MSCDC300A70AG

MSCDC300A70AG SiC Diode Phase Leg Power Module 1 Product Overview This section provides the product overview for the MSCDC300A70AG device. All ratings at Tj = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. MSCC-0344-DS-01020 Datasheet Revision 1.0 1 1.1 Features The following are key features of the MSCDC300A70AG device: Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independent switching behavior Positive temperature coefficient on VF Low stray inductance M5 power connectors High level of integration Aluminum nitride (AlN) substrate for improved thermal performance 1.2 Benefits The following are benefits of the MSCDC300A70AG device: Outstanding performance at high-frequency operation Low noise switching Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant 1.3 Applications The MSCDC300A70AG device is designed for the following applications: Uninterruptible power supply (UPS) Induction heating Welding equipment High-speed rectifiers MSCC-0344-DS-01020 Datasheet Revision 1.0 2 2 Electrical Specifications This section provides the electrical specifications for the MSCDC300A70AG device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per diode for the MSCDC300A70AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VRRM Repetitive peak reverse voltage 700 V IF DC forward current 300 A TC = 60 °C The following table shows the thermal and package characteristics of the MSCDC300A70AG. Table 2 • Thermal and Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature Torque Mounting torque Wt 2.2 Max V –40 125 To heatsink M6 3 5 For terminals M5 2 3.5 Package weight Unit °C N.m 300 g Electrical Performance The following table shows the electrical characteristics per diode of the MSCDC300A70AG. Table 3 • Electrical Characteristics Per Diode Symbol Characteristic Test Conditions VF Diode forward voltage IF = 300 A IRM Reverse leakage current VR = 700 V Typ Max Unit Tj = 25 °C Min 1.5 1.8 V Tj = 175 °C 1.9 Tj = 25 °C 0.09 1.2 mA Tj = 175 °C 1.5 QC Total capacitive charge VR = 400 V 798 nC C Total capacitance f = 1 MHz, VR = 200 V 1488 pF f = 1 MHz, VR = 400 V 1296 RthJC Junction-to-case thermal resistance MSCC-0344-DS-01020 Datasheet Revision 1.0 0.163 °C/W 3 2.3 Performance Curves This section shows the typical performance curves for the MSCDC300A70AG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Capacitance vs. Reverse Voltage MSCC-0344-DS-01020 Datasheet Revision 1.0 4 3 Package Specifications This section shows the package specifications for the MSCDC300A70AG device. 3.1 Package Outline Drawing The following drawing shows the package outline of the MSCDC300A70AG device. The dimensions in the following figure are in millimeters. Figure 4 • Package Outline Drawing MSCC-0344-DS-01020 Datasheet Revision 1.0 5 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. 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Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. MSCC-0344-DS-01020 | June 2019 | Final MSCC-0344-DS-01020 Datasheet Revision 1.0 6