MSCSM120HM50CT3AG

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MSCSM120HM50CT3AG Datasheet Full Bridge SiC MOSFET Power Module January 2020 Contents Contents Revision History....................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 Product Overview.................................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 Electrical Specifications........................................................................................................................4 3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4 3.2 Reverse SiC Diode Ratings and Characteristics (Per SiC Diode)..........................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 3.4 Typical SiC MOSFET Performance Curves...........................................................................................................8 3.5 Typical SiC Diode Performance Curves.............................................................................................................11 Package Specifications........................................................................................................................12 4.1 Package Outline Drawing..................................................................................................................................12 Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in January 2020. It is the first publication of this document. Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSCSM120HM50CT3AG device is a full bridge 1200 V/ 55 A full Silicon Carbide (SiC) power module. Figure 1 • MSCSM120HM50CT3AG Electrical Schematic Figure 2 • MSCSM120HM50CT3AG Pinout Location All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSCSM120HM50CT3AG device: • SiC Power MOSFET ◦ Low RDS(on) ◦ High temperature performance • SiC Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • Very low stray inductance • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCSM120HM50CT3AG device: • High power and efficiency converters and inverters • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals for power and signal, for easy PCB mounting • Low profile • RoHS compliant 2.3 Applications The MSCSM120HM50CT3AG device is designed for the following applications: • Uninterruptible power supplies • Switched mode power supplies • EV motor and traction drive • Welding converters Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCSM120HM50CT3AG device. 3.1 SiC MOSFET Characteristics (Per MOSFET) The following table shows the absolute maximum ratings per MOSFET of the MSCSM120HM50CT3AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VDSS Drain-source voltage 1200 V ID Continuous drain current TC = 25 °C 55 A TC = 80 °C 44 IDM Pulsed drain current 110 VGS Gate-source voltage –10/25 V RDSon Drain source ON resistance 50 mΩ PD Power dissipation 245 W TC = 25 °C The following table shows the electrical characteristics per MOSFET of the MSCSM120HM50CT3AG device. Table 2 • Electrical Characteristics Symbol Characteristic Test Conditions IDSS Zero gate voltage drain current VGS = 0 V; VDS = 1200 V RDS(on) Drain-source on resistance VGS = 20 V ID = 40 A VGS(th) Gate threshold voltage VGS = VDS, ID = 1 mA IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V Min Typ Max Unit 10 100 µA TJ = 25 °C 40 50 mΩ TJ = 175 °C 64 1.8 Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 2.7 V 150 nA 4 Electrical Specifications The following table shows the dynamic characteristics per MOSFET of the MSCSM120HM50CT3AG device. Table 3 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate–source charge Qgd Gate–drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Min Typ Max 1990 VDS = 1000 V Unit pF 156 f = 1 MHz 17 VGS = –5 V/20 V 137 VBus = 800 V nC 29 ID= 40 A 31 VGS = –5 V/20 V 30 VBus = 600 V ns 30 ID = 40 A RGon = 10 Ω; RGoff = 5.8 Ω 50 25 Inductive switching TJ = 150 °C 0.79 mJ TJ = 150 °C 0.53 mJ 1.2 Ω VGS = –5 V/20 V Eoff Turn off energy VBus = 600 V ID = 40 A RGon = 10 Ω RGoff = 5.8 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.61 °C/W Max Unit The following table shows the body diode ratings and characteristics per MOSFET of the MSCSM120HM31CT3AG device. Table 4 • Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions VSD Diode Forward Voltage VGS = 0 V ; ISD = 40 A 5.4 V trr Reverse recovery time ISD = 40 A; VGS = –5 V 31 ns 610 nC 40 A Qrr Reverse recovery charge Irr Reverse recovery current Min VR = 800 V; diF/dt = 1800 A/μs Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 Typ 5 Electrical Specifications 3.2 Reverse SiC Diode Ratings and Characteristics (Per SiC Diode) The following table shows the reverse SiC diode ratings and characteristics per SiC diode of the MSCSM120HM50CT3AG device. Table 5 • Reverse SiC Diode Ratings and Characteristics (Per SiC Diode) Symbol Characteristic VRRM Peak repetitive reverse voltage IRM Reverse leakage current IF DC forward current VF Diode forward voltage Min VR = 1200 V IF = 15 A Typ TJ = 25 °C 10 TJ = 175 °C 50 TC = 100 °C 15 TJ= 25 °C 1.5 TJ = 175 °C 2 Max Unit 1200 V 200 μA A 1.8 V Qc Total capacitive charge VR = 600 V 73 nC C Total capacitance f = 1 MHz, VR = 400 V 80 pF f = 1 MHz, VR = 800 V 59 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 1.55 °C/W Thermal and Package Characteristics The following table shows the package characteristics of the MSCSM120HM50CT3AG device. Table 6 • Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight 110 g To heatsink M4 Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 Max Unit V °C 6 Electrical Specifications The following table shows the temperature sensor NTC (see application note APT0406 on www.microsemi.com) of the MSCSM120HM50CT3AG device. Table 7 • Temperature Sensor NTC Symbol Characteristic R25 Resistance at 25 °C Min ∆R25/R25 B25/85 ∆B/B T25 = 298.15 K TC = 100 °C Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 Typ Max Unit 50 kΩ 5 % 3952 K 4 % 7 Electrical Specifications 3.4 Typical SiC MOSFET Performance Curves This sections shows the typical SiC MOSFET performance curves of the MSCSM120HM50CT3AG device. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ = 25 °C Figure 5 • Output Characteristics, TJ = 175 °C Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 8 Electrical Specifications Figure 8 • Switching Energy vs. Rg Figure 9 • Switching Energy vs. Current Figure 10 • Capacitance vs. Drain Source Voltage Figure 11 • Gate Charge vs. Gate Source Voltage Figure 12 • Body Diode Characteristics, TJ = 25 °C Figure 13 • 3rd Quadrant Characteristics, TJ = 25 °C Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 9 Electrical Specifications Figure 14 • Body Diode Characteristics, TJ = 175 °C Figure 15 • 3rd Quadrant Characteristics, TJ = 175 °C Figure 16 • Operating Frequency vs. Drain Current Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 10 Electrical Specifications 3.5 Typical SiC Diode Performance Curves This sections shows the typical SiC diode performance curves of the MSCSM120HM50CT3AG device. Figure 17 • Maximum Thermal Impedance Figure 18 • Forward Characteristics Figure 19 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 11 Package Specifications 4 Package Specifications This section shows the package specification of the MSCSM120HM50CT3AG device. 4.1 Package Outline Drawing The following figure illustrates the package outline of the MSCSM120HM50CT3AG device. The dimensions are in millimeters. Figure 20 • Package Outline Drawing Note: See application note 1906—Mounting Instructions for SP3F Power Modules on www.microsemi.com Microsemi Proprietary and Confidential MSCSM120HM50CT3AG Datasheet Revision 1.0 12 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. 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