1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
GENERAL DESCRIPTION
CASE OUTLINE
55-Q03
Common Source
The 1011GN-1200V is an internally matched, COMMON SOURCE, class AB,
GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 1200
Watts of pulsed RF output power at 32us, 2% duty cycle pulse format across
the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal
performance. It utilizes gold metallization and eutectic attach to provide highest
reliability and superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
Gate-Source Voltage (VGS)
2400W
150 V
-8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG)
-55 to +125 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Characteristics
Test Conditions
Min
Typ
Max
Units
10.5
15
W
PIN
Input Power
POUT=1200W, Freq=1030,1090 MHz
GP
Power Gain
POUT =1200W, Freq=1030,1090 MHz
D
Drain Efficiency
POUT =1200W, Freq=1030,1090 MHz
Dr
Droop
POUT =1200W, Freq=1030,1090 MHz
0.3
VSWR-T
Load Mismatch Tolerance
POUT =1200W, Freq= 1030MHz
3:1
ӨJC
Thermal Resistance
32us, 2% duty cycle
0.25
18.5
20
dB
75
%
dB
°C/W
Bias Condition: Vdd=+50V, Idq=150mA average current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERISTICS @ 25C
ID(OFF)
Drain leakage current
VGS = -8V, VD =150V
64
mA
IG(OFF)
Gate leakage current
VGS = -8V, VD = 0V
20
mA
Export Classification: EAR 99
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
TYPICAL BROAD BAND PERFORMACE DATA
1030 MHz
1090 MHz
PIN (W)
POUT (W)
IRL (dB)
Eff (%)
POUT (W)
IRL (dB)
Eff (%)
7.9
1045
-14
74
1220
-14
84
10.0
1200
-14
76
1330
-14
86
12.6
1330
-13
78
1360
-14
87
14.1
1390
-13
79
1350
-14
87
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
TYPICAL OVER TEMPERATURE PERFORMANCE
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
TRANSISTOR IMPEDANCE INFORMATION
Output Matching
Network
D
Input Matching
Network
G
S
ZLOAD
50 Ω
ZSOURCE
50 Ω
Note:
ZSOURCE is looking into the input circuit
ZLOAD is looking into the output circuit
Frequency
ZSOURCE
ZLOAD
1030 MHz
1.32-j0.37 Ω
0.86-j1.1 Ω
1060 MHz
1.38-j0.2 Ω
0.80-j0.94 Ω
1090 MHz
1.46-j0.08 Ω
0.74-j0.82 Ω
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
TEST CIRCUIT (inches)
Board Material: Roger Duroid 6006 @ H=25 mils, Er=6.15
DXF file available upon request
BILL OF MATERIALS
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com
1011GN-1200V
1200 Watts • 50 Volts • 32us, 2%
L-Band Avionics 1030/1090 MHz
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Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security,
aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and
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Revision History
Revision Level / Date
06/ March 20 2015
Para. Affected
-
Description
Initial Preliminary Release
Specifications are subject to change. For the most current information and sales contacts consult: www.MICROSEMI.com