RE46C143S16TF

R&E International A Subsidiary of Microchip Technology Inc. RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification General Description Features The RE46C143 is low power CMOS photoelectric type smoke detector IC. With minimal external components this circuit will provide all the required features for a photoelectric type smoke detector. • • • • • • • • • • The design incorporates a gain selectable photo amplifier for use with an infrared emitter/detector pair. An internal oscillator strobes power to the smoke detection circuitry for 100us every 8.1 seconds to keep standby current to a minimum. If smoke is sensed the detection rate is increased to verify an alarm condition. A high gain mode is available for push button chamber testing. Internal Power On Reset Low Quiescent Current Consumption Available in 16L PDIP, 16L N SOIC or 16L W SOIC ESD Protection on all Pins Interconnect up to 40 Detectors 75% Duty Cycle Horn Pattern Low Battery and Chamber Test Compatible with Motorola MC145010 UL Recognized per File S24036 Available in Standard Packaging or RoHS Compliant Pb Free Packaging. Pin Configuration A check for a low battery condition and chamber integrity is performed every 40 seconds when in standby. The alarm horn pattern utilizes a 75% duty cycle. An interconnect pin allows multiple detectors to be connected such that when one units alarms, all units will sound. C1 1 16 TEST C2 2 15 LBSET 3 14 VSS STROBE 4 13 ROSC VDD 5 12 COSC IRED 6 11 LED IO 7 10 FEED HORNB 8 9 DETECT The RE46C143 is recognized by Underwriters Laboratories for use in smoke detectors that comply with specification UL217 and UL268. HORNS ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Range Except FEED, IO FEED Input Voltage Range IO Input Voltage Range Input Current except FEED Operating Temperature Storage Temperature Maximum Junction Temperature SYMBOL VDD Vin Vinfd Vio1 Iin TA TSTG TJ VALUE 12.5 -.3 to Vdd +.3 -10 to +22 -.3 to +17 10 -25 to 75 -55 to 125 150 UNITS V V V V mA °C °C °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and operation at these conditions for extended periods may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when handling this product. Damage can occur when exposed to extremely high static electrical charge. © 2009 Microchip Technology Inc. DS22178B-page 1 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. DC Electrical Characteristics at TA = -25° to 75°C, VDD=9V, Typical Application (unless otherwise noted) Parameter Supply Voltage Supply Current Input Voltage High Input Voltage Low Input Leakage Low Input Leakage High Input Pull Down Current Output Leakage Current Low Output Leakage Current High Symbol Test Pin VDD 5 IDD1 5 IDD2 5 IDD3 5 IDD4 5 VIH1 Limits Typ Max Test Conditions Min 6 10 Operating Configured as in Figure 2, COSC=VSS Configured as in Figure 2, VDD=12V, COSC=VSS Configured as in Figure 2, STROBE on, IRED off, VDD=12V Configured as in Figure 2, STROBE on, IRED on, VDD=12V, Note 1 FEED VIH2 7 No Local Alarm, IO as an Input 3.2 V VIH4 16 TEST 8.5 V VIL1 10 FEED VIL2 7 No Local Alarm, IO as an Input VIL4 16 IIL1 1,2,3 IIL2 12,15 TEST VDD=12V, COSC=12V, STROBE active VDD=12V, Vin=VSS IIL3 16 ILFD 10 IIH1 1,2 IIH2 3,12,15 IHFD 10 FEED=22V 50 uA IPD1 16 Vin=VDD .25 10 uA IPDIO1 7 Vin=VDD 20 80 uA IPDIO2 7 Vin=17V, VDD=12 140 uA IOZL1 11,13 Output Off, Output=VSS -1 uA IOZH1 11,13 Output Off, Output=VDD 1 uA 6.2 Units 12 V 4 6 uA 5.5 8 uA 2 mA 3 mA 4.5 4.5 V 2.7 V 1.5 V 7 V -100 nA -100 nA VDD=12V, Vin=VSS -1 uA FEED=-10V VDD=12V, Vin=VDD, STROBE active VDD=12V, Vin=VDD -50 uA 100 nA 100 nA Note 1: Does not include Q3 emitter current. © 2009 Microchip Technology Inc. DS22178B-page 2 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. DC Electrical Characteristics (continued) at TA= -25° to 75°, VDD=9V, Typical Application (unless otherwise noted) Parameter Output Voltage Low Symbol Test Pin VOL1 8,9 Iol=16mA, VDD=6.5V VOL2 13 Iol=5mA, VDD=6.5V Test Conditions Min 1 .5 VOL3 11 Iol=10mA, VDD=6.5V Output Voltage High VOh1 8,9 Ioh=-16mA, VDD=6.5V 5.5 Output Current IIOH1 7 -4 IIODMP 7 VLB 5 VSTOF 4 VSTON 4 VIREDOF 6 VIREDON 6 VCM1 1,2,3 Alarm, Vio=Vdd-2V or Vio=0V At Conclusion of Local Alarm or Test, Vio=1V R14=100K, R15=47K, ILed=10mA STROBE off, VDD=12V, Iout=-1uA STROBE on, VDD=9V Iout= 100uA to 500uA IRED off, VDD=12V, Iout=1uA IRED on, VDD=9V Iout=0 to -6mA, Ta=25C Local smoke, Push to Test or Chamber Test, Note 1 Vref - TCST 4 TCIRED 6 ΔVSTON ΔVIREDON Low Battery Alarm Voltage Output Voltage Common Mode Voltage Smoke Compare Reference Temperature Coefficient Line Regulation Internal Reference 4,5 VDD=6V to 12V, STROBE Output Voltage VDD=6V to 12V, IRED Output Voltage Active, VDD=6V to 12V 6,5 Active, VDD=6V to 12V Limits Typ Max V V -16 5 2.25 V V .6 6.9 VDD .1 VDD 5.3 Units mA mA 7.2 7.5 V V VDD 5 3.1 VDD 4.7 .1 V V 3.75 V .5 VDD-2 V VDD3.85 VDD3.15 V .01 %/ºC .3 %/ºC -50 dB -30 dB Note 1: Not production tested Typical values are for design information and are not guaranteed. Limits over the specified temperature range are not production tested and are based on characterization data. © 2009 Microchip Technology Inc. DS22178B-page 3 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. AC Electrical Characteristics at TA =-25° to 75°, VDD=9V, VSS=0V, Component Values from Figure 2 ; R9=100KΩ, R12=10MΩ, C5= 1.5nF(unless otherwise noted) Parameter Symbol Test Pin TPOSC 12 Oscillator Period LED and STROBE On Time Test Conditions Min Limits Typ Max No Alarm Condition, Note 2 9.4 10.5 11.5 mS Units TON1 11,4 Operating 9.4 10.5 11.5 mS TPLED1 11 Standby, No Alarm 38 43 47 S TPLED2 11 Local Alarm Condition .6 .67 .74 S TPLED4 11 Remote Alarm Only TPER1 4,6 TPER1A 4,6 TPER1B 4,6 TPER2 4,6 TPER3 4,6 Standby, No Alarm Standby, After 1 Valid Smoke Sample Standby, After 2 Consecutive Valid Smoke Samples In Local Alarm – (3 Consecutive Valid Smoke Samples) In Remote Alarm TPER4 4,6 TPER5 4,6 IRED On Time TON2 6 Horn On Time THON1 8,9 THON2 8,9 THOF1 8,9 THOF3 8,9 TIODMP 7 TIODLY1 7 TIOFILT 7 TIODLY2 7 LED Period STROBE and IRED Pulse Period Horn Off Time IO Charge Dump Duration IO Delay IO Filter Remote Alarm Delay Pushbutton Test Chamber Test or Low Battery Test, no Alarms Operating, Note 2 Operating, Alarm Condition, Note 1 Low Battery or Failed Chamber Test , No Alarm Operating, Alarm Condition, Note 1 Low Battery or Failed Chamber Test, No Alarm At Conclusion of Local Alarm or Test From Start of Local Alarm to IO Active IO pulse width guaranteed to be filtered. IO as Input, No Local Alarm No Local Alarm, From IO Active Horn Active LED IS NOT ON S 9.7 10.5 11.8 S 2.42 2.7 2.96 S 1.21 1.33 1.47 S 1.21 1.33 1.47 S 9.7 10.5 11.8 S 336 39 mS 47 S 94 104 115 uS 227 252 277 mS 9.5 10.5 11.5 mS 76 84 92 mS 39 43 47 S 1.46 S .91 0 .75 S 600 mS 1.65 S Note 1 – See timing diagram for Horn Temporal Pattern Note 2 - TPOSC and TON2 are 100% production tested. All other timing is guaranteed by functional testing. Typical values are for design information and are not guaranteed. Limits over the specified temperature range are not production tested and are based on characterization data. © 2009 Microchip Technology Inc. DS22178B-page 4 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. Functional Block Diagram Figure 1 © 2009 Microchip Technology Inc. DS22178B-page 5 RE46C143 CMOS Photoelectric Smoke Detector ASIC with Interconnect Product Specification R&E International A Subsidiary of Microchip Technology Inc. PIN DESCRIPTIONS PIN# PIN NAME 1 C1 The capacitor connected to this pin sets the photo amplifier gain (high) for the push-to-test and chamber sensitivity test. The size of this capacitor will depend on the chamber background reflections. A=1+(C1/10) where C1 is in pF. The gain should be