Note: 1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors. The following table shows the electrical characteristics of MSC70SM120JCU2 device. Table 2 • Electrical Characteristics Symbol Characteristics Test Conditions IDSS Zero gate voltage drain current RDS(on) Drain–source on resistance Typ Max Unit VGS = 0 V ; VDS = 1200 V 10 100 μA VGS = 20 V TC = 25 °C 25 31 mΩ TC = 175 °C 40 ID = 40 A VGS(th) Gate threshold voltage VGS = VDS, ID = 1 mA IGSS Gate–source leakage current VGS = 20 V, VDS = 0 V Min 1.8 Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 2.8 V 150 nA 4 Electrical Specifications The following table shows the dynamic characteristics of MSC70SM120JCU2 device. Table 3 • Dynamic Characteristics Symbol Characteristics Test Conditions Ciss Input capacitance VGS = 0 V Min Typ Max 3020 VDS = 1000 V Unit pF Coss Output capacitance 270 Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate–source charge Qgd Gate–drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Inductive Switching Tj = 150°C 0.99 mJ Eoff Turn off energy VGS = –5/20 V Tj = 150°C 0.66 mJ 0.88 Ω f = 1 MHz 25 VGS= –5/20 V 232 VBus = 800 V nC 41 ID = 40 A 50 VGS = –5/20 V 30 VBus = 600 V ns 30 ID = 50 A RGon = 8 Ω 50 RGoff = 4.7 Ω 25 VBus = 600 V ID = 50A RGon = 8 Ω RGoff = 4.7 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.38 °C/W The following table shows the body diode ratings and characteristics of MSC70SM120JCU2 device. Table 4 • Body Diode Ratings and Characteristics Symbol Characteristics Test Conditions VSD Diode forward voltage VGS = 0 V Min Typ 4 Max Unit V ISD = 40 A VGS = –5 V 4.2 ISD = 40 A trr Reverse recovery time Qrr Reverse recovery charge Irr Reverse recovery current ISD = 40 A VGS = –5 V VR = 800 V diF/dt = 1000 A/μs 90 ns 550 nC 13.5 A Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 5 Electrical Specifications 3.2 SiC Chopper Diode Ratings and Characteristics The following table shows the SiC chopper diode ratings and characteristics of MSC70SM120JCU2 device. Table 5 • SiC Chopper Diode Ratings and Characteristics Symbol Characteristics VRRM Peak repetitive reverse voltage IRM Reverse leakage current IF DC forward current VF Diode forward voltage VR=1200 V IF = 50 A Min Typ TJ = 25 °C 15 TJ = 175 °C 250 TC = 100 °C 50 TJ = 25 °C 1.5 TJ = 175 °C 2.1 Max Unit 1200 V 400 μA A 1.8 V QC Total capacitive charge VR = 600 V 224 nC C Total capacitance f = 1 MHz, VR = 400 V 246 pF f = 1 MHz, VR = 800 V 182 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.56 °C/W Thermal and Package Characteristics The following table shows the thermal and package characteristics of MSC70SM120JCU2 device. Table 6 • Thermal and Package Characteristics Symbol Characteristics Min Typ Max VISOL RMS isolation voltage, any terminal to case t =1 min, 50/60 Hz 2500 TSTG Storage temperature range –55 175 TJ Operating junction temperature range –55 175 TJOP Recommended junction temperature under switching conditions –55 TJmax–25 Torque Terminals and mounting screws Wt Package weight Unit V 1.1 29.2 Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 °C N.m g 6 Electrical Specifications 3.4 SiC MOSFET Performance Curves The following images show the SiC MOSFET performance curves of the MSC70SM120JCU2 device. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ=25 °C Figure 5 • Output Characteristics, TJ=175 °C Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 7 Electrical Specifications Figure 8 • Switching Energy vs. Rg Figure 9 • Switching Energy vs. Current Figure 10 • Capacitance vs. Drain Source Voltage Figure 11 • Gate Charge vs. Gate Source Voltage Figure 12 • Body Diode Characteristics, TJ=25 °C Figure 13 • 3rd Quadrant Characteristics, TJ=25 °C Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 8 Electrical Specifications Figure 14 • Body Diode Characteristics, TJ=175 °C Figure 15 • 3rd Quadrant Characteristics, TJ=175 °C Figure 16 • Operating Frequency vs. Drain Current Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 9 Electrical Specifications 3.5 SiC Diode Performance Curves The following images show the SiC diode performance curves of MSC70SM120JCU2 device. Figure 17 • Maximum Thermal Impedance Figure 18 • Forward Characteristics Figure 19 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 10 Package Specifications 4 Package Specifications The following section shows the package specification of MSC70SM120JCU2 device. 4.1 Package Outline Drawing The following image illustrates the package outline drawing of MSC70SM120JCU2 device. The dimensions are in millimeters and (inches). Figure 20 • Package Outline Drawing Microsemi Proprietary and Confidential MSC70SM120JCU2 Datasheet Revision 1.0 11 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 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