MSCM20AM058G

Discrete and Power Management Power Discrete and Module Portfolio www.microchip.com/DPM Contents High-Voltage SMPS Transistors Insulated Gate Bipolar Transistors (IGBTs)............................................................................................................................... 3 IGBTs—Punch-Thru................................................................................................................................................................ 4 IGBTs—Non-Punch-Thru........................................................................................................................................................ 5 IGBTs—Field Stop................................................................................................................................................................... 6 Silicon Carbide (SiC) MOSFETs............................................................................................................................................... 7 Power MOS 8™ MOSFETs/FREDFETs.................................................................................................................................... 8 Ultra-Fast, Low Gate Charge MOSFETs................................................................................................................................ 10 Super Junction MOSFETs..................................................................................................................................................... 11 Linear MOSFETs................................................................................................................................................................... 11 Diodes SiC Schottky Barrier Diodes.................................................................................................................................................. 12 Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes.......................................................................................... 14 High-Voltage RF MOSFETs..................................................................................................................................................... 16 High-Frequency RF MOSFETs................................................................................................................................................ 16 Drivers and Driver-RF MOSFET Hybrids................................................................................................................................. 17 Reference Design Kits............................................................................................................................................................. 17 Power Modules Power Modules Contents...................................................................................................................................................... 18 Standard Electrical Configurations......................................................................................................................................... 19 Packaging............................................................................................................................................................................. 20 Custom Power Modules........................................................................................................................................................ 21 Rugged Custom Power Modules.......................................................................................................................................... 23 Power Module Part Numbering System................................................................................................................................. 25 IGBT Power Modules............................................................................................................................................................ 26 Intelligent Power Modules..................................................................................................................................................... 29 MOSFET Power Modules...................................................................................................................................................... 30 Renewable Energy Power Modules....................................................................................................................................... 34 Power Modules with SiC Schottky Diodes............................................................................................................................. 36 SiC MOSFET Power Modules................................................................................................................................................ 38 Diode Power Modules........................................................................................................................................................... 39 Package Outlines.................................................................................................................................................................... 40 Power Module Outlines........................................................................................................................................................... 41 2 www.microsemi.com www.microchip.com Insulated Gate Bipolar Transistors (IGBTs) IGBTs From Microchip IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density Switch Mode Power Supply (SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. IGBT Switching Frequency Ranges (kHz, Hard Switched) 0 600V 20 40 60 80 100 120 140 160 Field Stop Power MOS 8™ PT Power MOS 8 NPT 650V Power MOS 8 PT 900V Field Stop 1200V Power MOS 7™ PT Power MOS 8 NPT Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more information. Standard Series Technology MOS 7™ 1200 PT Ultra-low gate charge MOS 8™ 600, 650, 900, 1200 PT, NPT Highest efficiency 600, 1200 Field Stop Field Stop Trench Gate Easy to Parallel Short Circuit Safe Operating Area (SOA) Voltage Ratings (V) • • Parameter Lowest conduction loss Product Options All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. Package options include TO-220, TO-247, T-MAX®, TO-264 and SOT-227. Customized products are available; contact the factory for details. Power Portfolio 3 IGBTs—Punch-Thru V(br)ces (V) POWER MOS 7™ • Ultra-low gate charge Combi with highspeed DQ diode 900 • • • Fast switching Highest efficiency 600 900 40 kHz Package Style 19 12 APT25GP120BG TO-247 3.3 46 24 15 APT35GP120BG TO-247 3.3 54 29 18 APT45GP120BG TO-247 3.3 34 28 18 APT45GP120J ISOTOP 3.3 91 42 24 APT75GP120B2G T-MAX® 3.3 57 40 23 APT75GP120J ISOTOP 20 kHz 40 kHz 3.3 33 19 12 APT25GP120BDQ1G TO-247 3.3 46 24 15 APT35GP120B2DQ2G T-MAX 3.3 54 29 18 APT45GP120B2DQ2G T-MAX 3.3 34 28 18 APT45GP120JDQ2 ISOTOP® 3.3 57 40 23 APT75GP120JDQ3 ISOTOP 50 kHz 80 kHz 2 36 21 17 APT36GA60B TO-247 or D3PAK 2 44 26 20 APT44GA60B TO-247 or D3PAK 2 54 30 23 APT54GA60B TO-247 or D3PAK 2 68 35 27 APT68GA60B TO-247 or D3PAK 2 80 40 31 APT80GA60B TO-247 or D3PAK 2 102 51 39 APT102GA60B2 T-MAX or TO-264 25 kHz 50 kHz 2.5 35 17 10 APT35GA90B TO-247 or D3PAK 2.5 43 21 13 APT43GA90B TO-247 or D3PAK 2.5 64 29 19 APT64GA90B TO-247 or D3PAK 2.5 80 34 23 APT80GA90B TO-247 or D3PAK 50 kHz 80 kHz Combi (IGBT & "DQ" FRED) Combi with highspeed DQ diode 20 kHz Part Number 33 Single 600 Maximum Ic (A) at Frequency 3.3 Combi (IGBT & "DQ" FRED) 1200 POWER MOS 8™ Ic2 (A) 100°C Single 1200 • Vce(on) (V) Typ 25°C 2 36 21 17 APT36GA60BD15 TO-247 or D3PAK 2 44 26 20 APT44GA60BD30 TO-247 or D3PAK 2 54 30 23 APT54GA60BD30 TO-247 or D3PAK 2 60 48 36 APT60GA60JD60 ISOTOP 2 68 35 27 APT68GA60B2D40 T-MAX or TO-264 2 80 40 31 APT80GA60LD40 TO-264 25 kHz 50 kHz 2.5 27 14 8 APT27GA90BD15 TO-247 or D3PAK 2.5 35 17 10 APT35GA90BD15 TO-247 or D3PAK 2.5 43 21 13 APT43GA90BD30 TO-247 or D3PAK 2.5 46 33 21 APT46GA90JD40 ISOTO 2.5 64 29 19 APT64GA90B2D30 T-MAX or TO-264 2.5 80 34 23 APT80GA90LD40 TO-264 TO-247[B] D3PAK[S] T-MAX®[B2] TO-264[L] ISOTOP®[J] SOT-227 C Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. G Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch. 4 www.microsemi.com E www.microchip.com IGBTs—Non-Punch-Thru V(br)ces (V) POWER MOS 8™ Vce(on) (V) Typ 25°C Single 1.9 650 1.9 1.9 1200 • • High-speed switching Low switching losses Easy to parallel 45 70 95 150 kHz 200 kHz 31 25 100 kHz 150 kHz 52 39 50 kHz 100 kHz 69 41 50 kHz 80 kHz Part Number Package Style APT45GR65B TO-247 APT70GR65B TO-247 APT95GR65B2 T-MAX® 25 25 21 APT25GR120B TO-247 2.5 25 25 21 APT25GR120S D3PAK 2.5 40 38 28 APT40GR120B TO-247 2.5 40 38 28 APT40GR120S D3PAK 2.5 50 48 36 APT50GR120B2 T-MAX 2.5 50 48 36 APT50GR120L TO-264 25 kHz 50 kHz 70 66 42 APT70GR120B2 T-MAX 2.5 70 66 42 APT70GR120L TO-264 2.5 70* 42 30 APT70GR120J ISOTOP® 2.5 85 72 46 APT85GR120B2 T-MAX 2.5 85 72 46 APT85GR120L TO-264 2.5 85* 46 31 APT85GR120J ISOTOP 150 kHz 200 kHz 31 25 APT45GR65BSCD10 TO-247 (SiC SBD) 100 kHz 150 kHz 52 39 APT70GR65B2SCD30 T-MAX (SiC SBD) 50 kHz 80 kHz Combi (IGBT & Diode) 1.9 45 650 1.9 1200 Maximum Ic (A) at Frequency 2.5 2.5 • Ic2 (A) 100°C 70 2.5 25 25 21 APT25GR120BD15 TO-247 (DQ) 2.5 25 25 21 APT25GR120SD15 D3PAK (DQ) 2.5 25 25 21 APT25GR120BSCD10 TO-247 (SiC SBD) 2.5 25 25 21 APT25GR120SSCD10 D3PAK (SiC SBD) 2.5 40 38 28 APT40GR120B2D30 T-MAX (DQ) 2.5 40 38 28 APT40GR120B2SCD10 T-MAX (SiC SBD) 25 kHz 50 kHz 2.5 50* 42 32 APT50GR120JD30 ISOTOP (DQ) 2.5 70* 42 30 APT70GR120JD60 ISOTOP (DQ) 2.5 85* 46 31 APT85GR120JD60 ISOTOP (DQ) TO-247[B] D3PAK[S] T-MAX®[B2] TO-264[L] ISOTOP®[J] SOT-227 C G E Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch. Power Portfolio 5 IGBTs—Field Stop V(br)ces (V) Field Stop 1200 Trench technology • • Easy paralleling Short circuit rated Lowest conduction loss Combi with highspeed DQ diode Ic2 (A) 100°C Single 600 • • • Vce(on) (V) Typ 25°C 1200 15 kHz 30 kHz Part Number Package Style 1.5 24 15 10 APT20GN60BG TO-247 1.5 37 20 14 APT30GN60BG TO-247 1.5 64 30 21 APT50GN60BG TO-247 1.5 93 42 30 APT75GN60BG TO-247 1.5 123 75 47 APT150GN60J ISOTOP® 1.5 135 54 39 APT100GN60B2G T-MAX® 1.5 190 79 57 APT150GN60B2G T-MAX 1.5 230 103 75 APT200GN60B2G T-MAX 1.5 158 100 66 APT200GN60J ISOTOP 10 kHz 20 kHz 1.7 33 19 13 APT25GN120BG TO-247 or D3PAK 1.7 46 24 17 APT35GN120BG TO-247 1.7 66 32 22 APT50GN120B2G T-MAX 1.7 70 44 27 APT100GN120J ISOTOP 1.7 99 45 30 APT75GN120B2G T-MAX or TO-264 1.7 120 58 38 APT100GN120B2G T-MAX 1.7 99 60 36 APT150GN120J ISOTOP 15 kHz 30 kHz Combi (IGBT & "DQ" FRED) 600 Maximum Ic (A) at Frequency TO-247[B] D3PAK[S] T-MAX®[B2] TO-264[L] 1.5 24 15 10 APT20GN60BDQ1G TO-247 1.5 37 20 14 APT30GN60BDQ2G TO-247 1.5 64 30 21 APT50GN60BDQ2G TO-247 1.5 93 42 30 APT75GN60LDQ3G TO-264 1.5 123 75 47 APT150GN60JDQ4 ISOTOP 1.5 135 54 39 APT100GN60LDQ4G TO-264v 1.5 190 79 57 APT150GN60LDQ4G TO-264 1.5 158 100 66 APT200GN60JDQ4 ISOTOP 10 kHz 20 kHz 1.7 22 14 10 APT15GN120BDQ1G TO-247 or D3PAK 1.7 33 19 13 APT25GN120B2DQ2G T-MAX 1.7 46 24 17 APT35GN120L2DQ2G 264-MAX™ 1.7 57 36 22 APT75GN120JDQ3 ISOTOP 1.7 66 32 22 APT50GN120L2DQ2G 264-MAX 1.7 70 44 27 APT100GN120JDQ4 ISOTOP 1.7 99 60 36 APT150GN120JDQ4 ISOTOP 264-MAX™[L2] ISOTOP®[J] SOT-227 C G E Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch. 6 www.microsemi.com www.microchip.com Silicon Carbide (SiC) MOSFETs Silicon Carbide (SiC) MOSFETs Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650V) applications. Target markets and applications include: • Commercial aviation: actuation, air conditioning, power distribution • Industrial: Motor drives, welding, Uniterruptible Power Supply (UPS), SMPS, induction heating • Transportation/automotive: Electric Vehicle (EV) battery charger, Hybrid Electric Vehicle (HEV) powertrain, DC–DC converter, energy recovery Part Number MSC090SMA070B Voltage (V) Id (Max at 25°C) (A) 60 700 35 MSC035SMA070S MSC015SMA070B Package 20 90 MSC060SMA070B MSC035SMA070B SiC MOSFET and SiC Schottky barrier diode product lines from Microchip increase your system efficiency over silicon MOSFET and IGBT solutions while lowering your total cost of ownership by enabling downsized systems and smaller/lower cost cooling. Rds(on) (mΩ) MSC090SMA070S MSC060SMA070S • Smart energy: PhotoVoltaic (PV) inverter, wind turbine • Medical: MRI power supply, x-Ray power supply • Defense and oil drilling: motor drives, auxiliary power supplies 15 TO-247 19 D3PAK 35 TO-247 33 D3PAK 70 TO-247 62 D3PAK 141 TO-247 126 D3PAK 33 TO-247 32 D3PAK MSC080SMA120J 26 SOT-227 MSC040SMA120B 67 TO-247 MSC015SMA070S MSC080SMA120B 80 MSC080SMA120S MSC040SMA120S 1200 40 MSC040SMA120J MSC025SMA120B 25 MSC025SMA120S MSC025SMA120J MSC750SMA170B MSC750SMA170S MSC045SMA170B 750 1700 45 MSC045SMA170S 64 D3PAK 53 SOT-227 103 TO-247 94 D3PAK 77 SOT-227 5.0 TO-247 4.4 D3PAK 55 TO-247 50 D3PAK TO-247 TO-268 D3PAK SiC MOSFET Features and Benefits Characteristics Results Benefits Higher efficiency Breakdown field (MV/cm) Lower on-resistance Electron sat. velocity (cm/s) Faster switching Size reduction Bandgap energy (ev) Higher junction temperature Improved cooling Thermal conductivity (W/m.K) Higher power density Higher current capabilities Positive temperature coefficient Self regulation Easy paralleling Advantages Versus Competition • • • • • Lowest conduction losses at high temperature Low switching losses High short circuit withstand rating Low gate resistance High avalanche rating: UIS and Repetitive UIS Power Portfolio • Patented SiC technology • SiC is the perfect technology to address high-frequency and high-power-density applications • Lower power losses • Easier cooling, downsized system and higher reliability 7 Power MOS 8™ MOSFETs/FREDFETs BVDSS (V) Rds(on) Max (Ω) Id (A) MOSFET Part Number 8 APT7M120B 14 APT14M120B 2.40 2.10 1.20 1.10 7 APT7F120B TO-247 or D3PAK TO-247 APT13F120B TO-247 or D3PAK TO-247 APT22F120B2 0.58 27 APT26F120B2 T-MAX or TO-264 0.58 18 APT17F120J ISOTOP® 0.63 24 APT24M120B2 T-MAX® or TO-264 29 APT28M120B2 T-MAX or TO-264 0.53 19 APT19M120J ISOTOP 35 APT34M120J 8 APT8M100B 33 2.00 1.80 1.60 1.40 9 0.88 14 APT14M100B 18 APT18M100B 0.78 0.70 TO-247 9 APT9F100B TO-247 or D3PAK 14 APT14F100B TO-247 or D3PAK TO-247 TO-247 or D3PAK APT17F100B TO-247 or D3PAK TO-247 APT29F100B2 T-MAX or TO-264 APT19F100J ISOTOP 35 APT34F100B2 T-MAX or TO-264 21 APT21M100J 23 APT22F100J 37 APT37M100B2 T-MAX or TO-264 25 APT25M100J ISOTOP 45 APT45M100J 13 APT12M80B 0.38 0.33 0.33 0.20 42 0.90 0.58 APT41F100J ISOTOP ISOTOP 12 APT11F80B TO-247 or D3PAK 18 APT17F80B TO-247 or D3PAK TO-247 APT18M80B 25 APT24M80B 43 APT41M80B2 0.19 49 APT48M80B2 T-MAX or TO-264 0.19 33 APT32M80J ISOTOP 60 APT58M80J 0.39 0.21 0.21 0.11 0.10 TO-247 or D3PAK 23 0.24 APT22F80B www.microsemi.com TO-264[L] TO-247 or D3PAK TO-247 or D3PAK 41 APT38F80B2 T-MAX or TO-264 47 APT44F80B2 T-MAX or TO-264 31 APT29F80J 57 APT53F80J ISOTOP ISOTOP ISOTOP Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. 8 T-MAX®[B2] ISOTOP 19 0.43 D3PAK[S] TO-247 20 32 0.53 APT7F100B APT31M100B2 0.38 0.80 7 30 0.44 ISOTOP ISOTOP 17 0.44 0.18 APT32F120J APT9M100B 0.98 TO-247[B] T-MAX or TO-264 0.53 0.29 800 Package Style 23 0.32 1000 FREDFET Part Number 14 0.70 1200 Id (A) ISOTOP®[J] SOT-227 (Isolated Base) www.microchip.com Power MOS 8 MOSFETs/FREDFETs BVDSS (V) 600 500 Rds(on) Max (Ω) Id (A) FREDFET Part Number Package Style 0.37 19 APT18F60B TO-247 or D3PAK 0.29 24 APT23F60B TO-247 or D3PAK Id (A) MOSFET Part Number 0.19 36 APT34M60B 36 APT34F60B TO-247 0.15 45 APT43M60B2 45 APT43F60B2 T-MAX® or TO-264 0.15 31 APT30M60J 31 APT30F60J ISOTOP® 0.11 60 APT56M60B2 60 APT56F60B2 T-MAX or TO-264 0.11 42 APT39M60J 42 APT39F60J ISOTOP 0.09 70 APT66M60B2 70 APT66F60B2 T-MAX or TO-264 0.09 49 APT47M60J 49 APT47F60J ISOTOP 0.055 84 APT80M60J 84 APT80F60J ISOTOP 0.24 24 APT24F50B TO-247 or D3PAK 0.19 30 APT30F50B TO-247 or D3PAK 0.15 37 APT37F50B TO-247 or D3PAK 0.13 43 APT42F50B TO-247 or D3PAK 0.10 56 APT56M50B2 56 APT56F50B2 T-MAX or TO-264 0.10 38 APT38M50J 38 APT38F50J ISOTOP 0.075 75 APT75M50B2 75 APT75F50B2 T-MAX or TO-264 0.075 51 APT51M50J 51 APT51F50J ISOTOP 0.062 84 APT84M50B2 84 APT84F50B2 T-MAX or TO-264 0.062 58 APT58M50J 58 APT58F50J ISOTOP 0.036 103 APT100M50J 103 APT100F50J ISOTOP TO-247[B] D3PAK[S] T-MAX [B2] Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Low-Voltage Power MOS V® MOSFETs/FREDFETs BVDSS (V) 300 200 Rds(on) Max (Ω) Id (A) MOSFET Part Number 0.085 40 APT30M85BVRG 0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or D3PAK 0.040 70 APT30M40JVR 70 APT30M40JVFR ISOTOP® 0.019 130 APT30M19JVR 130 APT30M19JVFR ISOTOP 0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO-247 0.038 67 APT20M38BVRG TO-247 or D3PAK 0.022 100 APT20M22B2VRG T-MAX® or TO-264 0.011 175 APT20M11JVR Id (A) FREDFET Part Number Package Style TO-247 175 APT20M11JVFR ISOTOP Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number. Power Portfolio TO-264[L] ISOTOP®[J] SOT-227 (Isolated Base) 9 Ultra-Fast, Low Gate Charge MOSFETs For 250 kHz–2 MHz Switching Applications The ultra-fast, low gate charge MOSFET family combines the lowest gate charge available in the industry with Microchip’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very-low switching losses. The metal gate structure and the layout of these chips provide an internal Series Gate Resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. These devices are ideally suited for high-frequency and pulsed high-voltage applications. Typical Applications • • • • Features Class D amplifiers up to 2 MHz High-voltage pulsed DC AM transmitters Plasma deposition/etch • Series gate resistance (RG)