MSCSM120DAM31CTBL1NG
Boost Chopper SiC MOSFET Power Module
Product Overview
The MSCSM120DAM31CTBL1NG device is a 1200 V, 79 A boost chopper silicon carbide (SiC) MOSFET power
module.
+VBUS
OUT
0/VBUS
T1
T2
S2
G2
All ratings at TJ = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 1
MSCSM120DAM31CTBL1NG
Features
The following are the key features of MSCSM120DAM31CTBL1NG device:
•
SiC Power MOSFET
– Low RDS(on)
– High speed switching
•
SiC Schottky Diode
– Zero reverse recovery
– Zero forward recovery
– Temperature independent switching behavior
– Positive temperature coefficient on VF
•
•
•
•
•
•
Very low stray inductance
Ultra-low weight and profile
Kelvin source for easy drive
Si3N4 substrate with thick copper for improved thermal performance
Internal thermistor for temperature monitoring
Extended temperature range
Benefits
The following are the benefits of MSCSM120DAM31CTBL1NG device:
•
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-heatsink thermal resistance
Low profile
RoHS compliant
Solderable terminals both for power and signal for easy PCB mounting
Very integrated power conversion system
Application
The following are the applications of MSCSM120DAM31CTBL1NG device:
•
•
•
High reliability power systems
High Efficiency AC/DC and DC/AC converters
Motor control
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 2
MSCSM120DAM31CTBL1NG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM120DAM31CTBL1NG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings of MSCSM120DAM31CTBL1NG device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VDSS
Drain-Source voltage
1200
V
ID
Continuous drain current
TH = 25 °C
79
A
TH = 80 °C
63
IDM
Pulsed drain current
160
VGS
Gate-Source voltage
–10/25
V
RDS(on)
Drain-Source ON resistance
31
mΩ
PD
Power dissipation
310
W
TH = 25 °C
The following table lists the electrical characteristics of MSCSM120DAM31CTBL1NG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IDSS
Zero gate voltage
drain current
VGS = 0 V
—
10
100
µA
Drain–Source on
resistance
VGS = 20 V
TJ = 25 °C
—
25
31
mΩ
ID = 40 A
TJ = 175 °C
—
40
—
Gate threshold
voltage
VGS = VDS
1.8
2.8
—
V
—
—
150
nA
RDS(on)
VGS(th)
IGSS
Gate–Source
leakage current
© 2021 Microchip Technology Inc.
and its subsidiaries
VDS = 1200 V
ID = 1 mA
VGS = 20 V
VDS = 0 V
Datasheet
DS00004079A-page 3
MSCSM120DAM31CTBL1NG
Electrical Specifications
The following table lists the dynamic characteristics of MSCSM120DAM31CTBL1NG device.
Table 1-3. Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input capacitance
VGS = 0 V
—
3020
—
pF
Coss
Output capacitance
VDS = 1000 V
—
270
—
Crss
Reverse transfer
capacitance
f = 1 MHz
—
25
—
Qg
Total gate charge
VGS = –5 V/20 V
—
232
—
Qgs
Gate-Source charge
VBus = 800 V
—
41
—
Qgd
Gate-Drain charge
ID = 40 A
—
50
—
Td(on)
Turn-on delay time
VGS = –5 V/20 V
—
30
—
Tr
Rise time
VBus = 600 V
—
30
—
Td(off)
Turn-off delay time
ID = 50 A
—
50
—
Fall time
RGon = 8 Ω
25
—
Tf
nC
ns
RGoff = 4.7 Ω
Eon
Turn-on energy
VGS = –5 V/20 V
TJ = 150 °C
—
0.99
—
Eoff
Turn-off energy
VBus = 600 V
TJ = 150 °C
—
0.66
—
—
0.88
—
Ω
—
0.483
—
°C/W
mJ
ID = 50 A
RGon = 8 Ω
RGoff = 4.7 Ω
RGint
Internal gate resistance
RthJH
Junction-to-heatsink thermal resistance
λ = 3.4 W/mK
The following table lists the body diode ratings and characteristics of MSCSM120DAM31CTBL1NG device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VSD
Diode forward voltage
VGS = 0 V
—
4
—
V
—
4.2
—
ISD = 40 A
VGS = –5 V
ISD = 40 A
trr
Reverse recovery time
ISD = 40 A
—
90
—
ns
Qrr
Reverse recovery charge
VGS = –5 V
—
550
—
nC
Reverse recovery current
VR = 800 V
—
13.5
—
A
Irr
diF/dt = 1000 A/µs
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 4
MSCSM120DAM31CTBL1NG
Electrical Specifications
1.2
SiC Diode Ratings and Characteristics (Per SiC Diode)
The following table lists the SiC diode ratings and characteristics of MSCSM120DAM31CTBL1NG device.
Table 1-5. SiC Diode Ratings and Characteristics
Symbol
Characteristic
VRRM
Peak repetitive reverse voltage
IRM
Reverse leakage current VR = 1200 V
IF
DC forward current
VF
Diode forward voltage
Test Conditions
IF = 50 A
Min
Typ
Max
Unit
—
—
1200
V
TJ = 25 °C
—
10
200
μA
TJ = 175 °C
—
250
—
TH = 100 °C
—
50
—
A
TJ = 25 °C
—
1.5
1.8
V
TJ = 175 °C
—
2.1
—
QC
Total capacitive charge
VR = 600 V
—
224
—
nC
C
Total capacitance
f = 1 MHz
—
246
—
pF
—
182
—
—
0.635
—
VR = 400 V
f = 1 MHz
VR = 800 V
RthJH
1.3
Junction-to-heatsink thermal
resistance
λpaste = 3.4 W/mK
°C/W
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of the MSCSM120DAM31CTBL1NG device.
Table 1-6. Thermal and Package Characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
VISOL
RMS isolation voltage, any terminal to case t = 1 min,
50 Hz/60 Hz
2500
—
—
V
TJ
Operating junction temperature range
–55
—
175
°C
TJOP
Recommended junction temperature under switching
conditions
–55
—
TJmax–25
TSTG
Storage case temperature
–55
—
125
TC
Operating case temperature
–55
—
125
Torque
Mounting torque
1.5
—
2
N.m
Wt
Package weight
—
13.5
—
g
© 2021 Microchip Technology Inc.
and its subsidiaries
To heatsink
M4
Datasheet
DS00004079A-page 5
MSCSM120DAM31CTBL1NG
Electrical Specifications
The following table lists the temperature sensor NTC of the MSCSM120DAM31CTBL1NG device.
Table 1-7. Temperature Sensor NTC
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance at 25 °C
—
50
—
kΩ
ΔR25/R25
—
—
5
—
%
B25/85
T25 = 298.15 K
—
3952
—
K
ΔB/B
—
—
4
—
%
TC = 100 °C
Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information.
1.4
Typical SiC MOSFET Performance Curve (Per SiC MOSFET)
This section shows the typical SiC MOSFET performance curves of the MSCSM120DAM31CTBL1NG device.
Figure 1-1. Junction-to-Heatsink Thermal Impedance
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 6
MSCSM120DAM31CTBL1NG
Electrical Specifications
Figure 1-2. Output Characteristics, TJ = 25 °C
Figure 1-3. Output Characteristics, TJ = 175 °C
Figure 1-4. Normalized RDS(on) vs. Temperature
Figure 1-5. Transfer Characteristics
Figure 1-6. Switching Energy vs. Rg
Figure 1-7. Switching Energy vs. Current
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 7
MSCSM120DAM31CTBL1NG
Electrical Specifications
Figure 1-8. Capacitance vs. Drain Source Voltage
Figure 1-9. Gate Charge vs. Gate Source Voltage
Figure 1-10. Body Diode Characteristics, TJ = 25 °C
Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C
Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 8
MSCSM120DAM31CTBL1NG
Electrical Specifications
Figure 1-14. Operating Frequency vs Drain Current
1.5
Typical SiC Diode Performance Curves (Per SiC Diode)
This section shows the typical SiC diode performance curves of the MSCSM120DAM31CTBL1NG device.
Figure 1-15. Junction-to-Heatsink Thermal Impedance
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 9
MSCSM120DAM31CTBL1NG
Electrical Specifications
Figure 1-16. Forward Characteristics
© 2021 Microchip Technology Inc.
and its subsidiaries
Figure 1-17. Capacitance vs. Reverse Voltage
Datasheet
DS00004079A-page 10
MSCSM120DAM31CTBL1NG
Package Specifications
2.
Package Specifications
The following section shows the package specification of the MSCSM120DAM31CTBL1NG device.
Package Outline
The following figure shows the package outline drawing of MSCSM120DAM31CTBL1NG device. The dimensions in
the following figure are in millimeters.
Figure 2-1. Package Outline Drawing
5 ±0,3
5 ±0,3
0,8 X 0,5 ±0,1
1,5 ±0,5
6,3 ±0,5
15 ±0,5
11,4 ±0,5
A
4,4 ±0,2
25,6 ±1
0
9,5 ±0,2
8,5 ±0,5
5,5 ±0,5
A
6 :1
7,4 ±0,5
13,2 ±0,5
2,54 ±0,15
1,3 ±0,5
0
40,3 ±1
1 ±0,1
4 X 9,3 ±0,5
7,8 ±0,5
14,1 ±0,5
8,2 ±0,5
1 ±0,3
0,5 ±0,1
2.1
°
12
8,5 ±0,5
2,54 ±0,25
2 ±0,3
3,8 ±0,5
15,8 ±0,5
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 11
MSCSM120DAM31CTBL1NG
Revision History
3.
Revision History
Revision
Date
Description
A
07/2021
Initial Revision
© 2021 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004079A-page 12
MSCSM120DAM31CTBL1NG
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Datasheet
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MSCSM120DAM31CTBL1NG
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Datasheet
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MSCSM120DAM31CTBL1NG
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