MSCSM70AM10T3AG

MSCSM70AM10T3AG Phase Leg SiC MOSFET Power Module Product Overview The MSCSM70AM10T3AG device is a full bridge 700V, 241A phase leg silicon carbide (SiC) MOSFET power module. Notes:  • Pins 25 to pins 28 must be shorted together • Pins 13 to pins 16 must be shorted together • Pins 18/19/20/22 must be shorted together • All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 1 MSCSM70AM10T3AG Features The following are key features of the MSCSM70AM10T3AG device: • • • • • SiC Power MOSFET – High speed switching – Low RDS(on) – Ultra low loss Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM70AM10T3AG device: • • • • • • • High efficiency converter Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Application The MSCSM70AM10T3AG device is designed for the following applications: • • • • Welding converters Switched mode power supplies Uninterruptible power supplies EV motor and traction drive © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 2 MSCSM70AM10T3AG Electrical Specifications 1. Electrical Specifications This section provides the electrical specifications of the MSCSM70AM10T3AG device. 1.1 SiC MOSFET Characteristics (Per SiC MOSFET) The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM70AM10T3AG device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-Source voltage 700 V ID Continuous drain current TC = 25 °C 2411 A TC = 80 °C 1921 IDM Pulsed drain current 482 VGS Gate-Source voltage –10/23 V RDS(on) Drain-Source ON resistance 9.5 mΩ PD Power dissipation 690 W TC = 25 °C Note:  1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors. The following table lists the electrical characteristics per SiC MOSFET of the MSCSM70AM10T3AG device. Table 1-2. Electrical Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current VGS = 0V VDS = 700V — — 200 µA RDS(on) Drain–Source on resistance VGS = 20V TJ = 25 °C — 7.5 9.5 mΩ ID = 80A TJ = 175 °C — 9.5 — VGS(th) Gate threshold voltage VGS = VDS ID = 8 mA 1.9 2.4 — V IGSS Gate–Source leakage current VGS = 20V; VDS = 0V — — 200 nA © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 3 MSCSM70AM10T3AG Electrical Specifications The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM70AM10T3AG device. Table 1-3. Dynamic Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0V — 9000 — pF Coss Output capacitance VDS = 700V — 1020 — Crss Reverse transfer capacitance f = 1 MHz — 58 — Qg Total gate charge VGS = –5V/20V — 430 — Qgs Gate-Source charge VBus = 470V — 116 — Qgd Gate-Drain charge ID = 80A — 70 — Td(on) Turn-on delay time VGS = –5V/20V TJ = 150 °C — 40 — Tr Rise time VBus = 400V — 40 — Turn-off delay time ID = 160A — 50 — Fall time RG(on) = 34Ω 20 — Td(off) Tf nC ns RG(off) = 2.4Ω Eon Turn-on energy VGS = –5V/20V TJ = 150 °C — 1790 — Eoff Turn-off energy VBus = 400V TJ = 150 °C — 388 — μJ ID = 160A RG(on) = 34Ω RG(off) = 2.4Ω RGint Internal gate resistance — 2.8 — Ω RthJC Junction-to-case thermal resistance — — 0.217 °C/W The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM70AM10T3AG device. Table 1-4. Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VSD Diode forward voltage VGS = 0V; ISD = 80A — 3.4 — V VGS = –5V; ISD = 80A — 3.8 — trr Reverse recovery time ISD = 80A; VGS = –5V — 38 — ns Qrr Reverse recovery charge VR = 400V; diF/dt = 2000 A/µs — 636 — nC Irr Reverse recovery current — 29.6 — A © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 4 MSCSM70AM10T3AG Electrical Specifications 1.2 Thermal and Package Characteristics The following table lists the thermal and package characteristics of the MSCSM70AM10T3AG device. Table 1-5. Thermal and Package Characteristics Symbol Characteristics Min. Max. Unit VISOL RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz 4000 — V TJ Operating junction temperature range –40 175 °C TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight — 110 g To heatsink M4 The following table lists the temperature sensor NTC of the MSCSM70AM10T3AG device. Table 1-6. Temperature Sensor NTC Symbol Characteristic Min. Typ. Max. Unit R25 Resistance at 25°C — 50 — kΩ ΔR25/R25 — — — 5 — % B25/85 T25 = 298.15 K — — 3952 — K ΔB/B — TC = 100 °C — 4 — % Note:  See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 5 MSCSM70AM10T3AG Electrical Specifications Typical SiC MOSFET Performance Curve This section shows the typical SiC MOSFET performance curves of the MSCSM70AM10T3AG device. Figure 1-1. Maximum Thermal Impedance ZTHJC (°C/W) 0.1 1 0.01 0.001 2 3 4 5 6 7 Ri (°C/W) 0.005 0.056 0.013 0.051 0.009 0.055 0.030 taui (s) 0.004 0.003 0.008 0.029 0.026 0.009 0.055 0.01 0.1 1 tim e (s) Figure 1-2. Output Characteristics, TJ = 25 °C Figure 1-3. Output Characteristics, TJ = 175 °C 300 TJ=25°C 250 V GS=20V 200 V GS=18V 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IDS, Drain Source Current (A) IDS, Drain Source Current (A) 300 TJ=175°C 250 V GS=20V 200 V GS=18V 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V DS , Drain Source Voltage (V) V DS , Drain Source Voltage (V) Figure 1-4. Normalized RDS(on) vs. Temperature Figure 1-5. Transfer Characteristics 300 1.40 IDS , Drain Source Current (A) RDSon, Drain Source ON resistance 1.3 VGS=20V I D=80A 1.30 1.20 1.10 1.00 0.90 0.80 25 50 75 100 125 150 250 200 150 100 and its subsidiaries 50 TJ=25°C 0 175 2 4 6 8 10 12 V GS, Gate Source Voltage (V) TJ, Junction Temperature (°C) © 2022 Microchip Technology Inc. TJ=175°C Data Sheet DS00004608A-page 6 MSCSM70AM10T3AG Electrical Specifications Figure 1-6. Switching Energy vs. Current Figure 1-7. Turn On Energy vs. Rg 2400 3500 VGS=-5/20V R GON=34Ω R GOFF=2.4Ω VBUS= 400V TJ = 150°C 1600 3200 Eon Losses (μJ) Losses (μJ) 2000 1200 800 Eof f 400 2900 Eon 2600 2300 VGS=-5/20V I D= 160A VBUS = 400V TJ = 150°C 2000 0 0 50 100 1700 200 150 30 35 Current (A) 50 45 Gate resistance (Ω) Figure 1-8. Capacitance vs. Drain Source Voltage Figure 1-9. Gate Charge vs. Gate Source Voltage 100000 20 Ciss 10000 Coss 1000 Crss 100 10 0 200 400 V GS, Gate to Source Voltage (V) C, Capacitance (pF) 40 600 15 10 5 0 -5 0 V DS , Drain source Voltage (V) Figure 1-10. Body Diode Characteristics, TJ = 25 °C TJ = 25°C I D = 80A VDS = 470V 100 200 300 400 Gate Charge (nC) Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C -5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -4 -3 -2 -1 -50 VGS=0V -100 -150 VGS=-2V -200 -250 TJ=25°C -50 VGS=0V -100 VGS=5V -150 VGS=18V -200 -250 VGS=20V V DS , Drain source voltage (V) V DS, Drain source voltage (V) and its subsidiaries TJ=25°C -300 -300 © 2022 Microchip Technology Inc. 0 0 IDS , Drain source current (A) IDS , Drain source current (A) 0 VGS=-5V 500 Data Sheet DS00004608A-page 7 MSCSM70AM10T3AG Electrical Specifications Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -5 VGS=-5V -50 VGS=0V -100 -150 VGS=-2V -200 -250 -4 -3 -2 -1 TJ=175°C -50 -100 VGS=0V VGS=5V -150 -200 VGS=18V TJ=175°C -300 -300 V DS , Drain source voltage (V) Figure 1-14. Operating Frequency vs Drain Current 600 VBUS=400V D=50% R GON=34Ω R GOFF =2.4Ω TJ=150°C TC=75°C 1050 300 Hard switching 200 Figure 1-15. Turn Off Energy vs. Rg 1200 Losses (μJ) Frequency (kHz) 400 -250 VGS=20V V DS , Drain source voltage (V) 500 0 0 IDS, Drain source current (A) IDS , Drain source current (A) 0 900 Eof f 750 600 VGS=-5/20V I D= 160A VBUS = 400V TJ = 150°C 450 100 300 2 0 0 40 80 120 160 200 2.5 3 3.5 4 4.5 5 Gate resistance (Ω) ID, Drain Current (A) © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 8 MSCSM70AM10T3AG Package Specifications 2. Package Specifications The following section shows the package specification of the MSCSM70AM10T3AG device. 2.1 Package Outline The following figure shows the package outline drawing of the MSCSM70AM10T3AG device. The dimensions in the following figure are in millimeters. Figure 2-1. Package Outline Drawing Note:  See AN3500A—Mounting instructions for SP1F and SP3F power modules for more information. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 9 MSCSM70AM10T3AG Revision History 3. Revision History Revision Date Description A 06/2022 Initial Revision © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004608A-page 10 MSCSM70AM10T3AG Microchip Information The Microchip Website Microchip provides online support via our website at www.microchip.com/. This website is used to make files and information easily available to customers. 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