MSCSM70HM19CT3AG

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MSCSM70HM19CT3AG Datasheet Full Bridge SiC MOSFET Power Module April 2020 Contents Contents 1 Revision History.................................................................................................................................1 Revision 1.0...............................................................................................................................................................1 2 Product Overview..............................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 3 Electrical Specifications.....................................................................................................................4 3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4 3.2 SiC Schottky Diode Ratings Characteristics.........................................................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 Typical SiC MOSFET Performance Curves.................................................................................................................7 Typical SiC Diode Performance...............................................................................................................................10 Package Specification.........................................................................................................................11 Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 ii Tables Tables Table 1 • Absolute Maximum Ratings..................................................................................................................................4 Table 2 • Electrical Characteristics........................................................................................................................................4 Table 3 • Dynamic Characteristics........................................................................................................................................5 Table 4 • Body Diode Ratings and Characteristics................................................................................................................5 Table 5 • SiC Schottky Diode Ratings and Characteristics.....................................................................................................6 Table 6 • Package Characteristics.........................................................................................................................................6 Table 7 • Temperature Sensor NTC1.....................................................................................................................................7 Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 iii Figures Figures Figure 1 • MSCSM70HM19CT3AG Electrical Schematic.......................................................................................................2 Figure 2 • MSCSM70HM19CT3AG Pinout Location..............................................................................................................2 Figure 3 • Maximum Thermal Impedance............................................................................................................................7 Figure 4 • Output Characteristics, TJ = 25 °C........................................................................................................................7 Figure 5 • Output Characteristics, TJ = 175 °C......................................................................................................................7 Figure 6 • Normalized RDS(on) vs. Temperature..................................................................................................................8 Figure 7 • Transfer Characteristics........................................................................................................................................8 Figure 8 • Capacitance vs. Drain Source Voltage..................................................................................................................8 Figure 9 • Gate Charge vs. Gate Source Voltage...................................................................................................................8 Figure 10 • Body Diode Characteristics, TJ = 25 °C...............................................................................................................8 Figure 11 • 3rd Quadrant Characteristics, TJ = 25 °C............................................................................................................8 Figure 12 • Body Diode Characteristics, TJ = 175 °C.............................................................................................................9 Figure 13 • 3rd Quadrant Characteristics, TJ = 175 °C..........................................................................................................9 Figure 14 • Switching Energy vs. Current.............................................................................................................................9 Figure 15 • Turn-on Energy vs. Rg........................................................................................................................................9 Figure 16 • Turn-off Energy vs. Rg........................................................................................................................................9 Figure 17 • Operating Frequency vs. Drain Current.............................................................................................................9 Figure 18 • Maximum Thermal Impedance........................................................................................................................10 Figure 19 • Forward Characteristics...................................................................................................................................10 Figure 20 • Capacitance vs. Reverse Voltage......................................................................................................................10 Figure 21 • Package Outline...............................................................................................................................................11 Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 iv Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 is the first publication of this document, published in April 2020. Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSCSM70HM19CT3AG is a full bridge 700 V/124 A full Silicon Carbide power module. Figure 1 • MSCSM70HM19CT3AG Electrical Schematic Figure 2 • MSCSM70HM19CT3AG Pinout Location All ratings at TJ = 25 °C unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSCSM70HM19CT3AG device: • SiC Power MOSFET ◦ High-speed switching ◦ Low RDS(on) ◦ Ultra low loss • Silicon carbide (SiC) Schottky diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature-independent switching behavior ◦ Positive temperature coefficient on VF • • • • 2.2 Kelvin source for easy drive Very low stray inductance Internal thermistor for temperature monitoring Aluminum nitride (AlN) substrate for improved thermal performance Benefits The following are benefits of the MSCSM70HM19CT3AG device: • High efficiency converter • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant 2.3 Applications The MSCSM70HM19CT3AG device is designed for the following applications: • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • EV motor and traction drive Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCSM70HM19CT3AG device. 3.1 SiC MOSFET Characteristics (Per MOSFET) This section describes the electrical characteristics of the MSCSM70HM19CT3AG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-source voltage 700 V ID Continuous drain current TC = 25 °C 1241 A TC = 80 °C 981 A IDM Pulsed drain current 250 A VGS Gate-source voltage –10/25 V RDSon Drain-source ON resistance 19 mΩ PD Power dissipation 365 W TC = 25 °C Note: 1. Specification of SiC MOSFET device but output current must be limited due to the size of power connectors. Table 2 • Electrical Characteristics Symbol Characteristic Test Conditions IDSS Zero gate voltage drain current VGS = 0V; VDS = 700 V RDSon Drain–source on resistance VGS = 20 V ID = 40 A VGS(th) Gate threshold voltage VGS = VDS, ID = 4 mA IGSS Gate–source leakage current VGS = 20 V, VDS = 0 V Min Typ TJ = 25 °C 15 TJ = 175 °C 18.8 1.9 Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 Max Unit 100 μA 19 mΩ 2.4 V 150 nA 4 Electrical Specifications Table 3 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V 4500 pF Coss Output capacitance VDS = 700 V f = 1 MHz 510 pF Crss Reverse transfer capacitance 29 pF Qg Total gate charge 215 nC 58 nC 35 nC 40 ns 35 ns 50 ns 20 ns TJ = 150 °C 545 μJ TJ = 150 °C 186 μJ 0.69 Ω Qgs Gate–source charge Qgd Gate–drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Min VGS= –5/20 V VBus = 470 V ID = 40 A VGS = –5/20 V VBus = 400 V ID = 80 A TJ = 150 °C RGon = 27 Ω; RGoff = 4.7 Ω Inductive Switching Typ Max Unit VGS = –5/20 V Eoff Turn off energy VBus = 400 V ID = 80 A RGon = 27 Ω RGoff = 4.7 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.41 °C/W Max Unit Table 4 • Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min Typ VSD Diode forward voltage VGS = 0 V; ISD = 40 A 3.4 VGS = –5 V; ISD = 40 A 3.8 ISD = 40 A; VGS = –5 V; VR = 400 V; diF/dt = 1000 A/μs 38 ns V trr Reverse recovery time Qrr Reverse recovery charge 318 nC Irr Reverse recovery current 14.8 A Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 5 Electrical Specifications 3.2 SiC Schottky Diode Ratings Characteristics This section shows the SiC Schottky diode ratings and characteristics of the device. Table 5 • SiC Schottky Diode Ratings and Characteristics Symbol Characteristic VRRM Peak repetitive reverse voltage IRRM Reverse leakage current IF Forward current VF Diode forward voltage Min VR = 700 V IF = 50 A Typ TJ = 25 °C 15 TJ = 175 °C 250 TC = 80 °C 50 TJ = 25 °C 1.5 TJ = 175 °C 1.9 Max Unit 700 V 200 μA A 1.8 V QC Total capacitive charge VR = 400 V 133 nC C Total capacitance f = 1 MHz, VR = 200 V 248 pF f = 1 MHz, VR = 400 V 216 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.86 °C/W Thermal and Package Characteristics This section shows the thermal and package characteristics of the device. Table 6 • Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 min, 50/60Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax –25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 2 3 N.m Wt Package weight 110 g To heatsink M4 Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 Max Unit V °C 6 Electrical Specifications Table 7 • Temperature Sensor NTC1 Symbol Characteristic R25 Resistance at 25 °C Min ΔR25/R25 B25/85 T25 = 298.15 K ΔB/B TC = 100 °C Typ Max Unit 50 kΩ 5 % 3952 K 4 % Note: 1. See application note APT0406 on www.microsemi.com. 3.4 Typical SiC MOSFET Performance Curves This section shows the typical performance curves of the MSCSM70HM19CT3AG SiC MOSFET. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ = 25 °C Figure 5 • Output Characteristics, TJ = 175 °C Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 7 Electrical Specifications Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Figure 8 • Capacitance vs. Drain Source Voltage Figure 9 • Gate Charge vs. Gate Source Voltage Figure 10 • Body Diode Characteristics, TJ = 25 °C Figure 11 • 3rd Quadrant Characteristics, TJ = 25 °C Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 8 Electrical Specifications Figure 12 • Body Diode Characteristics, TJ = 175 °C Figure 13 • 3rd Quadrant Characteristics, TJ = 175 °C Figure 14 • Switching Energy vs. Current Figure 15 • Turn-on Energy vs. Rg Figure 16 • Turn-off Energy vs. Rg Figure 17 • Operating Frequency vs. Drain Current Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 9 Electrical Specifications 3.5 Typical SiC Diode Performance This section shows the typical performance curves of the MSCSM70HM19CT3AG SiC diode. Figure 18 • Maximum Thermal Impedance Figure 19 • Forward Characteristics Figure 20 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 10 Package Specification 4 Package Specification This section shows the package outline of the MSCSM70HM19CT3AG device. All dimensions are in millimeters. Figure 21 • Package Outline See application note 1906 – Mounting Instructions for SP3F Power Modules on www.microsemi.com. Microsemi Proprietary and Confidential MSCSM70HM19CT3AG Datasheet Revision 1.0 11 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. 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