MSCSM70AM19CT1AG

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MSCSM70AM19CT1AG Datasheet Phase Leg SiC MOSFET Power Module April 2020 Contents Contents 1 Revision History....................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 2 Product Overview..............................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 3 Electrical Specifications........................................................................................................................4 3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4 3.2 SiC Schottky Diode Ratings and Characteristics (Per SiC Diode).........................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 3.4 Typical SiC MOSFET Performance Curves...........................................................................................................7 3.5 Typical SiC Diode Performance Curves.............................................................................................................10 4 Package Specifications.....................................................................................................................11 4.1 Package Outline Drawing..................................................................................................................................11 Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in April 2020. It is the first publication of this document. Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSCSM70AM19CT1AG device is a phase leg 700 V,124 A full silicon carbide (SiC) power module. Figure 1 • MSCSM70AM19CT1AG Electrical Schematic Figure 2 • MSCSM70AM19CT1AG Pinout Location All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSCSM70AM19CT1AG device: • SiC Power MOSFET ◦ High speed switching ◦ Low RDS(on) ◦ Ultra-low loss • SiC Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCSM70AM19CT1AG device: • High efficiency converter • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals for power and signal, for easy PCB mounting • Low profile • RoHS compliant 2.3 Applications The MSCSM70AM19CT1AG device is designed for the following applications: • Welding converters • Switched mode power supplies • Uninterruptible power supplies (UPS) • EV motor and traction drive Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCSM70AM19CT1AG device. 3.1 SiC MOSFET Characteristics (Per MOSFET) The following table shows the absolute maximum ratings per MOSFET of the MSCSM70AM19CT1AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VDSS Drain-source voltage 700 V ID Continuous drain current TC = 25 °C 1241 A TC = 80 °C 981 IDM Pulsed drain current 250 VGS Gate-source voltage –10/25 V RDSon Drain source ON resistance 19 mΩ PD Power dissipation 365 W TC = 25 °C Note: 1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors. The following table shows the electrical characteristics per MOSFET of the MSCSM70AM19CT1AG device. Table 2 • Electrical Characteristics Symbol Characteristic Test Conditions IDSS Zero gate voltage drain current VGS = 0 V; VDS = 700 V RDS(on) Drain-source on resistance VGS = 20 V ID = 40 A VGS(th) Gate threshold voltage VGS = VDS, ID = 4 mA IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V Min Typ TJ = 25 °C 15 TJ = 175 °C 18.8 1.9 Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 Max Unit 100 µA 19 mΩ 2.4 V 150 nA 4 Electrical Specifications The following table shows the dynamic characteristics per MOSFET of the MSCSM70AM19CT1AG device. Table 3 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate–source charge Qgd Gate–drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Min Typ Max 4500 VDS = 700 V Unit pF 510 f = 1 MHz 29 VGS = –5 V/20 V 215 VBus = 470 V nC 58 ID= 40 A 35 VGS = –5 V/20 V 40 VBus = 400 V ns 35 ID = 80 A; TJ = 150 °C RGon = 27 Ω; RGoff = 4.7 Ω 50 20 Inductive switching TJ = 150 °C 545 µJ TJ = 150 °C 186 µJ 0.69 Ω VGS = –5 V/20 V Eoff Turn off energy VBus = 400 V ID = 80 A RGon = 27 Ω RGoff = 4.7 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.41 °C/W Max Unit The following table shows the body diode ratings and characteristics per MOSFET of the MSCSM70AM19CT1AG device. Table 4 • Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions VSD Diode Forward Voltage VGS = 0 V ; ISD = 40 A 3.4 VGS = –5 V ; ISD = 40 A 3.8 ISD = 40 A; VGS = –5 V 38 ns 318 nC 14.8 A trr Reverse recovery time Qrr Reverse recovery charge Irr Reverse recovery current Min VR = 400 V; diF/dt = 1000 A/μs Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 Typ V 5 Electrical Specifications 3.2 SiC Schottky Diode Ratings and Characteristics (Per SiC Diode) The following table shows the reverse SiC diode ratings and characteristics per SiC diode of the MSCSM70AM19CT1AG device. Table 5 • SiC Schottky Diode Ratings and Characteristics (Per SiC Diode) Symbol Characteristic VRRM Peak repetitive reverse voltage IRM Reverse leakage current IF DC forward current VF Diode forward voltage Min VR = 700 V IF = 50 A Typ TJ = 25 °C 15 TJ = 175 °C 250 TC = 80 °C 50 TJ= 25 °C 1.5 TJ = 175 °C 1.9 Max Unit 700 V 200 μA A 1.8 V Qc Total capacitive charge VR = 400 V 133 nC C Total capacitance f = 1 MHz, VR = 200 V 248 pF f = 1 MHz, VR = 400 V 216 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.86 °C/W Thermal and Package Characteristics The following table shows the package characteristics of the MSCSM70AM19CT1AG device. Table 6 • Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight 80 g To heatsink M4 Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 Max Unit V °C 6 Electrical Specifications The following table shows the temperature sensor NTC (see application note APT0406 on www.microsemi.com) of the MSCSM70AM19CT1AG device. Table 7 • Temperature Sensor NTC Symbol Characteristic R25 Resistance at 25 °C Min ∆R25/R25 B25/85 T25 = 298.15 K ∆B/B 3.4 TC = 100 °C Typ Max Unit 50 kΩ 5 % 3952 K 4 % Typical SiC MOSFET Performance Curves This sections shows the typical SiC MOSFET performance curves of the MSCSM70AM19CT1AG device. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ = 25 °C Figure 5 • Output Characteristics, TJ = 175 °C Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 7 Electrical Specifications Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Figure 8 • Capacitance vs. Drain Source Voltage Figure 9 • Gate Charge vs. Gate Source Voltage Figure 10 • Body Diode Characteristics, TJ = 25 °C Figure 11 • 3rd Quadrant Characteristics, TJ = 25 °C Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 8 Electrical Specifications Figure 12 • Body Diode Characteristics, TJ = 175 °C Figure 13 • 3rd Quadrant Characteristics, TJ = 175 °C Figure 14 • Switching Energy vs. Current Figure 15 • Turn On Energy vs. Rg Figure 16 • Turn Off Energy vs. Rg Figure 17 • Operating Frequency vs. Drain Current Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 9 Electrical Specifications 3.5 Typical SiC Diode Performance Curves This sections shows the typical SiC diode performance curves of the MSCSM70AM19CT1AG device. Figure 18 • Maximum Thermal Impedance Figure 19 • Forward Characteristics Figure 20 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 10 Package Specifications 4 Package Specifications This section shows the package specification of the MSCSM70AM19CT1AG device. 4.1 Package Outline Drawing The following figure illustrates the package outline of the MSCSM70AM19CT1AG device. The dimensions are in millimeters. Figure 21 • Package Outline Drawing Microsemi Proprietary and Confidential MSCSM70AM19CT1AG Datasheet Revision 1.0 11 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 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