MSCDC100H120AG SiC Diode Full Bridge Power Module
1
Product Overview
This section shows the product overview for the MSCDC100H120AG device.
All ratings at Tj = 25°C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should
be followed.
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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1.1
Features
The following are key features of the MSCDC100H120AG device:
Silicon Carbide (SiC) Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
High blocking voltage
Low stray inductance
M5 power connectors
Aluminum nitride (AlN) substrate for improved thermal performance
1.2
Benefits
The following are benefits of the MSCDC100H120AG device:
Outstanding performance at high-frequency operation
Low losses
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
1.3
Applications
The MSCDC100H120AG device is designed for the following applications:
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High-speed rectifiers
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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2
Electrical Specifications
This section shows the electrical specifications for the MSCDC100H120AG device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode for the MSCDC100H120AG device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF
DC forward current
100
A
TC = 100 °C
The following table shows the thermal and package characteristics of the MSCDC100H120AG.
Table 2 • Thermal and Package Characteristics
Symbol
Characteristic
Min
VISOL
RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz
4000
TJ
Operating junction temperature range
–40
175
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
Torque
Mounting torque
Wt
2.2
Max
V
–40
125
To heatsink
M6
3
5
For terminals
M5
2
3.5
Package weight
Unit
°C
N.m
300
g
Electrical Performance
The following table shows the electrical characteristics per diode of the MSCDC100H120AG.
Table 3 • Electrical Characteristics Per Diode
Symbol
Characteristic
Test Conditions
VF
Diode forward voltage
IF = 100 A
IRM
Reverse leakage current
VR = 1200 V
Typ
Max
Unit
Tj = 25 °C
Min
1.5
1.8
V
Tj = 175 °C
2.1
Tj = 25 °C
30
400
µA
Tj = 175 °C
500
QC
Total capacitive charge
VR = 600 V
448
nC
C
Total capacitance
f = 1 MHz, VR = 400 V
492
pF
f = 1 MHz, VR = 800 V
364
RthJC
Junction to case thermal resistance
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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°C/W
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2.3
Performance Curves
This section shows the typical performance curves for the MSCDC100H120AG device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs Forward Voltage
Figure 3 • Capacitance vs. Reverse Voltage
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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3
Package Specifications
This section shows the package specifications for the MSCDC100H120AG device.
3.1
Package Outline Drawing
This section shows the package outline drawing of the MSCDC100H120AG device. The dimensions in the
following figure are in millimeters.
Figure 4 • Package Outline Drawing
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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MSCC-0344-DS-01000-1.0-0519 | May 2019 | Final
MSCC-0344-DS-01000-1.0-0519 MSCDC100H120AG Datasheet Revision 1.0
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