MSCSM120AM042CD3AG

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MSCSM120AM042CD3AG Datasheet Phase Leg SiC Power Module January 2020 Contents Contents 1 Revision History.................................................................................................................................1 Revision 1.0...............................................................................................................................................................1 Product Overview.................................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4 3.2 SiC Schottky Diode Ratings Characteristics (Per SiC Diode)................................................................................6 3.3 Thermal Package Characteristics........................................................................................................................6 3.4 Typical SiC MOSFET Performance Curves...........................................................................................................7 3.5 Typical SiC Diode Performance Curves.............................................................................................................10 Package Specifications........................................................................................................................11 Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 ii Tables Tables Table 1 • Absolute Maximum Ratings..................................................................................................................................4 Table 2 • Electrical Characteristics........................................................................................................................................4 Table 3 • Dynamic Characteristics........................................................................................................................................5 Table 4 • Body Diode Ratings and Characteristics................................................................................................................5 Table 5 • SiC Schottky Diode Ratings and Characteristics.....................................................................................................6 Table 6 • Package Characteristics.........................................................................................................................................6 Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 iii Figures Figures Figure 1 • MSCSM120AM042CD3AG Electrical Schematic...................................................................................................2 Figure 2 • MSCSM120AM042CD3AG Pinout Location.........................................................................................................2 Figure 3 • Maximum Thermal Impedance............................................................................................................................7 Figure 4 • Output Characteristics, TJ = 25 °C........................................................................................................................7 Figure 5 • Output Characteristics, TJ = 175 °C......................................................................................................................7 Figure 6 • Normalized RDS(on) vs. Temperature..................................................................................................................7 Figure 7 • Transfer Characteristics........................................................................................................................................7 Figure 8 • Switching Energy vs. Rg........................................................................................................................................8 Figure 9 • Switching Energy vs. Current...............................................................................................................................8 Figure 10 • Capacitance vs. Drain Source Voltage................................................................................................................8 Figure 11 • Gate Charge vs. Gate Source Voltage.................................................................................................................8 Figure 12 • Body Diode Characteristics, TJ = 25 °C...............................................................................................................8 Figure 13 • 3rd Quadrant Characteristics, TJ = 25 °C............................................................................................................8 Figure 14 • Body Diode Characteristics, TJ = 175 °C.............................................................................................................9 Figure 15 • 3rd Quadrant Characteristics, TJ = 175 °C..........................................................................................................9 Figure 16 • Operating Frequency vs. Drain Current.............................................................................................................9 Figure 17 • Maximum Thermal Impedance........................................................................................................................10 Figure 18 • Forward Characteristics...................................................................................................................................10 Figure 19 • Capacitance vs. Reverse Voltage......................................................................................................................10 Figure 20 • Package Outline...............................................................................................................................................11 Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 iv Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 is the first publication of this document, published in January 2020. Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSCSM120AM042CD3AG is a phase leg 1200 V/495 A silicon carbide power module. Figure 1 • MSCSM120AM042CD3AG Electrical Schematic Figure 2 • MSCSM120AM042CD3AG Pinout Location All ratings at TJ = 25 °C unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSCSM120AM042CD3AG device: • SiC Power MOSFET ◦ Low RDS(on) ◦ High temperature performance • Silicon carbide (SiC) Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature-independent switching behavior ◦ Positive temperature coefficient on VF • • • • 2.2 Kelvin emitter for easy drive High level of integration Aluminum nitride (AlN) substrate for improved thermal performance M6 power connectors Benefits The following are benefits of the MSCSM120AM042CD3AG device: • High efficiency converters • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • RoHS Compliant 2.3 Applications The MSCSM120AM042CD3AG device is designed for the following applications: • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • EV motor and traction drive Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCSM120AM042CD3AG device. 3.1 SiC MOSFET Characteristics (Per MOSFET) This section describes the electrical characteristics of the MSCSM120AM042CD3AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-source voltage 1200 V ID Continuous drain current TC = 25 °C 4951 A TC = 80 °C 3951 IDM Pulsed drain current 990 VGS Gate-source voltage –10/25 V RDSon Drain-source ON resistance 5.2 mΩ PD Power dissipation 2031 W TC = 25 °C Note: 1. Specification of SiC MOSFET device but output current must be limited due to the size of power connectors. Table 2 • Electrical Characteristics Symbol Characteristic Test Conditions IDSS Zero gate voltage drain current VGS = 0 V; VDS = 1200 V RDSon Drain–source on resistance VGS = 20 V ID = 240 A VGS(th) Gate threshold voltage VGS = VDS, ID = 6 mA IGSS Gate–source leakage current VGS = 20 V, VDS = 0 V Min Typ Max Unit 60 600 μA TJ = 25 °C 4.2 5.2 mΩ TJ = 175 °C 6.7 1.8 Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 2.8 V 600 nA 4 Electrical Specifications Table 3 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V 18.1 Coss Output capacitance VDS = 1000 V f = 1 MHz 1.6 Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate–source charge Qgd Gate–drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Min Typ Max Unit pF 0.15 VGS= –5/20 V 1392 VBus = 800 V nC 246 ID = 240 A 300 VGS = –5/20 V 56 VBus = 600 V ns 55 ID = 300 A RGon = 1.3Ω; RGoff = 0.8Ω 166 TJ = 150 °C 67 Inductive Switching TJ = 150 °C 6.1 mJ TJ = 150 °C 5.5 mJ 1 Ω VGS = –5/20 V Eoff Turn off energy VBus = 600 V ID = 300 A RGon = 1.3Ω RGoff = 0.8Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.074 °C/W Max Unit Table 4 • Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min Typ VSD Diode forward voltage VGS = 0 V; ISD = 240 A 4 VGS = –5 V; ISD = 240 A 4.2 ISD = 240 A; VGS = –5 V; VR = 800 V; diF/dt = 600 0 A/μs 90 ns V trr Reverse recovery time Qrr Reverse recovery charge 3300 nC Irr Reverse recovery current 81 A Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 5 Electrical Specifications 3.2 SiC Schottky Diode Ratings Characteristics (Per SiC Diode) This section shows the SiC Schottky diode ratings and characteristics of the device. Table 5 • SiC Schottky Diode Ratings and Characteristics Symbol Characteristic VRRM Peak repetitive reverse voltage IRRM Reverse leakage current IF Forward current VF Diode forward voltage Min VR = 1200 V IF = 180 A Typ TJ = 25 °C 60 TJ = 175 °C 900 TC = 100 °C 180 TJ = 25 °C 1.5 TJ = 175 °C 2.1 Max Unit 1200 V 1200 μA A 1.8 V QC Total capacitive charge VR = 600 V 780 nC C Total capacitance f = 1 MHz, VR = 400 V 846 pF f = 1 MHz, VR = 800 V 630 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.175 °C/W Thermal Package Characteristics This section shows the thermal and package characteristics of the device. Table 6 • Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 min, 50/60 Hz 4000 TJ Operating junction temperature range –40 175 °C TJOP Recommended junction temperature under switching conditions –40 TJmax –25 °C TSTG Storage temperature range –40 125 °C TC Operating case temperature –40 125 °C Torque Mounting torque N.m Wt Max V For terminals M6 3 5 To heatsink M6 3 5 Package weight Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 Unit 350 g 6 Electrical Specifications 3.4 Typical SiC MOSFET Performance Curves This section shows the typical performance curves of the MSCSM120AM042CD3AG SiC MOSFET. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ = 25 °C Figure 5 • Output Characteristics, TJ = 175 °C Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 7 Electrical Specifications Figure 8 • Switching Energy vs. Rg Figure 9 • Switching Energy vs. Current Figure 10 • Capacitance vs. Drain Source Voltage Figure 11 • Gate Charge vs. Gate Source Voltage Figure 12 • Body Diode Characteristics, TJ = 25 °C Figure 13 • 3rd Quadrant Characteristics, TJ = 25 °C Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 8 Electrical Specifications Figure 14 • Body Diode Characteristics, TJ = 175 °C Figure 15 • 3rd Quadrant Characteristics, TJ = 175 °C Figure 16 • Operating Frequency vs. Drain Current Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 9 Electrical Specifications 3.5 Typical SiC Diode Performance Curves This section shows the typical performance curves of the MSCSM120AM042CD3AG SiC diode. Figure 17 • Maximum Thermal Impedance Figure 18 • Forward Characteristics Figure 19 • Capacitance vs. Reverse Voltage Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 10 Package Specifications 4 Package Specifications This section shows the package outline of the MSCSM120AM042CD3AG device. All dimensions are in millimeters. Figure 20 • Package Outline See application note 1908 - Mounting instructions for D3 and D4 power modules on www.microsemi.com Microsemi Propreitary and Confidential MSCSM120AM042CD3AG Datasheet Revision 1.0 11 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 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