MSCDC200A70D1PAG

MSCDC200A70D1PAG Phase Leg SiC Diodes Power Module 1 Product Overview This section shows the product overview of the MSCDC200A70D1PAG device. All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 1 1.1 Features The following are key features of the MSCDC200A70D1PAG device: Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independent switching behavior Positive temperature coefficient on VF M5 power connectors Aluminum nitride (AlN) substrate for improved thermal performance 1.2 Benefits The following are benefits of the MSCDC200A70D1PAG device: Stable temperature behavior Low losses Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant 1.3 Applications The MSCDC200A70D1PAG device is designed for the following applications: Welding converters Switched mode power supplies Uninterruptible power supplies MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 2 2 Electrical Specifications This section shows the electrical specifications of the MSCDC200A70D1PAG device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per SiC diode of the MSCDC200A70D1PAG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VRRM Repetitive peak reverse voltage 700 V IF DC forward current 200 A TC = 65 °C The following table shows the thermal and package characteristics of the MSCDC200A70D1PAG device. Table 2 • Thermal and Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque Wt 2.2 Max Unit V °C For terminals M5 2 3.5 To heatsink M6 3 5 N.m 160 g Package weight Electrical Performance The following table shows the electrical characteristics per SiC diode of the MSCDC200A70D1PAG device. Table 3 • Electrical Characteristics Symbol Characteristic Test Conditions VF Diode forward voltage IF = 200 A IRM Reverse leakage current VR = 700 V Typ Max Unit Tj = 25 °C Min 1.5 1.8 V Tj = 175 °C 1.9 Tj = 25 °C 60 800 µA Tj = 175 °C 1000 QC Total capacitive charge VR = 400 V 532 nC C Total capacitance f = 1 MHz, VR = 200 V 992 pF f = 1 MHz, VR = 400 V 864 RthJC Junction-to-case thermal resistance MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 0.241 °C/W 3 2.3 Typical Performance Curves This section shows the typical performance curves of the MSCDC200A70D1PAG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Capacitance vs. Reverse Voltage MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 4 3 Package Specification This section shows the package specifications for the MSCDC200A70D1PAG device. 3.1 Package Outline Drawing The package outline of the MSCDC200A70D1PAG device is illustrated in this section. The dimensions in the following figure are in millimeters. Figure 4 • Package Outline Drawing MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 5 Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. 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(Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. MSCC-0344-DS-01033-1.0-0719 | July 2019 | Final MSCC-0344-DS-01033-1.0-0719 MSCDC200A70D1PAG Datasheet Revision 1.0 6