SG7915K-JAN

Analog Mixed Signal Reliability Report Revision E October 2016 PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Table of Contents 1.0 2.0 3.0 4.0 5.0 6.0 7.0 2 Reliability Program Overview Product Porfolio Accelerated Reliability Testing 3.1 FIT Rate Calculation and Assumptions Silicon Reliability Summary ------ 03 04 05 05 06 4.1 -- 07 ------ 09 10 10 15 23 ESD Summary Non Volatile Reliability Summary Package Reliablity Summary 6.1 Package Level 6.2 Product Level Revision Summary PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report 1.0 Reliability Program Overview Reliability is defined as product performance to specification over time in response to varied (specified) environmental stress conditions. The reliability function “R(t)” indicates the ratio of the conforming products that can function properly when the time “t” elapses after starting use. Microsemi - AMS publishes this report to provide customers with the intent to notify about the reliability of our product portfolio. Some of the important features of our program are,  Product qualifications are performed per internal procedures aligned to the industry standards mentioned above.  Product reliability is measured periodically to ensure that the product performance meets or exceeds requirements.  Reliability tests are executed in response to internal requirements.  Report is published annually. 1.1 Qualification Reliability tests used in the qualification of new devices (wafer process and package) are designed to ensure that Microsemi – AMS’s products satisfy applicable industry standards as part of new product introduction process. Products are required to be qualified based on applicable following standards before they are released to production,  Automotive products -- AECQ100  Commerical products -- JEDEC  Hi Reliability/Space products -- MIL PRF 38535 (Applicable test methods from MIL STD 883 for QML Q & V) 1.2 Ongoing Reliability Monitor (ORM) Program      3 The reliability monitor program is based on the maturity of the wafer process, existing data (tied to the number of device hours, FIT rate) and current run rate. Reliability data shown in this report is based on products/product families (based upon the same logic elements, embedded storage elements, interconnect technology, etc). Product families are qualified based upon the internal requirements and usually include products with a range of densities, package types, and package lead counts. The tests used as part of ORM test suite are determined per internal requirements. Units that are planned for ORM use are tested using production test equipment to data sheet limits before being stressed. Post test measurements are also done on the same production test equipment to data sheet limits. Any unit that does not meet the data sheet specification is considered a reject. PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report 2.0 Product Portfolio Microsemi AMS Group’s products are categorized primarily into the following product families, Product Family Sensors Product/Product Family AA 51X, AA 54X, AA 55X, AA 56X, AA 57X, AA58X, AA 61X, AA66X, AAP 1XX, AAP 2XX, AAP 6XX & AAP 8XX LX 19XX & LX 33XX P 31X AAC 2XX, AA 6XX & AA 7XX Backlighting LX 22XXX, LX 24XXX, LX 27XXX & LX 95XX LXE 19XX, LXM16XX, LXMG 19XX & 22XX SGE 13XXX, SGE 23XX, SGE 24XX & SGE 25XX AAHS2XX & AA7XX/AA7XX LX 45XX & LX 77XX Hi Rel SG 07XXX, SG 109X, SG 117XXX, SG 120 XXX, SG 137 XXX, SG 140 XXX, SG 143 XXX, SG150 XXX, SG15XX XXX, SG16XX XXX, SG 17XX XXX, SG 18XX XXX, SG 20XX XXX, SG 22XX XXX, SG 28XX XXX, SG 32XX, SG 35 XX, SG55XX XXX, SG 7XX XXX, SG 78XX XXX & SG 79XX XXX SGR 11X XXX & SGR 18XX XXX UC 18XXXX & UC 28XXXX AAX 2XX Power Management IPS 10XX, IPS 18XX & IPS 21X LX12 XXX, LX16 XX, LX 17XX, LX 18XX, LX 22XX, LX 24XX & LX 27XX, LX 71XX, LX 73XX, LX 82XX, LX 83XX, LX 85XX & LX 95XX LXE 16XX, LXE 17XX, LXE 18XX, LXE 9XXX, NX 2XXX, NX 4XXX, NX 7XXX & NX 9XXX SG 2XXX, SG 3XXX & SG 7XXX UC 28XXX & UC 38XXX 4 PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report 3.0 Accelerated Reliability Testing Microsemi AMS Group performs accelerated testing to assess reliability of its devices,  Overstresses are used to produce the same failure mechanisms that would be seen under normal conditions but in a much shorter period of time.  Acceleration factors (Temperature and Voltage) are used by Microsemi AMS to estimate failure rates based on the results of accelerated testing.  The objective of accelerated testing is to identify the failure mechanisms and eliminate them as a cause of failure during the useful life of our products. 3.1 FIT Rate Calculation and Assumptions Microsemi uses exponential distribution of failures in time and predicts constant failure rate at operating conditions,  Extrapolation uses thermal and voltage acceleration factors based on JEDEC formulas (JEP122).  FIT rate is calculated using JESD85 (Methods for Calculating Failure Rates in Units of FITs) standard.  All of the FIT (Failure in Time) rate and MTTF (Mean Time to Failure) numbers reported here use a base set of assumptions. o The failure rate is calculated using Chi-square distribution at 60% confidence interval from the small number of failures and limited sample size of the population tested. o The Chi-squared value is calculated from the inverse Chi-squared distribution using the desired probability level and degrees of freedom. o The failure rate is then calculated from the Chi-square value: 2 Failure Rate = 9 x 10 2 (A.F. * Device Hours) 2 where x = Chi-Squared value at 60% confidence level and (2f + 2) degrees of freedom, where f is the number of failures, Device Hours = (No. of Devices) * (No. of Hours)  The Acceleration Factor (A.F.) is calculated using Arrhenius relationship. Acceleration Factor = Exp {(Ea/k) × (1/Tuse – 1/Tstress)} Where: Ea = Activation Energy (eV), assumed 0.7 eV –5 k = Boltzmann’s constant (8.617 × 10 eV/ºK) Tstress = Temperature at accelerated conditions in degrees Kelvin (°K = 125°C + 273.16) Tuse = Temperature at normal use conditions in degrees Kelvin (°K = 55°C + 273.16) A.F. = Acceleration Factor 5 PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report 4.0 Silicon Reliability Summary Using the above mentioned methodology, summary of failure rates for various process nodes (with active products) are as shown below, Table 4.0.1: High Temperature Operational Life Test/Burn In (HTOL/BI) Foundry Process Total Units Failures Total Device Hours FIT Rate 0.18um (Global Foundries) 1128 0 3098869 3.7937 0.18um (Jazz) 154 0 438946 26.7828 0.35um (Dongbu) 750 0 2965434 3.9644 0.35um (Magnachip) 3526 0 2925027 4.0191 0.35um (XFAB) 1417 0 2073400 5.67 0.50um (Magnachip) 796 0 656364 17.9111 0.5um (Excel Power) 150 0 68935 170.5413 0.5um (Jazz) 450 0 379996 30.9377 0.6um (XFAB) 1952 0 1698937 6.9197 0.8um (XFAB) 879 0 593872 19.7958 1.0um (Excel Power) 200 0 164916 71.2862 1.0um (XFAB) 519 0 1193000 9.8543 1.4um (Microsemi GG) 200 0 150213 78.2638 2.0um (Microsemi GG) 50 0 30738 382.4603 3.0um (Microsemi GG) 349 0 88399 132.9911 6.0um (Microsemi GG) 400 0 408490 28.7797 Notes: 1. FIT rates are calculated based on 0.7ev, 60% confidence level & Tj = 55C 2. Total device hours are normalized to Tj = 125C Table 4.0.2: Early Life Failure Rate (ELFR) Product Foundry Process Node Conditions Units Failures Device Hours LX82XX Global Foundries 0.18um 125C @ 48hrs 2400 0 115200 LX82XX Global Foundries 0.18um 150C @ 48hrs 4800 0 230400 7200 0 345600 Total = 6 PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report Table 4.0.3: High Temperature Storage Life (HTSL) – Wafer level Product Package Condition Hours Wafers Failures Wafer Hours AAP8XX 8 pin SB 150C 1000 1 0 1000 AAP8XX 8 pin SB 150C 1000 1 0 1000 AAP1XX Bump Die 150C 1000 1 0 1000 3 0 3000 Total = Additional wafer level reliability data (like GOI, TDDB, EM, etc) is maintained by the foundry as applicable per their internal ongoing monitoring program. 4.1 ESD Summary Table 4.1.1: ESD Summary (Data from HBM, CDM & MM models as applicable) Process/Foundry Product HBM CDM MM 0.18um Global Foundries LX82XX 4000V 2000V 150V 0.18um Global Foundries LX82XX 2000V 2000V 0.18um Global Foundries LX24XX 8000V 2000V 0.18um Global Foundries LX24XX 1500V 2000V LX24XXAVIG 8000V 2000V 2000V 0.35um Dongbu LX65XX 5000V 700V 200V 0.35um Dongbu LX19XX 5000V 1500V 250V 0.35um Magnachip LX71XX 500V 0.35um Magnachip LX13XXX 1000V 0.35um Magnachip LX22XX 1000V 500V 150V 0.35um Magnachip LX23XXX 3000V 1500V 200V 0.35um Magnachip LX23XXX 4000V 2000V 350V 0.35um Magnachip LX24XXX 5000V 2000V 250V 0.35um Magnachip LX24XXX 6000V 2000V 250V 0.35um Magnachip LX65XX 3000V 2000V 300V 0.35um Magnachip LX71XX 600V 2000V 0.35um Magnachip LX71XX 1000V 750V 25V 0.35um Magnachip LX71XX 2000V 2000V 250V 0.35um Magnachip LX71XX 2500V 2000V 200V 0.35um Magnachip LX71XX 1500V 1500V 100V 0.35um Magnachip LX71XX 1500V 2000V 75V 0.35um Magnachip LX71XX 2000V 2000V 50V 0.35um Magnachip LX71XX 1500V 1500V 0.35um Magnachip LX73XX 1000V 2000V 0.18um Jazz 7 PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY 100V Reliability Report 0.35um Magnachip LX82XX 5000V 2000V 0.35um Magnachip LX27XXX 3000V 2000V 0.35um XFAB AA6XX 1000 0.35um XFAB AA5XX 1000V 0.35um XFAB LX23XXX 1500V 1500V 350V 0.50um Excel Power LX82XX 1500V 2000V 200 0.35um XFAB AAP8XX 150V (i/p to gnd; 2000V (FB1, FB2 & HPF to gnd) & 7500V (o/p to gnd) 0.35um XFAB LX33XX 2000V 0.50um Jazz LX13XXX 5500V 750V corner pins, 500V all other pins 1500 500V 0.50um Jazz LX73XX 1500V 1000V 100V 0.50um Jazz LX96XX 3500V 2000V 200V 0.50um Magnachip NX41XX 1000V 500V 0.60um XFAB LX27XX 1000V 0.60um XFAB NX95XX 500V 2000V 50V 0.60um XFAB LX65XX 3500V 1500V 250V 0.60um XFAB LX17XX 0.60um XFAB LX27XXX 5000V 2000V 200V 0.60um XFAB LX27XXX 4000V 2000V 150V 0.80um XFAB LX65XX 4000V 1500V 250V 1.0um Excel Power LX65XX 3500V 1500V 250V 6.0um Microsemi GG LX23XXX 4000V 6.0um Microsemi GG LX23XXX 4000V 6.0um Microsemi GG LX23XXX 4000V 8 150V 1000V PRINTED COPIES OF THIS DOCUMENT ARE UNCONTROLLED; FOR REFERENCE USE ONLY Reliability Report 5.0 Non-Volatile Memory Reliability Summary Exiting data on non-volatile memory is listed below, Table 5.1: Program/Erase Endurance Cycling – High temperature Product Process Node Package Temperature # of Cycles Units Failures Device Hours 100 231 0 23100 0.35um 16QSOP 14-pin TSSOP (RoHS) 85C LX33XX 125C 100 154 0 15400 385 0 38500 Total = Table 5.2: Program/Erase Endurance Cycling – Low temperature Product Process Node Package Temperature # of Cycles Units Failures Device Hours LX33XX 0.35 um 14-pin TSSOP (RoHS)