MSCDC600A120AG SiC Diode Phase Leg Power Module
1
Product Overview
This section provides the product overview for the MSCDC600A120AG device.
All ratings at Tj = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
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1.1
Features
The following are key features of the MSCDC600A120AG device:
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
Low stray inductance
M5 power connectors
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance
1.2
Benefits
The following are benefits of the MSCDC600A120AG device:
Outstanding performance at high-frequency operation
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS compliant
1.3
Applications
The MSCDC600A120AG device is designed for the following applications:
Uninterruptible power supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
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2
Electrical Specifications
This section provides the electrical specifications for the MSCDC600A120AG device.
2.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode for the MSCDC600A120AG device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VRRM
Repetitive peak reverse voltage
1200
V
IF
DC forward current
600*
A
TC = 85 °C
* Specification of SiC device, but output current must be limited due to size of power connectors.
The following table shows the thermal and package characteristics of the MSCDC600A120AG.
Table 2 • Thermal and Package Characteristics
Symbol
Characteristic
Min
VISOL
RMS isolation voltage, any terminal to case t =1 minute, 50 Hz/60 Hz
4000
TJ
Operating junction temperature range
–40
175
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
Wt
2.2
Max
V
To heatsink
M6
3
5
For terminals
M5
2
3.5
Package weight
Unit
°C
N.m
300
g
Electrical Performance
The following table shows the electrical characteristics per diode of the MSCDC600A120AG.
Table 3 • Electrical Characteristics Per Diode
Symbol
Characteristic
Test Conditions
VF
Diode forward voltage
IF = 600 A
Min
Typ
Max
Unit
Tj = 25 °C
1.5
1.8
V
Tj = 175 °C
2.1
Tj = 25 °C
0.18
2.4
mA
Tj = 175 °C
3
IRM
Reverse leakage current
VR = 1200 V
QC
Total capacitive charge
VR = 600 V
2688
nC
C
Total capacitance
f = 1 MHz, VR = 400 V
2952
pF
f = 1 MHz, VR = 800 V
2184
RthJC
Junction-to-case thermal resistance
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°C/W
3
2.3
Performance Curves
This section shows the typical performance curves for the MSCDC600A120AG device.
Figure 1 • Maximum Transient Thermal Impedance
Figure 2 • Forward Current vs. Forward Voltage
Figure 3 • Capacitance vs. Reverse Voltage
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3
Package Specifications
This section shows the package specifications for the MSCDC600A120AG device.
3.1
Package Outline Drawing
The following drawing shows the package outline of the MSCDC600A120AG device. The dimensions in
the following figure are in millimeters.
Figure 4 • Package Outline Drawing
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MSCC-0344-DS-01014 | June 2019 | Final
MSCC-0344-DS-01014 Datasheet Revision 1.0
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