R&E International
A Subsidiary of Microchip Technology Inc.
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
General Description
Features
The RE46C143 is low power CMOS photoelectric type
smoke detector IC. With minimal external components
this circuit will provide all the required features for a
photoelectric type smoke detector.
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The design incorporates a gain selectable photo
amplifier for use with an infrared emitter/detector pair.
An internal oscillator strobes power to the smoke
detection circuitry for 100us every 8.1 seconds to keep
standby current to a minimum. If smoke is sensed the
detection rate is increased to verify an alarm condition.
A high gain mode is available for push button chamber
testing.
Internal Power On Reset
Low Quiescent Current Consumption
Available in 16L PDIP, 16L N SOIC or 16L W SOIC
ESD Protection on all Pins
Interconnect up to 40 Detectors
75% Duty Cycle Horn Pattern
Low Battery and Chamber Test
Compatible with Motorola MC145010
UL Recognized per File S24036
Available in Standard Packaging or RoHS
Compliant Pb Free Packaging.
Pin Configuration
A check for a low battery condition and chamber
integrity is performed every 40 seconds when in
standby. The alarm horn pattern utilizes a 75% duty
cycle.
An interconnect pin allows multiple detectors to be
connected such that when one units alarms, all units
will sound.
C1
1
16
TEST
C2
2
15
LBSET
3
14
VSS
STROBE
4
13
ROSC
VDD
5
12
COSC
IRED
6
11
LED
IO
7
10
FEED
HORNB
8
9
DETECT
The RE46C143 is recognized by Underwriters
Laboratories for use in smoke detectors that comply
with specification UL217 and UL268.
HORNS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
VDD
Vin
Vinfd
Vio1
Iin
TA
TSTG
TJ
VALUE
12.5
-.3 to Vdd +.3
-10 to +22
-.3 to +17
10
-25 to 75
-55 to 125
150
UNITS
V
V
V
V
mA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
© 2009 Microchip Technology Inc.
DS22178B-page 1
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
R&E International
A Subsidiary of Microchip Technology Inc.
DC Electrical Characteristics at TA = -25° to 75°C, VDD=9V, Typical Application (unless otherwise noted)
Parameter
Supply Voltage
Supply Current
Input Voltage High
Input Voltage Low
Input Leakage Low
Input Leakage High
Input Pull Down Current
Output Leakage Current
Low
Output Leakage Current
High
Symbol
Test
Pin
VDD
5
IDD1
5
IDD2
5
IDD3
5
IDD4
5
VIH1
Limits
Typ
Max
Test Conditions
Min
6
10
Operating
Configured as in Figure 2,
COSC=VSS
Configured as in Figure 2,
VDD=12V, COSC=VSS
Configured as in Figure 2,
STROBE on, IRED off, VDD=12V
Configured as in Figure 2,
STROBE on, IRED on, VDD=12V,
Note 1
FEED
VIH2
7
No Local Alarm, IO as an Input
3.2
V
VIH4
16
TEST
8.5
V
VIL1
10
FEED
VIL2
7
No Local Alarm, IO as an Input
VIL4
16
IIL1
1,2,3
IIL2
12,15
TEST
VDD=12V, COSC=12V, STROBE
active
VDD=12V, Vin=VSS
IIL3
16
ILFD
10
IIH1
1,2
IIH2
3,12,15
IHFD
10
FEED=22V
50
uA
IPD1
16
Vin=VDD
.25
10
uA
IPDIO1
7
Vin=VDD
20
80
uA
IPDIO2
7
Vin=17V, VDD=12
140
uA
IOZL1
11,13
Output Off, Output=VSS
-1
uA
IOZH1
11,13
Output Off, Output=VDD
1
uA
6.2
Units
12
V
4
6
uA
5.5
8
uA
2
mA
3
mA
4.5
4.5
V
2.7
V
1.5
V
7
V
-100
nA
-100
nA
VDD=12V, Vin=VSS
-1
uA
FEED=-10V
VDD=12V, Vin=VDD, STROBE
active
VDD=12V, Vin=VDD
-50
uA
100
nA
100
nA
Note 1: Does not include Q3 emitter current.
© 2009 Microchip Technology Inc.
DS22178B-page 2
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
R&E International
A Subsidiary of Microchip Technology Inc.
DC Electrical Characteristics (continued) at TA= -25° to 75°, VDD=9V, Typical Application (unless
otherwise noted)
Parameter
Output Voltage Low
Symbol
Test
Pin
VOL1
8,9
Iol=16mA, VDD=6.5V
VOL2
13
Iol=5mA, VDD=6.5V
Test Conditions
Min
1
.5
VOL3
11
Iol=10mA, VDD=6.5V
Output Voltage High
VOh1
8,9
Ioh=-16mA, VDD=6.5V
5.5
Output Current
IIOH1
7
-4
IIODMP
7
VLB
5
VSTOF
4
VSTON
4
VIREDOF
6
VIREDON
6
VCM1
1,2,3
Alarm, Vio=Vdd-2V or Vio=0V
At Conclusion of Local Alarm or
Test, Vio=1V
R14=100K, R15=47K, ILed=10mA
STROBE off, VDD=12V,
Iout=-1uA
STROBE on, VDD=9V
Iout= 100uA to 500uA
IRED off, VDD=12V, Iout=1uA
IRED on, VDD=9V
Iout=0 to -6mA, Ta=25C
Local smoke, Push to Test or
Chamber Test, Note 1
Vref
-
TCST
4
TCIRED
6
ΔVSTON
ΔVIREDON
Low Battery Alarm Voltage
Output Voltage
Common Mode Voltage
Smoke Compare
Reference
Temperature Coefficient
Line Regulation
Internal Reference
4,5
VDD=6V to 12V, STROBE Output
Voltage
VDD=6V to 12V, IRED Output
Voltage
Active, VDD=6V to 12V
6,5
Active, VDD=6V to 12V
Limits
Typ
Max
V
V
-16
5
2.25
V
V
.6
6.9
VDD .1
VDD 5.3
Units
mA
mA
7.2
7.5
V
V
VDD 5
3.1
VDD 4.7
.1
V
V
3.75
V
.5
VDD-2
V
VDD3.85
VDD3.15
V
.01
%/ºC
.3
%/ºC
-50
dB
-30
dB
Note 1: Not production tested
Typical values are for design information and are not guaranteed.
Limits over the specified temperature range are not production tested and are based on characterization data.
© 2009 Microchip Technology Inc.
DS22178B-page 3
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
R&E International
A Subsidiary of Microchip Technology Inc.
AC Electrical Characteristics at TA =-25° to 75°, VDD=9V, VSS=0V, Component Values from Figure 2 ;
R9=100KΩ, R12=10MΩ, C5= 1.5nF(unless otherwise noted)
Parameter
Symbol
Test
Pin
TPOSC
12
Oscillator Period
LED and STROBE On Time
Test Conditions
Min
Limits
Typ
Max
No Alarm Condition, Note 2
9.4
10.5
11.5
mS
Units
TON1
11,4
Operating
9.4
10.5
11.5
mS
TPLED1
11
Standby, No Alarm
38
43
47
S
TPLED2
11
Local Alarm Condition
.6
.67
.74
S
TPLED4
11
Remote Alarm Only
TPER1
4,6
TPER1A
4,6
TPER1B
4,6
TPER2
4,6
TPER3
4,6
Standby, No Alarm
Standby, After 1 Valid Smoke
Sample
Standby, After 2 Consecutive Valid
Smoke Samples
In Local Alarm – (3 Consecutive
Valid Smoke Samples)
In Remote Alarm
TPER4
4,6
TPER5
4,6
IRED On Time
TON2
6
Horn On Time
THON1
8,9
THON2
8,9
THOF1
8,9
THOF3
8,9
TIODMP
7
TIODLY1
7
TIOFILT
7
TIODLY2
7
LED Period
STROBE and IRED Pulse
Period
Horn Off Time
IO Charge Dump Duration
IO Delay
IO Filter
Remote Alarm Delay
Pushbutton Test
Chamber Test or Low Battery
Test, no Alarms
Operating, Note 2
Operating, Alarm Condition, Note 1
Low Battery or Failed Chamber
Test , No Alarm
Operating, Alarm Condition, Note 1
Low Battery or Failed Chamber
Test, No Alarm
At Conclusion of Local Alarm or
Test
From Start of Local Alarm to IO
Active
IO pulse width guaranteed to be
filtered. IO as Input, No Local
Alarm
No Local Alarm, From IO Active
Horn Active
LED IS NOT ON
S
9.7
10.5
11.8
S
2.42
2.7
2.96
S
1.21
1.33
1.47
S
1.21
1.33
1.47
S
9.7
10.5
11.8
S
336
39
mS
47
S
94
104
115
uS
227
252
277
mS
9.5
10.5
11.5
mS
76
84
92
mS
39
43
47
S
1.46
S
.91
0
.75
S
600
mS
1.65
S
Note 1 – See timing diagram for Horn Temporal Pattern
Note 2 - TPOSC and TON2 are 100% production tested. All other timing is guaranteed by functional testing.
Typical values are for design information and are not guaranteed.
Limits over the specified temperature range are not production tested and are based on characterization data.
© 2009 Microchip Technology Inc.
DS22178B-page 4
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
R&E International
A Subsidiary of Microchip Technology Inc.
Functional Block Diagram
Figure 1
© 2009 Microchip Technology Inc.
DS22178B-page 5
RE46C143
CMOS Photoelectric Smoke Detector ASIC with Interconnect
Product Specification
R&E International
A Subsidiary of Microchip Technology Inc.
PIN DESCRIPTIONS
PIN#
PIN NAME
1
C1
The capacitor connected to this pin sets the photo amplifier gain (high) for the
push-to-test and chamber sensitivity test. The size of this capacitor will depend
on the chamber background reflections. A=1+(C1/10) where C1 is in pF. The
gain should be
