.
MSCSM120AM02CT6LIAG
Datasheet
Very Low Stray Inductance Phase Leg SiC
MOSFET Power Module
January 2020
Contents
Contents
Revision History....................................................................................................................................1
1.1 Revision 1.0.........................................................................................................................................................1
Product Overview.................................................................................................................................2
2.1 Features..............................................................................................................................................................3
2.2 Benefits...............................................................................................................................................................3
2.3 Applications........................................................................................................................................................3
Electrical Specifications........................................................................................................................4
3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4
3.2 SiC Diode Characteristics (Per SiC Diode)............................................................................................................6
3.3 Thermal and Package Characteristics.................................................................................................................7
3.4 SiC MOSFET Performance Curves.......................................................................................................................8
3.5 SiC Diode Performance Curves.........................................................................................................................11
Package Outline..................................................................................................................................12
4.1 Package Outline Drawing..................................................................................................................................12
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Revision History
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are listed
by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 was published in January 2020. It is the first publication of this document.
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Product Overview
2
Product Overview
The MSCSM120AM02CT6LIAG device is a 1200 V, 947 A full Silicon Carbide power module.
Figure 1 • Electrical Schematic of MSCSM120AM02CT6LIAG Device
Figure 2 • Pinout Location
All ratings at Tj = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should
be followed.
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Product Overview
2.1
Features
The following are the features of MSCSM120AM02CT6LIAG device:
• SiC power MOSFET
◦ Low RDS(on)
◦ High temperature performance
• SiC Schottky diode
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature independent switching behavior
◦ Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• M4 and M5 power connectors
• M2.5 signals connectors
• AlN substrate for improved thermal performance
2.2
Benefits
The following are the benefits of MSCSM120AM02CT6LIAG device:
• High efficiency converter
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Low profile
• RoHS compliant
2.3
Applications
The following are the applications of MSCSM120AM02CT6LIAG device:
• Welding converters
• Switched mode power supplies
• Uninterruptible power supplies
• EV motor and traction drive
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Electrical Specifications
3
Electrical Specifications
This section provides the electrical specifications for the MSCSM120AM02CT6LIAG device.
3.1
SiC MOSFET Characteristics (Per MOSFET)
The following table shows the absolute maximum ratings of MSCSM120AM02CT6LIAG device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameters
Maximum Ratings
Unit
VDSS
Drain–source voltage
1200
V
ID
Continuous drain current
TC = 25°C
9471
A
TC = 80°C
7541
IDM
Pulsed drain current
1800
VGS
Gate–source voltage
–10/25
V
RDSon
Drain–source ON resistance
2.6
mΩ
PD
Power dissipation
3750
W
TC = 25°C
Note:
1. Specification of SiC MOSFET device but output current must be limited due to size of
power connectors.
The following table shows the electrical characteristics of MSCSM120AM02CT6LIAG device.
Table 2 • Electrical Characteristics
Symbol
Characteristics
Test Conditions
IDSS
Zero gate voltage drain current
RDS(on)
Drain–source on resistance
Typ
Max
Unit
VGS = 0 V ; VDS = 1200 V
200
1200
μA
VGS = 20 V
TC = 25°C
2.1
2.6
mΩ
TC = 175°C
3.4
ID = 480 A
Min
VGS(th)
Gate threshold voltage
VGS = VDS, ID = 12 mA
IGSS
Gate–source leakage current
VGS = 20 V, VDS = 0 V
1.8
2.8
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1.2
μA
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Electrical Specifications
The following table shows the dynamic characteristics of MSCSM120AM02CT6LIAG device.
Table 3 • Dynamic Characteristics
Symbol
Characteristics
Test Conditions
Ciss
Input capacitance
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate–source charge
Qgd
Gate–drain charge
Td(on)
Turn-on delay time
Tr
Rise time
Td(off)
Turn-off delay time
Tf
Fall time
Eon
Turn on energy
Min
Typ
Max
36.24
VDS = 1000 V
Unit
nF
3.24
f = 1 MHz
0.3
VGS= –5/20 V
2784
VBus = 800 V
nC
492
ID = 480 A
600
VGS = –5/20 V
56
TJ= 150 °C
ns
55
VBus = 600 V
ID = 600 A
166
RG = 0.25 Ω
67
Inductive switching
11
mJ
9.9
mJ
0.8
Ω
TJ= 150 °C
Eoff
Turn off energy
VGS = –5/20 V
VBus = 600 V
ID = 600 A
RG = 0.25 Ω
RGint
Internal gate resistance
RthJC
Junction-to-case thermal resistance
0.04
°C/W
The following table shows the body diode ratings and characteristics of MSCSM120AM02CT6LIAG device.
Table 4 • Body Diode Ratings and Characteristics
Symbol
Characteristics
Test Conditions
VSD
Diode forward voltage
VGS = 0 V ;
Min
Typ
4
Max
Unit
V
ISD = 480 A
VGS = –5 V ;
4.2
ISD = 480 A
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irr
Reverse recovery current
ISD = 480 A ;
VGS = –5 V
VR = 800 V ;
diF/dt = 12000 A/μs
90
ns
6.6
μC
162
A
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Electrical Specifications
3.2
SiC Diode Characteristics (Per SiC Diode)
The following table shows the SiC diode characteristics (per SiC diode) of MSCSM120AM02CT6LIAG device.
Table 5 • SiC Diode Characteristics (Per SiC Diode)
Symbol
Characteristics
VRRM
Peak repetitive reverse
voltage
IRM
Reverse leakage current
IF
DC forward current
VF
Diode forward voltage
Test Conditions
VR = 1200 V
IF = 300 A
Min
Typ
TJ = 25°C
0.09
TJ = 175°C
1.5
TC = 95°C
300
TJ = 25°C
1.5
TJ = 175°C
2.1
Max
Unit
1200
V
1.2
mA
A
1.8
V
QC
Total capacitive charge
VR = 600 V
1344
nC
C
Total capacitance
f = 1 MHz, VR = 400 V
1476
pF
f = 1 MHz, VR = 800 V
1092
RthJC
Junction-to-case thermal resistance
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°C/W
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Electrical Specifications
3.3
Thermal and Package Characteristics
The following table shows the package characteristics of MSCSM120AM02CT6LIAG device.
Table 6 • Package Characteristics
Symbol
Characteristics
Min
VISOL
RMS isolation voltage, any terminal to case t =1 min, 50/60 Hz
4000
TJ
Operating junction temperature range
–40
175
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
M2.5
0.4
0.6
M4
2
3
M5
2
3.5
M6
3
5
For terminals
To heatsink
Max
Unit
V
°C
N.m
LDC
Module stray inductance between VBUS and 0/VBUS
3
nH
Wt
Package weight
320
g
The following table shows the temperature sensor NTC of MSCSM120AM02CT6LIAG device.
Table 7 • Temperature Sensor NTC
Symbol
Characteristics
R25
Resistance at 25°C
Min
ΔR25/R25
B25/85
T25 = 298.15 K
ΔB/B
TC = 100°C
Typ
Max
Unit
50
kΩ
5
%
3952
K
4
%
Note:
See APT0406 application note.
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Electrical Specifications
3.4
SiC MOSFET Performance Curves
The following images show the SiC MOSFET performance curves of the MSCSM120AM02CT6LIAG device.
Figure 3 • Maximum Thermal Impedance
Figure 4 • Output Characteristics, TJ = 25 °C
Figure 5 • Output Characteristics, TJ = 175 °C
Figure 6 • Normalized RDS(on) vs. Temperature
Figure 7 • Transfer Characteristics
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Electrical Specifications
Figure 8 • Switching Energy vs. Rg
Figure 9 • Switching Energy vs. Current
Figure 10 • Capacitance vs. Drain Source Voltage
Figure 11 • Gate Charge vs. Gate Source Voltage
Figure 12 • Body Diode Characteristics, TJ=25 °C
Figure 13 • 3rd Quadrant Characteristics, TJ=25 °C
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Electrical Specifications
Figure 14 • Body Diode Characteristics, TJ=175 °C
Figure 15 • 3rd Quadrant Characteristics, TJ=175 °C
Figure 16 • Operating Frequency vs. Drain Current
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Electrical Specifications
3.5
SiC Diode Performance Curves
The following images show the SiC diode performance curves of MSCSM120AM02CT6LIAG device.
Figure 17 • Maximum Thermal Impedance
Figure 18 • Forward Characteristics
Figure 19 • Capacitance vs. Reverse Voltage
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Package Specification
4
Package Specification
The following section shows the package specification of MSCSM120AM02CT6LIAG device.
4.1
Package Outline Drawing
The following image illustrates the package outline drawing of MSCSM120AM02CT6LIAG device. The
dimensions are in millimeters.
Figure 20 • Package Outline Drawing
Note:
See AN1911—Mounting instructions for SP6 Low inductance Power Module application
note.
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