MSCSM70HM19T3AG
Full Bridge SiC MOSFET Power Module
Product Overview
The MSCSM70HM19T3AG device is a full bridge 700V, 124A silicon carbide (SiC) power module.
Notes:
• All multiple inputs and outputs must be shorted together. Example: 13/14, 29/30, 22/23, and so on.
• All ratings at TJ = 25 °C, unless otherwise specified.
CAUTION
These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 1
MSCSM70HM19T3AG
Features
The following are key features of the MSCSM70HM19T3AG device:
•
•
•
•
•
SiC Power MOSFET
– High speed switching
– Low RDS(on)
– Ultra low loss
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
The following are the benefits of MSCSM70HM19T3AG device:
•
•
•
•
•
•
•
High efficiency converter
Outstanding performance at high frequency operation
Solderable terminals both for power and signal for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Low profile
RoHS compliant
Application
The MSCSM70HM19T3AG device is designed for the following applications:
•
•
•
•
Welding converters
Switched mode power supplies
Uninterruptible power supplies
EV motor and traction drive
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 2
MSCSM70HM19T3AG
Electrical Specifications
1.
Electrical Specifications
This section provides the electrical specifications of the MSCSM70HM19T3AG device.
1.1
SiC MOSFET Characteristics (Per SiC MOSFET)
The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM70HM19T3AG device.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VDSS
Drain-Source voltage
700
V
ID
Continuous drain current
TC = 25 °C
1241
A
TC = 80 °C
981
IDM
Pulsed drain current
250
VGS
Gate-Source voltage
–10/23
V
RDS(on)
Drain-Source ON resistance
19
mΩ
PD
Power dissipation
365
W
TC = 25 °C
Note:
1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors.
The following table lists the electrical characteristics per SiC MOSFET of the MSCSM70HM19T3AG device.
Table 1-2. Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
IDSS
Zero gate voltage drain
current
VGS = 0V
VDS = 700V
—
—
100
µA
RDS(on)
Drain–Source on
resistance
VGS = 20V
TJ = 25 °C
—
15
19
mΩ
ID = 40A
TJ = 175 °C
—
18.8
—
VGS(th)
Gate threshold voltage
VGS = VDS
ID = 4 mA
1.9
2.4
—
V
IGSS
Gate–Source leakage
current
VGS = 20V; VDS = 0V
—
—
150
nA
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 3
MSCSM70HM19T3AG
Electrical Specifications
The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM70HM19T3AG device.
Table 1-3. Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VGS = 0V
—
4500
—
pF
Coss
Output capacitance
VDS = 700V
—
510
—
Crss
Reverse transfer
capacitance
f = 1 MHz
—
29
—
Qg
Total gate charge
VGS = –5V/20V
—
215
—
Qgs
Gate-Source charge
VBus = 470V
—
58
—
Qgd
Gate-Drain charge
ID = 40A
—
35
—
Td(on)
Turn-on delay time
VGS = –5V/20V
—
40
—
Tr
Rise time
VBus = 400V
—
40
—
Turn-off delay time
ID = 80A
—
50
—
Fall time
RG(on) = 68Ω
20
—
Td(off)
Tf
TJ = 150°C
nC
ns
RG(off) = 4.7Ω
Eon
Turn-on energy
VGS = –5V/20V
TJ = 150 °C —
893
—
Eoff
Turn-off energy
VBus = 400V
TJ = 150 °C —
194
—
μJ
ID = 80A
RG(on) = 68Ω
RG(off) = 4.7Ω
RGint
Internal gate resistance
—
0.69
—
Ω
RthJC
Junction-to-case thermal resistance
—
—
0.41
°C/W
The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM70HM19T3AG
device.
Table 1-4. Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Diode forward voltage
VGS = 0V; ISD = 40A
—
3.4
—
V
VGS = –5V; ISD = 40A
—
3.8
—
trr
Reverse recovery time
ISD = 40A; VGS = –5V
—
38
—
ns
Qrr
Reverse recovery charge
VR = 400V; diF/dt = 1000 A/µs
—
318
—
nC
Irr
Reverse recovery current
—
14.8
—
A
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 4
MSCSM70HM19T3AG
Electrical Specifications
1.2
Thermal and Package Characteristics
The following table lists the thermal and package characteristics of the MSCSM70HM19T3AG device.
Table 1-5. Thermal and Package Characteristics
Symbol
Characteristics
Min.
Max.
Unit
VISOL
RMS isolation voltage, any terminal to case t =1 min, 50 Hz/60 Hz
4000
—
V
TJ
Operating junction temperature range
–40
175
°C
TJOP
Recommended junction temperature under switching conditions
–40
TJmax–25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
2
3
N.m
Wt
Package weight
—
110
g
To heatsink
M4
The following table lists the temperature sensor NTC of the MSCSM70HM19T3AG device.
Table 1-6. Temperature Sensor NTC
Symbol
Characteristic
Min.
Typ.
Max.
Unit
R25
Resistance at 25°C
—
50
—
kΩ
ΔR25/R25
—
—
5
—
%
B25/85
T25 = 298.15 K
—
3952
—
K
ΔB/B
—
—
4
—
%
TC = 100 °C
Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information.
1.3
Typical SiC MOSFET Performance Curve
This section shows the typical SiC MOSFET performance curves of the MSCSM70HM19T3AG device.
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 5
MSCSM70HM19T3AG
Electrical Specifications
Figure 1-1. Maximum Thermal Impedance
ZTHJC (°C/W)
1
0.1
1
0.01
0.001
2
3
4
5
6
7
Ri (°C/W)
0.008 0.105 0.025 0.095 0.016 0.104 0.056
taui (s)
0.004 0.003 0.008 0.029 0.026 0.009 0.055
0.01
0.1
1
tim e (s)
Figure 1-2. Output Characteristics, TJ = 25 °C
Figure 1-3. Output Characteristics, TJ = 175 °C
150
TJ=25°C
125
V GS=20V
100
V GS=18V
75
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IDS, Drain Source Current (A)
IDS, Drain Source Current (A)
150
TJ=175°C
125
V GS=20V
100
V GS=18V
75
50
25
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V DS , Drain Source Voltage (V)
V DS , Drain Source Voltage (V)
Figure 1-5. Transfer Characteristics
150
1.40
IDS , Drain Source Current (A)
RDSon, Drain Source ON resistance
Figure 1-4. Normalized RDS(on) vs. Temperature
VGS=20V
I D=40A
1.30
1.20
1.10
1.00
0.90
0.80
25
50
75
100
125
150
and its subsidiaries
100
TJ=175°C
75
50
25
TJ=25°C
0
175
2
4
6
8
10
12
V GS, Gate Source Voltage (V)
TJ, Junction Temperature (°C)
© 2022 Microchip Technology Inc.
125
Data Sheet
DS00004607A-page 6
MSCSM70HM19T3AG
Electrical Specifications
Figure 1-6. Switching Energy vs. Current
Figure 1-7. Turn On Energy vs. Rg
1200
800
1550
Eon
Losses (μJ)
Losses (μJ)
1700
VGS=-5/20V
R GON=68Ω
R GOFF=4.7Ω
VBUS= 400V
TJ = 150°C
1000
600
400
Eof f
Eon
1400
1250
1100
200
VGS=-5/20V
I D= 80A
VBUS = 400V
TJ = 150°C
950
0
0
20
40
60
800
100
80
65
70
Current (A)
80
85
90
95
Figure 1-9. Gate Charge vs. Gate Source Voltage
10000
Ciss
1000
Coss
100
10
0
200
400
V GS, Gate to Source Voltage (V)
20
Crss
TJ = 25°C
I D = 40A
VDS = 470V
15
10
5
0
-5
600
0
50
V DS , Drain source Voltage (V)
100
150
200
Gate Charge (nC)
Figure 1-10. Body Diode Characteristics, TJ = 25 °C
Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C
-5
-5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5
-4
-3
-2
-1
-25
VGS=0V
-50
-75
VGS=-2V
-100
-125
TJ=25°C
IDS , Drain source current (A)
VGS=-5V
and its subsidiaries
TJ=25°C
-25
VGS=0V
-50
VGS=5V
-75
VGS=18V
-100
-125
VGS=20V
-150
-150
V DS , Drain source voltage (V)
V DS, Drain source voltage (V)
© 2022 Microchip Technology Inc.
0
0
0
IDS , Drain source current (A)
100
Gate resistance (Ω)
Figure 1-8. Capacitance vs. Drain Source Voltage
C, Capacitance (pF)
75
Data Sheet
DS00004607A-page 7
MSCSM70HM19T3AG
Electrical Specifications
Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C
-5
IDS , Drain source current (A)
0
VGS=-5V
-25
VGS=0V
-50
-75
VGS=-2V
-100
-125
IDS, Drain source current (A)
-4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0
-4
-3
-2
0
0
TJ=175°C
-25
-50
VGS=0V
VGS=5V
-75
-100
VGS=18V
TJ=175°C
-125
VGS=20V
-150
-150
V DS , Drain source voltage (V)
V DS , Drain source voltage (V)
Figure 1-14. Operating Frequency vs Drain Current
Figure 1-15. Turn Off Energy vs. Rg
600
600
VBUS=400V
D=50%
R GON=68Ω
R GOFF =4.7Ω
TJ=150°C
TC=75°C
400
500
Losses (μJ)
500
Frequency (kHz)
-1
300
Hard
switching
200
Eof f
400
300
VGS=-5/20V
I D= 80A
VBUS = 400V
TJ = 150°C
200
100
0
0
20
40
60
80
100
100
4
and its subsidiaries
6
7
8
9
10
Gate resistance (Ω)
ID, Drain Current (A)
© 2022 Microchip Technology Inc.
5
Data Sheet
DS00004607A-page 8
MSCSM70HM19T3AG
Package Specifications
2.
Package Specifications
The following section shows the package specification of the MSCSM70HM19T3AG device.
2.1
Package Outline
The following figure shows the package outline drawing of the MSCSM70HM19T3AG device. The dimensions in the
following figure are in millimeters.
Figure 2-1. Package Outline Drawing
Note: See AN3500A—Mounting Instructions for SP1F and SP3F Power Modules for more information.
© 2022 Microchip Technology Inc.
and its subsidiaries
Data Sheet
DS00004607A-page 9
MSCSM70HM19T3AG
Revision History
3.
Revision History
Revision
Date
Description
A
06/2022
Initial Release
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Data Sheet
DS00004607A-page 10
MSCSM70HM19T3AG
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Data Sheet
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MSCSM70HM19T3AG
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Data Sheet
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MSCSM70HM19T3AG
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and its subsidiaries
Data Sheet
DS00004607A-page 14