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MSCDC100H170AG
Datasheet
SiC Diode Full Bridge Power Module
December 2019
Contents
Contents
Revision History....................................................................................................................................1
1.1 Revision 1.0.........................................................................................................................................................1
2 Product Overview..............................................................................................................................2
Features....................................................................................................................................................................2
Benefits.....................................................................................................................................................................3
Applications..............................................................................................................................................................3
Electrical Specifications........................................................................................................................4
3.1 Absolute Maximum Ratings................................................................................................................................4
3.2 Electrical Performance........................................................................................................................................4
3.3 Typical Performance Curves................................................................................................................................6
4 Package Specification........................................................................................................................7
Package Outline Drawing..........................................................................................................................................7
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Revision History
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are listed
by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in December 2019. It is the first publication of this document.
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Product Overview
2
Product Overview
This section shows the product overview of the MSCDC100H170AG device.
All ratings at Tj = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
2.1
Features
The following are key features of the MSCDC100H170AG device:
• Silicon Carbide (SiC) Schottky Diode
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature independent switching behavior
◦ Positive temperature coefficient on VF
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Product Overview
•
•
•
•
2.2
High blocking voltage
Low stray inductance
M5 power connectors
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
The following are benefits of the MSCDC100H170AG device:
• Outstanding performance at high frequency operation
• Low losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS compliant
2.3
Applications
The MSCDC100H170AG device is designed for the following applications:
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High-speed rectifiers
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Electrical Specifications
3
Electrical Specifications
This section shows the electrical specifications of the MSCDC100H170AG device.
3.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per SiC diode of the MSCDC100H170AG device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Max Ratings
Unit
VRRM
Repetitive peak reverse voltage
1700
V
IF
DC forward current
100
A
TC = 125 °C
Table 2 • Thermal and Package Characteristics
Symbol
Characteristic
Min
VISOL
RMS isolation voltage, any terminal to case t =1 minute,
50 Hz/60 Hz
4000
TJ
Operating junction temperature range
–40
175
TJOP
Recommended junction temperature under switching
conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting
torque
Wt
3.2
Max
Unit
V
To heatsink
M6
3
5
For terminals
M5
2
3.5
Package weight
°C
N.m
300
g
Electrical Performance
The following table shows the thermal and package characteristics of the MSCDC100H170AG device.
Table 3 • Electrical Characteristics
Symbol
Characteristic
Test Conditions
VF
Diode forward voltage
IF = 100 A
IRM
Reverse leakage current
VR = 1700 V
Min
Typ
Max
Unit
Tj = 25 °C
1.5
1.8
V
Tj = 175 °C
2
Tj = 25 °C
100
400
µA
Tj = 175 °C
500
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Electrical Specifications
Symbol
Characteristic
Test Conditions
QC
Total capacitive charge
VR = 900 V
820
nC
C
Total capacitance
f = 1 MHz, VR = 600 V
600
pF
f = 1 MHz, VR = 900 V
500
RthJC
Min
Junction-to-case thermal resistance
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Max
0.174
Unit
°C/W
5
Electrical Specifications
3.3
Typical Performance Curves
This section shows the typical performance curves of the MSCDC100H70AG device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs. Forward Voltage
Figure 3 • Capacitance vs. Reverse Voltage
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Package Specification
4
Package Specification
This section shows the package specifications for the MSCDC100H170AG device.
4.1
Package Outline Drawing
The following image illustrates the MSCDC100H170AG device. The dimensions in the following figure are
in millimeters.
Figure 4 • Package Outline Drawing
Microsemi Proprietary and Confidential MSCDC100H170AG Datasheet Revision 1.0
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Legal
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