.
MSCSM70VM10C4AG
Datasheet
Vienna Rectifier Phase Leg SiC Power
Module
April 2020
Contents
Contents
1 Revision History.................................................................................................................................1
Revision 1.0...............................................................................................................................................................1
Product Overview.................................................................................................................................2
2.1 Features..............................................................................................................................................................3
2.2 Benefits...............................................................................................................................................................3
2.3 Applications........................................................................................................................................................3
Electrical Specifications........................................................................................................................4
3.1 SiC MOSFET Characteristics (per SiC MOSFET)...................................................................................................4
3.2 SiC Schottky Diode Ratings Characteristics (per SiC Diode)................................................................................6
3.3 Diode Characteristics..........................................................................................................................................7
3.4 Thyristor Characteristics.....................................................................................................................................7
3.5 Thermal and Package Characteristics.................................................................................................................8
3.6 Typical SiC MOSFET Performance Curves...........................................................................................................9
3.7 Typical SiC Diode Performance Curves.............................................................................................................11
3.8 Typical CR1 Diode Curves..................................................................................................................................12
Package Specification.........................................................................................................................13
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Tables
Tables
Table 1 • Absolute Maximum Ratings..................................................................................................................................4
Table 2 • Electrical Characteristics........................................................................................................................................4
Table 3 • Dynamic Characteristics........................................................................................................................................5
Table 4 • Body Diode Ratings and Characteristics................................................................................................................5
Table 5 • Absolute Maximum Ratings..................................................................................................................................6
Table 6 • SiC Schottky Diode Ratings and Characteristics.....................................................................................................6
Table 7 • Absolute Maximum Ratings..................................................................................................................................7
Table 8 • Electrical Characteristics........................................................................................................................................7
Table 9 • Absolute Maximum Ratings..................................................................................................................................7
Table 10 • Electrical Characteristics......................................................................................................................................8
Table 11 • Package Characteristics.......................................................................................................................................8
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Figures
Figures
Figure 1 • MSCSM70VM10C4AG Electrical Schematic.........................................................................................................2
Figure 2 • MSCSM70VM10C4AG Pinout Location................................................................................................................2
Figure 3 • Maximum Thermal Impedance............................................................................................................................9
Figure 4 • Output Characteristics at TJ = 25 °C.....................................................................................................................9
Figure 5 • Output Characteristics at TJ = 175 °C...................................................................................................................9
Figure 6 • Normalized RDS(on) vs. Temperature..................................................................................................................9
Figure 7 • Transfer Characteristics........................................................................................................................................9
Figure 8 • Capacitance vs. Drain Source Voltage................................................................................................................10
Figure 9 • Gate Charge vs. Gate Source Voltage.................................................................................................................10
Figure 10 • Body Diode Char, TJ = 25 °C.............................................................................................................................10
Figure 11 • 3rd Quadrant Char, TJ = 25 °C..........................................................................................................................10
Figure 12 • Body Diode Char, TJ = 175 °C...........................................................................................................................10
Figure 13 • 3rd Quadrant Char, TJ = 175 °C........................................................................................................................10
Figure 14 • Switching Energy vs. Current...........................................................................................................................11
Figure 15 • Turn-on Energy vs. Rg......................................................................................................................................11
Figure 16 • Operating Frequency vs. Drain Current...........................................................................................................11
Figure 17 • Turn-off Energy vs. Rg......................................................................................................................................11
Figure 18 • Maximum Thermal Impedance........................................................................................................................11
Figure 19 • Forward Characteristics...................................................................................................................................12
Figure 20 • Capacitance vs. Reverse Voltage......................................................................................................................12
Figure 21 • Maximum Thermal Impedance........................................................................................................................12
Figure 22 • Forward Characteristics...................................................................................................................................12
Figure 23 • Package Outline...............................................................................................................................................13
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Revision History
1
Revision History
The revision history describes the changes that were implemented in the document. The changes are listed
by revision, starting with the most current publication.
1.1
Revision 1.0
Revision 1.0 is the first publication of this document, published in April 2020.
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Product Overview
2
Product Overview
The MSCSM70VM10C4AG is Vienna Rectifier phase leg 700 V/241 A full Silicon Carbide power module.
Figure 1 • MSCSM70VM10C4AG Electrical Schematic
Figure 2 • MSCSM70VM10C4AG Pinout Location
All ratings at TJ = 25 °C unless otherwise specified.
Caution: These devices are sensitive to electrostatic discharge. Proper handling procedures should be
followed.
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Product Overview
2.1
Features
The following are key features of the MSCSM70VM10C4AG device:
• SiC Power MOSFET
◦ Low RDS(on)
◦ High temperature performance
• Silicon carbide (SiC) Schottky diode (CR2 and CR3)
◦ Zero reverse recovery
◦ Zero forward recovery
◦ Temperature-independent switching behavior
◦ Positive temperature coefficient on VF
•
•
•
•
2.2
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Aluminum nitride (AlN) substrate for improved thermal performance
Benefits
The following are benefits of the MSCSM70VM10C4AG device:
• Outstanding performance at high-frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction-to-case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS compliant
2.3
Applications
The MSCSM70VM10C4AG device is designed for the following applications:
• Plasma and induction heating
• Uninterruptible power supplies
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Electrical Specifications
3
Electrical Specifications
This section shows the electrical specifications of the MSCSM70VM10C4AG device.
3.1
SiC MOSFET Characteristics (per SiC MOSFET)
This section describes the electrical characteristics of the MSCSM70VM10C4AG (Q1 and Q2) device.
Table 1 • Absolute Maximum Ratings
Symbol
Parameter
Maximum Ratings
Unit
VDSS
Drain-source voltage
700
V
ID
Continuous drain current
TC = 25 °C
238
A
TC = 80 °C
189
IDM
Pulsed drain current
476
VGS
Gate-source voltage
–10/25
V
RDSon
Drain-source ON resistance
9.5
mΩ
PD
Power dissipation
674
W
TC = 25 °C
Table 2 • Electrical Characteristics
Symbol
Characteristic
Test Conditions
IDSS
Zero gate voltage drain current
VGS = 0 V; VDS = 700 V
RDSon
Drain–source on resistance
VGS = 20 V
ID = 80 A
VGS(th)
Gate threshold voltage
VGS = VDS, ID = 8 mA
IGSS
Gate–source leakage current
VGS = 20 V, VDS = 0 V
Min
Typ
TJ = 25 °C
7.5
TJ = 175 °C
9.5
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Max
Unit
200
μA
9.5
mΩ
2.4
V
200
nA
4
Electrical Specifications
Table 3 • Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Ciss
Input capacitance
VGS = 0 V
9000
Coss
Output capacitance
VDS = 700 V
f = 1 MHz
1020
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate–source charge
Qgd
Gate–drain charge
Td(on)
Turn-on delay time
Min
Typ
Max
pF
58
VGS= –5/20 V
430
VBus = 470 V
nC
116
ID = 80 A
70
VGS = –5/20 V
40
ns
VBus = 400 V
Tr
Rise time
Td(off)
Turn-off delay time
Tf
Fall time
Eon
Turn on energy
Eoff
Turn off energy
Unit
35
ID = 160 A
TJ = 150 °C
50
RGon = 13.5 Ω; RGoff = 2.4 Ω
20
VGS = –5/20 V
VBus = 400 V
ID = 160 A
TJ = 150 °C
1090
µJ
TJ = 150 °C
372
µJ
2.8
Ω
RGon = 13.5 Ω
RGoff = 2.4 Ω
RGint
Internal gate resistance
RthJC
Junction-to-case thermal resistance
0.222
°C/W
Table 4 • Body Diode Ratings and Characteristics
Symbol
Characteristic
Test Conditions
VSD
Diode forward voltage
VGS = 0 V ; ISD = 80 A
3.4
VGS = –5 V ; ISD = 80 A
3.8
ISD = 80 A ; VGS = –5 V
38
ns
636
nC
29.6
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irr
Reverse recovery current
VR = 400 V ; diF/dt = 2000 A/µs
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Min
Typ
Max
Unit
V
5
Electrical Specifications
3.2
SiC Schottky Diode Ratings Characteristics (per SiC Diode)
This section shows the SiC Schottky diode (CR2 and CR3) ratings and characteristics of the device.
Table 5 • Absolute Maximum Ratings
Symbol
Parameter
Max Ratings
Unit
VRRM
Peak repetitive reverse voltage
700
V
IF
DC forward current
TC = 70 °C
100
A
PD
Power dissipation
TC = 25 °C
322
W
Table 6 • SiC Schottky Diode Ratings and Characteristics
Symbol
Characteristic
VRRM
Peak repetitive reverse voltage
IRRM
Reverse leakage current
VF
Diode forward voltage
Test Conditions
VR = 700 V
IF = 100 A
Min
Typ
TJ = 25 °C
30
TJ = 175 °C
500
TJ = 25 °C
1.5
TJ = 175 °C
1.9
Max
Unit
700
V
400
μA
1.8
V
QC
Total capacitive charge
VR = 400 V
266
nC
C
Total capacitance
f = 1 MHz, VR = 200 V
496
pF
f = 1 MHz, VR = 400 V
432
RthJC
Junction-to-case thermal resistance
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0.466
°C/W
6
Electrical Specifications
3.3
Diode Characteristics
This section shows the electrical characteristics and ratings of the CR1 diode.
Table 7 • Absolute Maximum Ratings
Symbol
Parameter
Max Ratings
Unit
VRRM
Peak repetitive reverse voltage
1600
V
IF
DC forward current
TC = 80 °C
200
A
IFSM
Non-repetitive forward surge
current
TJ = 25 °C
1600
PD
Power dissipation
TC = 25 °C
400
t = 10 ms
W
Table 8 • Electrical Characteristics
3.4
Symbol
Characteristic
Test Conditions
IR
Reverse current
VR = 1600 V
VF
Forward voltage
IF = 77 A
Min
Typ
Max
Unit
50
μA
V
TJ = 25 °C
1
1.21
TJ = 125 °C
0.9
1.1
VT
On–state voltage
0.83
V
rT
On–state slope resistance
2.2
mΩ
RthJC
Junction-to-case thermal resistance
0.32
°C/W
Thyristor Characteristics
This section shows the electrical characteristics and ratings of the thyristor (Q3).
Table 9 • Absolute Maximum Ratings
Symbol
Parameter
Max Ratings
Unit
VDRM
Repetitive peak reverse voltage
1600
V
IDRM
Repetitive peak reverse current
3
mA
ITRMS
RMS on–state current
TC = 100 °C
60
A
ITSM
Surge on–state current
TJ = 45 °C
520
VRGM
Peak reverse gate voltage
PD
Power dissipation
t = 10 ms
TC = 25 °C
10
V
357
W
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Electrical Specifications
Table 10 • Electrical Characteristics
3.5
Symbol
Characteristic
Test Conditions
VT
On–state Voltage
IT = 60 A
VTO
Min
Typ
Max
Unit
TJ = 25 °C
1.41
V
Direct on state threshold voltage
TJ = 125 °C
0.85
rT
On–state Slope resistance
TJ = 125 °C
10
mΩ
VGT
Gate trigger voltage
TJ = 25 °C
1.5
V
IGT
Gate trigger current
50
mA
RthJC
Junction-to-case thermal resistance
0.35
°C/W
Thermal and Package Characteristics
This section shows the thermal and package characteristics of the device.
Table 11 • Package Characteristics
Symbol
Characteristic
Min
Max
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60 Hz
4000
TJ
Operating junction temperature range
Q3, CR1
–40
150
Q1, Q2, CR2, CR3
–40
175
Unit
V
°C
TJOP
Recommended junction temperature under switching conditions
–40
TJmax – 25
TSTG
Storage temperature range
–40
125
TC
Operating case temperature
–40
125
Torque
Mounting torque
2.5
4.7
N.m
Weight
Package weight
160
g
To Heatsink
M5
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Electrical Specifications
3.6
Typical SiC MOSFET Performance Curves
This section shows the typical performance curves of the MSCSM70VM10C4AG SiC MOSFET.
Figure 3 • Maximum Thermal Impedance
Figure 4 • Output Characteristics at TJ = 25 °C
Figure 5 • Output Characteristics at TJ = 175 °C
Figure 6 • Normalized RDS(on) vs. Temperature
Figure 7 • Transfer Characteristics
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Electrical Specifications
Figure 8 • Capacitance vs. Drain Source Voltage
Figure 9 • Gate Charge vs. Gate Source Voltage
Figure 10 • Body Diode Char, TJ = 25 °C
Figure 11 • 3rd Quadrant Char, TJ = 25 °C
Figure 12 • Body Diode Char, TJ = 175 °C
Figure 13 • 3rd Quadrant Char, TJ = 175 °C
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Electrical Specifications
Figure 14 • Switching Energy vs. Current
Figure 15 • Turn-on Energy vs. Rg
Figure 16 • Operating Frequency vs. Drain Current Figure 17 • Turn-off Energy vs. Rg
3.7
Typical SiC Diode Performance Curves
This section shows the typical performance curves of the MSCSM70VM10C4AG SiC diodes (CR2 and CR3).
Figure 18 • Maximum Thermal Impedance
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Electrical Specifications
Figure 19 • Forward Characteristics
3.8
Figure 20 • Capacitance vs. Reverse Voltage
Typical CR1 Diode Curves
This section shows the typical performance curves of the MSCSM70VM10C4AG CR1 diode.
Figure 21 • Maximum Thermal Impedance
Figure 22 • Forward Characteristics
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Package Specification
4
Package Specification
This section shows the package outline of the MSCSM70VM10C4AG device. All dimensions are in millimeters.
Figure 23 • Package Outline
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com.
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