MSCDC200A170D1PAG

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MSCDC200A170D1PAG Datasheet Phase Leg SiC Diodes Power Module December 2019 Contents Contents Revision History....................................................................................................................................1 Revision 1.0...............................................................................................................................................................1 Product Overview.................................................................................................................................2 2.1 Features..............................................................................................................................................................2 2.2 Benefits...............................................................................................................................................................2 2.3 Applications........................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 Absolute Maximum Ratings................................................................................................................................4 3.2 Electrical Performance........................................................................................................................................4 3.3 Performance Curves...........................................................................................................................................5 Package Specifications..........................................................................................................................6 4.1 Package Outline Drawing....................................................................................................................................6 Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in December 2019. It is the first publication of this document. Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 1 Product Overview 2 Product Overview This section shows the product overview of the MSCDC200A170D1PAG device. All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. 2.1 Features The following are key features of the MSCDC200A170D1PAG device: • Silicon Carbide (SiC) Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • M5 power connectors • Aluminum nitride (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCDC200A170D1PAG device: Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 2 Product Overview • • • • • 2.3 Stable temperature behavior Low losses Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications The MSCDC200A170D1PAG device is designed for the following applications: • Uninterruptible power supply (UPS) • Switched mode power supplies • Welding converters • Motor control Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCDC200A170D1PAG device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per SiC diode of the MSCDC200A170D1PAG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VRRM Repetitive peak reverse voltage 1700 V IF DC forward current 200 A TC = 125 °C The following table shows the thermal and package characteristics of the MSCDC200A170D1PAG device. Table 2 • Thermal and Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 minute, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque Wt 3.2 Max Unit V For terminals M5 2 3.5 To heatsink M6 3 5 Package weight °C N.m 160 g Electrical Performance The following table shows the electrical characteristics per SiC diode of the MSCDC200A170D1PAG device. Table 3 • Electrical Characteristics Symbol Characteristic Test Conditions VF Diode forward voltage IF = 200 A IRM Reverse leakage current VR = 1700 V Min Typ Max Unit Tj = 25 °C 1.5 1.8 V Tj = 175 °C 2 Tj = 25 °C 200 800 µA Tj = 175 °C 1000 Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 4 Electrical Specifications Symbol Characteristic Test Conditions QC Total capacitive charge VR = 900 V 1640 nC C Total capacitance f = 1 MHz, VR = 600 V 1200 pF f = 1 MHz, VR = 900 V 1000 RthJC 3.3 Min Junction-to-case thermal resistance Typ Max 0.092 Unit °C/W Performance Curves This section shows the typical performance curves for the MSCDC200A170D1PAG device. Figure 1 • Maximum Thermal Impedance Figure 2 • Forward Characteristics Figure 3 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 5 Package Specifications 4 Package Specifications This section shows the package specifications of the MSCDC200A170D1PAG device. 4.1 Package Outline Drawing This section shows the package outline drawing of the MSCDC200A170D1PAG device. The dimensions in the following figure are in millimeters. Figure 4 • Package Outline Drawing Microsemi Proprietary and Confidential MSCDC200A170D1PAG Datasheet Revision 1.0 6 Legal Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199 Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. 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