MSCSM70AM025CT6LIAG

MSCSM70AM025CT6LIAG Preliminary data VDSS = 700V RDSon = 2.5m typ @ Tj = 25°C ID = 689*A @ Tc = 25°C Very low stray inductance Phase leg SiC Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies  EV motor and traction drive  Features  SiC Power MOSFET - Low RDS(on) - High temperature performance  SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF      Very low stray inductance Internal thermistor for temperature monitoring M4 & M5 power connectors M2.5 signals connectors AlN substrate for improved thermal performance Benefits  High efficiency converter  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per SiC MOSFET) Symbol VDSS ID IDM VGS RDSon PD Parameter Drain - Source Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Tc = 25°C Tc = 80°C Tc = 25°C Max ratings 700 689* 548* 1380 -10/25 3.2 1882 Unit V A V m W *Specification of SiC MOSFET device but output current must be limited due to size of power connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MSCSM70AM025CT6LIAG – PD0 April, 2020 1–5 MSCSM70AM025CT6LIAG Preliminary data Electrical Characteristics (per SiC MOSFET) Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain – Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V ; VDS = 700V Tj = 25°C VGS = 20V ID = 240A Tj = 175°C VGS = VDS, ID = 24mA VGS = 20 V, VDS = 0V Min Typ 1.9 2.5 3.2 2.4 Max 600 3.2 Unit µA m 600 V nA Max Unit Dynamic Characteristics (per SiC MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V VDS = 700V f = 1MHz Min 348 Tf Fall Time Eon Turn on Energy Eoff Turn off Energy RGint Internal gate resistance RthJC Junction to Case Thermal Resistance VGS = -5/+20V VBus = 400V ID = 480A RGON = TBD  RGOFF = TBD  nC 210 40 VGS = -5/+20V VBus = 400V ID = 480A ; TJ = 150°C RGON = TBD  ; RGOFF = TBD  Turn-off Delay Time nF 1290 VGS= -5/20V VBus = 470V ID = 240A Rise Time Typ 27 3 0.17 35 ns 50 20 TJ = 150°C TBD µJ TJ = 150°C TBD µJ 1.25  0.08 °C/W Body diode ratings and characteristics (per SiC MOSFET) Symbol Characteristic VSD Diode Forward Voltage trr Qrr Irr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions VGS = 0V ; ISD = 240A VGS = -5V ; ISD = 240A Min ISD = 240A ; VGS = -5V VR = 400V ; diF/dt = 6000A/µs MSCSM70AM025CT6LIAG – PD0 April, 2020 Typ 3.4 3.8 38 1.9 89 Max Unit V ns µC A 2–5 MSCSM70AM025CT6LIAG Preliminary data SiC schottky diode ratings and characteristics (per SiC diode) Symbol Characteristic VRRM IRRM IF Test Conditions Typ Peak Repetitive Reverse Voltage Reverse Leakage Current VR = 400V f = 1MHz, VR = 200V 90 1500 300 1.5 1.9 798 1488 f = 1MHz, VR = 400V 1296 VR=700V DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Min IF = 300A Tj = 25°C Tj = 175°C Tc = 65°C Tj = 25°C Tj = 175°C Max Unit 700 1200 V µA A 1.8 V nC pF Junction to Case Thermal Resistance 0.167 °C/W Max Unit k % K % Temperature sensor NTC (see application note APT0406). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  Typ 50 5 3952 4 R25 T: Thermistor temperature   1 1  RT: Thermistor value at T   exp  B 25 / 85   T25 T   Thermal and Package characteristics Symbol VISOL TJ TJOP TSTG TC Torque LDC Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque For terminals To heatsink Module stray inductance between VBUS & 0/VBUS Package Weight MSCSM70AM025CT6LIAG – PD0 M2.5 M4 M5 M6 April, 2020 Min 4000 -40 -40 -40 -40 0.4 2 2 3 Max 175 TJmax -25 125 125 0.6 3 3.5 5 3 320 Unit V °C N.m nH g 3–5 MSCSM70AM025CT6LIAG Preliminary data Package outline (dimensions in mm) See application note AN1911 - Mounting instructions for SP6 Low inductance Power Module on www.microsemi.com MSCSM70AM025CT6LIAG – PD0 April, 2020 4–5 MSCSM70AM025CT6LIAG Preliminary data DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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