MSCSM70TAM10CTPAG

. MSCSM70TAM10CTPAG Datasheet Triple Phase Leg SiC MOSFET Power Module April 2020 Contents Contents 1 Revision History.................................................................................................................................1 1.1 Revision 1.0.........................................................................................................................................................1 2 Product Overview..............................................................................................................................2 2.1 Features..............................................................................................................................................................3 2.2 Benefits...............................................................................................................................................................3 2.3 Applications........................................................................................................................................................3 3 Electrical Specifications.....................................................................................................................4 3.1 SiC MOSFET Characteristics (Per MOSFET).........................................................................................................4 3.2 SiC Schottky Diode Ratings and Characteristics..................................................................................................6 3.3 Thermal and Package Characteristics.................................................................................................................6 3.4 Typical SiC MOSFET Performance Curves...........................................................................................................8 3.5 Typical SiC Diode Performance Curves.............................................................................................................11 4 Package Specifications.....................................................................................................................12 4.1 Package Outline Drawing..................................................................................................................................12 Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 ii Revision History 1 Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. 1.1 Revision 1.0 Revision 1.0 was published in April 2020. It is the first publication of this document. Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 1 Product Overview 2 Product Overview The MSCSM70TAM10CTPAG device is a triple phase leg 700 V/238 A full silicon carbide (SiC) power module. Figure 1 • MSCSM70TAM10CTPAG Electric Schematic Figure 2 • MSCSM70TAM10CTPAG Pinout Location All ratings at TJ = 25 °C, unless otherwise specified. Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be followed. Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 2 Product Overview 2.1 Features The following are key features of the MSCSM70TAM10CTPAG device: • SiC Power MOSFET ◦ Low RDS(on) ◦ High-speed switching ◦ Ultra low loss • SiC Schottky Diode ◦ Zero reverse recovery ◦ Zero forward recovery ◦ Temperature independent switching behavior ◦ Positive temperature coefficient on VF • Very low stray inductance • Kelvin source for easy drive • Internal thermistor for temperature monitoring • Aluminum nitride (AlN) substrate for improved thermal performance 2.2 Benefits The following are benefits of the MSCSM70TAM10CTPAG device: • High-efficiency converter • Outstanding performance at high-frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals for power and signal, for easy PCB mounting • Low profile • RoHS compliant 2.3 Applications The MSCSM70TAM10CTPAG device is designed for the following applications: • Uninterruptible power supplies • Switched mode power supplies • EV motor and traction drive • Welding converters Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 3 Electrical Specifications 3 Electrical Specifications This section shows the electrical specifications of the MSCSM70TAM10CTPAG device. 3.1 SiC MOSFET Characteristics (Per MOSFET) The following table shows the absolute maximum ratings per SiC MOSFET of the MSCSM70TAM10CTPAG device. Table 1 • Absolute Maximum Ratings Symbol Parameter Max Ratings Unit VDSS Drain-source voltage 700 V ID Continuous drain current TC = 25 °C 2381 A TC = 80 °C 1891 IDM Pulsed drain current 476 VGS Gate-source voltage –10/25 V RDSon Drain-source ON resistance 9.5 mΩ PD Power dissipation 674 W TC = 25 °C Note: 1. Specification of the SiC MOSFET device, but output current must be limited due to size of power connectors. The following table shows the electrical characteristics per SiC MOSFET of the MSCSM70TAM10CTPAG device. Table 2 • Electrical Characteristics Symbol Characteristic Test Conditions IDSS Zero gate voltage drain current VGS = 0 V; VDS = 700 V RDS(on) Drain-source on resistance VGS = 20 V ID = 80 A VGS(th) Gate threshold voltage VGS = VDS, ID = 8 mA IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V Min Typ TJ = 25 °C 7.5 TJ = 175 °C 9.5 1.9 Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 Max Unit 200 µA 9.5 mΩ 2.4 V 200 nA 4 Electrical Specifications The following table shows the dynamic characteristics per SiC MOSFET of the MSCSM70TAM10CTPAG device. Table 3 • Dynamic Characteristics Symbol Characteristic Test Conditions Ciss Input capacitance VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Td(on) Turn-on delay time Tr Rise time Td(off) Turn-off delay time Tf Fall time Eon Turn on energy Min Typ Max 9000 VDS = 700 V Unit pF 1020 f = 1 MHz 58 VGS = –5 V/20 V 430 VBus = 470 V nC 116 ID= 80 A 70 VGS = –5 V/20 V 40 VBus = 400 V ns 35 ID = 160 A; TJ = 150 °C RGon = 13.5 Ω; RGoff = 2.4 Ω 50 20 Inductive switching TJ = 150 °C 1090 µJ TJ = 150 °C 372 µJ 2.8 Ω VGS = –5 V/20 V Eoff Turn off energy VBus = 400 V ID = 160 A RGon = 13.5 Ω RGoff = 2.4 Ω RGint Internal gate resistance RthJC Junction-to-case thermal resistance 0.222 °C/W The following table shows the body diode ratings and characteristics per SiC MOSFET of the MSCSM70TAM10CTPAG device. Table 4 • Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions VSD Diode forward voltage VGS = 0 V; ISD = 80 A 3.4 VGS = –5V ; ISD = 80 A 3.8 ISD = 80 A; VGS = –5 V 38 ns 636 nC 29.6 A trr Reverse recovery time Qrr Reverse recovery charge Irr Reverse recovery current VR = 400 V; diF/dt = 2000 A/μs Min Typ Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 Max Unit V 5 Electrical Specifications 3.2 SiC Schottky Diode Ratings and Characteristics The following table shows the SiC Schottky diode ratings and characteristics of the MSCSM70TAM10CTPAG device. Table 5 • SiC Schottky Diode Ratings and Characteristics (Per SiC Diode) Symbol Characteristic VRRM Peak repetitive reverse voltage IRM Reverse leakage current IF DC forward current VF Diode forward voltage Min VR = 700 V IF = 100 A Typ TJ = 25 °C 30 TJ = 175 °C 500 TC = 70 °C 100 TJ= 25 °C 1.5 TJ = 175 °C 1.9 Max Unit 700 V 400 μA A 1.8 V Qc Total capacitive charge VR = 400 V 266 nC C Total capacitance f = 1 MHz, VR = 200 V 496 pF f = 1 MHz, VR = 400 V 432 RthJC 3.3 Test Conditions Junction-to-case thermal resistance 0.466 °C/W Thermal and Package Characteristics The following table shows the package characteristics of the MSCSM70TAM10CTPAG device. Table 6 • Thermal and Package Characteristics Symbol Characteristic Min VISOL RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000 TJ Operating junction temperature range –40 175 TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage temperature range –40 125 TC Operating case temperature –40 125 Torque Mounting torque 3 5 N.m Wt Package weight 250 g To heatsink M6 Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 Max Unit V °C 6 Electrical Specifications The following table shows the temperature sensor NTC (see application note APT0406 on www.microsemi.com) of the MSCSM70TAM10CTPAG device. Table 7 • Temperature Sensor NTC Symbol Characteristic R25 Resistance at 25 °C Min ∆R25/R25 B25/85 ∆B/B T25 = 298.15 K TC = 100 °C Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 Typ Max Unit 50 kΩ 5 % 3952 K 4 % 7 Electrical Specifications 3.4 Typical SiC MOSFET Performance Curves This sections shows the typical SiC MOSFET performance curves of the MSCSM70TAM10CTPAG device. Figure 3 • Maximum Thermal Impedance Figure 4 • Output Characteristics, TJ = 25 °C Figure 5 • Output Characteristics, TJ = 175 °C Figure 6 • Normalized RDS(on) vs. Temperature Figure 7 • Transfer Characteristics Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 8 Electrical Specifications Figure 8 • Capacitance vs. Drain Source Voltage Figure 9 • Gate Charge vs. Gate Source Voltage Figure 10 • Body Diode Characteristics, TJ = 25 °C Figure 11 • 3rd Quadrant Characteristics, TJ = 25 °C Figure 12 • Body Diode Characteristics, TJ = 175 °C Figure 13 • 3rd Quadrant Characteristics, TJ = 175 °C Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 9 Electrical Specifications Figure 14 • Switching Energy vs. Current Figure 15 • Turn On Energy vs. Rg Figure 16 • Turn Off Energy vs. Rg Figure 17 • Operating Frequency vs Drain Current Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 10 Electrical Specifications 3.5 Typical SiC Diode Performance Curves This sections shows the typical SiC diode performance curves of the MSCSM70TAM10CTPAG device. Figure 18 • Maximum Thermal Impedance Figure 19 • Forward Characteristics Figure 20 • Capacitance vs. Reverse Voltage Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 11 Package Specifications 4 Package Specifications This section shows the package specification of the MSCSM70TAM10CTPAG device. 4.1 Package Outline Drawing This section shows the package outline drawing of the MSCSM70TAM10CTPAG device. The dimensions in the following figure are in millimeters. Figure 21 • Package Outline Drawing Note: See application note 1902 - Mounting Instructions for SP6-P (12 mm) Power Modules on www.microsemi.com. Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 12 Legal Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. MSCC-0344-DS-01081 Microsemi Proprietary and Confidential MSCSM70TAM10CTPAG Datasheet Revision 1.0 13