RE46C800
Detector Power Management System
with Horn Driver and CO Op Amp
Features
Description
•
•
•
•
•
•
The RE46C800 provides all of the analog, interface, and
power management functions for a microcontroller
based CO or toxic gas detector. The RE46C800 can
also be used in any smoke detector application requiring
the power management, horn driver and interconnect
functions provided by this CMOS ASIC. It is intended for
use in both 3V and 9V battery or battery-backed applications. It features a boost regulator and horn driver circuit suitable for driving a piezoelectric horn, a 3.3V
regulator for microcontroller voltage regulation, an LED
driver, an operational amplifier and an IO for
communication with interconnected units.
Low Quiescent Current
Operation from 2V or 12V
9.8V Boost Regulator
Horn Driver
LED Driver
3.3V Regulated Voltage for Microcontroller
Operation
• Internal Operational Amplifiers:
- ±1 mV Input Offset Voltage
- Rail-to-Rail Input and Output
- 10 kHz Gain Bandwidth Product
- Unity Gain Stable
• Bidirectional Alarm Interconnect
Package Types
RE46C800
SSOP
Applications
• CO Detector
• Toxic Gas Detector
• Heat Detector
INP
1
20
HRNEN
INN
VREF
2
19
HB
3
18
HS
OPOUT
9VDET
VDD
ACDET
4
5
17
16
FEED
VSS
6
7
15
LEDEN
8
13
12
LX
LEDPWR
VBST
IO1
IO2
2013 - 2019 Microchip Technology Inc.
9
10
14
11
VREG
IODIR
DS20005172D-page 1
RE46C800
Functional Block Diagram
VDDS
9VDET (5)
LX (15)
HRNEN (20)
BOOST
DISABLE
PWM
CONTROL
VBST
HB (19)
LEVEL
SHIFTER
I_LIMIT
ACDET (7)
HS (18)
VREG
VDD (6)
SUPPLY
SELECT
FEED (17)
VDDS
ERROR
AMPLIFIER
VBST (13)
VDDS
REFERENCE
VOLTAGE
VREG (12)
VREG
OV
Protection
INP (1)
VREF
GENERATOR
VREF (3)
INN (2)
OPOUT (4)
LEDEN (8)
VBST
LEDPWR (14)
IO1 (9)
IODIR (11)
IO2 (10)
DS20005172D-page 2
INTERCONNECT
VSS (16)
2013 - 2019 Microchip Technology Inc.
RE46C800
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings†
VDD............................................................................................................................................................... -0.3V to 5.5V
ESD HBM................................................................................................................................................................1500V
ESD MM....................................................................................................................................................................150V
VBST, LX ........................................................................................................................................................ -0.3V to 13V
Input Voltage Range Except ACDET, 9VDET, FEED, IO1 ..................................................... VIN1 = – .3V to VREG + .3V
ACDET, 9VDET Input Voltage Range .....................................................................................VIN2 = – .3V to VBST + .3V
FEED Input Voltage Range ........................................................................................................... VINFD = -10V to + 22V
IO1 Input Voltage Range....................................................................................................................VINIO1 = -.3 to +15V
Input Current except FEED ............................................................................................................................. IIN = 10 mA
Operating Temperature ..................................................................................................................... TA = -10C to +60C
Storage Temperature ..................................................................................................................TSTG = -55C to +125C
Maximum Junction Temperature ....................................................................................................................TJ = +15C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC ELECTRICAL CHARACTERISTICS – RE46C800
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Supply Voltage
Standby Supply Current
Symbol
Test
Pin
Min.
Typ.
Max.
Units
VDD
6
2
—
5
V
Operating
VBST
13
6
—
12
V
Operating, 9V operation,
9VDET or ACDET high
IDDSTBY1
—
13.6
—
µA
Inputs low; No loads, boost
regulator running (Note 4)
IDDSTBY2
—
5.8
9.3
µA
Inputs low; No loads, boost
regulator disabled, 9V operation, VBST = 9V, 9VDET high
Conditions
Quiescent Supply
Current
IDDQ
6
—
6.8
10.3
µA
Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Quiescent IVO
IVOQ
13
—
3.6
5.2
µA
Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Note 1:
2:
3:
4:
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 3
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Input Leakage Low
Input Leakage High
Symbol
Test
Pin
Min.
Typ.
Max.
Units
Conditions
1, 5, 7,
8, 10,
11, 20
—
—
-100
nA
INP, 9VDET, ACDET, LEDEN,
IO2, IODIR, HRNEN Inputs
VIN = VSS
IILOP
2
—
—
-200
pA
INN input, VIN = VSS
IILF
17
—
-15
-50
µA
FEED = -10V, VBST = 10V
IIH1
1, 8,
10, 11,
20
—
—
100
nA
INP, LEDEN, IO2, IODIR,
HRNEN Inputs VIN = VREG
IIH2
5, 7
—
—
100
nA
9VDET, ACDET Inputs,
VIN = VBST, VBST = 10V.
IIHOP
2
—
—
200
pA
INN input, VIN = VREG
IIL
IIHF
17
—
20
50
µA
FEED = +22V; VBST = 10V
Output Off Leakage
High
IIHOZ
14, 15
—
—
1
µA
LEDEN = VSS, LEDPWR,
LX = VBST = 10V
Input Voltage Low
VIL1
8, 10,
11, 20
—
—
1
V
LEDEN, IO2, IODIR, HRNEN
Inputs
VIL2
7
—
—
7
V
ACDET Input, VBST = 10V
VIL3
5
—
—
4
V
9VDET Input, VBST = 10V
VILF
17
—
—
3
V
FEED Input; VBST = 10V
VILIO1
9
—
—
0.8
V
Falling edge of IO1 input,
IODIR = VSS
VIH1
8, 10,
11, 20
VREG -.7
—
—
V
LEDEN, IO2, IODIR, HRNEN
Inputs
Input Voltage High
Output Voltage Low
Note 1:
2:
3:
4:
VIH2
7
8.2
—
—
V
ACDET Input, VBST = 10V
VIH3
5
6
—
—
V
9VDET Input, VBST = 10V
VIHF
17
7
—
—
V
FEED Input; VBST = 10V
VIHIO1
9
2
—
—
V
Rising edge of IO1 input,
IODIR = VSS
VOL1
18, 19
—
—
0.5
V
HS or HB; IOUT = 16 mA;
VDD = 3V; VBST = 10V,
HRNEN = VSS
VOL2
14
—
—
0.5
V
LEDPWR; IOUT = 10 mA;
VBST = 10V
VOLIO2
10
—
—
0.5
V
IO2 output, IOUT = 100 µA,
IODIR = VSS
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
DS20005172D-page 4
2013 - 2019 Microchip Technology Inc.
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Symbol
Test
Pin
Min.
Typ.
Max.
Units
VOH1
18, 19
9.5
—
—
V
HS or HB; IOUT = -16 mA;
VBST = 10V; HRNEN = VREG
VOHIO1
9
3
—
—
V
IO1, IOUT = -4 mA,
IODIR = VIH1, IO2 = VIH1
VOHIO2
10
VREG -.5
—
—
V
IO2, IOUT = -100 µA,
IODIR = VSS, IO1 = VIHIO1
Reference Voltage
VREF
3
—
300
—
mV
VBST Output Voltage
VVO1
13
9
9.8
10.6
V
VDD = 3V; HRNEN = VREG;
IOUT = 10 mA
VVO2
13
3.6
4
4.4
V
VDD = 3V; HRNEN = VSS;
IOUT=10 mA
VEFF1
—
85
—
%
ILOAD=10 mA; VDD =3V;
HRNEN = VSS
VEFF2
—
75
—
%
ILOAD = 100 µA; VDD = 3V;
HRNEN = VSS
IOUT < 20 mA
Parameter
Output Voltage High
VBST Efficiency
VREG Voltage
VREG Load Regulation
Brown-out Threshold
VREG
12
3.2
3.3
3.4
V
VREGLD
12
—
30
50
mV
Conditions
IOUT = 0 to 20 mA;
HRNEN = VREG
VOBVT
13
3.2
3.6
4
V
VOBVTM
13
100
400
—
mV
VVO2 - VOBVT
Brown-out Pull Down
IBT
12
20
40
—
mA
VBST = 3.0V; VREG = 2.0V
VREG Over Voltage
Clamp
VCL
12
3.75
4
4.25
V
IO1 Output Current
IO1IH1
9
25
—
60
µA
VBST-to-Brown-out
Margin
Falling edge of VBST
IODIR = VSS, IO1 = 1V
IO1IH2
9
—
—
150
µA
IODIR = VSS, IO1 = 15V
IO1IOH1
9
-4
-5
—
mA
IODIR, IO2 = VIH1, IO1 = 3V
IO1IOH2
9
—
-5
-16
mA
IODIR, IO2 = VIH1, IO1 = VSS
IO1IOL1
9
—
10
—
mA
IO Dump Current,
IODIR = VIH1, IO2 = VSS,
IO1 = 1V
VHYSTIO1
9
—
150
—
mV
IODIR = VSS
Input Offset Voltage
VOS
4
-1
—
1
mV
VCM = 0.3V
Common Mode Input
Range
VCMR
1, 2
VSS
—
VREG
V
IO1 Hysteresis
Op Amp
Note 1:
2:
3:
4:
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 5
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Common Mode
Rejection Ratio
DC Open-Loop Gain
(large signal)
Maximum Output
Voltage Swing
Output Short Circuit
Current
Note 1:
2:
3:
4:
Symbol
Test
Pin
Min.
Typ.
Max.
Units
CMRR
1, 2, 4
—
80
—
dB
VREG = 3.3V, VCM = -0.3V to
3.3V
AOL
4
—
115
—
dB
RL = 50 kΩ, VOUT = 0.3V to
VREG - 0.3V
VOL, VOH
4
VSS +10
—
VREG -10
mV
RL = 50 kΩ, 0.5V input
overdrive
ISC
4
—
20
—
mA
VREG = 3.3V
Conditions
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
DS20005172D-page 6
2013 - 2019 Microchip Technology Inc.
RE46C800
AC ELECTRICAL CHARACTERISTICS
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CVBST = 10 µF.
Parameter
Symbol
Test Pin
Min.
Typ.
Max.
Units
4
—
10
—
kHz
Conditions
OP Amp AC Response
Gain Bandwidth
Product
GBWP
Slew Rate
SR
4
—
3
—
V/ms
Phase margin
PM
4
—
65
—
°
Input Voltage
Noise
Eni
1, 2
—
5
—
Input Voltage
Noise Density
eni
1, 2
—
170
—
nV/
√Hz
f = 1 kHz
Input Current
Noise Density
ini
1, 2
—
0.6
—
fA/
√Hz
f = 1 kHz
G = +1V/V
Op Amp Noise
Note 1:
2:
3:
µVP-P f = 0.1 Hz to 10 kHz
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = 3V, VSS= 0V
Parameter
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
TA
-10
—
60
°C
TSTG
-55
—
125
°C
JA
—
87.3
—
°C/W
Thermal Package Resistances
Thermal Resistance, 20L-SSOP
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 7
RE46C800
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
RE46C800
SSOP
Symbol
Description
1
INP
Noninverting input of the op amp.
2
INN
Inverting input of the op amp.
3
VREF
Voltage reference for CO biasing and detection circuitry.
4
OPOUT
Output of the op amp.
5
9VDET
Logic input used to disable the boost regulator.
6
VDD
7
ACDET
AC power detect pin.
8
LEDEN
Logic input used to enable the LED driver. Input is designed to interface with
circuitry supplied by VREG, so input voltage levels will scale with the VREG
voltage.
9
IO1
Logic bidirectional pin used for connection to remote units. This pin has an
internal pull-down device. If used as an output, high level is VVO1.
10
IO2
Bidirectional pin used to send and receive IO1 interconnect signal status.
Low-voltage supply input.
11
IODIR
Logic input used to select IO direction.
12
VREG
Regulated output voltage. Nominal output is 3.3V.
13
VBST
Boost regulator output, typically output voltage is 4V or 9.8V. Also used as
the high-voltage supply input.
14
LEDPWR
15
LX
16
VSS
17
FEED
Usually connected to the feedback electrode of the piezoelectric horn
through a current limiting resistor. If not used, this pin must be connected to
VSS.
18
HS
HS is a complementary output to HB and connects to the ceramic electrode
(S) of the piezoelectric transducer.
19
HB
This pin is connected to the metal electrode (B) of a piezoelectric transducer.
20
HRNEN
DS20005172D-page 8
Open drain NMOS output used to drive a visible LED.
Open drain NMOS output used to drive the boost regulator inductor. The
inductor should be connected from this pin to the positive supply through a
low resistance path.
Connect to the negative supply voltage.
Logic input for horn enable designed to interface with circuitry supplied by
VREG. Input voltage levels will scale with the VREG voltage.
2013 - 2019 Microchip Technology Inc.
RE46C800
3.0
DEVICE DESCRIPTION
Table 3-1 shows the truth table for the power
management system.
3.1
Introduction
TABLE 3-1:
The RE46C800 provides the necessary analog
functions to build a microcontroller-based CO or toxic
gas detector. This includes an op amp and voltage
reference for the electrochemical sensor, a voltage
regulator for the microcontroller, an LED driver, a horn
driver, a detector interconnect function, a boost regulator for 3V operation, and a power management system
that allows operation from 3V, 9V or AC derived power.
The power management system provides the capability
for AC power with battery backup. The RE46C800
provides a simple means for the microcontroller to
control the operation of the CO detector and provide
the necessary signaling functions during an alarm
condition.
3.2
Power Management System
The power management system allows the RE46C800
to be powered from a 3V or 9V battery or AC power. AC
power is supplied as a DC voltage derived from an AC
power supply. This DC voltage is diode connected to
the VBST pin of the RE46C800. AC supplied power and
a 9V battery can both be diode connected to the VBST
pin.
For low-voltage systems the battery is connected to the
VDD pin. When only a low-voltage battery is available,
the internal circuitry is powered from VDD. When a 9V
battery or AC power is available, the internal circuitry is
powered from VREG, which is a regulated 3.3V. The
selection of the power source for the internal circuitry is
controlled with the ACDET pin when the 9VDET pin is
low.
In low-voltage systems that are also AC powered, the
boost regulator will turn on if voltage of the AC supplied
power drops below the specified boost regulator
voltage. This can cause the low-voltage battery to
discharge more rapidly than expected.
The 9VDET pin will disable the boost regulator if
9VDET is high. For a low-voltage system, the 9VDET
pin should be connected to VSS which will enable the
boost regulator.
2013 - 2019 Microchip Technology Inc.
9VDET ACDET
POWER MANAGEMENT
SYSTEM
Internal
Supply
Boost Regulator
0
0
VDD
Enabled
0
1
VREG
Enabled
1
0
VREG
Disabled
1
1
VREG
Disabled
3.3
Boost Regulator
The boost regulator only operates in low-voltage
applications. The boost regulator is a fixed off time
boost regulator with peak current limiting. In low-boost
operation the peak current is nominally 0.6A. In highboost operation the peak current is nominally 1.2A. The
boost regulator normally operates in Low-Boost mode,
which provides a nominal 4V output voltage on the
VBST pin. In High-Boost mode, the boost regulator
provides a nominal 9.8V on the VBST pin. The boost
regulator can be placed in High-Boost mode with
HORNEN, LEDEN, or IODIR and IO2 both asserted
high.
The brown-out threshold voltage is the VBST voltage at
which the voltage regulator and the horn will be
disabled. When the VBST voltage falls below the brownout threshold voltage of 3.6V, VREG will be disabled and
pulled to VSS with a nominal 40 mA current. When the
boost voltage rises above the brown-out threshold
voltage, VREG is enabled.
3.4
Voltage Regulator
The voltage regulator provides a nominal 3.3V output
at the VREG pin and is intended to power a
microcontroller. In normal operation, the regulator will
source current up to 20 mA, but the current sinking
capability is typically under 1 µA. The voltage regulator
is powered from the VBST pin. In low-voltage
applications the regulator is powered by the boost
regulator and the regulator load current is part of the
boost regulator load current. An overvoltage clamp is
intended to limit the voltage at VREG if it is pulled up by
an external source to greater than 4V. When the boost
regulator experiences a brown-out condition, the
voltage regulator will be disabled and the VREG output
will be pulled to VSS.
DS20005172D-page 9
RE46C800
3.5
LED Driver
3.7
The LED drive circuit provides power to an LED, which
can be used as a visual indicator by the system. The
LED drive circuit can also be used as part of a battery
check function in battery-powered applications. When
LEDEN is asserted high the LED will load the VBST
output and the microcontroller can monitor the battery
operation under load. In low-voltage systems the boost
regulator will be placed into high-boost operation when
LEDEN is asserted high. The load current is set by the
resistor in series with the LED.
3.6
CO Sensor Circuit
The RE46C800 provides a low offset op amp and
reference voltage, VREF, for a two terminal
electrochemical CO or toxic gas sensor. The unity gain
stable op amp provides rail-to-rail inputs and output.
The op amp output is monitored by the microcontroller
to determine the CO concentration. This uncommitted
op amp can be used for other purposes such as
temperature sensing.
Interconnect Operation
The IO circuitry provides the means for the CO detector
to be connected to other CO detectors or smoke
alarms. Table 3-2 below provides the truth table for the
interconnect circuit operation. IO1 is a bidirectional pin
that connects to other CO detectors or smoke alarms.
IO2 is a bidirectional pin that connects to the
microcontroller. IODIR connects to the microcontroller
and determines when IO1 and IO2 act as an input or
output. When IO1 is used as an output asserting a logic
high, the IO1 output acts as current source that is
biased from VBST. In low-voltage applications where
the boost regulator is enabled, the boost regulator will
operate in High-Boost mode. When IO1 is used as an
output asserting a logic low, the IO1 output acts as
current sink. IO2 logic levels are referenced to VREG.
TABLE 3-2:
IODIR
1
INTERCONNECT LOGIC
TRUTH TABLE
IO2
IO1
Input
Output
Input
Output
0
—
—
0
1
1
—
—
1
0
—
0
0
—
0
—
1
1
—
DS20005172D-page 10
2013 - 2019 Microchip Technology Inc.
RE46C800
4.0
APPLICATION NOTES
4.1
Boost Regulator
The boost regulator in High-Boost mode (nominal
VBST = 9.8V) can draw current pulses of greater than
1A and is, therefore, very sensitive to series resistance.
Critical components of this resistance are: the inductor
DC resistance, the internal resistance of the battery
and the resistance in the connections from the inductor
to the battery, from the inductor to the LX pin, from the
inductor through the boost capacitor, and from the VSS
pin to the battery. In order to function properly under full
load at VDD = 2V, the total of the inductor and interconnect resistances should not exceed 0.3Ω. The internal
battery resistance should be no more than 0.5Ω and a
low ESR capacitor of 10 µF or more should be
connected in parallel with the battery to average the
current draw over the boost regulator switching cycle.
The Schottky diode and inductor should be specified
with a maximum operating current of 1.5A or higher.
The boost capacitor should have a low ESR.
4.2
Typical Applications
A few typical applications using the RE46C800 are
listed below:
AC POWER
Line
Line
Neutral
D1
10-12V
DC
Neutral
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 MΩ
1MΩ
R1
1 µF
C1
Counter
VBAT
100
1 MΩ
R2
3V
10 µF
C2
1 µF
C3
100 KΩ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
220KΩ
R3
1 nF
C4
4 OPOUT
FEED 17
R6
5 9VDET
VSS 16
470
6
LX 15
VDD
7 ACDET
LEDPWR 14
8 LEDEN
13
9
Interface with
Interconnected Units
VREF
R5
10
IO1
IO2
VBST
VREG
IODIR
VBAT
L1
3.3V
12
11
LED
10 µH
D2
IO1 Å IO2
10 µF
C5
IO2 Å IO1
10 µF
C6
If AC then VREG supplies chip VDD through an internal switch
If no AC then VDD is supplied through the external VDD pin
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-1:
Typical Application: AC with 3V Battery Backup.
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 11
RE46C800
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 MΩ
1 MΩ
R1
1 µF
C1
Counter
100 Ω
VBAT
R2
10 µF
C2
3V
1 µF
C3
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
1 nF
C4
4 OPOUT
FEED 17
R6
5 9VDET
VSS 16
470
6 VDD
LX 15
7 ACDET
LEDPWR 14
8 LEDEN
13
9
10
Interface with
Interconnected Units
VREF
R5
220 KΩ
R3
VBST
IO1
VREG
IO2
IODIR
VBAT
L1
3.3V
12
11
LED
10 µH
D2
IO1 Å IO2
10 µF
C6
10 µF
C5
IO2 Å IO1
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-2:
Typical Application: 3V Battery Operation.
AC POWER
Line
Line
Neutral
D1
10-12V
Neutral
DC
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 MΩ
1 µF
C1
1 MΩ
R1
Counter
VBAT
D3
1 MΩ
9V
10 µF
C2
Interface with
Interconnected Units
100 KΩ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
VREF
4 OPOUT
FEED 17
5 9VDET
VSS 16
6
LX 15
VDD
7 ACDET
LEDPWR 14
8 LEDEN
VBST 13
9
IO1
VREG 12
10
IO2
IODIR 11
R5
220KΩ
R3
1 nF
C4
R6
470 KΩ
LED
3.3V
IO1 Å IO2
10 µF
C5
IO2 Å IO1
10 µF
C6
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-3:
DS20005172D-page 12
Typical Application: AC with 9V Battery Backup.
2013 - 2019 Microchip Technology Inc.
RE46C800
RE46C800
Working
1.5 MΩ
Microcontroller Interface
CO
Sensor
1 MΩ
R1
1 µF
C1
Counter
VBAT
10 µF
C2
9V
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
1 nF
C4
4 OPOUT
FEED 17
R6
5 9VDET
VSS 16
470
6
LX 15
VDD
7 ACDET
LEDPWR 14
8 LEDEN
13
9
10
Interface with
Interconnected Units
VREF
R5
220KΩ
R3
VBST
IO1
VREG
IO2
IODIR
LED
3.3V
12
11
IO1 Å IO2
10 µF
C5
10 µF
C6
IO2 Å IO1
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-4:
Typical Application: 9V Battery Operation.
AC POWER
Line
Line
Neutral
D1
10-12V
Neutral
DC
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 MΩ
1 µF
C1
1 MΩ
R1
Counter
1 MΩ
100 KΩ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3 VREF
HS 18
4 OPOUT
FEED 17
5 9VDET
VSS 16
6 VDD
LX 15
7 ACDET
LEDPWR 14
8 LEDEN
13
9
10
Interface with
Interconnected Units
VBST
IO1
VREG
IO2
IODIR
R5
220KΩ
1 nF
C4
R3
R6
470 KΩ
LED
3.3V
12
11
IO1 Å IO2
10 µF
C5
IO2 Å IO1
10 µF
C6
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-5:
Typical Application: AC only.
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 13
RE46C800
NOTES:
DS20005172D-page 14
2013 - 2019 Microchip Technology Inc.
RE46C800
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
20-Lead SSOP (5.30 mm)
Example
RE46C800
V/SS e^^3
1308256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 15
RE46C800
/HDG3ODVWLF6KULQN6PDOO2XWOLQH 66 ±PP%RG\>6623@
1RWH
2&'!&"& 3
# *
!( !!& 3
% & &# &
&& 144*** ' '4 3
D
N
E
E1
NOTE 1
1 2
e
b
c
A2
A
φ
A1
L1
5&!
'!6'&!
7"')% !
L
66 ++
7
7
78
9
&
8 ;
&
<
:./0
<
## 3
3!!
:.
.
=.
& #%%
.
<
<
8 >#&
+
=
=
## 3
>#&
+
.
. ,
. :
8 6
&
:
.
2&6
&
6
..
.
.
2& &
6
. +2
6 #3!!
<
2&
?
?
.
=?
6 #>#&
)
<
,=
1RWHV
!" #$% &"' ()"&'"!&) &#*&& &#
'!! #+#&"#'#% ! &"!! #% ! &"!!! &$# '' !#
, '!
#&
+- .
/01 / !'! & $ & "!**&"&& !
+21 %'!("!" *&"&& (%%' & " !!
*
0
/
DS20005172D-page 16
2013 - 2019 Microchip Technology Inc.
RE46C800
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 17
RE46C800
NOTES:
DS20005172D-page 18
2013 - 2019 Microchip Technology Inc.
RE46C800
APPENDIX A:
REVISION HISTORY
Revision D (June 2019)
The following is the list of modifications:
• Updated the title of the document.
• Updated Section 3.7 “CO Sensor Circuit”.
Revision C (October 2017)
The following is the list of modifications:
• Updated Figure 4-2.
• Various typographical edits.
Revision B (July 2013)
The following is the list of modifications.
• Removed the lead free designation in part
ordering number in the Product Identification
System section.
Revision A (March 2013)
• Initial Release of this Document.
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 19
RE46C800
NOTES:
DS20005172D-page 20
2013 - 2019 Microchip Technology Inc.
RE46C800
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
X
Examples:
Package Number
of Pins
Device:
RE46C800
RE46C318T
Package:
SS20 = Plastic Shrink Small Outline - Narrow, 5.33 mm Body,
20-Lead (SSOP)
a)
b)
RE46C800SS20:
RE46C800SS20T:
20LD SSOP package
20LD SSOP package
Tape and Reel
CMOS Carbon Monoxide Detector IC
CMOS Carbon Monoxide Detector IC
(Tape and Reel)
2013 - 2019 Microchip Technology Inc.
DS20005172D-page 21
RE46C800
NOTES:
DS20005172D-page 22
2013 - 2019 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi,
Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer,
PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire,
Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST,
SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon,
TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA
are registered trademarks of Microchip Technology Incorporated in
the U.S.A. and other countries.
APT, ClockWorks, The Embedded Control Solutions Company,
EtherSynch, FlashTec, Hyper Speed Control, HyperLight Load,
IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision
Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire,
SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub,
TimePictra, TimeProvider, Vite, WinPath, and ZL are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BlueSky, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
Technology, and Symmcom are registered trademarks of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany
II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2013 - 2019, Microchip Technology Incorporated, All Rights
Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2013 - 2019 Microchip Technology Inc.
ISBN: 978-1-5224-4583-8
DS20005172D-page 23
Worldwide Sales and Service
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DS20005172D-page 24
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2013 - 2019 Microchip Technology Inc.
05/14/19
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