MSCSM170TLM23C3AG

MSCSM170TLM23C3AG Three Level Inverter SiC MOSFET Power Module Product Overview The MSCSM170TLM23C3AG device is a three level inverter 1700V/124A silicon carbide (SiC) MOSFET power module. 24 23 22 21 29 16 30 15 31 14 32 13 1 2 3 5 6 7 8 10 11 12 Notes:  1. All multiple inputs and outputs must be shorted together. 1/2/3 ; 10/11/12 ; 5/6/7/8 ; 21/22/23/24. 2. All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 1 MSCSM170TLM23C3AG Features The following are key features of the MSCSM170TLM23C3AG device: • • • • • • SiC Power MOSFET – Low RDS(on) – High temperature performance SiC Schottky Diode (CR1 and CR2) – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF Low stray inductance Kelvin source for easy drive High level of integration Aluminum nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM170TLM23C3AG device: • • • • • • Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals for power and signal for easy mounting of PCB mounting Low profile RoHS Compliant Application The MSCSM170TLM23C3AG device is designed for the following applications: • Uninterruptible power supplies © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 2 MSCSM170TLM23C3AG Electrical Specifications 1. Electrical Specifications This section provides the electrical specifications of the MSCSM170TLM23C3AG device. 1.1 SiC MOSFET Characteristics (Per SiC MOSFET) The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170TLM23C3AG device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-Source voltage 1700 V ID Continuous drain current TC = 25 °C 124 A TC = 80 °C 98 IDM Pulsed drain current 240 VGS Gate-Source voltage –10/23 V RDS(on) Drain-Source ON resistance 22.5 mΩ PD Power dissipation 602 W TC = 25 °C The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170TLM23C3AG device. Table 1-2. Electrical Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current VGS = 0V; VDS = 1700V — 20 200 µA RDS(on) Drain–Source on resistance VGS = 20V TJ = 25 °C — 17.5 22.5 mΩ ID = 60A TJ = 175 °C — 31 — VGS(th) Gate threshold voltage VGS = VDS; ID = 5 mA 1.8 3.2 — V IGSS Gate–Source leakage current VGS = 20V; VDS = 0V — — 200 nA © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 3 MSCSM170TLM23C3AG Electrical Specifications The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM170TLM23C3AG device. Table 1-3. Dynamic Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0V — 6600 — pF Coss Output capacitance VDS = 1000V — 300 — Crss Reverse transfer capacitance f = 1 MHz — 20 — Qg Total gate charge VGS = –5V/20V — 356 — Qgs Gate-source charge VBus = 850V — 98 — Qgd Gate-drain charge ID = 60A — 54 — Td(on) Turn-on delay time VGS = –5V/20V — 24 — Tr Rise time VBus = 900V — 17 — Turn-off delay time ID = 100A — 35 — Fall time RG(on) = 2.4Ω 19 — Td(off) Tf TJ = 150 °C nC ns RG(off) = 1.4Ω Eon Turn-on energy VGS = –5V/20V TJ = 150 °C — 2.2 — Eoff Turn-off energy VBus = 900V TJ = 150 °C — 0.33 — mJ ID = 100A RG(on) = 2.4Ω RG(off) = 1.4Ω RGint Internal gate resistance — 2.93 — Ω RthJC Junction-to-case thermal resistance — — 0.25 °C/W The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM170TLM23C3AG device. Table 1-4. Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VSD Diode forward voltage VGS = 0V; ISD = 60A — 3.7 — V VGS = –5V; ISD = 60A — 3.9 — trr Reverse recovery time ISD = 60A; VGS = –5V — 27 — ns Qrr Reverse recovery charge VR = 900V; diF/dt = 2000 A/µs — 1300 — nC Irr Reverse recovery current — 92 — A © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 4 MSCSM170TLM23C3AG Electrical Specifications 1.2 CR1 and CR2 SiC Diode Ratings and Characteristics (Per SiC Diode) The following table lists the CR1 and CR2 SiC diode ratings and characteristics per SiC diode of MSCSM170TLM23C3AG device. Table 1-5. SiC Schottky Diode Ratings and Characteristics Symbol Characteristic VRRM Peak repetitive reverse voltage IRRM Reverse leakage current VR = 1700V Min. Typ. Max. Unit — — 1700 V TJ = 25 °C — 20 400 µA TJ = 175 °C — 300 — IF DC forward current — TC = 125 °C — 60 — A VF Diode forward voltage IF = 60A TJ = 25 °C — 1.5 1.8 V TJ = 175 °C — 2.3 — QC Total capacitive charge VR = 900V — 460 — nC C Total capacitance f = 1 MHz, VR = 600V — 334 — pF f = 1 MHz, VR = 900V — 276 — — — 0.276 RthJC 1.3 Test Conditions Junction-to-case thermal resistance °C/W Thermal and Package Characteristics The following table lists the thermal and package characteristics of the MSCSM170TLM23C3AG device. Table 1-6. Thermal and Package Characteristics Symbol Characteristics VISOL Max. Unit RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz 4000 — V TJ Operating junction temperature range –40 175 °C TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight — 110 g © 2021 Microchip Technology Inc. and its subsidiaries Min. To heatsink Datasheet M4 DS00004365A-page 5 MSCSM170TLM23C3AG Electrical Specifications 1.4 Typical SiC MOSFET Performance Curve This section shows the typical SiC MOSFET performance curves of the MSCSM170TLM23C3AG device. Figure 1-1. Maximum Thermal Impedance Figure 1-2. Output Characteristics, TJ = 25 °C © 2021 Microchip Technology Inc. and its subsidiaries Figure 1-3. Output Characteristics, TJ = 175 °C Datasheet DS00004365A-page 6 MSCSM170TLM23C3AG Electrical Specifications Figure 1-4. Normalized RDS(on) vs. Temperature Figure 1-5. Transfer Characteristics Figure 1-6. Switching Energy vs. Rg Figure 1-7. Switching Energy vs. Current © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 7 MSCSM170TLM23C3AG Electrical Specifications Figure 1-8. Capacitance vs. Drain Source Voltage Figure 1-9. Gate Charge vs. Gate Source Voltage Figure 1-10. Body Diode Characteristics, TJ = 25 °C Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 8 MSCSM170TLM23C3AG Electrical Specifications Figure 1-14. Operating Frequency vs Drain Current © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 9 MSCSM170TLM23C3AG Electrical Specifications 1.5 Typical SiC Diode Performance Curves This section shows the typical SiC diode performance curves of the MSCSM170TLM23C3AG device. Figure 1-15. Maximum Thermal Impedance Figure 1-16. Forward Characteristics © 2021 Microchip Technology Inc. and its subsidiaries Figure 1-17. Capacitance vs. Reverse Voltage Datasheet DS00004365A-page 10 MSCSM170TLM23C3AG Package Specifications 2. Package Specifications The following section shows the package specification of the MSCSM170TLM23C3AG device. Package Outline The following figure shows the package outline drawing of the MSCSM170TLM23C3AG device. The dimensions in the following figure are in millimeters. Figure 2-1. Package Outline Drawing 22 x 1,30 X 0,80 0,40 P 5 A B C P 5 0,80 7 17,6 ±0,5 2 [ME1] A 27,90 20,96 17,15 13,34 5,72 5,72 1,91 0 1,91 13,34 17,15 20,96 B1-C 1 C C 1,2,3,4 27,90 73 ±0,5 B2-C 2 4 X 12 ±0,10 MESURED O N ME1 R4 19 11,43 36,50 0 4,50 ±0,05 42,1 ±0,5 10,4 7,62 18,25 2.1 7,62 11,43 19 B4-C 4 B3-C 3 4X 2,50 ±0,10 4X 2 2 0,20 60 4,50 B B1,2,3,4 MESURED O N ME1 64 ±0,25 Note:  See AN3500A—Mounting Instructions for SP1F and SP3F Power Modules for more information.. © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 11 MSCSM170TLM23C3AG Revision History 3. Revision History Revision Date Description A 12/2021 This is the first publication of this document. © 2021 Microchip Technology Inc. and its subsidiaries Datasheet DS00004365A-page 12 MSCSM170TLM23C3AG The Microchip Website Microchip provides online support via our website at www.microchip.com/. This website is used to make files and information easily available to customers. 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