MSCDC150KK70D1PAG Dual Common Cathode SiC Diodes
1
Product Overview
This section shows the product overview of the MSCDC150KK70D1PAG device.
All ratings at Tj = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
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1.1
Features
The following are key features of the MSCDC150KK70D1PAG device:
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
M5 power connectors
Aluminum nitride (AlN) substrate for improved thermal performance
1.2
Benefits
The following are benefits of the MSCDC150KK70D1PAG device:
Stable temperature behavior
Low losses
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
1.3
Applications
The MSCDC150KK70D1PAG device is designed for the following applications:
Welding converters
Switched mode power supplies
Uninterruptible power supplies
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
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2
Electrical Specifications
This section shows the electrical specifications of the MSCDC150KK70D1PAG device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per SiC diode of the MSCDC150KK70D1PAG
device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VRRM
Repetitive peak reverse voltage
700
V
IF
DC forward current
150
A
TC = 65 °C
The following table shows the thermal and package characteristics of the MSCDC150KK70D1PAG device.
Table 2 • Thermal and Package Characteristics
Symbol
Characteristic
Min
VISOL
RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz
4000
TJ
Operating junction temperature range
–40
175
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
Wt
2.2
Max
Unit
V
°C
For terminals
M5
2
3.5
To heatsink
M6
3
5
N.m
160
g
Package weight
Electrical Performance
The following table shows the electrical characteristics per SiC diode of the MSCDC150KK70D1PAG
device.
Table 3 • Electrical Characteristics
Symbol
Characteristic
Test Conditions
VF
Diode forward voltage
IF = 150 A
IRM
Reverse leakage current
VR = 700 V
Typ
Max
Unit
Tj = 25 °C
Min
1.5
1.8
V
Tj = 175 °C
1.9
Tj = 25 °C
45
600
µA
Tj = 175 °C
750
QC
Total capacitive charge
VR = 400 V
399
nC
C
Total capacitance
f = 1 MHz, VR = 200 V
744
pF
f = 1 MHz, VR = 400 V
648
RthJC
Junction-to-case thermal resistance
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
0.318
°C/W
3
2.3
Typical Performance Curves
This section shows the typical performance curves of the MSCDC150KK70D1PAG device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs. Forward Voltage
Figure 3 • Capacitance vs. Reverse Voltage
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
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3
Package Specification
This section shows the package specifications for the MSCDC150KK70D1PAG device.
3.1
Package Outline Drawing
The package outline of the MSCDC150KK70D1PAG device is illustrated in this section. The dimensions in
the following figure are in millimeters.
Figure 4 • Package Outline Drawing
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
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MSCC-0344-DS-01032-1.0-0719 | July 2019 | Final
MSCC-0344-DS-01032-1.0-0719 MSCDC150KK70D1PAG Datasheet Revision 1.0
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