MSCSM70VR1M10CTPAG

MSCSM70VR1M10CTPAG Triple Vienna Rectifier SiC MOSFET Power Module : Product Overview : The MSCSM70VR1M10CTPAG device is a triple Vienna rectifier 700V, 238A silicon carbide (SiC) power module. Note: All ratings at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 1 MSCSM70VR1M10CTPAG Features The following are the key features of MSCSM70VR1M10CTPAG device: • SiC Power MOSFET – Low RDS(on) – High temperature performance • SiC Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • • • • Very low stray inductance Internal thermistor for temperature monitoring Kelvin source for easy drive Aluminum Nitride (AlN) substrate for improved thermal performance Benefits The following are the benefits of MSCSM70VR1M10CTPAG device: • • • • • • • Outstanding performance at high frequency operation High-power and high-efficiency rectifiers and converters Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant Applications The following are the applications of MSCSM70VR1M10CTPAG device: • • • Power factor correction Switched mode power supplies Uninterruptible power supplies © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 2 MSCSM70VR1M10CTPAG Electrical Specifications 1. Electrical Specifications The following sections show the electrical specifications of the MSCSM70VR1M10CTPAG device. 1.1 SiC MOSFET Characteristics (Per SiC MOSFET) The following table lists the absolute maximum ratings (per SiC MOSFET) of the MSCSM70VR1M10CTPAG device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Maximum Ratings Unit VDSS Drain-Source voltage 700 V ID Continuous drain current TC = 25 °C 2381 A TC = 80 °C 1891 IDM Pulsed drain current 480 VGS Gate-Source voltage –10/23 V RDS(on) Drain-Source ON resistance 9.5 mΩ PD Power dissipation 674 W TC = 25 °C Note:  1. Specification of SiC MOSFET device but output current must be limited due to size of power connectors. The following table lists the electrical characteristics (per SiC MOSFET) of the MSCSM70VR1M10CTPAG device. Table 1-2. Electrical Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current VGS = 0V; VDS = 700V — — 200 µA RDS(on) Drain-Source on resistance VGS = 20V TJ = 25 °C — 7.5 9.5 mΩ ID = 80A TJ = 175 °C — 9.5 — VGS(th) Gate threshold voltage VGS = VDS; ID = 8 mA 1.9 2.4 — V IGSS Gate-Source leakage current VGS = 20V; VDS = 0V — — 200 nA © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 3 MSCSM70VR1M10CTPAG Electrical Specifications The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM70VR1M10CTPAG device. Table 1-3. Dynamic Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0V — 9000 — pF Coss Output capacitance VDS = 700V — 1020 — Crss Reverse transfer capacitance f = 1 MHz — 58 — Qg Total gate charge VGS = –5V/20V — 430 — Qgs Gate-source charge VBus = 470V — 116 — Qgd Gate-drain charge ID = 80A — 70 — Td(on) Turn-on delay time VGS = –5V/20V — 40 — Tr Rise time VBus = 400V — 35 — Turn-off delay time ID = 160A — 50 — Fall time RGON = 13.5Ω 20 — Td(off) Tf TJ = 150 °C nC ns RGOFF = 2.4Ω Eon Turn-on energy VGS = –5V/20V TJ = 150 °C — 1090 — Eoff Turn-off energy VBus = 400V TJ = 150 °C — 372 — μJ ID = 160A RGON = 13.5Ω RGOFF = 2.4Ω RGint Internal gate resistance — 2.8 — Ω RthJC Junction-to-case thermal resistance — — 0.222 °C/W The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the MSCSM70VR1M10CTPAG device. Table 1-4. Body Diode Ratings and Characteristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VSD Diode forward voltage VGS = 0V; ISD = 80A — 3.4 — V VGS = –5V; ISD = 80A — 3.8 — trr Reverse recovery time ISD = 80A — 38 — ns Qrr Reverse recovery charge VGS = –5V — 636 — nC Irr Reverse recovery current VR = 400V — 29.6 — A diF/dt = 2000 A/µs © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 4 MSCSM70VR1M10CTPAG Electrical Specifications 1.2 SiC Diode Ratings and Characteristics (Per SiC Diode) The following table lists the SiC diode ratings and characteristics of the MSCSM70VR1M10CTPAG device. Table 1-5. SiC Diode Ratings and Characteristics Symbol Characteristic VRRM Peak repetitive reverse voltage IRM Reverse leakage current IF DC Forward current VF Diode forward voltage Test Conditions VR = 1200V IF = 100A Min. Typ. Max. Unit — — 1200 V TJ = 25 °C — 30 400 µA TJ = 175 °C — 500 — TC = 100 °C — 100 — A TJ = 25 °C — 1.5 1.8 V TJ = 175 °C — 2.1 — QC Total capacitive charge VR = 600V — 448 — nC C Total capacitance f = 1 MHz, VR = 400V — 492 — pF f = 1 MHz, VR = 800V — 364 — — — 0.304 RthJC Junction-to-case thermal resistance © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet °C/W DS00004710A-page 5 MSCSM70VR1M10CTPAG Electrical Specifications 1.3 Thermal and Package Characteristics The following table lists the thermal and package characteristics of the MSCSM70VR1M10CTPAG device. Table 1-6. Thermal and Package Characteristics Symbol Characteristic VISOL Min. Max. Unit RMS isolation voltage, any terminal to case t = 1 min, 50 Hz/60 Hz 4000 — V TJ Operating junction temperature range –40 175 °C TJOP Recommended junction temperature under switching conditions –40 TJmax–25 TSTG Storage case temperature –40 125 TC Operating case temperature –40 125 Torque Mounting torque 3 5 N.m Wt Package weight — 250 g To heatsink M6 The following table lists the temperature sensor NTC of the MSCSM70VR1M10CTPAG device. Table 1-7. Temperature Sensor NTC Symbol Characteristic Min. Typ. Max. Unit R25 Resistance at 25 °C — 50 — kΩ ΔR25/R25 — — 5 — % B25/85 T25 = 298.15K — 3952 — K ΔB/B — — 4 — % TC = 100 °C Note: See APT0406—Using NTC Temperature Sensor Integrated into Power Module for more information. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 6 MSCSM70VR1M10CTPAG Electrical Specifications Typical SiC MOSFET Performance Curve The following figures show the SiC MOSFET performance curves of the MSCSM70VR1M10CTPAG device. Figure 1-1. Maximum Thermal Impedance ZTHJC (°C/W) 0.1 1 0.01 0.001 2 3 4 5 6 7 Ri (°C/W) 0.005 0.057 0.013 0.052 0.009 0.056 0.030 taui (s) 0.004 0.003 0.008 0.029 0.026 0.009 0.055 0.01 0.1 1 tim e (s) Figure 1-2. Output Characteristics, TJ = 25 °C Figure 1-3. Output Characteristics, TJ = 175 °C 300 TJ=25°C 250 V GS =20V 200 V GS=18V 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IDS , Drain Source Current (A) IDS, Drain Source Current (A) 300 TJ=175°C 250 V GS=20V 200 V GS=18V 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V DS, Drain Source Voltage (V) V DS , Drain Source Voltage (V) Figure 1-4. Normalized RDS(on) vs. Temperature Figure 1-5. Transfer Characteristics 300 1.40 IDS, Drain Source Current (A) RDSon, Drain Source ON resistance 1.4 VGS=20V I D=80A 1.30 1.20 1.10 1.00 0.90 0.80 25 50 75 100 125 150 250 200 150 100 and its subsidiaries 50 TJ=25°C 0 175 2 T J, Junction Temperature (°C) © 2022 Microchip Technology Inc. TJ=175°C 4 6 8 10 12 V GS, Gate Source Voltage (V) Data Sheet DS00004710A-page 7 MSCSM70VR1M10CTPAG Electrical Specifications Figure 1-6. Switching Energy vs. Current Figure 1-7. Turn On Energy vs. Rg 1400 2200 VGS=-5/20V R GON=13.5Ω R GOFF =2.4Ω VBUS= 400V TJ = 150°C 1000 800 Eon 2000 Losses (μJ) Losses (μJ) 1200 600 Eof f 400 200 1800 Eon 1600 1400 VGS=-5/20V I D= 160A VBUS = 400V TJ = 150°C 1200 0 0 40 80 120 160 1000 200 10 Current (A) 100000 25 30 Figure 1-9. Gate Charge vs. Gate Source Voltage 20 Ciss 10000 1000 Coss 100 Crss 10 0 200 400 V GS, Gate to Source Voltage (V) C, Capacitance (pF) 20 Gate resistance (Ω) Figure 1-8. Capacitance vs. Drain Source Voltage TJ = 25°C I D = 80A VDS = 470V 15 10 5 0 -5 600 0 100 Figure 1-10. Body Diode Characteristics, TJ = 25 °C -5 0 -100 -150 VGS=-2V -200 -250 TJ=25°C -4 -3 -2 -1 0 TJ=25°C -50 VGS=0V -100 VGS=5V -150 VGS=18V -200 -250 VGS=20V V DS, Drain source voltage (V) V DS , Drain source voltage (V) and its subsidiaries 500 -300 -300 © 2022 Microchip Technology Inc. 400 0 IDS , Drain source current (A) -50 VGS=0V 300 Figure 1-11. 3rd Quadrant Characteristics, TJ = 25 °C -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 VGS=-5V 200 Gate Charge (nC) V DS, Drain source Voltage (V) IDS , Drain source current (A) 15 Data Sheet DS00004710A-page 8 MSCSM70VR1M10CTPAG Electrical Specifications Figure 1-12. Body Diode Characteristics, TJ = 175 °C Figure 1-13. 3rd Quadrant Characteristics, TJ = 175 °C -5 IDS , Drain source current (A) 0 VGS=-5V -50 VGS=0V -100 -150 VGS=-2V -200 -250 -4 -3 -2 -1 0 0 IDS , Drain source current (A) -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 TJ=175°C -50 -100 VGS=0V VGS=5V -150 -200 VGS=18V TJ=175°C -300 -300 V DS , Drain source voltage (V) V DS , Drain source voltage (V) Figure 1-14. Operating Frequency vs Drain Current Figure 1-15. Turn Off Energy vs. Rg 1200 500 VBUS=400V D=50% R GON=13.5Ω R GOFF =2.4Ω TJ=150°C TC=75°C 300 1000 Eof f Losses (μJ) 400 Frequency (kHz) -250 VGS=20V Hard switching 200 100 800 600 VGS=-5/20V I D= 160A VBUS = 400V TJ = 150°C 400 0 0 40 80 120 160 200 200 2 ID, Drain Current (A) © 2022 Microchip Technology Inc. and its subsidiaries 2.5 3 3.5 4 4.5 5 Gate resistance (Ω) Data Sheet DS00004710A-page 9 MSCSM70VR1M10CTPAG Electrical Specifications 1.5 Typical SiC Diode Performance Curve The following figures show the SiC diode performance curves of the MSCSM70VR1M10CTPAG device. Figure 1-16. Maximum Thermal Impedance Z THJC (°C/W) 1 0.1 1 0.01 0.001 0.01 2 3 4 5 6 7 Ri (°C/W) 0.007 0.085 0.019 0.072 0.012 0.072 0.037 taui (s) 0.003 0.003 0.007 0.024 0.027 0.007 0.049 0.1 1 tim e (s) Figure 1-17. Forward Characteristics Figure 1-18. Capacitance vs. Reverse Voltage 7 6 160 C, Capacitance (nF) IF Forw ard Current (A) 200 TJ=25°C 120 80 TJ=175°C 40 0 0 0.5 1 1.5 2 2.5 3 and its subsidiaries 4 3 2 1 0 3.5 0.1 V F Forw ard Voltage (V) © 2022 Microchip Technology Inc. 5 1 10 100 1000 V R Reverse Voltage Data Sheet DS00004710A-page 10 MSCSM70VR1M10CTPAG Package Specifications 2. Package Specifications The following section shows the package specification of the MSCSM70VR1M10CTPAG device. 2.1 Package Outline The following figure shows the package outline drawing of the MSCSM70VR1M10CTPAG device. The dimensions in the following figure are in millimeters. Figure 2-1. Package Outline Drawing Note: See 1902—Mounting Instructions for SP6-P (12 mm) Power Modules for more information. © 2022 Microchip Technology Inc. and its subsidiaries Data Sheet DS00004710A-page 11 MSCSM70VR1M10CTPAG Revision History 3. 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