MSCDC200H170AG

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MSCDC200H170AG Datasheet SiC Diode Full Bridge Power Module December 2019 Contents Contents Revision History....................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 Product Overview.................................................................................................................................2 2.1 Features..............................................................................................................................................................2 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 Absolute Maximum Ratings................................................................................................................................4 3.2 Electrical Performance........................................................................................................................................4 3.3 Typical Performance Curves ...............................................................................................................................6 Package Specifications..........................................................................................................................7 4.1 Package Outline Drawing ...................................................................................................................................7 Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in December 2019. It is the first publication of this document. Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview This section provides the product overview for the MSCDC200H170AG device. All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. 2.1 Features The following are key features of the MSCDC200H170AG device: • Silicon Carbide (SiC) Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • High blocking voltage • Low stray inductance • M5 power connectors • Aluminum nitride (AlN) substrate for improved thermal performance Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 2 Product Overview 2.2 Benefits The following are benefits of the MSCDC200H170AG device: • Outstanding performance at high frequency operation • Low losses • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • RoHS compliant 2.3 Applications The MSCDC200H170AG device is designed for the following applications: • Uninterruptible power supply (UPS) • Induction heating • Welding equipment • High-speed rectifiers Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section provides the electrical specifications for the MSCDC200H170AG device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per diode for the MSCDC200H170AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VRRM Repetitive peak reverse voltage 1700 V IF DC forward current 200 A TC = 125 °C The following table shows the thermal and package characteristics of the MSCDC200H170AG. Table 2 • Thermal and Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque Wt 3.2 Max Unit V To heatsink M6 3 5 For terminals M5 2 3.5 Package weight °C N.m 300 g Electrical Performance The following table shows the electrical characteristics per diode of the MSCDC200H170AG. Table 3 • Electrical Characteristics Symbol Characteristic Test Conditions VF Diode forward voltage IF = 200 A IRM Reverse leakage current VR = 1700 V Min Typ Max Unit Tj = 25 °C 1.5 1.8 V Tj = 175 °C 2 Tj = 25 °C 200 800 µA Tj = 175 °C 1000 Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 4 Electrical Specifications Symbol Characteristic Test Conditions QC Total capacitive charge VR = 900 V 1640 nC C Total capacitance f = 1 MHz, VR = 600 V 1200 pF f = 1 MHz, VR = 900 V 1000 RthJC Min Junction-to-case thermal resistance Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 Typ Max 0.092 Unit °C/W 5 Electrical Specifications 3.3 Typical Performance Curves This section shows the typical performance curves for the MSCDC200H170AG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 6 Package Specifications 4 Package Specifications This section shows the package specifications for the MSCDC200H170AG device. 4.1 Package Outline Drawing The following image illustrates the package outline of the MSCDC200H170AG device. The dimensions in the following figure are in millimeters. Figure 4 • Package Outline Drawing Microsemi Proprietary and Confidential MSCDC200H170AG Datasheet Revision 1.0 7 Legal Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199 Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. 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