Discrete and Power Management
Power Discrete and Module Portfolio
www.microchip.com/DPM
Contents
High-Voltage SMPS Transistors
Insulated Gate Bipolar Transistors (IGBTs)............................................................................................................................... 3
IGBTs—Punch-Thru................................................................................................................................................................ 4
IGBTs—Non-Punch-Thru........................................................................................................................................................ 5
IGBTs—Field Stop................................................................................................................................................................... 6
Silicon Carbide (SiC) MOSFETs............................................................................................................................................... 7
Power MOS 8™ MOSFETs/FREDFETs.................................................................................................................................... 8
Ultra-Fast, Low Gate Charge MOSFETs................................................................................................................................ 10
Super Junction MOSFETs..................................................................................................................................................... 11
Linear MOSFETs................................................................................................................................................................... 11
Diodes
SiC Schottky Barrier Diodes.................................................................................................................................................. 12
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes.......................................................................................... 14
High-Voltage RF MOSFETs..................................................................................................................................................... 16
High-Frequency RF MOSFETs................................................................................................................................................ 16
Drivers and Driver-RF MOSFET Hybrids................................................................................................................................. 17
Reference Design Kits............................................................................................................................................................. 17
Power Modules
Power Modules Contents...................................................................................................................................................... 18
Standard Electrical Configurations......................................................................................................................................... 19
Packaging............................................................................................................................................................................. 20
Custom Power Modules........................................................................................................................................................ 21
Rugged Custom Power Modules.......................................................................................................................................... 23
Power Module Part Numbering System................................................................................................................................. 25
IGBT Power Modules............................................................................................................................................................ 26
Intelligent Power Modules..................................................................................................................................................... 29
MOSFET Power Modules...................................................................................................................................................... 30
Renewable Energy Power Modules....................................................................................................................................... 34
Power Modules with SiC Schottky Diodes............................................................................................................................. 36
SiC MOSFET Power Modules................................................................................................................................................ 38
Diode Power Modules........................................................................................................................................................... 39
Package Outlines.................................................................................................................................................................... 40
Power Module Outlines........................................................................................................................................................... 41
2
www.microsemi.com
www.microchip.com
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs From Microchip
IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density Switch Mode Power Supply
(SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents
the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six
product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop.
IGBT Switching Frequency Ranges (kHz, Hard Switched)
0
600V
20
40
60
80
100
120
140
160
Field Stop
Power MOS 8™ PT
Power MOS 8 NPT
650V
Power MOS 8 PT
900V
Field Stop
1200V
Power MOS 7™ PT
Power MOS 8 NPT
Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more
information.
Standard Series
Technology
MOS 7™
1200
PT
Ultra-low gate charge
MOS 8™
600, 650, 900, 1200
PT, NPT
Highest efficiency
600, 1200
Field Stop
Field Stop Trench Gate
Easy to Parallel
Short Circuit Safe
Operating Area (SOA)
Voltage Ratings (V)
•
•
Parameter
Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX®, TO-264 and SOT-227. Customized products are available; contact the factory
for details.
Power Portfolio
3
IGBTs—Punch-Thru
V(br)ces (V)
POWER MOS 7™
•
Ultra-low gate
charge
Combi with highspeed DQ diode
900
•
•
•
Fast switching
Highest efficiency
600
900
40 kHz
Package
Style
19
12
APT25GP120BG
TO-247
3.3
46
24
15
APT35GP120BG
TO-247
3.3
54
29
18
APT45GP120BG
TO-247
3.3
34
28
18
APT45GP120J
ISOTOP
3.3
91
42
24
APT75GP120B2G
T-MAX®
3.3
57
40
23
APT75GP120J
ISOTOP
20 kHz
40 kHz
3.3
33
19
12
APT25GP120BDQ1G
TO-247
3.3
46
24
15
APT35GP120B2DQ2G
T-MAX
3.3
54
29
18
APT45GP120B2DQ2G
T-MAX
3.3
34
28
18
APT45GP120JDQ2
ISOTOP®
3.3
57
40
23
APT75GP120JDQ3
ISOTOP
50 kHz
80 kHz
2
36
21
17
APT36GA60B
TO-247 or D3PAK
2
44
26
20
APT44GA60B
TO-247 or D3PAK
2
54
30
23
APT54GA60B
TO-247 or D3PAK
2
68
35
27
APT68GA60B
TO-247 or D3PAK
2
80
40
31
APT80GA60B
TO-247 or D3PAK
2
102
51
39
APT102GA60B2
T-MAX or TO-264
25 kHz
50 kHz
2.5
35
17
10
APT35GA90B
TO-247 or D3PAK
2.5
43
21
13
APT43GA90B
TO-247 or D3PAK
2.5
64
29
19
APT64GA90B
TO-247 or D3PAK
2.5
80
34
23
APT80GA90B
TO-247 or D3PAK
50 kHz
80 kHz
Combi (IGBT
& "DQ" FRED)
Combi with highspeed DQ diode
20 kHz
Part
Number
33
Single
600
Maximum Ic (A)
at Frequency
3.3
Combi (IGBT
& "DQ" FRED)
1200
POWER MOS 8™
Ic2 (A)
100°C
Single
1200
•
Vce(on) (V)
Typ 25°C
2
36
21
17
APT36GA60BD15
TO-247 or D3PAK
2
44
26
20
APT44GA60BD30
TO-247 or D3PAK
2
54
30
23
APT54GA60BD30
TO-247 or D3PAK
2
60
48
36
APT60GA60JD60
ISOTOP
2
68
35
27
APT68GA60B2D40
T-MAX or TO-264
2
80
40
31
APT80GA60LD40
TO-264
25 kHz
50 kHz
2.5
27
14
8
APT27GA90BD15
TO-247 or D3PAK
2.5
35
17
10
APT35GA90BD15
TO-247 or D3PAK
2.5
43
21
13
APT43GA90BD30
TO-247 or D3PAK
2.5
46
33
21
APT46GA90JD40
ISOTO
2.5
64
29
19
APT64GA90B2D30
T-MAX or TO-264
2.5
80
34
23
APT80GA90LD40
TO-264
TO-247[B]
D3PAK[S]
T-MAX®[B2]
TO-264[L]
ISOTOP®[J]
SOT-227
C
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
G
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
4
www.microsemi.com
E
www.microchip.com
IGBTs—Non-Punch-Thru
V(br)ces (V)
POWER MOS 8™
Vce(on) (V)
Typ 25°C
Single
1.9
650
1.9
1.9
1200
•
•
High-speed
switching
Low switching
losses
Easy to parallel
45
70
95
150 kHz
200 kHz
31
25
100 kHz
150 kHz
52
39
50 kHz
100 kHz
69
41
50 kHz
80 kHz
Part
Number
Package
Style
APT45GR65B
TO-247
APT70GR65B
TO-247
APT95GR65B2
T-MAX®
25
25
21
APT25GR120B
TO-247
2.5
25
25
21
APT25GR120S
D3PAK
2.5
40
38
28
APT40GR120B
TO-247
2.5
40
38
28
APT40GR120S
D3PAK
2.5
50
48
36
APT50GR120B2
T-MAX
2.5
50
48
36
APT50GR120L
TO-264
25 kHz
50 kHz
70
66
42
APT70GR120B2
T-MAX
2.5
70
66
42
APT70GR120L
TO-264
2.5
70*
42
30
APT70GR120J
ISOTOP®
2.5
85
72
46
APT85GR120B2
T-MAX
2.5
85
72
46
APT85GR120L
TO-264
2.5
85*
46
31
APT85GR120J
ISOTOP
150 kHz
200 kHz
31
25
APT45GR65BSCD10
TO-247 (SiC SBD)
100 kHz
150 kHz
52
39
APT70GR65B2SCD30
T-MAX (SiC SBD)
50 kHz
80 kHz
Combi
(IGBT & Diode)
1.9
45
650
1.9
1200
Maximum Ic (A)
at Frequency
2.5
2.5
•
Ic2 (A)
100°C
70
2.5
25
25
21
APT25GR120BD15
TO-247 (DQ)
2.5
25
25
21
APT25GR120SD15
D3PAK (DQ)
2.5
25
25
21
APT25GR120BSCD10
TO-247 (SiC SBD)
2.5
25
25
21
APT25GR120SSCD10
D3PAK (SiC SBD)
2.5
40
38
28
APT40GR120B2D30
T-MAX (DQ)
2.5
40
38
28
APT40GR120B2SCD10
T-MAX (SiC SBD)
25 kHz
50 kHz
2.5
50*
42
32
APT50GR120JD30
ISOTOP (DQ)
2.5
70*
42
30
APT70GR120JD60
ISOTOP (DQ)
2.5
85*
46
31
APT85GR120JD60
ISOTOP (DQ)
TO-247[B]
D3PAK[S]
T-MAX®[B2]
TO-264[L]
ISOTOP®[J]
SOT-227
C
G
E
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
Power Portfolio
5
IGBTs—Field Stop
V(br)ces (V)
Field Stop
1200
Trench technology
•
•
Easy paralleling
Short circuit rated
Lowest conduction
loss
Combi with highspeed DQ diode
Ic2 (A)
100°C
Single
600
•
•
•
Vce(on) (V)
Typ 25°C
1200
15 kHz
30 kHz
Part
Number
Package
Style
1.5
24
15
10
APT20GN60BG
TO-247
1.5
37
20
14
APT30GN60BG
TO-247
1.5
64
30
21
APT50GN60BG
TO-247
1.5
93
42
30
APT75GN60BG
TO-247
1.5
123
75
47
APT150GN60J
ISOTOP®
1.5
135
54
39
APT100GN60B2G
T-MAX®
1.5
190
79
57
APT150GN60B2G
T-MAX
1.5
230
103
75
APT200GN60B2G
T-MAX
1.5
158
100
66
APT200GN60J
ISOTOP
10 kHz
20 kHz
1.7
33
19
13
APT25GN120BG
TO-247 or D3PAK
1.7
46
24
17
APT35GN120BG
TO-247
1.7
66
32
22
APT50GN120B2G
T-MAX
1.7
70
44
27
APT100GN120J
ISOTOP
1.7
99
45
30
APT75GN120B2G
T-MAX or TO-264
1.7
120
58
38
APT100GN120B2G
T-MAX
1.7
99
60
36
APT150GN120J
ISOTOP
15 kHz
30 kHz
Combi (IGBT
& "DQ" FRED)
600
Maximum Ic (A)
at Frequency
TO-247[B]
D3PAK[S]
T-MAX®[B2]
TO-264[L]
1.5
24
15
10
APT20GN60BDQ1G
TO-247
1.5
37
20
14
APT30GN60BDQ2G
TO-247
1.5
64
30
21
APT50GN60BDQ2G
TO-247
1.5
93
42
30
APT75GN60LDQ3G
TO-264
1.5
123
75
47
APT150GN60JDQ4
ISOTOP
1.5
135
54
39
APT100GN60LDQ4G
TO-264v
1.5
190
79
57
APT150GN60LDQ4G
TO-264
1.5
158
100
66
APT200GN60JDQ4
ISOTOP
10 kHz
20 kHz
1.7
22
14
10
APT15GN120BDQ1G
TO-247 or D3PAK
1.7
33
19
13
APT25GN120B2DQ2G
T-MAX
1.7
46
24
17
APT35GN120L2DQ2G
264-MAX™
1.7
57
36
22
APT75GN120JDQ3
ISOTOP
1.7
66
32
22
APT50GN120L2DQ2G
264-MAX
1.7
70
44
27
APT100GN120JDQ4
ISOTOP
1.7
99
60
36
APT150GN120JDQ4
ISOTOP
264-MAX™[L2]
ISOTOP®[J]
SOT-227
C
G
E
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
6
www.microsemi.com
www.microchip.com
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) is the ideal technology for higher switching frequency, higher efficiency, and higher power (>650V)
applications. Target markets and applications include:
• Commercial aviation: actuation, air conditioning,
power distribution
• Industrial: Motor drives, welding, Uniterruptible Power Supply
(UPS), SMPS, induction heating
• Transportation/automotive: Electric Vehicle (EV) battery
charger, Hybrid Electric Vehicle (HEV) powertrain, DC–DC
converter, energy recovery
Part Number
MSC090SMA070B
Voltage (V)
Id (Max at 25°C) (A)
60
700
35
MSC035SMA070S
MSC015SMA070B
Package
20
90
MSC060SMA070B
MSC035SMA070B
SiC MOSFET and SiC Schottky barrier diode product lines
from Microchip increase your system efficiency over silicon
MOSFET and IGBT solutions while lowering your total cost of
ownership by enabling downsized systems and smaller/lower
cost cooling.
Rds(on) (mΩ)
MSC090SMA070S
MSC060SMA070S
• Smart energy: PhotoVoltaic (PV) inverter, wind turbine
• Medical: MRI power supply, x-Ray power supply
• Defense and oil drilling: motor drives, auxiliary power
supplies
15
TO-247
19
D3PAK
35
TO-247
33
D3PAK
70
TO-247
62
D3PAK
141
TO-247
126
D3PAK
33
TO-247
32
D3PAK
MSC080SMA120J
26
SOT-227
MSC040SMA120B
67
TO-247
MSC015SMA070S
MSC080SMA120B
80
MSC080SMA120S
MSC040SMA120S
1200
40
MSC040SMA120J
MSC025SMA120B
25
MSC025SMA120S
MSC025SMA120J
MSC750SMA170B
MSC750SMA170S
MSC045SMA170B
750
1700
45
MSC045SMA170S
64
D3PAK
53
SOT-227
103
TO-247
94
D3PAK
77
SOT-227
5.0
TO-247
4.4
D3PAK
55
TO-247
50
D3PAK
TO-247
TO-268
D3PAK
SiC MOSFET Features and Benefits
Characteristics
Results
Benefits
Higher efficiency
Breakdown field (MV/cm)
Lower on-resistance
Electron sat. velocity (cm/s)
Faster switching
Size reduction
Bandgap energy (ev)
Higher junction temperature
Improved cooling
Thermal conductivity (W/m.K)
Higher power density
Higher current capabilities
Positive temperature coefficient
Self regulation
Easy paralleling
Advantages Versus Competition
•
•
•
•
•
Lowest conduction losses at high temperature
Low switching losses
High short circuit withstand rating
Low gate resistance
High avalanche rating: UIS and Repetitive UIS
Power Portfolio
• Patented SiC technology
• SiC is the perfect technology to address high-frequency
and high-power-density applications
• Lower power losses
• Easier cooling, downsized system and higher reliability
7
Power MOS 8™ MOSFETs/FREDFETs
BVDSS (V)
Rds(on)
Max (Ω)
Id (A)
MOSFET
Part Number
8
APT7M120B
14
APT14M120B
2.40
2.10
1.20
1.10
7
APT7F120B
TO-247 or D3PAK
TO-247
APT13F120B
TO-247 or D3PAK
TO-247
APT22F120B2
0.58
27
APT26F120B2
T-MAX or TO-264
0.58
18
APT17F120J
ISOTOP®
0.63
24
APT24M120B2
T-MAX® or TO-264
29
APT28M120B2
T-MAX or TO-264
0.53
19
APT19M120J
ISOTOP
35
APT34M120J
8
APT8M100B
33
2.00
1.80
1.60
1.40
9
0.88
14
APT14M100B
18
APT18M100B
0.78
0.70
TO-247
9
APT9F100B
TO-247 or D3PAK
14
APT14F100B
TO-247 or D3PAK
TO-247
TO-247 or D3PAK
APT17F100B
TO-247 or D3PAK
TO-247
APT29F100B2
T-MAX or TO-264
APT19F100J
ISOTOP
35
APT34F100B2
T-MAX or TO-264
21
APT21M100J
23
APT22F100J
37
APT37M100B2
T-MAX or TO-264
25
APT25M100J
ISOTOP
45
APT45M100J
13
APT12M80B
0.38
0.33
0.33
0.20
42
0.90
0.58
APT41F100J
ISOTOP
ISOTOP
12
APT11F80B
TO-247 or D3PAK
18
APT17F80B
TO-247 or D3PAK
TO-247
APT18M80B
25
APT24M80B
43
APT41M80B2
0.19
49
APT48M80B2
T-MAX or TO-264
0.19
33
APT32M80J
ISOTOP
60
APT58M80J
0.39
0.21
0.21
0.11
0.10
TO-247 or D3PAK
23
0.24
APT22F80B
www.microsemi.com
TO-264[L]
TO-247 or D3PAK
TO-247 or D3PAK
41
APT38F80B2
T-MAX or TO-264
47
APT44F80B2
T-MAX or TO-264
31
APT29F80J
57
APT53F80J
ISOTOP
ISOTOP
ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
8
T-MAX®[B2]
ISOTOP
19
0.43
D3PAK[S]
TO-247
20
32
0.53
APT7F100B
APT31M100B2
0.38
0.80
7
30
0.44
ISOTOP
ISOTOP
17
0.44
0.18
APT32F120J
APT9M100B
0.98
TO-247[B]
T-MAX or TO-264
0.53
0.29
800
Package
Style
23
0.32
1000
FREDFET
Part Number
14
0.70
1200
Id (A)
ISOTOP®[J]
SOT-227
(Isolated Base)
www.microchip.com
Power MOS 8 MOSFETs/FREDFETs
BVDSS (V)
600
500
Rds(on)
Max (Ω)
Id (A)
FREDFET
Part Number
Package
Style
0.37
19
APT18F60B
TO-247 or D3PAK
0.29
24
APT23F60B
TO-247 or D3PAK
Id (A)
MOSFET
Part Number
0.19
36
APT34M60B
36
APT34F60B
TO-247
0.15
45
APT43M60B2
45
APT43F60B2
T-MAX® or TO-264
0.15
31
APT30M60J
31
APT30F60J
ISOTOP®
0.11
60
APT56M60B2
60
APT56F60B2
T-MAX or TO-264
0.11
42
APT39M60J
42
APT39F60J
ISOTOP
0.09
70
APT66M60B2
70
APT66F60B2
T-MAX or TO-264
0.09
49
APT47M60J
49
APT47F60J
ISOTOP
0.055
84
APT80M60J
84
APT80F60J
ISOTOP
0.24
24
APT24F50B
TO-247 or D3PAK
0.19
30
APT30F50B
TO-247 or D3PAK
0.15
37
APT37F50B
TO-247 or D3PAK
0.13
43
APT42F50B
TO-247 or D3PAK
0.10
56
APT56M50B2
56
APT56F50B2
T-MAX or TO-264
0.10
38
APT38M50J
38
APT38F50J
ISOTOP
0.075
75
APT75M50B2
75
APT75F50B2
T-MAX or TO-264
0.075
51
APT51M50J
51
APT51F50J
ISOTOP
0.062
84
APT84M50B2
84
APT84F50B2
T-MAX or TO-264
0.062
58
APT58M50J
58
APT58F50J
ISOTOP
0.036
103
APT100M50J
103
APT100F50J
ISOTOP
TO-247[B]
D3PAK[S]
T-MAX [B2]
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Low-Voltage Power MOS V® MOSFETs/FREDFETs
BVDSS (V)
300
200
Rds(on)
Max (Ω)
Id (A)
MOSFET
Part Number
0.085
40
APT30M85BVRG
0.070
48
APT30M70BVRG
48
APT30M70BVFRG
TO-247 or D3PAK
0.040
70
APT30M40JVR
70
APT30M40JVFR
ISOTOP®
0.019
130
APT30M19JVR
130
APT30M19JVFR
ISOTOP
0.045
56
APT20M45BVRG
56
APT20M45BVFRG
TO-247
0.038
67
APT20M38BVRG
TO-247 or D3PAK
0.022
100
APT20M22B2VRG
T-MAX® or TO-264
0.011
175
APT20M11JVR
Id (A)
FREDFET
Part Number
Package
Style
TO-247
175
APT20M11JVFR
ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Power Portfolio
TO-264[L]
ISOTOP®[J]
SOT-227
(Isolated Base)
9
Ultra-Fast, Low Gate Charge MOSFETs
For 250 kHz–2 MHz Switching Applications
The ultra-fast, low gate charge MOSFET family combines the lowest gate charge available in the industry with Microchip’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very-low
switching losses. The metal gate structure and the layout of these chips provide an internal Series Gate Resistance (EGR) an order
of magnitude lower than competitive devices built with a polysilicon gate.
These devices are ideally suited for high-frequency and pulsed high-voltage applications.
Typical Applications
•
•
•
•
Features
Class D amplifiers up to 2 MHz
High-voltage pulsed DC
AM transmitters
Plasma deposition/etch
• Series gate resistance (RG)
很抱歉,暂时无法提供与“MSCM20XM10T3XG”相匹配的价格&库存,您可以联系我们找货
免费人工找货