MSCDC50H1701AG

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MSCDC50H1701AG Datasheet SiC Diode Full Bridge Power Module December 2019 Contents Contents Revision History....................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 2 Product Overview..............................................................................................................................2 Features....................................................................................................................................................................2 Benefits.....................................................................................................................................................................3 Applications..............................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 Absolute Maximum Ratings................................................................................................................................4 3.2 Electrical Performance........................................................................................................................................4 3.3 Typical Performance Curves................................................................................................................................6 Package Specification...........................................................................................................................7 4.1 Package Outline Drawing....................................................................................................................................7 Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in December 2019. It is the first publication of this document. Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview This section shows the product overview of the MSCDC50H1701AG device. All multiple inputs and outputs must be shorted together 1/2 ; 7/8 ; 9/10 ; 12/13 All ratings at Tj = 25°C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. 2.1 Features The following are key features of the MSCDC50H1701AG device: • Silicon Carbide (SiC) Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • High blocking voltage Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 2 Product Overview • Very low stray inductance • Aluminum nitrate (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCDC50H1701AG device: • Outstanding performance at high frequency operation • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low profile • RoHS compliant 2.3 Applications The MSCDC50H1701AG device is designed for the following applications: • Uninterruptible power supplies • Induction heating • Welding equipment • High-speed rectifiers Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCDC50H1701AG device. 3.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings per SiC diode of the MSCDC50H1701AG device Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VRRM Repetitive peak reverse voltage 1700 V IF DC forward current 50 A TC = 125 °C Table 2 • Thermal and Package Characteristics 3.2 Symbol Characteristics Min VISOL RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight 80 g To heatsink M4 Max Unit V °C Electrical Performance The following table shows the electrical characteristics per SiC diode of the MSCDC50H1701AG. Table 3 • Electrical Characteristics Symbol Characteristic Test Conditions VF Diode forward voltage IF = 50 A IRM QC Reverse leakage current Total capacitive charge VR = 1700 V Min Typ Max Unit Tj = 25 °C 1.5 1.8 V Tj = 175 °C 2 Tj = 25 °C 50 200 µA Tj = 175 °C 250 VR = 900 V Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 410 nC 4 Electrical Specifications Symbol Characteristic Test Conditions C Total capacitance f = 1 MHz, VR = 600 V 300 f = 1 MHz, VR = 900 V 250 RthJC Min Junction-to-case thermal resistance Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 Typ Max Unit pF 0.32 °C/W 5 Electrical Specifications 3.3 Typical Performance Curves This following section shows the typical performance curves of the MSCDC50H1701AG device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 6 Package Specification 4 Package Specification This section shows the package specification of the MSCDC50H1701AG device. 4.1 Package Outline Drawing The following image illustrates the package outline of the MSCDC50H1701AG device. The dimensions are in millimeters. Figure 4 • Package Outline Drawing Microsemi Proprietary and Confidential MSCDC50H1701AG Datasheet Revision 1.0 7 Legal Microchip Technology Inc. 2355 West Chandler Blvd. Chandler, Arizona, USA 85224-6199 Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. 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