MSCSM170AM45CT1AG
Phase Leg SiC MOSFET Power Module
Product Overview
The MSCSM170AM45CT1AG device is a phase leg 1700 V, 64 A silicon carbide (SiC) MOSFET power module.
Note: Pins 1/2, 4/5, and 7/8 must be shorted together.
All ratings at TJ = 25 °C, unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 1
MSCSM170AM45CT1AG
Features
The following are key features of the MSCSM170AM45CT1AG device:
•
•
•
•
•
•
SiC Power MOSFET
– High speed switching
– Low RDS(on)
– Ultra low loss
SiC Schottky Diode
– Zero reverse recovery
– Zero forward recovery
– Temperature independent switching behavior
– Positive temperature coefficient on VF
Very low stray inductance
Kelvin source for easy drive
Internal thermistor for temperature monitoring
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
The following are the benefits of MSCSM170AM45CT1AG device:
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•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for power and signal for easy mounting of PCB
Low profile
RoHS Compliant
Application
The MSCSM170AM45CT1AG device is designed for the following applications:
•
•
•
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Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 2
MSCSM170AM45CT1AG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM170AM45CT1AG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170AM45CT1AG device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VDSS
Drain-Source voltage
1700
V
ID
Continuous drain current
TC = 25 °C
64
A
TC = 80 °C
51
IDM
Pulsed drain current
130
VGS
Gate-source voltage
–10/23
V
RDS(on)
Drain-source ON resistance
45
mΩ
PD
Power dissipation
319
W
TC = 25 °C
The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170AM45CT1AG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IDSS
Zero gate voltage
drain current
VGS = 0 V; VDS = 1700 V
—
10
100
µA
RDS(on)
Drain–Source on
resistance
VGS = 20 V
TJ = 25 °C
—
35
45
mΩ
ID = 30 A
TJ = 175 °C
—
62
—
VGS(th)
Gate threshold
voltage
VGS = VDS; ID = 2.5 mA
1.8
3.2
—
V
IGSS
Gate–Source
leakage current
VGS = 20 V; VDS = 0 V
—
—
150
nA
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 3
MSCSM170AM45CT1AG
Electrical Specifications
The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170AM45CT1AG device.
Table 1-3. Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input capacitance
VGS = 0 V
—
3300
—
pF
Coss
Output capacitance
VDS = 1000 V
—
150
—
Crss
Reverse transfer
capacitance
f = 1 MHz
—
10
—
Qg
Total gate charge
VGS = –5 V/20 V
—
178
—
Qgs
Gate-source charge
VBus = 850 V
—
49
—
Qgd
Gate-drain charge
ID = 30 A
—
27
—
Td(on)
Turn-on delay time
TJ = 150 °C
—
24
—
Tr
Rise time
VGS = –5 V/20 V
—
17
—
Turn-off delay time
VBus = 900 V
—
35
—
Fall time
ID = 50 A
19
—
Td(off)
Tf
nC
ns
RG(on) = 4.7 Ω
RG(off) = 2.7 Ω
Eon
Turn-on energy
VGS = –5 V/20 V
TJ = 150 °C
—
1.1
—
Eoff
Turn-off energy
VBus = 900 V
TJ = 150 °C
—
0.16
—
mJ
ID = 50 A
RG(on) = 4.7 Ω
RG(off) = 2.7 Ω
RGint
Internal gate resistance
—
0.85
—
Ω
RthJC
Junction-to-case thermal resistance
—
—
0.47
°C/W
The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM170AM45CT1AG
device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VSD
Diode forward voltage
VGS = 0 V; ISD = 30 A
—
3.7
—
V
VGS = –5 V; ISD = 30 A
—
3.9
—
trr
Reverse recovery time
ISD = 30 A; VGS = –5 V
—
27
—
ns
Qrr
Reverse recovery charge
VR = 900 V; diF/dt = 1000 A/µs
—
650
—
nC
Irr
Reverse recovery current
—
46
—
A
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 4
MSCSM170AM45CT1AG
Electrical Specifications
1.2
SiC Schottky Diode Ratings and Characteristics (Per SiC Diode)
The following table lists the SiC diode ratings and characteristics per SiC diode of MSCSM170AM45CT1AG device.
Table 1-5. SiC Schottky Diode Ratings and Characteristics
Symbol
Characteristic
VRRM
Peak repetitive reverse voltage
IRRM
Reverse leakage current
VR = 1700 V
Min
Typ
Max
Unit
—
—
1700
V
TJ = 25 °C
—
10
200
µA
TJ = 175 °C
—
150
—
IF
DC forward current
—
TC = 125 °C
—
30
—
A
VF
Diode forward voltage
IF = 30 A
TJ = 25 °C
—
1.5
1.8
V
TJ = 175 °C
—
2.3
—
QC
Total capacitive charge
VR = 900 V
—
230
—
nC
C
Total capacitance
f = 1 MHz, VR = 600 V
—
167
—
pF
f = 1 MHz, VR = 900 V
—
138
—
—
—
0.52
RthJC
1.3
Test Conditions
Junction-to-case thermal resistance
°C/W
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of the MSCSM170AM45CT1AG device.
Table 1-6. Thermal and Package Characteristics
Symbol
Characteristics
Min
Max
Unit
VISOL
RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz
4000
—
V
TJ
Operating junction temperature range
–40
175
°C
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–
25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
2
3
N.m
Wt
Package weight
—
80
g
© 2021 Microchip Technology Inc.
To heatsink
Datasheet
M4
DS00003938A-page 5
MSCSM170AM45CT1AG
Electrical Specifications
The following table lists the temperature sensor NTC of the MSCSM170AM45CT1AG device.
Table 1-7. Temperature Sensor NTC
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance at 25 °C
—
—
50
—
kΩ
ΔR25/R25
—
—
—
5
—
%
B25/85
T25 = 298.15 K
—
—
3952
—
K
ΔB/B
—
TC = 100 °C
—
4
—
%
Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information.
1.4
Typical SiC MOSFET Performance Curve
This section shows the typical SiC MOSFET performance curves of the MSCSM170AM45CT1AG device.
Figure 1-1. Maximum Thermal Impedance
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 6
MSCSM170AM45CT1AG
Electrical Specifications
Figure 1-2. Output Characteristics, TJ = 25 °C
Figure 1-3. Output Characteristics, TJ = 175 °C
Figure 1-4. Normalized RDS(on) vs. Temperature
Figure 1-5. Transfer Characteristics
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 7
MSCSM170AM45CT1AG
Electrical Specifications
Figure 1-6. Switching Energy vs. Rg
Figure 1-7. Switching Energy vs. Current
Figure 1-8. Capacitance vs. Drain Source Voltage
Figure 1-9. Gate Charge vs. Gate Source Voltage
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 8
MSCSM170AM45CT1AG
Electrical Specifications
Figure 1-10. Body Diode Characteristics, TJ = 25 °C
Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C
Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 9
MSCSM170AM45CT1AG
Electrical Specifications
Figure 1-14. Operating Frequency vs Drain Current
1.5
Typical SiC Diode Performance Curves
This section shows the typical SiC diode performance curves of the MSCSM170AM45CT1AG device.
Figure 1-15. Maximum Thermal Impedance
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 10
MSCSM170AM45CT1AG
Electrical Specifications
Figure 1-16. Forward Characteristics
© 2021 Microchip Technology Inc.
Figure 1-17. Capacitance vs. Reverse Voltage
Datasheet
DS00003938A-page 11
MSCSM170AM45CT1AG
Package Specifications
2.
Package Specifications
The following section shows the package specification of the MSCSM170AM45CT1AG device.
2.1
Package Outline
The following figure shows the package outline drawing of the MSCSM170AM45CT1AG device. The dimensions in
the following figure are in millimeters.
Figure 2-1. Package Outline Drawing
Note: See AN3500A—Mounting Instructions for SP1F and SP3F Power Modules for more information.
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 12
MSCSM170AM45CT1AG
Revision History
3.
Revision History
Revision
Date
Description
A
04/2021
This is the first publication of this document.
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 13
MSCSM170AM45CT1AG
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Datasheet
DS00003938A-page 14
MSCSM170AM45CT1AG
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ISBN: 978-1-5224-8004-4
© 2021 Microchip Technology Inc.
Datasheet
DS00003938A-page 15
MSCSM170AM45CT1AG
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